Din itex 10_09_2012


Published on

DINItex develops and plans to produce revolutionary tunable multi-layer non-linear dielectric chips and modules based on them for the wide range of RF applications including smart phones, mobile computers, automotive active safety systems.

Published in: Technology
  • Be the first to comment

  • Be the first to like this

No Downloads
Total views
On SlideShare
From Embeds
Number of Embeds
Embeds 0
No embeds

No notes for slide

Din itex 10_09_2012

  1. 1. Multilayer nonlinear dielectric devices for RF mobile communications … improvement of performance of smartphones and mobile computers (save power and extend operating time and reduce harmful effect on human body) … cost saving design for automotive radars and communication systems … broad spectrum of tunable RF devices to exchange the traditional non-tunable ones DINItex, Ladshut-Saint-Petersburg, June 2012
  2. 2. Industry pain and our proposition
  3. 3. Industry pain Cell phone and mobile computers:Taking the phone in hand, we create Modern cell phone is a very multifunctionalinterference to signal transmission device, it is considered to support several frequency bands, providing Bluetooth, Wi-Fi, Antenna is LTE communications. All of those systems mismatched require bandpass filters or filter banks. It is with amplifier. Battery Amplifier faster clear, that the reduction of area occupied by increases signal discharged filters provides more free space for new power function. filtersAntennas actually used in smart mobile devices like cellphones do not have automatic tuning of its impedance.Thus, impedance of antenna is being affected by humanbody parts like, for instance, hands. Impedance variationsleads to mismatch between antenna and amplifier. Moderncell phones compensates this effect by providing ahigher power to the amplifier output signal resulting to areduction of stand alone time up two times. Anti-collision radars and communication systems: up to now commercial solutions on the market are based only on mechanical scanning of antenna beam or on an array of non-scan antennas, which are very cost-intensive and not robust solutions.13.11.12 CONFIDENTIAL 3
  4. 4. Solutions: integrated products based on multilayer nonlinear dielectric varactor chips Core technology for different RF Electronically applications scanned antenna Adaptive matching modules for circuits for mobile automotive radars phones, mobile and communication computers and tablets systems multilayer nonlinear dielectric- metal structure (MND)Advantages of the products: Tunable bulkü save power acoustic waveü extend operating time (BAW) filters forü cost saving system design mobile devicesü reduce harmful effect on human body13.11.12 CONFIDENTIAL 4
  5. 5. Comparison of technological approaches for varactor chipsCurrent varactor technologies fall into three major categories: Only Nonlinear dielectric- based Ø  semiconductor-based varactor diodes Ø  Micro-electromechanical system (MEMS) varactors elements provide the best Ø  nonlinear dielectric-based varactors performance and low cost. Semiconductor Micro- electromechanical Nonlinear dielectric-basedParameters varactors (MEMS) elementsPower Handling ~0.01 W ~0.1 W ~1 WTuning Speed ~1 ns ~ 1 mks ~1 nsBias Voltage ~5V ~50V ~5VQuality Factor ~100 ~250 ~100Tunability ~4 ~10 ~3Life time 5 years < 1 year 5 years Advantages: Main drawback: The high power handling low power handling Main drawbacks: capability in combination with capability (high level of high bias voltage and high the relatively low bias voltage intermodulation packaging cost provide the best performance distortions) and low cost.13.11.12 CONFIDENTIAL 5
  6. 6. State of the art nonlinear dielectric technology and main unsolved problems Ø  For mobile applications it is very important to have a high power Planar structure handling capability (more than 30dBm) with low control voltage (3V) simultaneously. Ø  At present time there are two different approaches to design of nonlinear dielectric film devices - planar structure and parallel-plate structure based on only one layer of nonlinear dielectric. High control voltages and high power handling capability Ø  Planar structure provides high power handling capability (30dBm) but needs for that high control voltages (more than 400V). It requires step Parallel-plate structure up voltage converters that is not acceptable for mobile devices. Ø  From the other hand, parallel-plate structure is controlled by low voltages (5-30V) but has low power handling capability (5-10dBm) which is not enough for the operation of RF amplifier in mobile device. Low control voltages and low Ø  The devices based on one dielectric layer are being developed by power handling capability Agile RF (USA) and nGimat (USA). Ø  Only multilayer structures allow to combine both important features in Two-layers parallel-plate structure one device: to reduce control voltages and to achieve high power handling capability. Ø  At present time only one company (Paratek) produces devices based on two layers of nonlinear dielectric. These devices provide power Low control voltages and high power handling capability 30dBm (that is acceptable) and the control voltage handling capability about 20V and that is still high and still takes the DC-DC converters.06.04.2012 CONFIDENTIAL 6
