TI’s Next Great Leap: Introducing the NexFET™ 100V Power MOSFETs!

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TI’s Next Great Leap: Introducing the NexFET™ 100V Power MOSFETs!

  1. 1. TI’s Next Great Leap: Introducing the NexFET™ 100V Power MOSFETs!
  2. 2.  This webinar will be available afterwards at www.designworldonline.com & email  Q&A at the end of the presentation  Hashtag for this webinar: #DWwebinar Before We Start
  3. 3. Moderator Presenter Miles Budimir Design World Rich Nowakowski Texas Instruments
  4. 4. TI’s Next Great Leap: Introducing the NexFET™ 100V Power MOSFETs! April 2014 Rich Nowakowski Texas Instruments
  5. 5. Agenda • NexFET Technology and Advantages • Mid Voltage NexFETs for Power Supplies • Synchronous-Buck Design Example • Flyback Design Example • Forward Converter with Active Clamp Design Example • NexFET for Motor Control • Stepper Motors • Brush & Brushless DC Motors • Tools and Resources
  6. 6. TI expands NexFET™ portfolio with mid-voltage MOSFETs • Excellent thermal performance • Supports high-current motor control and power conversion applications • Lowest on-resistance 80V & 100V MOSFETs in TO-220  CSD19506 at 2.0 milliohm Rds(on) at 80V  CSD19536 at 2.3 milliohm Rds(on) at 100V  WEBENCH® design tool support  Evaluation modules: DC brushless motor control, digital power, POL New MOSFETs in TO-220 & SON packages support 40V, 60V, 80V and 100V!
  7. 7. MV NexFET Gate Switching Speed TI Best Cdv/dt Immunity & ~ Twice Switching Speed -2.0 -1.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0 250 500 750 1,000 1,250 1,500 1,750 2,000 2,250 2,500 GateVoltage(V) Time (ns) Gate Switching Waveform CSD18531Q5A BSC031N06Competition
  8. 8. MV NEXFETTM Robustness / Avalanche Capability 0 20 40 60 80 100 120 140 UISCurrent(A),0.1mH Devices Tested Avalanche Capability CSD18501Q5A 25ºC CSD18502Q5B 25ºC BSC016N04 25ºC 125ºC25ºC Leadership Ruggedness and Avalanche Capability 20% Higher Capability vs Leading Competitor Devices tested to failure Competition
  9. 9. NexFET SON 5x6mm Devices NexFET Dual SO-8 Devices Part Number Package BVDSS (V) VGS (V) RDS(ON) Typ (10V) (mΩ) RDS(ON) Max (10V) (mΩ) ID @ 25ºC (silicon) Qg(10) Typ (nC) Qgd Typ (nC) Qgs Typ (nC) Qrr - 300A/µs Typ (nC) Coss Typ (pF) Alpha Samples RTM CSD18509Q5B SON5x6 40 20 1.0 1.25 264 160 21.0 34.0 40 1100 30-Jan 14Q2 CSD18502Q5B SON5x6 40 20 1.8 2.3 204 52 8.4 10.3 88 900 Now Now CSD18501Q5A SON5x6 40 20 2.5 3.2 155 42 5.9 8.1 70 725 Now Now CSD18503Q5A SON5x6 40 20 3.4 4.3 145 27 4.3 4.5 52 510 Now Now CSD18504Q5A SON5x6 40 20 5.3 6.6 75 16 2.4 