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New Memory Solutions for Enterprise Computing


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Micron driving memory solutions for enterprise computing

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New Memory Solutions for Enterprise Computing

  1. 1. ©2012 Micron Technology, Inc. All rights reserved. Products are warranted only to meet Micron’s production data sheet specifications. Information, products, and/or specificationsare subject to change without notice. All information is provided on an “AS IS” basis without warranties of any kind. Dates are estimates only. Drawings are not to scale. Micron andthe Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners.1©2012 Micron Technology, Inc. |June 15, 2013New Memory Solutions forEnterprise ComputingJune 2013
  2. 2. 2©2012 Micron Technology, Inc. |05,00010,00015,00020,00025,0002012 2013 2014 2015 201603,0006,0009,0002012 2013 2014 2015 201605,00010,00015,00020,00025,00030,0002012 2013 2014 2015 2016WW DRAM Growth ForecastSource: Finance Strategy Supply/Demand Model D1PC TAMCAGR: 14%1GbEq(M)1GbEq(M)Server & Storage TAMGraphics and Consumer TAM1GbEq(M)CAGR: 26%June 15, 20132013 WW DRAM TAMPC = DT, NB, Ultrathin, Tablet, Netbook, and Upgrade ModulesNetworking TAM1GbEq(M)Total TAM CAGR ‘12-’1629%CAGR: 47%1GbEq(M)05,00010,00015,00020,0002012 2013 2014 2015 2016CAGR: 48%05001,0001,5002,0002012 2013 2014 2015 2016CAGR: 29%Mobile TAMServer &Storage15%Networking2%PC49%Graphics &Consumer11%Mobile21%Other2%
  3. 3. 3©2012 Micron Technology, Inc. |05,00010,00015,00020,00025,000CQ113 CQ213 CQ313 CQ413 CQ114 CQ214 CQ314 CQ414 CQ115 CQ215 CQ315 CQ415 CQ116 CQ216 CQ316 CQ416June 15, 2013Server & Storage DRAM Module DensityModules(000s)64GBSource: Micron Business Development – 2Q’1318661600 2133DDR3 speeds DDR4 speeds8GB2GB, 4GB16GB32GB2400
  4. 4. 4©2012 Micron Technology, Inc. |Driving Solutions for Enterprise ComputingJune 15, 2013Key ImplicationsMicron offers Memory Architectures for Enterprise ComputingMarket TrendsNVDIMMPersistent MemoryApplicationsMission CriticalMicro-Server DIMMsSORDIMM, ECC SODIMM, Mini-VLP UDIMMOEMDDR4Next GenerationMainstream DRAM• Demand side fragmentation : Enterprisesegment continues to rapidly sub-segment intocommoditized cloud space and traditional OEM space• Supply side consolidation : Scalable vendor basecontinues to reduce in size for key customersopening up collaborative landscape for technologydevelopers• Disruptive growth : Focus on BI & Analyticsdriving SDDC/SDN architecture targeting hardwarecommoditization• Cloud segment : Public Cloud drives scale-outbusiness and enables microserver growth over time• Non-Cloud segment : Traditional enterpriseapplications drive scale-up business, in-memorycomputing technologies and platform differentiation• Divergent Requirements : Notable differences inmemory requirements for performance, capacity, andspeed developing across cloud and non-cloudsegments
  5. 5. 5©2012 Micron Technology, Inc. |Small Form Factor DIMMs for Micro-ServersSmall Footprint, High CapacityJune 15, 2013ECC SODIMM/ SORDIMM/VLP RDIMMMicro-Server DRAM Market Outlook• ECC SODIMM:o 4/8GB densityo SDP components, JEDEC standard definition• SORDIMM:o 16GB densityo DDP components, JEDEC standard definition• VLP RDIMM:o 4/8/16GB density, SDP and DDP components0%10%20%30%40%50%02505007501000CQ112CQ212CQ312CQ412CQ113CQ213CQ313CQ413CQ114CQ214CQ314CQ414CQ115CQ215CQ315CQ415CQ116CQ216CQ316CQ416M Gb EQ for uServer uServer % of Server DRAMCurrent Trends• Gaining Traction in data center buildouts• Marked growth of customers planning orintroducing micro-server products• Low density modules solidifying around ECCSODIMM and high density around SORDIMM andVLP RDIMM• DDR3 transition to DDR4 expected when costpremium is near zero
  6. 6. 6©2012 Micron Technology, Inc. |June 15, 2013Why DDR4?Packing power and performance into a new generation of DRAM Up to 50% bandwidth increase over DDR3 Data rates reaching 2400 Mb/s today and will go up to 3200 Mb/s in future Faster burst accessesSpeed Voltage reduction to 1.2V  20% reduction in power compared with DDR3 DLL-off mode for system frequency scaling TCR for optimizing refresh power consumption with no impact to controller scheduling LPASR mode adjusts self-refresh rate based on device temperature for maximum standby powerPower JTAG boundary scan enables early fault detection during system test  reduced debug time and saveddevelopment & production costs Improved data signal integrity and system reliabilityQuality Support up to 16Gb die density Multi-rank package support Higher capacity memory subsystem  Up to 8-die stackingDensity
  7. 7. 7©2012 Micron Technology, Inc. |Non-Volatile DIMMCombination DRAM and NAND for backup and persistent data applicationsJune 15, 2013Overview Operation & Value PropositionUltracapacitor ModuleSelf-contained energy source foroperation during power failure • Provides data retention in the event of apower fail or system crash and a meansto implement basic checkpoint schemes• Looks like an RDIMM to the systemduring normal operation• Transfers data from DRAM to NANDupon power failure or system crash• Valuable wherever the bottleneck isstorage and I/O and where downtimecosts moneyNVDIMM ControllerFlash management andhigh speed DMAOnboard DRAM & NANDDRAM performance and non-volatility