  7. 7. The technology validationØ  Paratek is developing the most likely technology. It discovered a different approach to RF tuning using a thin-film material called ParaScan™ (nonlinear dielectric). Proprietary to Paratek, ParaScan is used to produce the ParaTune™ family of tunable integrated circuits (ICs).Ø  An advantage of Paratek’s products is low-loss tuning over a wide range of impedances, ultra-fast response time, and industry-standard packaging which allows new generation of wireless products to perform better and more efficiently.Ø  The significant contribution to the development of Paratek’s technology was made by a group of Professor Kozyrev, who is one of the founders of DINItex. His group is the author of 15 patents that partly covers IP property in this field and were sold to Paratek in 2002-2008. During this period of time prof. Kosyrev’s group provided the material researches and prototyping of Results of Joint research Kozyrev’s Lab microwave devices for Paratek. and Paratek:Ø  In March of 2012 Paratek Microwave Inc. was acquired by one ü 2001 R&D 100 Award of 100 best main producers of smartphones – RIM (owner of trade mark technical-science works of USA BlackBerry that takes only 10% of smartphones market). That means that since that time Paratek is developing RF tuning for RIM only. ü 15 US PatentsØ  DINItex is the company which researches are open for the rest ü Over 40 publications in scientific journals of the market that still contains 90%. and conferences proceedingsØ  DINItex’s researchers independently developed additional advantages in technology and designed a range of new devices. ü 8 grants of US Department of Energy06.04.2012 CONFIDENTIAL 7
  8. 8. Knowhow and new approach
  9. 9. Knowhow on the structure levelØ The reduction of control voltages is possible only due to reduction of Me/BSTO/…../Substrate film thickness. But it leads to drop in power handling capability. For two layer structure with 3V control voltages the power handling capability is only 20dBm that is not enough for mobile applications.Ø To keep 30dBm power handling capability it is possible to increase the number of layers with parallel reduction of their thicknesses.Ø The required number of nonlinear dielectric layers is 8-12.Ø The required thickness of each layer shell be less than 100nm.Ø The reduction of nonlinear dielectric film thickness is constrained by low-tuning layer on the metal-dielectric interface due to mismatch of crystal lattice constants. This problem becomes the most dominant with increase of layers number.Ø Up to now this problem for bottom electrode materials with low losses Substrate at microwaves (with high conductivity, like Pt or Au) is not solved. Our knowhow in thin film deposition technique provides the solution for described problemØ  The principal: changing stoichiometry of dielectric at the initial growth stage allows to reduce the mismatch of crystal lattice constant.Ø  The effective changing of stoichiometry by pressure is possible only in unique designed technological vacuum chamber (that is completely unique and patented by founders).Ø  For modeling of spattering and deposition processes the unique math model and computer simulation tool are elaborated and licensed by founders.13.11.12 CONFIDENTIAL 9
  10. 10. Knowhow on chip design level Ø  At the chip level the other main problem exists: excitation of acoustic waves leads to dramatical increase of microwave losses (reduction of Q-factor). Ø  The two layer structure allows the cancellation of transverse acoustic modes (founders are the co-authors of patent application, owned to Paratek). However, the excitation of longitudinal acoustic waves is still a problem at present time. Ø  Besides, the high level of operation microwave power takes an effective heat sink. Our knowhow on chip level design ~ 1 mm C, pF provides the solution for The image cannot be displayed. Your computer may not have enough memory to open the image, or the image may have been corrupted. Restart your computer, and then open the file again. If the red x still appears, you may have to delete the image and then insert it again. Capacitance mentioned problems: variation under DC in microwave signal Special shape of top electrodes RF in RF out ~ 1 mm provides both cancellation of Capacitance longitudinal acoustic wave variation under DC control generation and more efficient heat voltage dissipation [PCT application is preparing] U, V13.11.12 CONFIDENTIAL 10
  11. 11. Knowhow on tunable BAW filter design Ø At present time BAW filters based on traditional RF piezoelectric materials (AlN, ZnO) are in active development and use. BAW filters can operate up to around 10GHz and provide the combination of high quality RF parameters (insertion loss, reliability, sizes). Piezoelectric Ø BAW filters made of the above materials can be electronically tuned to a specified frequency by using a varactor diode or by utilizing the second-order nonlinearity of the piezomaterial. Ø However the frequency tuning in such a structures is not more than 3%. Our knowhow of tunable BAW filter design provides the solution of mentioned problem EdcØ Proposed BAW filter consists of several layers of nonlinear dielectric. The Edc sign of piezoelectric coefficient of each layer depends on direction of control E-field. EdcØ The principal: biasing of each nonlinear dielectric layer with EDC of the same or opposite direction results in the excitation of the antisymmetrical Edc or symmetrical acoustic modes respectively.Ø Frequency tuning up to 100% is possible. The principal of acoustic mode switching is completely unique and patented by founders.Ø For modeling of acoustic wave excitation the unique math model and computer simulation tool are elaborated and licensed by founders.13.11.12 CONFIDENTIAL 11
  12. 12. New complex approach into technology of distributed nonlinear dielectric structures for phased array antennas Ø  More than 20 years of experience in design of Absence of phased array antennas for frequency ranges up to 60 residual GHz. polarization due to oxygen Ø  2001 R&D 100 Award for technology of Electronically annealing and Scanning Antenna, which have been included in the special regimes list of 100 best technical-science works of USA in of electrodes 2001 year. deposition Distributed Improvement of High structural quality nonlinear dielectric tanδ due to of nonlinear dielectric cancellation of films due to the structures for transversal and unique math model automotive radar longitudinal and software of (77GHz) and acoustic wave spattering and communication generation [PCT deposition processes (10GHz) phased application is [PCT application is array antennas preparing] preparing] Theoretical and experimental Licensed technique investigations of and test-fixtures for pure strontium RF characterization titanate films with of nonlinear relatively low loss dielectric structures in W-band13.11.12 CONFIDENTIAL 12
