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  1. 1. MANUFACTURING PROCESS OF SOI TECHNOLOGY USING NANO CLEAVINGVIDYA BHARATHI INSTITUTE OF TECHNOLOGY Presented by: G.Anusha (III year) N.Naresh (III year)
  2. 2.  Preamble DifferencesFeaturesManufacturing methods Nano cleavingApplications Advantages Conclusion
  3. 3. PREAMBLESOI•Operating speed•Packaging density
  4. 4. DIFFERENCES
  5. 5. FEATURES: HIGH SPEED VERY LOW DC POWER CONSUMPTION SIGNIFICANT CROSS TALK REDUCTION
  6. 6. MAKING SOI A PRODUCTION TECHNOLOGY:
  7. 7. NANO CLEAVE PROCESS: Reduce cost. Create SOI wafers with exceptional material quality. Wafer bonding steps are accomplished at room temperature. It is highly efficient for chip makers.
  8. 8. NANO CLEAVE DONOR WAFER PROCESS FLOW
  9. 9. ADVANTAGES:  20 to 30% higher operating speed  Low operating voltage  Absence of latch up Increasing chip yield
  10. 10. APPLICATIONS: •USE IN PHOTONICS • IN HIGH PROCESSORS • SMART SENSORS • PORTABLE SYSTEMS
  11. 11. CONCLUSION: Lowering the cost of SOI wafers. Manufacturing process is at room temperature. SOI wafer can be used directly without any edge treatment.
  12. 12. QUERIES???
  13. 13. THANK YOU !!!!!!

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