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Original N-Channel Mosfet AO4914 4914 SOP-8 New Alpha & Omega Semiconductors

Original N-Channel Mosfet AO4914 4914 SOP-8 New Alpha & Omega Semiconductors

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Original N-Channel Mosfet AO4914 4914 SOP-8 New Alpha & Omega Semiconductors

  1. 1. AO4914 30V Dual N-Channel MOSFET with Schottky Diode General Description Product Summary Q1(N-Channel) Q2(N-Channel) VDS= 30V 30V ID= 8A (VGS=10V) 8A (VGS=10V) RDS(ON) <20.5m RDS(ON) <20.5m (VGS=10V) RDS(ON) <28m RDS(ON) <28m (VGS=4.5V) ESD Protected ESD Protected 100% UIS Tested 100% UIS Tested 100% Rg Tested 100% Rg Tested SCHOTTKY VDS = 30V, IF = 3A, VF<0.5V@1A The AO4914 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further. SOIC-8 Top View Bottom View G2 S2 G1 S1/A D2 D2 D1/K D1/K Top View G2 D2 S2 G1 D1 S1 K A Symbol VDS VGS IDM IAS, IAR EAS, EAR TJ, TSTG Symbol VDS IFM TJ, TSTG °C A mJAvalanche energy L=0.1mH C -55 to 150 TA=70°C 18 Junction and Storage Temperature Range Power Dissipation B 2 1.3 PD TA=25°C 1.3 18 2 30 8 A ±20 V 6.5 40 19 W V±20 Absolute Maximum Ratings TA=25°C unless otherwise noted Max Q1 Drain-Source Voltage 30 Max Q2 Gate-Source Voltage UnitsParameter Pulsed Drain Current C Continuous Drain Current Avalanche Current C 8 ID TA=25°C TA=70°C 6.5 40 19 Parameter Units Reverse Voltage V Max Schottky 30 ATA=70°C Pulsed Diode Forward Current C 3 2.2 20 Continuous Forward Current TA=25°C IF W TA=70°C Junction and Storage Temperature Range -55 to 150 °C 2 1.28Power Dissipation B TA=25°C PD SOIC-8 Top View Bottom View Pin1 G2 S2 G1 S1/A D2 D2 D1/K D1/K Top View G2 D2 S2 G1 D1 S1 K A Rev 11: Mar. 2011 www.aosmd.com Page 1 of 9
  2. 2. AO4914 Symbol t ≤ 10s Steady-State Steady-State RθJL Symbol t ≤ 10s Steady-State Steady-State RθJL THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. °C/W Parameter Typ Max Units Maximum Junction-to-Ambient A RθJA 48 62.5 °C/W Maximum Junction-to-Ambient A D 74 90 40 74 90 RθJA Maximum Junction-to-Lead 32 40 °C/W 48 Thermal Characteristics - MOSFET Parameter Typ Max Units Maximum Junction-to-Ambient A 62.5 °C/W Thermal Characteristics - Schottky Maximum Junction-to-Lead °C/W °C/WMaximum Junction-to-Ambient A D 32 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. Rev 11: Mar. 2011 www.aosmd.com Page 2 of 9
  3. 3. AO4914 Symbol Min Typ Max Units BVDSS 30 V VR=30V 0.05 VR=30V, TJ=125°C 10 VR=30V, TJ=150°C 20 IGSS 10 µA VGS(th) Gate Threshold Voltage 1.2 1.8 2.4 V ID(ON) 40 A 17 20.5 TJ=125°C 23.5 29 20.5 28 mΩ gFS 30 S VSD 0.45 0.5 V IS 3 A Ciss 575 730 865 pF Coss 115 165 215 pF Crss 50 82 120 pF Rg 0.5 1.1 1.7 Ω Qg(10V) 12 15 18 nC Qg(4.5V) 6 7.5 9 nC Qgs 2.5 nC Qgd 3 nC tD(on) 5 nsTurn-On DelayTime SWITCHING PARAMETERS Gate resistance VGS=0V, VDS=0V, f=1MHz Output Capacitance VDS=0V,VGS=±16V VDS=VGS ID=250µA Input Capacitance Total Gate Charge VGS=10V, VDS=15V, ID=8A Gate Source Charge Gate Drain Charge Total Gate Charge Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions DYNAMIC PARAMETERS VGS=10V, VDS=5V VGS=10V, ID=8A mΩ VGS=4.5V, ID=4A RDS(ON) Static Drain-Source On-Resistance Maximum Body-Diode + Schottky Continuous Current Drain-Source Breakdown Voltage On state drain current IS=1A,VGS=0V VDS=5V, ID=8A mAIDSS Zero Gate Voltage Drain Current (Set by Schottky leakage) ID=250uA, VGS=0V VGS=0V, VDS=15V, f=1MHz Reverse Transfer Capacitance Gate-Body leakage current Forward Transconductance Diode Forward Voltage tD(on) 5 ns tr 3.5 ns tD(off) 19 ns tf 3.5 ns trr 8 ns Qrr 8 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs Turn-Off Fall Time Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω IF=8A, dI/dt=500A/µsBody Diode Reverse Recovery Time Turn-On DelayTime A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. Rev 11: Mar. 2011 www.aosmd.com Page 3 of 9