  13. 13. IP list 7 released patents; 4 patent applications Chip design and Design Chip technology Product design testing simulation1. Russian patent 3. Russian Patent N2397607, 7. Russian Patent 10. Patent application to beN2434078. 20.11.2011 17.07.2009 N2361360, 12.05.2008 applied (PCT)“Method of complex oxide “Ferroelectric acoustic “Tunable pulse former made “SW simulation Kit forferroelectric thin film resonator and its resonance on non-linear ferroelectric simulation of processdeposition based ion- frequency tuning technique” transmission lines” parameters at ion etchingplasma sputtering and ion plasma sputtering”technique” 4. Russian Patent N2367964, 8. Russian Patent 04.04.2008 N2355080, 24.05.2007 “Coaxial resonator for “Microwave active module” 11. Russian Patent2. Patent application tobe applied (PCT) Capacitor Quality factor N2012610179 measurements” 9. Russian Patent “SW design kit for resonance “Method of increasing the N2350008, 04.05.2007tunability of ultrathin electro-acoustical 5. Patent application to be “Method of thermal to phenomena modelling inferroelectric films” electrical energy conversion applied (PCT) multilayer structures” “Tunable bulk acoustic wave and a device for it” filter based on nonlinear dielectric films” 6. Patent application to be applied (PCT) “Tunable capacitor based on multilayer nonlinear dielectric”13.11.12 CONFIDENTIAL 13
  14. 14. Patent application plan 1st year 2nd year 1. PCT application 6. PCT application “Control loop design for the RF tunable matching “Tunable RF filter based on integrated LTCC and circuit” multilayer nonlinear dielectric technology” 2. PCT application 7. PCT application “Phased array antenna for the automotive radar” “Tunable RF coupler based on integrated LTCC and multilayer nonlinear dielectric technology” 3. PCT application “BAW duplexer based on the multilayer nonlinear 8. PCT application dielectric structure” “Tunable RF generator based on integrated LTCC and multilayer nonlinear dielectric technology” 4. PCT application “BAW impedance tuner” 9. PCT application “Tunable power divider based on integrated LTCC 5. PCT application and multilayer nonlinear dielectric technology” “Method of LTCC and multilayer nonlinear dielectric technology integration” 10. PCT application “Power amplifier tuner based on integrated LTCC and multilayer nonlinear dielectric technology”13.11.12 CONFIDENTIAL 14
  15. 15. Products
  16. 16. Broad spectrum of products based on multilayer nonlinear dielectric varactor chips Core product Multilayer nonlinear dielectric-metal structure (MND) Integrated products Electronically scanned Adaptive matching circuits Tunable bulk acoustic wave antenna modules for for mobile phones, mobile (BAW) filters for mobile automotive radars computers and tablets devicesand communication systems New class of voltage tunable RF components §  Tunable filters §  Tunable power dividers §  Tunable couplers §  Phase shifters §  Tunable generators §  Power amplifier tuners13.11.12 CONFIDENTIAL 16
  17. 17. Market call for adaptive matching circuit (product 1)Ø  The output power and radiation efficiency of a mobile phone with a compact narrow-band antenna can be greatly degraded by large mismatches resulting from the users hand position.Ø  Since multi-mode, multiband phones with densely packed radios and future MIMO antennas will only make next generation designs even more problematic, antennas need to be less sensitive to their environment.Ø  Adaptive antenna tuners dynamically change antenna impedance using a feedback controller so it is always tuned for maximum efficiency. In these modules, a detector measures the transmitted RF signal and an algorithm derives the mismatch information from the phase of the matched input impedance and calculates any necessary changes for the adaptive matching circuit.Ø  Disruption is all well and good when a company is creating a new smartphone category, but Apple had a problem on its hands when its iPhones antenna reception experienced disruption in the hands of its customers. “Divine Innovation: 10 Technologies Changing the Future of Passive and Control Components” Nov, 201113.11.12 CONFIDENTIAL 17
  18. 18. LG request for development of adaptive matching circuit (market call confirmation)13.11.12 CONFIDENTIAL 18
  19. 19. Adaptive matching circuit. Operational principle Adaptive Matching Circuit Unknown load Matched Impedance transformer (antenna) Impedance sensorFrom Amplifier Controller Mismatch Output Ø  Tuning elements are basic building blocks for Input adaptive impedance matching circuits Ø  Electronically controllable varactors are most practical and convenient tuning elements for providing tunability in RF/microwave circuits U control Varactor Impedance transformer13.11.12 CONFIDENTIAL 19
  20. 20. Adaptive matching circuit design for entrance to the market 3-D schematic of adaptive matching module Chip  selfcos,  Euro  cents   6,6           BOM     2,8   Proposed varactor chips (based on multilayer nonlinear processing  materials:  coa0ng  lack,  developing  chemicals,  stripping  and   dielectric structure) cleaning  materials   1,3   substrate  sapphire,  4  inches   1,3   dielectric  targets  (Ba,Sr)TiO3   0,01   Pt  target  (contact  layer)   0,04   Gold  for  upper  contact   0,1   Oxigen  for  deposi0on  process   0,01   Argon  for  deposi0on  process   0,03           Labor  cost   3,1   Equipment  deprecia@on  cost   0,7   Module  for  MC  selfcost,  Euro  cents   111           BOM   94,4   chips  (4  pcs)   26,4   diode  MW   8,0   coil  for  MW   4,0   microcontroller   50,0   Multilayer substrate with integrated passive capacitors  for  uC     2,0   elements resistors   4,0           Labor  cost   16   Equipment  deprecia@on  cost   1,1  13.11.12 CONFIDENTIAL 20
  21. 21. Electronically scanned antenna modules (product 2) Two different type of products based on the same technology Automotive radar (24GHz/77GHz), used for emergency brake assist, collision warning, adaptive cruise control, blind spot detectionSatellite broadcasting systems (10.95 - 13.5 GHz)13.11.12 CONFIDENTIAL 21