3.2 39 310 Now Now CSD18540Q5B SON5x6 60 20 1.6 2.0 188 58 11.0 12.8 120 498 15-Feb 14Q2 CSD18532Q5B SON5x6 60 20 2.5 3.2 169 44 6.9 10.0 111 470 Now Now CSD18532NQ5B SON5x6 60 20 2.7 3.4 165 49 7.9 16.0 139 495 Now Now CSD18531Q5A SON5x6 60 20 3.5 4.6 134 36 5.9 6.9 100 380 Now Now CSD18533Q5A SON5x6 60 20 4.7 5.9 103 29 5.4 6.6 68 292 Now Now CSD18563Q5A SON5x6 60 20 6.0 7.5 98 29 5.4 6.6 57 292 Now Now CSD18534Q5A SON5x6 60 20 7.8 9.8 69 17 3.5 3.2 54 167 Now Now CSD18537NQ5A SON5x6 60 20 11 14 55 14 2.3 4.7 54 136 Now Now CSD19502Q5B SON5x6 80 20 3.4 4.1 138 48 8.6 14 275 925 Now Now CSD19532Q5B SON5x6 100 20 4.0 4.9 130 48 8.7 13 249 706 Now Now CSD19531Q5A SON5x6 100 20 5.3 6.4 110 37 7.0 11 226 540 Now Now CSD19533Q5A SON5x6 100 20 7.8 9.4 75 27 4.9 7.9 163 395 Now Now CSD19534Q5A SON5x6 100 20 12.4 15.5 53 15 2.7 4.5 97 228 Now 10-Feb Part Number Package BVDSS (V) VGS (V) RDS(ON) Typ (10V) (mΩ) RDS(ON) Max (10V) (mΩ) ID @ 25ºC (silicon) Qg(10) Typ (nC) Qgd Typ (nC) Qgs Typ (nC) Qrr - 300A/µs Typ (nC) Coss Typ (pF) Alpha Samples RTM CSD88537ND Dual SO-8 60 20 13 16 13 14 2.3 4.7 40 136 Now 5-Feb CSD88539ND Dual SO-8 60 20 22 28 9.7 9 2.1 3.2 20 77 Now 5-Feb
  10. 10. TO-220 Devices 10 Part Number Package BVDSS (V) VGS (V) RDS(ON) Typ (10V) (mΩ) RDS(ON) Max (10V) (mΩ) ID @ 25ºC (silicon) Qg(10) Typ (nC) Qgd Typ (nC) Qgs Typ (nC) Qrr - 300A/µs Typ (nC) Coss Typ (pF) Alpha Samples RTM CSD18502KCS TO-220 40 20 2.4 2.9 200 52 8.4 10.3 105 900 Now Now CSD18503KCS TO-220 40 20 3.6 4.5 130 30 4.6 7.7 60 480 Now Now CSD18504KCS TO-220 40 20 5.5 7.0 85 19 3.5 4.4 46 320 Now Now CSD18532KCS TO-220 60 20 3.3 4.2 169 44 6.9 10.0 127 470 Now Now CSD18533KCS TO-220 60 20 5.0 6.3 114 28 3.9 9.4 97 300 Now Now CSD18534KCS TO-220 60 20 7.6 9.5 71 19 3.1 4.8 68 164 Now Now CSD18537NKCS TO-220 60 20 11 14 54 14 2.3 5.2 77 136 Now Now CSD19506KCS TO-220 80 20 2.0 2.5 250 125 23 37 800 1700 Now Now CSD19505KCS TO-220 80 20 2.7 3.3 193 77 14 23 495 1050 Now 23-Jan CSD19501KCS TO-220 80 20 5.6 7.0 113 36 6.6 11 233 497 Now 30-Jan CSD19503KCS TO-220 80 20 7.6 9.2 94 28 5.4 9.8 161 555 Now Now CSD19536KCS TO-220 100 20 2.2 2.8 238 125 23 37 800 1890 Now 27-Jan CSD19535KCS TO-220 100 20 3.1 3.9 180 77 14 23 495 1170 Now 30-Jan CSD19531KCS TO-220 100 20 6.3 7.9 102 37 7.0 12 270 560 Now Now CSD19533KCS TO-220 100 20 8.7 10.5 86 27 5.4 9.0 151 395 Now Now
  11. 11. AC-DC Rectification PFC Load Sw ORing DCAC HV MOSFETS 500-800V MV MOSFETS 40-100V LV MOSFETS 25-30V SMPS TOPOLOGIES • Non- Isolated Synchronous Buck • Off-line Flyback <100W • Forward with Active Clamp <250W • Two-Transistor Forward TTF <500W • Half Bridge with Synchronous Rectification <500W • Resonant LLC/ Series Resonant SRC <500W • Full-Bridge Phase-Shifted ZVS <1000W Power Supply Architecture
