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Spintronics
Spintronics
Spintronics
Spintronics
Spintronics
Spintronics
Spintronics
Spintronics
Spintronics
Spintronics
Spintronics
Spintronics
Spintronics
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Spintronics

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spintronics seminar ppt

spintronics seminar ppt

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  • Spin does not replace charge current just provide extra controlUsing suitable materials, many different “bit” states can be interpreted
  • Transcript

    • 1. University College Of Engineering, Rajasthan Technical University, Kota.
      Presentation
      On
      Spintronics Technology
      Submitted To: Presented By :
      Dr R S MeenaShailendra Kumar Singh MrPankajShukla C.R. No : 07/126 Final B. Tech. (ECE)
    • 2. What Is Spintronics ?
      In conventional electronics, electron charge is used for manipulation, storage, and transfer of information .
      Spintronics uses electron spins in addition to or in place of the electron charge.
    • 3. Why We Need Spintronics !
      Failure of Moore’s Law :
      • Moore’s Law states that the number of transistors on a
      silicon chip will roughly double every eighteen months.
      • But now the transistors & other components have reached
      nanoscale dimensions and further reducing
      the size would lead to:
      1. Scorching heat making making the circuit inoperable.
      2. Also Quantum effects come into play at nanoscale
      dimensions.
      • So the size of transistors & other components cannot be
      reduced further.
    • 4. Basic Principle
      • In Spintronics , information is carried by orientation of
      spin rather than charge.
      • Spin can assume one of the two states relative to the magnetic
      field, called spin up or spin down.
      • These states, spin up or spin down, can be used to represent
      ‘1’ and ‘0’ in binary logic.
      • In certain spintronic materials, spin orientation can be used
      as spintronic memory as these orientation do not change
      when system is switched off.
    • 5. Advantage Spintronics
      • Low power consumption.
      • 6. Less heat dissipation.
      • 7. Spintronic memory is non-volatile.
      • 8. Takes up lesser space on chip, thus more compact.
      • 9. Spin manipulation is faster , so greater read & write speed.
      • 10. Spintronics does not require unique and specialized semiconductors.
      Common metals such as Fe, Al, Ag , etc. can beused.
    • 11. GaintMagnetoresistance (GMR)
      • The basic GMR device consists of a layer of non -magnetic metal between two
      two magnetic layers.
      • A current consisting of spin-up and spin-down electrons is passed through
      the layers.
      • Those oriented in the same direction as the electron spins in a magnetic layer pass
      through quite easily while those oriented in the opposite direction are scattered.
    • 12. SPIN VALVES
      • If the orientation of one of the magnetic layers be changed then
      the device will act as a filter, or ‘spin valve’, letting through more
      electrons when the spin orientations in the two layers are the same
      and fewer when orientations are oppositely aligned.
      • The electrical resistance of the device can therefore be changed
      dramatically.
    • 13. Tunnel Magnetoresistance
      • Magnetic tunnel junction has two
      magnetic layers separated by an insulating
      metal-oxide layer.
      • Is similar to a GMR spin valve except that
      a very thin insulator layer is sandwitched
      between magnetic layers instead of metal
      layer .
      • The difference in resistance between the
      spin-aligned and nonaligned cases is much
      greater than for GMR device – infact 1000
      times higher than the standard spin valve.
    • 14. Magnetoresistive Random Access Memory (MRAM)
      • MRAM uses magnetic storage elements.
      • 15. The elements are mostly tunnel junctions formed from two
      ferromagnetic plates, each of which can hold a magnetic field,
      separated by a thin insulating layer.
    • 16. SRAM VS DRAM VS MRAM
      SRAM
      DRAM
      MRAM
      Advantage
      • Fast read & write
      speed.
      speed.
      • Fast read &write
      speed.
      Disadvantage
    • Comparison with DRAM & SRAM
      • In DRAM & SRAM, a bit is represented as charge stored in
      capacitor.
      • In MRAM, data is stored as magnetic alignment of electrons in
      a ferromagnetic material. Spin up represents ‘0’ and spin down
      represents ‘1’.
      • MRAM promises:
      • 25. Density of DRAM
      • 26. Speed of SRAM
      • 27. Non-volatility like flash memory.
      • 28. That’s why its called universal memory.
      256 K MRAM
    • 29. Journey of MRAM
      • Problems encountered:
      1. The density of bits was low.
      2. Cost of chips was high.
      • Improved designs to overcome these problems would work
      only at liquid nitrogen temperature.
      • An important breakthrough was made in the year 2009.
      • 30. Scientists at the North Carolina State University discovered
      a semiconductor material ‘ Galium manganese nitride’ that
      can store & retain spin orientation at room temperature.
      • And research is still going on…
    • Thanks for your attention…!!!
      Any Queries ??

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