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Two Dimensional Device Modeling and Analysis of Metal–Germanium–Metal Photodiode

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9th International Scientific Conference on Applied
Sciences and Engineering
6-7 June 2016
Nippon Hotel, İstanbul-Turkey

Published in: Education
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Two Dimensional Device Modeling and Analysis of Metal–Germanium–Metal Photodiode

  1. 1. Abstract of Applied Sciences and Engineering, 2016, Vol.9 DOI: 10.18488/journal.1001/2016.9/1001.9 9th International Scientific Conference on Applied Sciences and Engineering 6-7 June 2016 Nippon Hotel, İstanbul-Turkey Conference Website: www.scihost.org 17 Paper ID: 17/16/9 th ISCASE Two Dimensional Device Modeling and Analysis of Metal– Germanium–Metal Photodiode S. Benzeghda1 --- F. Hobar2 1,2 Microsystems and Instrumentation Laboratory, Department of Electronics, University Mentouri Constantine Route Ain El Bey, Algeria Abstract A two-dimensional self-consistent time-dependent simulation technique has been used to investigate electron-hole transport processes in the active region of metal- semiconductor-metal photodiode structurcs (MSM-PD) and to analyse their high-speed response [1, 2]. Ge and SiGe are promising materials for optoelectronic devices compatible with standard and well developed Si technology [3, 4]. The sensitive volumes are 270 nm thick Ge film, grown on Si. Interdigitated Cr metal top electrodes with 1.5–5 µm spacing and identical finger width form Schottky contacts on the Ge film [2]. Monte Carlo simulation is a useful means of simulating the behavior of small semiconductor devices. Unlike conventional (Drift Diffusion) simulation methods, the Monte Carlo method provides an essentially exact solution of the Boltzmann transport equation and is prone only to statistical errors [5]. Due to the shorter carrier drift length, these devices are even faster, with a pulse response of 9.4 ps FWHM at 1550 nm, but have a lower overall quantum efficiency of 0.9% [2]. Keywords: Metal-semiconductor-Metal, Germanium, Schottky, Monte carelo.

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