  12. 12. MV NexFETs for Synchronous Rectification FOM for Synchronous Rectification • FOM = RDS(on) * (Qrr+1/2 Qoss) - Qrr measured at transformer secondary side di/dt - Qoss measured at transformer voltage on secondary side MV MOSFETS Selection Criteria • FET BV depends on Vout and Transformer Turns Ratio N ( N=Np/Ns) • FET RDS(on) selection depends on SMPS topology, Iout and Pout
  13. 13. Non-Isolated Synchronous-Buck Example • VIN – 24V, 36V • VOUT – 5V • IOUT – 5A • LOUT – 10µH (14mΩ DCR) • Frequency – 100kHz • Controller – TPS40170 • EVM Used o TPS40170-578 EVM • High Side FET o CSD18537NQ5A • Low Side FET o CSD18563Q5A • Ringing Reduction o RBoot_Strap = 5.6Ω o CSnubber = 820pF o RSnubber = 3 Ω 13 CSD18537NQ5A CSD18537NQ5A
  14. 14. 10A CSD18537NQ5A/CSD18563Q5A 60V, Industrial NexFET™ for Synchronous Buck Controllers • Up to 10A low side buck converters • >92% Peak Efficiency with 36VIN/5VOUT • >93% Peak Efficiency with 24VIN/5VOUT • Space saving SON5x6mm package • Low thermal resistance • Ultra Low Qg and Qgd • Low-side improved softness factor • Small size and good thermal performance • Excellent light-load efficiency • Minimized switch node ringing • 63% de-rating with 36VIN
  15. 15. 10A / 36Vin Switch-Node Waveforms 36VIN , 5VOUT, 100kHz, 10A, No Ringing Reductions Peak Ring – 46.4V Peak Ring – 38.2V 36VIN , 5VOUT, 100kHz, 10A, w/ Ringing Reductions Implementing Snubber and Bootstrap Resistor achieves 63% De-Rating
  16. 16. TI’s Most Popular Wide-Vin Buck Controllers Visit www.ti.com/widevin for more information...
  17. 17. Recommended NexFETs for Buck Controllers DC Solution HS FET LS FET Comments 60V Low-Current CSD19534Q5A CSD19534Q5A ● VIN 10 to 60V ● IOUT up to 5A ● Up to 600kHz 60V High-Current CSD19534Q5A CSD19533Q5A ● VIN 10 to 60V ● IOUT up to 10A ● Up to 600kHz 40V Low-Current CSD18537NQ5A CSD18537NQ5A ● VIN 10 to 40V ● IOUT up to 5A ● Up to 600kHz 40V High-Current CSD18537NQ5A CSD18563Q5A ● VIN 10 to 40V ● IOUT up to 10A ● Up to 600kHz For higher currents, parallel the high-current high-side and low-side MOSFETs
  18. 18. Q2 Q1 Sync Rectifier Q2 Primary Side FET CrCM/ QR Flyback for AC-DC Applications Choosing the FET Q1 • Low Rds(on) from 2-10mΩ • Low Rds(on) affects Diode Emulation • Use 60V FET for 5Vout • Use 100V FET for 19.5Vout • <40W, QFN package • <125W, 1 to 2 FETs in a TO-220 Operating on Critical Conduction Mode .
