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Taiwan laying-open application

Taiwan laying-open application

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Tw201122096 A Tw201122096 A Document Transcript

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  • ;4 j , 00 (19) f. (12)~~{-Jt~~~M]* ~ ml ~a ~J!~ A..NJ (ll)~MIMHt: TW20ll22096Al ....., ~?rFc~~a ~ II l=f (43)~MIa: f" ~ iJ 100 (2011) .if- 07 A 01 a(21)f"tt~~t : 099132618 (22) f"tt E3 : rf -f. ~ @I 99 (2010) ~ 09 A 27 E3(51)Int. Cl. : CllD7/36 ~OO~O~ llOlL21/306 ~OO~O~(30)11: 7t;fJ : 200911 0/24 ~ @I 61/254,669(71) f "tt A. : *ffi ~ (~ @I) LEE, WAI MUN (US) ~@J(72)~aAA. : *ffi~ LEE, WAI MUN (US)(74 )1.1(.1£ A. : ~*- ,"t )Rij~f"ttJfBt:~ : $.it, f"ttj}:;f~$[!IlJ~tt: 20 J~ Iii(.tt: 0 # 27 Ji(54)~~~5t5~ f- ttB£M mfA fJl)5~AbJ~1iit-COMPOSITION AND METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATES(57H~* *~aAl~m~~~~~*~~~~~~.~&~~~fAk~~&1i*o#~~~*~aAl~-~£~f- ttB£~t ~~~4g~ ~fA1t.~i~~tM.7t1&.5t5~~~. 4bJfA fJl~4bJ&1iit- 0 -~£5t5~f- ttB£M ~1i it- Jt ~ %Wf t~ !ff £M ~ HP~ , &;fo +..::. tt£ Jt,1;*@t ..::. If Jt,1;*@t If Jt,1;*@t ~;Ui£ If@t, mt£,1;*@t, 2-mt£L.-,1;*@t, ~fL,1;)lUt~:1fi~Jt@t5tt.%~jt,)J-ifAtt£..::.~@tlLpHft.&~~~-t­)~f~~"t%Jfrl ~ A.~ 6 .f-i:~ 10 &~ ~5;H1.1if1PJT ~fA)Z-/~*$J , "t~tt£..::.~@t ~%~ ~ 1-,~ L.-tt-1,1-..::.~@t §.If £..::.~@t ~§.If £..::.~@t ..::.jl§.1f £..::.~@t ,~li c.,£§.1f £..::.~@t 1-,~£-3­mt~tt-1,1-..::.~@t 1-~£-4-mtTtt-1,1-..::.~@tfAtt£..::.~@t 0 Rl OH O.H. 0 I "(1 I 0 -I> I 110 I 01-1 R2
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  • 201122096 *Jirrx 1t~lm ~1j: ~1j: ~tf1f ~tf1f m£ m£ lm m£ ~ ~1j: i}::£ % tt~ I-f<1Z3Jt=g~M 206 6 0.69 142.1 14.21 3.79 +=m~$:ii~M 326.5 1 0.115 37.55 3.75 1 25% TMAH71<~tf~ ~JWj~1J~pH 6 71< *U~£ *~..§. r~c,.m 1000 I-f<1Zm=gmM 206 6 0.69 142.1 14.21 9.96 ~l§~Ef3~ 128 1 0.115 14.72 1.47 2 25% TMAH71<~tf~ ~JWj~1J:¥pH 6 71< *U~;. *~..§. rvc,.m 1000 I-f<1Zm=gmM 206 6 0.69 142.1 14.21 13.73 1f!!~ 90 1 0.115 10.35 1.04 65% ~ ~ 1t.=. (2- f~ Z ~ ) Ef3 ~ 3 ~~1J~pH 9 (THEMAH) 71< *U~;. *~..§. jc.,~ 1000 1-~ZiJt=gmM 206 6 0.69 142.1 14.21 12.74 g~~ii~~ 97 1 0.115 11.16 1.12 4 45%JJt~~~1tlo/)m~ ~JWj~1J:¥pH 9 71< *U~;. *~..§. !/C13!. 1000 I-f~Z3Jt=gm~ 206 6 0.69 142.1 14.21 16.26 f~£Z~~ 76 1 0.115 8.74 0.87 N,N-=Zf~~g~/- Z~¥g~ 5 ~)WJ~1J~pH 7 (1:1m;.tt) 71< *U~£ ~..§. f,/C,1I! 1000 6 I-f<1Zm=gmM 206 6 0.69 142.1 14.21 14.08 li3iJ1lJ~ 87.8 1 0.115 10.1 1.01 Z=g~ ~JWj~1J:¥pH 10 71< *U~;. - 14-