  22. 22. Anti-collision radars Existing radars We suggest radar of the future - electronically scan and multi beam LETI prototype77 GHz and 24 GHz SensorsApplications:§  Adaptive Cruise Control§  Emergency Brake Assist Main advantages: §  High speed and wide angle of scan §  Reliability due to the lack of mechanical moving partsAt present time there are only the non-scan or the §  Combining short range and long range radars in one Camera Sensors package – reduce size and number of units in themechanical scanning systems on the commercialmarket which are very cost-intensive and not system §  Integrated technology of aperture and control circuitrobust solution. §  Low cost13.11.12 CONFIDENTIAL 22
  23. 23. Scanned antenna for communication systems State of the art - mechanically scanned LETI prototype of Ka-band phased array antennas antenna Consist of 16 coplanar waveguide ND phase shifters 30GHz thin film ND phase shifter13.11.12 CONFIDENTIAL 23
  24. 24. Tunable BAW filters in mobile devices (product 3) Traditional mobile phone Proposed mobile Voltage controlled switching and front-end phone front-end tuning of frequency band (Novel Four filters feature, no analogues) Tunable BAW filter Antenna Antenna Switch Switch Module Module 4 in 1 - cost saving system design BAW filters application Wi-Fi, BT Advantages of BAW technology: GPS Wi-Fi ü High power handling capability ü High quality factor GSM, ü Miniaturization WCDMA 1 2 3 4 5 6 Freq. GHz13.11.12 CONFIDENTIAL 24
  25. 25. BAW - operational principle Well-known tunable capacitive structures on the base of nonlinear dielectric E = EDC + EMW Induced piezoelecticМе behavior is a negative ND phenomena for MW tunable devices Substrate Suppression of piezoresonances due to use of two- layer ND film structure [J. Oakes, A. Kozyrev, A. Prudan et al. Patent Application US2008/0232023]13.11.12 CONFIDENTIAL 25
  26. 26. Knowhow in tunable acoustic devices based on multilayer nonlinear dielectric structure Two-layers structure Me Me ND Edc UMW Me ND Edc [A. Kozyrev, A. Prudan et al. Patent RU №2397607] switching   Application to each layer of EDC of the same or opposite direction results in the excitation of the antisymmetrical or symmetrical modes respectively.13.11.12 CONFIDENTIAL 26
  27. 27. Validation (present time results)
  28. 28. Phase Array AntennasØ  The principal product based on one layer structure designed and manufactured by our team is Phase Array Antennas.Ø  Based on our phase array antennas new product like radars with electronically scanning on frequencies up to 80 GHz can be designed. The use of phase array antennas will completely eliminate the use of expensive mechanical systems in the production of automotive radarØ  It can be also used in communication systems for transferring signals in wide range of frequencies on long distance, for example transferring video and audio signals. It can be used also for transferring signal on moving objects.13.11.12 CONFIDENTIAL 28
  29. 29. Transferring video signal on the distance 50 km13.11.12 CONFIDENTIAL 29
  30. 30. The progress of our team in Phase Array Antenna design Ø  More than 20 years of experience in design of phased array antennas for frequency ranges up to 80 GHz. Ø  2001 R&D 100 Award for technology of Electronically Scanning Antenna, which have been included in the list of 100 best technical-science works of USA in 2001 year. Ø  A set of prototypes and engineering samples is developed13.11.12 CONFIDENTIAL 30
  31. 31. Structure and device parameters.The key knowhow in device manufacturing is knowhow on the level of chip and structure growth. It is so due tothe fact that set of structure parameters fully determine the end device parameters. And the quality of thedevice is fully determined by quality of film deposition process and chip topology. Below in the table acorrelation between device and structural parameters is presented Structure parameters Device parameters Stoichiometry (variation of film composition during the growth process). In the case of fixed film stoichiometry the tunability drops under temperature variations in Ø  Tunability operating temperature range. In order to get rid of this effect it is necessary to change the stoichiometry of the film as it grows. From the other hand the Ø  Quality factor stoichiometry variation allows dramatically reduce the number of defects on the (losses) interface electrode/nonlinear dielectric due to reduction of the mismatch of crystal lattice constant that in turn results in quality improvement. Ø  Tuning Speed Stoichiometry variation of film composition during the growth process is one of our main knowhow. Number of nonlinear dielectric layers. Only multilayer structures allow to combine Power handling both important features in one device: to reduce control voltages and to achieve capability high power handling capability. The thickness of a layer. The reducing of layers thickness provides the reducing Bias Voltage of control voltages Chip topology. The unique chip topology leads to losses reduction and increasing Quality factor (losses) of quality factor (Q). The unique chip topology is our main knowhow also. 13.11.12 CONFIDENTIAL 31
  32. 32. Validation of temperature stability Stoichiometry of the structure largely determines the dependence of capacitance on temperature. Dependence of capacitance on temperature is a negative effect because it reduces tunability. At present time we have obtained two layers structure with gradient stoichiometry that demonstrates high temperature stability of capacitance and due to that higher tunability. Temperature dependence of capacitance 0,5 Experimental two layers structure obtained by One layer our team 0,4 Two layer 0,3 The effective changing of stoichiometry by pressure isC, pF E=0 V/mkm possible only in unique designed technological vacuum 0,2 chamber (that is completely unique and patented by founders). 0,1 E=40 V/mkm For modeling of spattering and deposition processes the unique math model and computer simulation tool 0 are elaborated and licensed by founders. 240 260 280 300 320 340 360 380 400 T, K 13.11.12 CONFIDENTIAL 32