  19. 19. MOSFET VDS On-Resistance Primary FET Q2 650V – 800V ≤ 1Ω for 20W ≤ 300mΩ for 95W Synchronous Rectifier FET Q1 60V for 5Vout 100V for ≤ 20Vout 2 - 10mΩ 60V CSD18531Q5A 60V CSD18533Q5A 100V CSD19531Q5A 100V CSD19531KCS 100V CSD19532Q5B 100V CSD19535KCS AC Adaptors: Universal Input 85 - 265Vac , F = 50/60Hz Fsw = 50 - 150kHz Vout = 1.5V - 19.5V, Pout ≤ 150w Suggested Mid-Voltage NEXFETs - Flyback
  20. 20. PMP8817 - Dual 2A/5V Off-Line Design • UCC28700 Primary-Side Regulated Flyback • CSD18533Q5A NexFET • UCC24610 Synchronous Rectifier Controller • TPS2561A / TPS2513 USB Interface • 1.5” x 1.8” x 0.9” Volume UCC24610 http://www.ti.com/tool/pmp8817
  21. 21. PMP8817 Efficiency Plot
  22. 22. Forward Converter with Active Clamp Example Q3 Q4 Q1 Forward FET Q2 Freewheeling FET Q3 Active Clamp FET Q4 Primary FET Choosing the FETs Q1 & Q2 • Forward FET Q1 optimized for fast switching, low Qg & low turn-off loss • Freewheeling FET Q2 optimized for low conduction loss and best SRs FOM (RDS(on) * Qrr) • The number of paralleled FETs depends on the power level and the efficiency target. Features • Gate drivers not needed for Q1 & Q2. Easy to control • Higher efficiency operation as reset energy is conserved, not dissipated! • Zero-Voltage Switching achievable • Transformer smaller than regular Forward as it utilizes more of the flux of transformer core
  23. 23. Suggested NexFETs - Forward Converter with Active Clamp Solution Primary FET Q4 Active Clamp FET Q3 Forward FET Q2 Freewheeling FET Q3 DC-DC 36 – 75Vin 150V 150V 60V CSD18531Q5A 100V CSD19531Q5A 100V CSD19533Q5A 40V CSD18502Q5B 40V CSD18509Q5B 60V CSD18532Q5B 60V CSD18540Q5B AC-DC Offline 85 – 265Vac 800V 650V 80V CSD19501KCS 100V CSD19531Q5A 100V CSD19531KCS 60V CSD18532Q5B 60V CSD18540Q5B 60V CSD18532KCS Off-line AC-DC Isolated • VIN = 85 – 265VAC, VOUT = 5 – 12V, POUT ≤250W DC - DC Isolated Converter - Telecom, POE and Computing • VIN = 36 – 75V, VOUT ≤ 12V, IOUT = 0 – 25A, FSW = 250kHz
  24. 24. PMP7499 12V/5A Active Clamp Forward TI Devices • UCC2897A Active Clamp PWM Controller • CSD18533Q5A NexFET • TPS2379 PD Controller http://www.ti.com/tool/pmp7499
  25. 25. PMP7499 Efficiency Plot
  26. 26. Resonant LLC DC-DC Converter Resonant LLC • Variable frequency converter • Eliminates switching losses in primary FETs • No output inductor Choosing the FETs S1 & S2 • Controls voltage stress on output synchronous rectifiers. Use lower rated FETs S1 & S2 • Turned on at Zero Current Switching – reduces gate drive losses • Driven by secondary-side controller
  27. 27. Resonant LLC DC/DC Converter MOSFET MOSFET BV RDS(ON) Recommended FET Primary FET Q1/Q2 500-650V 100-300 mΩ N/A Sync Rectifier FET S1/S2 40V for VOUT = 12V 60V for VOUT = 15V 1 – 3mΩ 40V CSD18502Q5B 40V CSD18509Q5B 60V CSD18532Q5B 60V CSD18540Q5B Vin = 350-400VDC, Vout = 12V, Iout = 0-50A, Fsw = 100 – 500kHz
  28. 28. PMP5967: 400VDC 12V @ 460W Design TI Devices • UCC25600 Resonant LLC PWM Controller • CSD18501Q5A NexFET • UCC24610 Secondary Side Controller www.ti.com/tool/pmp5967
  29. 29. PMP5967 Efficiency Plot
  30. 30. Motor Control Solutions
  31. 31. • Current ratings and SOA are the selection criteria, not MOSFET On- resistance • Ruggedness and UIS (Unclamped Inductive Switching) avalanche capability are important • Survive rotor-stalled condition for extended intervals of time MOSFET Selection for Motor Control
