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Project 6199 2.pptx

wide bandgap semiconductor

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TCAD ANALYSIS FOR
SUPER-JUNCTION
DEVICES
INTRODUCTION
• A semiconductor junction consisting of multi-layered
thin pn-junctions, so-called SUPER-JUNCTION, has
been developed to overcome the limitation of the
conventional pn-junction. In this junction, positive
charges of donor in n-type semiconductor layers and
negative charges of acceptor in p-type semiconductors
layers appear, after a reverse voltage is applied to the
junction. The average charge density of them is
controlled to be very low as a whole. As a result, the
breakdown voltage is increased.
• In this project, our objective is to observe the different
structure of super-junction and simulate the structure to
enhance its performance. Here, we have simulated the
silicon based super-junction structure and observed the
resulting critical electric field.
WHAT IS SUPER-JUNCTION?
• Super-junction devices are designed to
break the “silicon limit”. The difference
between conventional device structure and
super-junction device structure is the drift
region design.
• It’s easily noted from fig.(a) that
conventional drift region composes of one
type epi-layer, either n or p, while the super-
junction drift region is made up of two types
oppositely doped, alternatively stacked epi-
layer. Fig.(b) shows an interdigitated p-n
column structure, which is most commonly
used. Other structure are also possible.
Experimental ideas from previous research:
We made the structure of Horizontal Super-junction Structure as per the super-
junction theory presented by Hidetoshi Ishida in his paper named “GaN-based
Natural Super-junction diodes with multichannel Structures”.
EXPERIMENT
• We keep the dimension of the whole structure as 2 x 1 µm2.
• For vertical Super-junction we took every n and p layer equal to each other and took the dimension as 1
x 0.4 µm2.
• For horizontal Super-junction we again kept the dimensions of both n and p-layer equal to each other
and took the dimension as 2 x 0.4 µm2.
• After making the base structure we finally add a thin ohmic contact both named as cathode and anode,
from there we are going to supply our reverse bias voltage.
• Now, it’s time for adding doping profile to the structure. For that we choose 1x1016 cm-3 of phosphorus
dopant for n-layer and 1x1016 cm-3 of boron dopant for p-type layer. For ohmic contacts we keep the
1x1018 cm-3 phosphorus doping concentration for cathode region and 1x1018 cm-3 boron doping
concentration for anode region, making the cathode region highly doped n-type region and anode a
highly doped p-type region.
• After adding constant profile concentration, it’s time to make the meshing for the simulation and
calculation part.
Horizontal Si Super-Junction Structure
(with doping concentration)
Vertical Si Super-Junction Structure
(with doping concentration)
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Project 6199 2.pptx

  • 2. INTRODUCTION • A semiconductor junction consisting of multi-layered thin pn-junctions, so-called SUPER-JUNCTION, has been developed to overcome the limitation of the conventional pn-junction. In this junction, positive charges of donor in n-type semiconductor layers and negative charges of acceptor in p-type semiconductors layers appear, after a reverse voltage is applied to the junction. The average charge density of them is controlled to be very low as a whole. As a result, the breakdown voltage is increased. • In this project, our objective is to observe the different structure of super-junction and simulate the structure to enhance its performance. Here, we have simulated the silicon based super-junction structure and observed the resulting critical electric field.
  • 3. WHAT IS SUPER-JUNCTION? • Super-junction devices are designed to break the “silicon limit”. The difference between conventional device structure and super-junction device structure is the drift region design. • It’s easily noted from fig.(a) that conventional drift region composes of one type epi-layer, either n or p, while the super- junction drift region is made up of two types oppositely doped, alternatively stacked epi- layer. Fig.(b) shows an interdigitated p-n column structure, which is most commonly used. Other structure are also possible.
  • 4. Experimental ideas from previous research: We made the structure of Horizontal Super-junction Structure as per the super- junction theory presented by Hidetoshi Ishida in his paper named “GaN-based Natural Super-junction diodes with multichannel Structures”.
  • 5. EXPERIMENT • We keep the dimension of the whole structure as 2 x 1 µm2. • For vertical Super-junction we took every n and p layer equal to each other and took the dimension as 1 x 0.4 µm2. • For horizontal Super-junction we again kept the dimensions of both n and p-layer equal to each other and took the dimension as 2 x 0.4 µm2. • After making the base structure we finally add a thin ohmic contact both named as cathode and anode, from there we are going to supply our reverse bias voltage. • Now, it’s time for adding doping profile to the structure. For that we choose 1x1016 cm-3 of phosphorus dopant for n-layer and 1x1016 cm-3 of boron dopant for p-type layer. For ohmic contacts we keep the 1x1018 cm-3 phosphorus doping concentration for cathode region and 1x1018 cm-3 boron doping concentration for anode region, making the cathode region highly doped n-type region and anode a highly doped p-type region. • After adding constant profile concentration, it’s time to make the meshing for the simulation and calculation part.
  • 6. Horizontal Si Super-Junction Structure (with doping concentration) Vertical Si Super-Junction Structure (with doping concentration)
  • 7. Electric Field Profile: The Electric field pattern along with the graph plot is shown below. The Critical EF found here is 0.45MV/cm. (a) Electric-field pattern (b) scale (c) Electric-field plot OBSERVATION (For Vertical Super-Junction Model)
  • 8. OBSERVATION (For Horizontal Super-Junction Model) Electric Field Profile: The Electric field pattern along with the graph plot is shown below. The Critical EF found here is 0.24MV/cm. (a) Electric-field pattern (b) scale (c) Electric-field plot
  • 9. OBSERVATION (For conventional Si PiN junction Model) Electric Field Profile: The Electric field pattern along with the graph plot is shown below. The Critical EF found here is 0.4 MV/cm. (a) Electric-field pattern (b) Scale n+ n drift region p+ (c) Electric-field plot