  33. 33. Validation of power handling capabilityFor correct device operation it is necessary that device capacitance varies under bias voltage only and doesn’tdepend on microwave power.To experimental validation of device linearity, semiconductor and ferroelectric capacitive elements have beenplaced in resonance chamber. The peak on the curve of frequency dependence of transmission coefficient(S21) depends on capacitance value. If the capacitance value doesn’t depend on microwave power the peak onthe curve remain sharp (curve 1). If the capacitance value changes under microwave power the resonancepeak shifts to the higher frequency area (curve 2).At present time we can demonstrate very good power handling capability value(independence of capacitance on microwave power) for one layer structure (curve 1).Resonance curves for different ferroelectric (one layer) elements S21, dB -15 The next step of the project – to obtain the 1 -20 multilayer structure that posses good 2 -25 power handling capability value that is a -30 result of multiplexing of obtained result for -35 one-layer structure. -40 -45 2,4 2,5 2,6 2,7 2,8 2,9 3,0 3,1 f, GHz13.11.12 CONFIDENTIAL 33
  34. 34. Validation of tuning speedTuning speed is one of the main parameters that define the behavior of the device such as response sensitivity.The tuning speed depends on quality of the interface electrode/nonlinear dielectric. The less number of defectsthe more fast response. The number of defects in turns could be dramatically reduce by stoichiometryvariation. The quality of interface electrode/nonlinear dielectric can be validated by tuning speed.At the present time we obtain laboratory prototype of phase shifter that demonstrate perfect phase response(tuning speed) that is less than 5 nanosec. Control pulse and phase response of the ferroelectric phase shifter 5 ns 0.5 mks µ control pulse phase response13.11.12 CONFIDENTIAL 34
  35. 35. Validation of tunability and quality factorTunability and quality factor are the main parameters that define the behavior of the device such dynamicaloperating range and insertion losses. The higher tunability the wider operating range. The less bias voltage thebetter and bias voltage in its turn depends on dielectric film thickness. The thinner film the less bias voltage.At the present time we obtain laboratory prototype of one layer capacitive elements that demonstrate perfectquality factor and good tunability. The next step of the project – to obtain the multilayer structure that possesthe same tunabilty but at the lower bias voltage and the same quality factor values that are a result ofmultiplexing of obtained results for one-layer structure. The dependence of capacitance on bias voltage The dependence of quality factor on bias voltage 1,2 150 Quality 1 factor at 125 0,8 1,5 GHz One layer (experimental)C/C(0) 0,6 100 One layer 0,4 (experimental) Multilayer 75 0,2 (expected) 0 50 -15 -10 -5 0 5 10 15 0 5 10 15 20 U, V U, V13.11.12 CONFIDENTIAL 35
  36. 36. Test fixture for tunability, quality factor and power handling capability validationOur team have created measuring devices, which allowmeasuring main parameters of nonlinear structures withpreviously unattainable precision. The test devices arepatented. The measurement technique is licensed.This accuracy allows to distinguish the subtle changing ofmultilayer structure parameters that is necessary for growthcontrol. The measurement accuracy of quality factor isdemonstrated on the figure below. Comparison of measurement accuracyQ f = 3 GHz Measurement Accuracy of Agilent E4991A Analyzer at 3 GHz Measurement Accuracy of Q-test fixture proposed at 3 GHz U, V13.11.12 CONFIDENTIAL 36
  37. 37. Test fixture for switching time characterization Our team have created device for switching time characterization. The IP rights on this device are The test fixture features: protected. Ø  measurements of switching time from This device was implemented in two companies – minutes down to 1ns under pulses with Gennum and Paratek. amplitude up to 5kV is available; Ø  small error of measurements of dynamical (pulse) C-V characteristics. Registration of C-variation with 0.1% scale; Ø  measurements of switching time of ferroelectric bulk and film capacitors; Ø  measurements of dynamical (pulse) CV characteristicsPlace of thevaractor Ø  observation of hysteresis loops from dcinstallation under up to 500MHz frequenciespressing Ø  measurements of dynamical polarization MW process in ferroelectrics and linear ports dielectrics Pulse or DC ports 13.11.12 CONFIDENTIAL 37
  38. 38. Project goals and estimated results
  39. 39. Project resume Objectives: DINItex develops and plans to produce revolutionary tunable multi-layer non-linear dielectric chips and modules based on them for the wide range of RF applications including smart phones, mobile computers, automotive active safety systems Products: Ø  2013 - Antenna modules for mobile devices Ø  2014 - High effective and low-cost automotive anti-collision radars and communication systems Ø  2015 - Novel generation of tunable acoustic devices, which shall exchange actual filter banks in smart mobile applications by a single chip Ø  2015+ - New class of voltage tunable RF components •  Tunable filters •  Tunable couplers •  Tunable generators •  Tunable power dividers •  Phase shifters •  Power amplifier tuners Market: Ø  1 B of mobile phones yearly Ø  0,5 B mobile computers and tablets yearly, Ø  50 M of autos yearly Business strategy: Ø  To become a global supplier of building blocks for the worlds leading mobile phones, computers with a strong IP portfolio Ø  To enter the market by proving the unique position of the technology through intensive JDPs with the major players like Nokia, Apple, etc and major suppliers of automotive radar and antennas electronics Ø  To provide multiple return to Series A investor(s) by “trade sale” after the product is accepted by the market Ø  To provide multiple return to Series B investor(s) by setting up high volume manufacturing company with a significant and stream of revenue and wide customer range, production can be ramped up through partnership and OEM Exits opportunities: 2014+ : deal with Rusnano or other strategic investor 2014+ : trade sale to blue chips in Mobile phones, computer industries and leaders of automotive electronics 2016+ : IPO13.11.12 CONFIDENTIAL 39
