Effect of gauss doping profile on electric potential of p-n diode
1. Effect of Gauss Doping Profile
on Electric Potential of p-n Diode
by:
A.A.N. Gde Sapteka
T. Abuzairi
D. Hartanto
P.S. Priambodo
H. Sudibyo
The 13th International Conference on QiR (Quality in Research), 2013
2. Outline
• Motivation
• Theory
• Simulation Procedure
• Result and Discussion
• Conclusion
• Acknowledgment
The 13th International Conference on QiR (Quality in Research), 2013
3. Motivation
The 13th International Conference on QiR (Quality in Research), 2013
Modelling
the Soft Dead Space
Effect on Mean Gain
of Si/Ge Avalanche
Photodiode
Monte Carlo
Method
Si/Ge
Avalanche
Photodiode
Fabrication
Avalanche Photodiode
Simulation
Using COMSOL and
MATLAB Software
4. Outline
• Motivation
• Theory
• Simulation Procedure
• Result and Discussion
• Conclusion
• Acknowledgment
The 13th International Conference on QiR (Quality in Research), 2013
7. Outline
• Motivation
• Theory
• Simulation Procedure
• Result and Discussion
• Conclusion
• Acknowledgment
The 13th International Conference on QiR (Quality in Research), 2013
8. Simulation Procedure
• We simulate the doping concentration of five Gauss Doping
profile (GDP) of p-n diodes, i.e., GDP 1 with dfc = 0.46599 μm;
GDP 2 with dfc = 0.37279 μm; GDP 3 with dfc = 0.27959 μm;
GDP 4 with dfc = 0.18640 μm; GDP 5 with dfc = 0.046599 μm .
In this study, the p-n diodes have p-type doping NA (1 x 1018;
1 x 1017; 1 x 1016; 1 x 1015) cm-3 and n-type doping ND (1 x 1016;
1 x 1015; 1 x 1014; 1 x 1013) cm-3.
• We set NA is 100 times of ND. The diodes have different doping
fall-off constant (dfc) in accordance with Gauss function. The
involved parameters are listed in Table I.
• The relationship between GDP, NA and built-in voltage of p-n
diode is determined using MATLAB.
The 13th International Conference on QiR (Quality in Research), 2013
9. Simulation Procedure
• We analyzed the result to find the relationship between dfc
with Gauss built-in potential (VGbi), and also with maximum
junction voltage (Vjmax) and minimum junction voltage (Vjmin).
• The research conducted by means of simulation of p-n diodes
with Gauss Doping Profile (GDP) using COMSOL.
• The last step was to determine conclusions obtained from the
analysis.
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10. SimulationProcedure
The 13th International Conference on QiR (Quality in Research), 2013
Table I. Definition and Description of Parameters
Parameter Description
N Concentration of free electron (cm-3)
P Concentration of free hole (cm-3)
NA Maximum p-type doping (cm-3)
ND Maximum n-type doping (cm-3)
ni Intrinsic concentration for Si = 1.46 x 1010 (cm-3)
N Doping concentration
Wp Maximum p-type doping thickness (μm)
VAbi, VGbi Abrupt built-in potential (V), Gauss built-in potential (V)
WDp Depletion width in n-type material (cm)
WDn Depletion width in p-type material (cm)
V(x) Electric Potential (V) at depth x
s Relative permittivity for Si = 11.8
11. SimulationProcedure
The 13th International Conference on QiR (Quality in Research), 2013
Table I. Definition and Description of Parameters (cont’d)
Parameter Description
ju Junction depth = -2 μm
y1 Diode dimension = -7 μm
x1 Diode dimension = 5 μm
ac Anode dimension = 2 μm
dfc Doping fall-off constant (μm)
k Boltzmann's constant = 1.3 x 10-23 J/K
T Room temperature = 300 K
q Elementary charge = 1.602 x 10-19 C
Vjmax Maximum junction voltage (V)
Vjmin Minimum junction voltage (V)
Gf Gauss function
12. Outline
• Motivation
• Theory
• Simulation Procedure
• Result and Discussion
• Conclusion
• Acknowledgment
The 13th International Conference on QiR (Quality in Research), 2013
13. Result and Discussion
Fig. 1. Gauss Function
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14. Result and Discussion
Fig. 2. p-n Diode with NA = 1 x 1017 cm-3 and ND = 1 x 1015 cm-3 using GDP 1
The 13th International Conference on QiR (Quality in Research), 2013
15. Result and Discussion
Fig. 3. p-n Diode with NA = 1 x 1017 cm-3 and ND = 1 x 1015 cm-3 using GDP 2
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16. Result and Discussion
Fig. 4. p-n Diode with NA = 1 x 1017 cm-3 and ND = 1 x 1015 cm-3 using GDP 3
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17. Result and Discussion
Fig. 5. p-n Diode with NA = 1 x 1017 cm-3 and ND = 1 x 1015 cm-3 using GDP 4
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18. Result and Discussion
Fig. 6. p-n Diode with NA = 1 x 1017 cm-3 and ND = 1 x 1015 cm-3 using GDP 5