  32. 32. CSD88537ND & CSD88539ND 60-20V, Dual N-channel NexFET™ Power MOSFETs • Brushless DC Motor Control  3 Phase Topology  Up to 9A stall current • Stepper Motor Control  Full Bridge Topology (2 Phase) • Space Saving Dual SO-8 Package • 3V Standard Threshold • Low Thermal Resistance • Ultra Low Qg and Qgd • 50% Footprint Reduction over Discrete SON5x6 or SO-8  ~4A per FET for CSD88539ND  ~8A per FET for CSD88537ND • Cost competitive solution
  33. 33. NexFETs for Stepper Motor Control • TI Motor Controller DRV8711EVM Uses CSD18531Q5A • Textile Machines • ATM Machines • Vending Machines • Industrial Automation CSD18537NQ5A  60V BVDSS  SON5x6  11 mΩ Rds(on)  50A Capability CSD88537ND  60V BVDSS  Dual in SO-8 ~12.5 mΩ Rds(on)  8A Capability CSD88539ND  60V BVDSS  Dual in SO-8 23 mΩ Rds(on)  4A Capability
  34. 34. NexFETs for DC Stepper Motor Operation Recommendation for Dual Full-Bridge DC Stepper Motor Pre-Driver Imotor NexFET ™ # FETs BVDSS Package DRV8711 ≤3A CSD88539ND 4x 60V Dual SO-8 DRV8711 ≤6A CSD88537ND 4x 60V Dual SO-8 DRV8711 ≤15A CSD18531Q5A 8x 60V SON5x6
  35. 35. Power Tool Internal Circuit NexFETs for Brush DC Motor Drive: Choppers • Li-Ion batteries: 3.6V / 7.2V ... 22V • Trigger speed ≥ 70%, FSW= 4 – 10kHz MOSFET performance required in Power Tools: Survive extended Stalled-Rotor condition • Ton = 1s/ Toff = 10S ►Ipeak = 165A VBATT MOSFET BV Silicon IDM Recommended FET ≤12V 30V 80-150A 30V CSD17556Q5B 18V 40-60V 100-180A 40V CSD18502KCS 60V CSD18532KCS 24V 60-80V 100-240A 60V CSD18532KCS 80V CSD19506KCS 42 – 48V 100V ≤100A 100V CSD19536KCS
  36. 36. NexFETs for 3-Phase BLDC Motor Control • DRV8301 • DRV8302 • DRV3201-Q1 • DRV3202-Q1 • DRV3211-Q1 CSD18502Q5B  40V BVDSS  SON5x6 Package  1.8 mΩ RDS(on)  100A Capability CSD18502KCS  40V BVDSS  TO-220 Package  2.4 mΩ RDS(on)  100A Capability CSD18508Q5B  40V BVDSS  SON5x6 Package  1.3 mΩ RDS(on)  100A Capability
  37. 37. Key Mid Voltage Evaluation Modules • Stepper motor pre-driver: DRV8711EVM evaluation module is based on the DRV8711 stepper motor controller paired with a NexFET device to drive a bipolar stepper motor or two brushed DC motors. • Motor Drive BoosterPack: The BOOSTXL-DRV8301 kit is a 10-A, 3-phase brushless DC drive stage based on the DRV8301 pre-driver -- designed for those learning about sensor-less brushless control techniques and drive stage design. • Digital power: UCD3138PSFBEVM-027 allows power developers to design a digitally controlled, phase-shifted off-line, 12-V, 360-W power converter application. • Point-of-load control: TPS40170EVM-597 evaluation board features TI’s TPS40170 synchronous step-down controllers with two NexFET devices.
  38. 38. Thank You! • TI Now Offers up to 100V NexFET™ Power MOSFETs for Switching Applications and Motor Control • Opening up new range of 40-100V FETs thru 1Q and 2Q2014 • Visit our NexFET™ landing page: www.ti/com/nexfet
  39. 39. Questions? Miles Budimir Design World mbudimir@wtwhmedia.com Phone: 440.234.4531 Twitter: @DW_Motion Rich Nowakowski Texas Instruments r-nowakowski1@ti.com Phone: 214-480-1667
  40. 40. Thank You  This webinar will be available at designworldonline.com & email  Tweet with hashtag #DWwebinar  Connect with Design World  Discuss this on EngineeringExchange.com

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