  40. 40. Value chain Functional Chip SMD Module layers End device processing assembling packaging deposition Ø  Mobile phones and smartphones Surface Mounting of Antenna module Ø  Notebooks, Functional layers Multilayer structure assembling and chips and rest of netbooks, tablets growth processing packaging components Ø  Automotive anti-Vertical integration allows collision radars Ø  significantly reduce costs at every level of production and Ø  maximize the efficiency of production of the final product communication Ø  maximum control over product quality systems Ø  achieve rapid and cyclical introduction of innovative solutions, infrastructure optimization, harmonization of business processes, technologies and competences Ø  Multimedia Ø  most effectively develop and adapt consumer electronic modules devicesThe results: Ø  reducing costs and selling price Ø  Microwave and Ø  independence from suppliers of intermediate goods RF high power devices13.11.12 CONFIDENTIAL 40
  41. 41. Smartphones global market (adaptive matching circuit and BAW applications) Smartphone global market, M pcs. Ø  The worldwide smartphone market grew 42.6% year over year in the third quarter of 2011 (3Q11), despite a slowdown within 1 710 key mature markets. According to the International Data 1 439 Corporation (IDC) vendors shipped 118.1 million units in 3Q11 compared to 82.8 million units in the 3Q10. 1 189 Ø  The smartphones share at mobile phone market shall grow up 975 to 50% in 2017. 798 Ø  IDC expects smartphones sales rise to 975 million in 2015 654 Ø  IMS Research expects 800 million smartphone to sell or 35% of 503 the mobile handset market. They predict this figure will rise to over 1 billion in Ø  Morgan Stanley Research estimates sales of smartphones will exceed those of PCs in 2012 2013 2014 2015 2016 2017 2018 Top Five Mobile Phone Vendors Source: Gartner, Inc. Market shares Ø  Samsung became the new leader in the worldwide smartphone market Ø  Apple, after taking the number one spot last quarter from Samsung Nokia, slipped to the number two spot worldwide 20% Apple Ø  Nokia maintained its third place position on the strength of 30,60% its Symbian phones. Nokia Ø  HTC moved up one spot and maintained its upward 14,50% HTC momentum during 3Q11. RIM Ø  RIM (Research In Motion) began shipping its new BB OS 7 10% smartphones to the market during 3Q11, including updated 14,20% Others 10,80% versions of the BlackBerry Bold, BlackBerry Curve, and the BlackBerry Torch.Source: International Data Corporation (IDC) 13.11.12 CONFIDENTIAL 41
  42. 42. PC global market (adaptive matching circuit and BAW applications) PC market, M pcs Ø  The latest mobile PC forecast from DisplaySearch’s highlights the impact of changing regional dynamics and the impact on1 200 the notebook and tablet PC businesses. Tablet PC1 000 Notebooks Ø  Strong growth in shipments of notebook PCs into emerging 800 markets will result in these markets passing mature markets in 467 2011. 420 600 360 290 Ø  At the same time, shipments of tablet PCs into mature markets 400 226 170 continue to lead emerging markets and are expected to 125 498 200 90 450 throughout the forecast period. 270 300 350 190 220 250 0 Ø  As a result, mobile PC shipments (including notebook, mini- 2011 2012 2013 2014 2015 2016 2017 2018 note and tablet PCs) are expected to grow at double-digit rates Source: Quarterly Mobile PC Shipment and Forecast Report, NPD Display Search through 2017, at which time shipments will reach nearly 800 PC market shares million units, up from 277 million in 2011 and tablet PC will get about 45% of sales. Ø  The tablet PC category expanded its role in the mobile PC Apple market. The Y/Y shipment growth rate for tablets in 2011 21,10% HP reached 256%. 33,90% Dell Ø  The main assumptions behind the latest forecast are that as 15% Acer Group PC penetration rates rise in emerging markets, first time buyers are going to look to notebooks for the performance. At the Lenovo same time, the convenience of tablet PCs with their instant-on, 11,60% 10,90% other long battery life and portable form factors will be a welcome 7,50% platform for existing PC owners.Source: Quarterly Mobile PC Shipment and Forecast Report, NPD Display Search 13.11.12 CONFIDENTIAL 42
  43. 43. Automotive market (Electronically scanned antenna modules for automotive radars and communication systems)   Automotive market, M pcs. Ø  We are focusing on the vehicles equipped with active 114 safety features like short-, mid- and long range radars 105 96 88 Ø  Actually the only high-end automobiles are being equipped 81 with active safety features, but the tendency shows rapid 74 67 introduction of the features into low-end cars and is driven 60 by the car safety regulations in EU, US and Japan Ø  Thus analytics expect significant growth of the radar segment of automotive market. Ø  It is predicted that the size of that segment shall be about 50 million pcs in 2018 2011 2012 2013 2014 2015 2016 2017 2018 Source: Plunkett Research, Ltd. Automotive market shares General Autoradar market, M pcs. Motors 14% 49 40 Others 32 34% Toyota 25 12% 19 Ford 9% Honda 12 6% 7 Nissan Chrysler 7% 3% Volkswagen Daimler 2012 2013 2014 2015 2016 2017 2018 12% 3% Source: Plunkett Research, Ltd.Source: Plunkett Research, Ltd. 13.11.12 CONFIDENTIAL 43
  44. 44. Business targets and strategy Strategy: Ø  To become a global supplier of building blocks for the worlds leading mobile phones and computers with a strong IP portfolio; Ø  To enter the market by proving the unique position of the technology through intensive JDPs with the major players like Nokia, Apple, etc and major suppliers of automotive radar and antennas electronics; Ø  To provide multiple return to Series A investor(s) by “trade sale” after the product is accepted by the market; Ø  To provide multiple return to Series B investor(s) by setting up high volume manufacturing company with a significant and stream of revenue and wide customer range, production can be ramped up through partnership and OEM Stage I: Prototyping and technology Stage II: Mass production 2014-2018 (and further) commercialization 2012-2013 Ø  To conquer at least 10% market share of HF tunable Ø  To continue technology development device Ø  To protect IP by filing of 10-15 patent applications Ø  Become cash positive in 2015 Ø  To create prototypes of three main products Ø  To reach 500M yearly turnover Ø  To sign a contract with one of the leading manufacture Ø  To provide 45% gross margin of mobile phones or mobile computers. Ø  To provide 30% EBITDA Ø  To provide IRR 50% 2012-2013 2014 2015 2018 Financing – VCF + Grants Financing – Strategic Investor + Grants Investments needed – 5M Euro Investments needed – 74 M Euro The company value in 2013 is 40M Euro The company value in 2018 is 1,5B Euro13.11.12 CONFIDENTIAL 44