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  • 201122096 J7JGfB jiJjQ~~/j££~ fjtff!jiJj Wt(051) % I-f~ZJJt=g~~~ DEQUEST 2010 Thennphos 580 13.0% CAS#2809-21-4 r~~z:.~ (70%) Glycolic Acid Dupont 60 1.3% r~~g3(~m~fM (50%) SanFu 600 13.4% - z:.~~H3( (85%) TEA85 Dow 470 10.5% 7j( 2760 61.7% 4470 100.0%o J7JGfB jiJj£~/j££~ fjtff!f,Jj Wt(051) % 1-~z:.~=~~ DEQUEST 2010 Thennphos 530 11.2% CAS#2809-21-4 ~~n~7j(Zg3(~ =: (~Ef3~g~ DEQUEST 2000 Thennphos 90 1.9% ~~) CAS#6419-19-8 N,N-=z:.r~~g3( 85% Arkema 310 6.6% CAS#3710-84-7o -z:.~~g3( MEA Dow 310 6.6% 7j( 3480 73.7% 4720 100% ::$: -x. r:p Jt II • 1ifli -wU B"J *J3. J7JG ~o/] /F ffl ~ ~ ( r e que s t) J3. ii ~f=EfE1Jm~B"JJE~~/F¥A1:r~ 0 - 19 -
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  • 201122096 862638 ~t BA l- *1 ~! BA .- (;zfs:$~*:Ji~rt 11Im ~o/J{£~~ , *§~B7:1~*~) * tJl 1t$~ : 099132618 C- [/ /) "1-1b (2006.01) *tJl1t8 : 099~09)127EJ *IPC~. : rt:>fL L ~b (2006.01) - , it B,ij ~.: (4:>c./ ~ :>c. ) m~*~~~tt m8~*J3.frlG~O/]W 151* Composition and method for cleaning semiconductor substrateso *~~~~m~§~~~ft~~OO~~~~~&~~ ~~mfrlG~&h$o~k~Z*~~~~-m~*~~ ~ttzm~~~OO~~~~~~*~m~~~~~mm~ &l5$o-mm~*~~~ttzl5$,~~~~~~~tt W~*&W+=~~~~M=~~~M~~~M ~e~~M H3Z~~~~ 2-H3Z~Z~wM ~i1iJWM~~~o - 1-
  • 201122096 The compositions and methods herein relate to the method for the removal of residues and contaminants from metal or dielectric surfaces. Particularly, a composition and method of cleaning residues after chemical mechanical polishing of a copper or aluminum surface of the semiconductor substrates. A method of cleaning semiconductor substrates comprising contacting the substrates with a solution of water, and sufficient amount of alkyl diphosphonic acid comprising alkyl diphosphonic acid selected from the group of 1 hydroxyethane 1,1 diphosphonic acid, methylene diphosphonic acid, hydroxymethylene diphosphonic acid, dichloromethylene diphosphonic acid, hydroxycyclohexylmethylene diphosphonic acid, 1- hydroxy-3-aminopropane 1,1 diphosphonic acid, l-hydroxy-4-aminobutane 1,1 diphosphonic acid mixed with dodecylbenzenesulfonic acid, xylenesulfonic acid, toluenesulfonic acid, phosphonoformic acid, sulfamic acid, 2-amino ethane sulfonic acid, or fluoroboric acid or an organic carboxylic acid and pH is adjusted to from greater than 6 to about 10 with a metal ion free base, and a surfactant. -2-
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