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GE
Critical Power
Power Design - Head to Head
Integrated Silicon vs. GE Point of Load (POL)
In the match-up between two le...
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Power Design - Head to Head: Integrated Silicon vs. GE Point of Load (POL)

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In the match-up between two leading power design options, one clear winner emerges…

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Power Design - Head to Head: Integrated Silicon vs. GE Point of Load (POL)

  1. 1. GE Critical Power Power Design - Head to Head Integrated Silicon vs. GE Point of Load (POL) In the match-up between two leading power design options, one clear winner emerges… RELIES ON IN-HOUSE EXPERTISE POWER MODULE WIZARD ONLINE DESIGN TOOL AND FAE TECHNICAL SUPPORT Integrated Silicon: GE POL: Ease of Design Motherboard Real Estate Reliability Scalability Performance Capacitance & Transient Response Design Approach Cost EMI, Ripple & Noise Feature www.gecriticalpower.com VERTICALLY DENSE. HEIGHT REDUCED AT EXPENSE OF FOOTPRINT HORIZONTALLY DENSE. TIGHTER FOOTPRINTS UTILIZING AVAILABLE HEIGHT HIGH IPC9592 ADHERENCE SINGLE SOURCED INDUSTRY, DOSA & PMBusTM STANDARD FOOTPRINT BETTER THERMAL PERFORMANCE & ELECTRICAL CONVERSION EFFICIENCY STANDARD EXPENSIVE WIDER SPECTRUM, POOR FILTERING LIMITED / POOR DIGITAL & ANALOG RICH TIGHT & ADJUSTABLE FREQUENCY HIGH VALUE RESTRICTEDBY DEFAULT CONTROL LOOP SETTING LIMITEDTO THEIR OWN COMPONENT LIBRARY OPTIMALUSING TUNABLE LOOP LEVERAGE BEST COMPONENTS AVAILABLE FOR THE DESIGN HIGHIPC COMPLIANCE UNKNOWN

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