  45. 45. Exit strategy options*  Various promising exit options even at early stage 2012 2012-2013 Funding 2013 Equipment set-up Proof of concept/ Market introduction Implement process IPO Alliances with leaders Trade sale Process fine tuning on the mobile and to blue chip in automotive devices market Mobile phones and computer Pilot line industries or automotive leader Volume Optional: Ramp-up Deal with RUSNANO or other Strategic Investor Volume Ramp-up Prototyping and technology commercialization Mass production13.11.12 CONFIDENTIAL 45
  46. 46. Project plan and mile stones 2012 2013 2014 2015 2016 2017 2018 I II III IV I II III IV I II III IV I II III IV I II III IV I II III IV I II III IV Ramp up of R&D activityEquipment is installed Ramp up is completed Technological Chips mass production in Landshut on rented Mass production at own parameters optimization facilities plant IP protection SOP at own plant Set up of supply chain Prototype of products Mass production at own Modules mass production in Russia facilities plant Customer presentatio n of products IPO Building up own factory for Agreement with potential customer all production steps about long term cooperation Prototyping and Mass production commercialization13.11.12 CONFIDENTIAL 46
  47. 47. Technology commercialization and Pilot line in Landshut 2012-2014 Machinery and equipment are provided on a leasing basis, thus saving costs and reducing entrepreneurial risk: Ø  customized physical laboratories & clean rooms Ø  reactors Ø  lithography equipment Ø  chip processing equipment Ø  analytical and test equipment Functional Chip Module layers processing design deposition Developing of Developing of chip Module design and epitaxial technology processing technology prototype assembling §  The whole value chain technology developing §  Integration with the main worldwide known manufactures of end products Ø  Mobile phones Ø  Mobile computers Ø  Automotive applications •  IP protection and holder of IP rights13.11.12 CONFIDENTIAL 47
  48. 48. Mass Production 2014-2016 Germany (Landshut) Germany + Russia (St. Petersburg) Functional SMD Module Chip layers assembling packaging processing depositionØ  The production line shall be located in the rented foundry Ø  Till the ramping up of own factory in 2017 the assembling at Landshut till 2016 lines shall be located in the rented facilities in Russia §  due to the lack of clean room facilities and infrastructure for them in Russia Ø  Final product shall be produced in Russia with the chips §  to optimize cost and supply chain of the chip supplied out of front-end facility in Landshut productionØ  Pilot line shall continue working rented facilities Ø  Head quarter of the Company shall be located in RussiaØ  Sales/purchasing office is partly located in Landshut to provide optimal interface to potential customers/ suppliers. Ø  R&D department is located in the head quarter.Ø  Total number of reactors is 11Ø  Total number of lithography lines is 4 Ø  R&D activities with focus on new product development based on the similar chip technology Since 2017 … Functional layers Module Chip processing SMD assembling deposition packaging By 2016 the own factory for whole production chain shall be completed in Russia Since 2017 all products are made in Russia13.11.12 CONFIDENTIAL 48
  49. 49. Team §  One of the world strongest team in microwave device development originates from St.-Petersburg Electrotechnical University, Russia, with the unique synergy of material science specialists and radio engineering experts combined since years in one research group. §  The team members own more than 30 issued patent and more than 200 publications in the field; §  Team core (10 people) is a perfect combination of young talents, experienced mid-age experts and gurus. Average age is about 35 years old; §  More than 50% of team staff have a PhD grade Prof. Dr. Andrey B. Kozyrev, Dr. Denis Bychkovsky co-founder, Electronic engineer (1968), Ph.D co-founder, graduated from Ioffer Institute of (1974), Full professor (1990) of the Russian Academy of Science, author of row Department of Electronics and the head of the scientific publications and patents in the field Microwave Laboratory. Last 25 years his of solid state physics, highly experienced in general research interests have been in field project management, proven successful of microwave electronics. He has more than records of several start-up’s 200 publications in scientific journals and more than 30 patents in Russia and abroad. Dr. Anatoly K. Mikhaylov, Vitaly N. Osadchy, Lead of direction Lead of direction “BAW”. “matching circuits & radars”. co-founder, Electronic engineer in 2005 and co-founder, Electronic engineer (1994). Main PhD in 2010. He has 18 publications and 7 focus: constructing and experimental testing Russian patents. He won the first prize for the of controlling devises and phased array best young scientist’s paper at the 6th antennas for microwave applications. He has International conference MMA-2010 (Warsaw, over 60 publications in scientific journals and Poland, 2010). Winner of «President’s of 8 patents. 2001 R&D 100 Award for Russia grant for young doctors of philosophy». technology of Electronically Scanning Antenna.13.11.12 CONFIDENTIAL 49