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19. Result and Discussion
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GDP dfc (μm) N1 N2 N3 N4
GDP 1 0.465990 0.813 V 0.695 V 0.575 V 0.456 V
GDP 2 0.372790 0.813 V 0.695 V 0.575 V 0.456 V
GDP 3 0.279590 0.813 V 0.695 V 0.575 V 0.456 V
GDP 4 0.186400 0.813 V 0.695 V 0.575 V 0.456 V
GDP 5 0.093198 0.813 V 0.695 V 0.575 V 0.456 V
Table II. Gauss Doping Profile Built-In Voltage (VGbi)
Where
N1 : NA = 1 x 1018 cm-3 ; ND = 1 x 1016 cm-3
N2 : NA = 1 x 1017 cm-3 ; ND = 1 x 1015 cm-3
N3 : NA = 1 x 1016 cm-3 ; ND = 1 x 1014 cm-3
N4 : NA = 1 x 1015 cm-3 ; ND = 1 x 1013 cm-3
20. Result and Discussion
Fig. 7. Electric Potential of GDP 1 with NA =1 x 1018 cm-3 and ND =1 x 1016 cm-3
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21. Result and Discussion
Fig. 8. Electric Potential of GDP 1 with NA =1 x 1017 cm-3 and ND =1 x 1015 cm-3
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22. Result and Discussion
Fig. 9. Electric Potential of GDP 1 with NA =1 x 1016 cm-3 and ND =1 x 1014 cm-3
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23. Result and Discussion
Fig. 10. Electric Potential of GDP 1 with NA =1 x 1015 cm-3 and ND =1 x 1013 cm-3
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24. Result and Discussion
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NA (cm-3) ND (cm-3) VAbi VGbi % diff
1 x 1018
1 x 1016 0.8135 V 0.8130 V 0.06
1 x 1017 1 x 1015 0.6945 V 0.6950 V 0.07
1 x 1016 1 x 1014 0.5747 V 0.5750 V 0.08
1 x 1015 1 x 1013 0.4565 V 0.4560 V 0.11
Table III. Built-In Voltage Comparison
We propose an equation of built-in voltage for Gauss
Doping Profile as a function of log (NA):
,
25. Result and Discussion
Fig. 11. Relationship of dfc, NA and VGbi.
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26. Result and Discussion
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Fig. 12. Junction voltage of GDP 1 using NA = 1x1018 cm-3; ND = 1x1016 cm-3
27. Result and Discussion
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GDP dfc
N1 N2
Vjmax Vjmin Vjmax Vjmin
GDP 1 0.465990 -0.0402 V -0.0794 V -0.0709 V -0.1344 V
GDP 2 0.372790 -0.0468 V -0.0925 V -0.0813 V -0.1516 V
GDP 3 0.279590 -0.0565 V -0.1122 V -0.0955 V -0.1750 V
GDP 4 0.186400 -0.0734 V -0.1445 V -0.1185 V -0.2078 V
GDP 5 0.093198 -0.1109 V -0.2082 V -0.1615 V -0.2590 V
Table IV. Junction Voltage Vjmax and Vjmin
28. Result and Discussion
The 13th International Conference on QiR (Quality in Research), 2013
GDP dfc
N3 N4
Vjmax Vjmin Vjmax Vjmin
GDP 1 0.465990 -0.1095 V -0.1778 V -0.1541 V -0.1946 V
GDP 2 0.372790 -0.1207 V -0.1924 V -0.1606 V -0.2034 V
GDP 3 0.279590 -0.1360 V -0.2102 V -0.1686 V -0.2134 V
GDP 4 0.186400 -0.1570 V -0.2329 V -0.1784 V -0.2255 V
GDP 5 0.093198 -0.1885 V -0.2641 V -0.1909 V -0.2419 V
Table IV. Junction Voltage Vjmax and Vjmin (con’t)
29. Result and Discussion
Fig. 13. Relationship of dfc, NA, and Vjmin
The 13th International Conference on QiR (Quality in Research), 2013
30. Result and Discussion
Fig. 14. Relationship of dfc, NA, and Vjmax
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31. Result and Discussion
The 13th International Conference on QiR (Quality in Research), 2013
We propose equations for Vjmax as a function of dfc and log NA as stated in equation (11)
where
32. Result and Discussion
The 13th International Conference on QiR (Quality in Research), 2013
We propose equations for Vjmin as a function of dfc and log NA as stated in equation (12)
where
33. Outline
• Motivation
• Theory
• Simulation Procedure
• Result and Discussion
• Conclusion
• Acknowledgment
The 13th International Conference on QiR (Quality in Research), 2013
34. Conclusion
We achieve the relationship between dfc, NA,
and VGbi of p-n Diode with Gauss Doping
Profile in which NA is 100 times of ND as stated
in (10) using MATLAB and COMSOL software.
We also propose equations for Vjmax and Vjmin
as a function of dfc and log (NA) as stated in
(11) and (12).
The 13th International Conference on QiR (Quality in Research), 2013
35. Outline
• Motivation
• Theory
• Simulation Procedure
• Result and Discussion
• Conclusion
• Acknowledgment
The 13th International Conference on QiR (Quality in Research), 2013
36. Acknowledgment
We would like to thank to Pusat Komputer FT UI
for their permission to use MATLAB software
version R2012 and also to the reviewers for
their suggestions and improvements.
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37. Thank You
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