  4. 4. AO4914 Q1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 17 5 2 10 0 18 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 ID(A) VGS(Volts) Figure 2: Transfer Characteristics (Note E) 10 15 20 25 30 0 5 10 15 20 RDS(ON)(mΩΩΩΩ) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 NormalizedOn-Resistance Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) VGS=4.5V ID=4A VGS=10V ID=8A 25°C 125°C VDS=5V VGS=4.5V VGS=10V 0 5 10 15 20 25 30 0 1 2 3 4 5 ID(A) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=2.5V 3V 10V 4V 5V 3.5V 18 40 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 ID(A) VGS(Volts) Figure 2: Transfer Characteristics (Note E) 10 15 20 25 30 0 5 10 15 20 RDS(ON)(mΩΩΩΩ) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 0.0 0.2 0.4 0.6 0.8 1.0 IS(A) VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 25°C 125°C 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 NormalizedOn-Resistance Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) VGS=4.5V ID=4A VGS=10V ID=8A 10 20 30 40 50 2 4 6 8 10 RDS(ON)(mΩΩΩΩ) VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 25°C 125°C VDS=5V VGS=4.5V VGS=10V ID=8A 25°C 125°C 0 5 10 15 20 25 30 0 1 2 3 4 5 ID(A) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=2.5V 3V 10V 4V 5V 3.5V FET+Schottky Rev 11: Mar. 2011 www.aosmd.com Page 4 of 9
  5. 5. AO4914 Q1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 0 2 4 6 8 10 0 3 6 9 12 15 VGS(Volts) Qg (nC) Figure 7: Gate-Charge Characteristics 0 300 600 900 1200 1500 0 5 10 15 20 25 30 Capacitance(pF) VDS (Volts) Figure 8: Capacitance Characteristics Ciss Coss Crss VDS=15V ID=8A 1 10 100 1000 0.00001 0.001 0.1 10 1000 Power(W) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction- TA=25°C 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 ID(Amps) VDS (Volts) Figure 9: Maximum Forward Biased 10µs 10s 1ms DC RDS(ON) limited TJ(Max)=150°C TA=25°C 100µs 10ms 0 2 4 6 8 10 0 3 6 9 12 15 VGS(Volts) Qg (nC) Figure 7: Gate-Charge Characteristics 0 300 600 900 1200 1500 0 5 10 15 20 25 30 Capacitance(pF) VDS (Volts) Figure 8: Capacitance Characteristics Ciss Coss Crss VDS=15V ID=8A 1 10 100 1000 0.00001 0.001 0.1 10 1000 Power(W) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction- to-Ambient (Note F) TA=25°C 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 ID(Amps) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10µs 10s 1ms DC RDS(ON) limited TJ(Max)=150°C TA=25°C 100µs 10ms 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 ZθθθθJANormalizedTransient ThermalResistance Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W Ton T PD Single Pulse Rev 11: Mar. 2011 www.aosmd.com Page 5 of 9
  6. 6. AO4914 Symbol Min Typ Max Units BVDSS 30 V VDS=30V, VGS=0V 1 TJ=55°C 5 IGSS 10 µA VGS(th) Gate Threshold Voltage 1.2 1.8 2.4 V ID(ON) 40 A 17 20.5 TJ=125°C 23.5 29 20.5 28 mΩ gFS 30 S VSD 0.75 1 V IS 2.5 A Ciss 600 740 888 pF Coss 77 110 145 pF Crss 50 82 115 pF Rg 0.5 1.1 1.7 Ω Qg(10V) 12 15 18 nC Qg(4.5V) 6 7.5 9 nC Qgs 2.5 nC Qgd 3 nC tD(on) 5 ns tr 3.5 ns On state drain current Output Capacitance Q2 Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions RDS(ON) IDSS µA VDS=VGS ID=250µA VDS=0V, VGS=±16V Zero Gate Voltage Drain Current mΩ VGS=4.5V, ID=4A Drain-Source Breakdown Voltage ID=250µA, VGS=0V Static Drain-Source On-Resistance IS=1A,VGS=0V Maximum Body-Diode Continuous Current Input Capacitance Diode Forward Voltage DYNAMIC PARAMETERS VGS=10V, VDS=5V VGS=10V, ID=8A Gate-Body leakage current SWITCHING PARAMETERS Gate Drain Charge Total Gate Charge Reverse Transfer Capacitance VGS=0V, VDS=0V, f=1MHzGate resistance Total Gate Charge VGS=10V, VDS=15V, ID=8A Gate Source Charge VDS=5V, ID=8A VGS=0V, VDS=15V, f=1MHz Forward Transconductance Turn-On DelayTime Turn-On Rise Time VGS=10V, VDS=15V, RL=1.8Ω,tr 3.5 ns tD(off) 19 ns tf 3.5 ns trr 6 8 10 ns Qrr 14 18 22 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Turn-On Rise Time Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs Turn-Off DelayTime IF=8A, dI/dt=500A/µs VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω Body Diode Reverse Recovery Time Turn-Off Fall Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. Rev 11: Mar. 2011 www.aosmd.com Page 6 of 9