  50. 50. Background and current status of workØ  Ion-plasma deposition technology for thin film Me/ FE/Me structures with suitable MW parameters is elaborated;Ø  Main associated technological operations (buffer layer deposition, lithography, etching etc.) are elaborated;Ø  The set of new technological approaches is developed;Ø  Special MW test-fixtures to provide the control of MW elements during and after their producing are elaborated, certificated and are in practical use in Russia and abroad;Ø  The theoretical analysis of parameters of new devices on the base of multilayer structures is done;Ø  The set of prototypes of MW devices, which are the base to develop the generation of new class of devices is elaborated. The high qualification level of Lab’s stuff is confirmed by the following data: Ø  2001 R&D 100 Award for technology of Electronically Scanning Antenna, which have been included in the list of 100 best technical-science works of USA in 2001 year (together with colleagues from NREL (USA) and Paratek Microwave Inc. (USA)). Ø  In accordance with data of MEMS Investor Journal (May 2008) the laboratory “is one of the four laboratories taking leading position in the World in area of tunable microwave ferroelectric devices”. Ø  Eight USA governments (DOE) grants and more than 30 foreign contracts, among them National Renewable Energy Lab (USA), Gennum (Canada), Paratek Microwave Inc (USA) Ø  Microwave Year Prize at 27th European Microwave Conference (Jerusalem, 1997), first prize of MMA-2010 (Microwave Materials and Application) for the best work of young scientist (Warsaw, 2010).13.11.12 CONFIDENTIAL 50
  51. 51. Partners London Imperial College is consistently rated amongst the worlds best universities and it is a science-based institution with a reputation for excellence in teaching and research. It has a very strong basement for nonlinear dielectric research. Micronova is Finlands National Research Infrastructure for micro- and nanotechnology, jointly run by VTT Technical Research Centre of Finland and Aalto University. Micronovas expertise covers the entire micro-nano innovation chain, from basic device physics and materials research to the development of new fabrication techniques and device prototypes, and even small scale manufacturing. Forschungszentrum Jülich GmbH (Jülich Research Centre) is a member of the Helmholtz Association of German Research Centers and one of the largest research center in Europe. Research at Jülich is divided into four research areas: health, information, environment, and energy. The key competencies of physics and scientific computing provide the basis for world- class research in these areas Fraunhofer-Gesellschaft, the largest organization for applied research in Europe. More than 80 research units, including 60 Fraunhofer Institutes, at different locations in Germany. The majority of more than 20,000 staff are qualified scientists and engineers. €1.8 billion annual research budget totaling. Saint Petersburg Electrotechnical University "LETI" (ETU) is considered as one of the world largest education and research centers in Radio Engineering, Electrical Engineering, Electronics and Computer Science.13.11.12 CONFIDENTIAL 51
  52. 52. List of potential Referents Professor Yorks research involves applying new materials advances to RF and power electronics. His group is developing high-power/high-efficiency electronics using wide band-gap (GaN) semiconductor University of technology, building on extensive expertise at UCSB in this area. He is co-director of the ONR MURIProfessor California at rayork@ece.ucsb. Center MINE (Millimeter-wave Initiative for Nitride Electronics). He is also a pioneer in applying thin-Bob York Santa Barbara, film ferroelectric technology for use in frequency-agile RF/wireless systems. He was awarded an IEEE edu CA, USA MTT-S Outstanding Young Engineer Award in 2004, and received an Office of Naval Research Young Investigator Award in 1996. (Publications: 211; Citations: 2714; G-Index: 44; H-Index: 27) Head of Department of Materials He is a member of the Electrical Engineering RAE panel, sits on the Advisory Board of Cambridge Massachusetts Institute, the Advisory Board, Antenova Ltd, a member of the DTI Working Group forProfessor Imperial College the Quantum Metrology Programme at NPL and he is a consultant on technical programmes for the n.alford@imperiaNeil McN.Alford London Gatsby Charitable Foundation. He is a fellow of the Institute of Physics, the Institute of Materials, l.ac.uk Minerals and Mining and a fellow of the Institution of Engineering and Technology. He is an associate editor for the Journal of the American Ceramic Society. He has over 200 journal publications and is the author of 21 patents. (G-Index: 23; H-Index: 12) Microwave and Since 1998, he has been a Professor with Chalmers University of Technology. Since 1996, he has High Speed also worked part time with Ericsson Microwave Systems AB (currently Ericsson AB), Mölndal, Electronics Sweden. He has authored or coauthored over 300 papers and conference presentations. He holdsProfessor Research over 30 patents/patent applications. His research interests are physics, design, and experimental spartak.gevorgianSpartak Center, EricssonGevorgian AB; investigation of microwave devices and components based on ferroelectrics, silicon RF integrated @chalmers.se circuits (RFICs) and monolithic microwave integrated circuits (MMICs), microwave photonic devices Chalmers (optically controlled components), and modeling of passive coplanar components based on conformal University of mapping. (G-Index: 21; H-Index: 12) Technology Ecole Tagantsev is a theoretician of a broad domain of expertise from ferroelectricity and phonon physics to Polytechnique electrodynamics of superconductors. He is the author of key results on the theory of microwaveProfessor Fédérale de materials, dielectric polarization in crystalline materials, and relaxor ferroelectricity. He is also known alexander.tagantsAlexanderTagantsev Lausanne in the field ferroelectric thin films for elucidating works on the polarization switching and degradation in ev@epfl.ch (EPFL), these systems. He authored or co-authored more than 200 articles (cited some 6000 times) and a Switzerland comprehensive book on ferroic domains. (G-Index: 17; H-Index: 9)13.11.12 CONFIDENTIAL 52