  7. 7. AO4914 Q2: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 17 5 2 10 0 18 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 ID(A) VGS(Volts) Figure 2: Transfer Characteristics (Note E) 10 15 20 25 30 0 5 10 15 20 RDS(ON)(mΩΩΩΩ) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 NormalizedOn-Resistance Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) VGS=4.5V ID=4A VGS=10V ID=8A 25°C 125°C VDS=5V VGS=4.5V VGS=10V 0 5 10 15 20 25 30 0 1 2 3 4 5 ID(A) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=2.5V 3V 10V 3.5V 4V 5V 18 40 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 ID(A) VGS(Volts) Figure 2: Transfer Characteristics (Note E) 10 15 20 25 30 0 5 10 15 20 RDS(ON)(mΩΩΩΩ) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -IS(A) -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 25°C 125°C 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 NormalizedOn-Resistance Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) VGS=4.5V ID=4A VGS=10V ID=8A 10 15 20 25 30 35 40 2 4 6 8 10 RDS(ON)(mΩΩΩΩ) VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 25°C 125°C VDS=5V VGS=4.5V VGS=10V ID=8A 25°C 125°C 0 5 10 15 20 25 30 0 1 2 3 4 5 ID(A) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=2.5V 3V 10V 3.5V 4V 5V Rev 11: Mar. 2011 www.aosmd.com Page 7 of 9
  8. 8. AO4914 Q2: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 0 2 4 6 8 10 0 3 6 9 12 15 VGS(Volts) Qg (nC) Figure 7: Gate-Charge Characteristics 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 Capacitance(pF) VDS (Volts) Figure 8: Capacitance Characteristics Ciss Coss Crss VDS=15V ID=8A 1 10 100 1000 0.00001 0.001 0.1 10 1000 Power(W) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction- TA=25°C 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -ID(Amps) -VDS (Volts) Figure 9: Maximum Forward Biased Safe 10µs 10s 1ms DC RDS(ON) TJ(Max)=150°C TA=25°C 100µs 10ms 0 2 4 6 8 10 0 3 6 9 12 15 VGS(Volts) Qg (nC) Figure 7: Gate-Charge Characteristics 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 Capacitance(pF) VDS (Volts) Figure 8: Capacitance Characteristics Ciss Coss Crss VDS=15V ID=8A 1 10 100 1000 0.00001 0.001 0.1 10 1000 Power(W) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction- to-Ambient (Note F) TA=25°C 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -ID(Amps) -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10µs 10s 1ms DC RDS(ON) TJ(Max)=150°C TA=25°C 100µs 10ms 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 ZθθθθJANormalizedTransient ThermalResistance Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W Ton T PD Rev 11: Mar. 2011 www.aosmd.com Page 8 of 9
  9. 9. AO4914 - + VDC Ig Vds DUT - + VDC Vgs Vgs 10V Qg Qgs Qgd Charge Gate Charge Test Circuit & Waveform - + VDC DUT VddVgs Vds Vgs RL Rg Vgs Vds 10% 90% Resistive Switching Test Circuit & Waveforms t trd(on) ton td(off) tf toff Id L Vds BV Unclamped Inductive Switching (UIS) Test Circuit & Waveforms Vds DSS 2 E = 1/2 LIARAR - + VDC Ig Vds DUT - + VDC Vgs Vgs 10V Qg Qgs Qgd Charge Gate Charge Test Circuit & Waveform - + VDC DUT VddVgs Vds Vgs RL Rg Vgs Vds 10% 90% Resistive Switching Test Circuit & Waveforms t trd(on) ton td(off) tf toff VddVgs Id Vgs Rg DUT - + VDC L Vgs Vds Id Vgs BV I Unclamped Inductive Switching (UIS) Test Circuit & Waveforms Ig Vgs - + VDC DUT L Vds Vgs Vds Isd Isd Diode Recovery Test Circuit & Waveforms Vds - Vds + I F AR DSS 2 E = 1/2 LI dI/dt I RM rr Vdd Vdd Q = - Idt ARAR trr Rev 11: Mar. 2011 www.aosmd.com Page 9 of 9

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