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Mavd presentation

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  • 1. PROCESS AND DEVICESIMULATIONOFNARROW WIDTHEFFECTINSILVACOSUBMITTED BY:Prashant singh
  • 2. OUTLINE Introduction Process Simulation Device Simulation Review :Normal Narrow Width EffectReverse Narrow Width Effect Simulation Results References
  • 3. INTRODUCTION Process simulation of field oxide bird’s beak in ATHENA. Interface of the 2D structure from ATHENA to DEVEDIT3D. Structure editing to create 3D MOSFET. Interface of the 3D structure from DEVEDIT3D to ATLAS. Simulation of the Id / Vgs characterstics in ATLAS. Extraction of Vt for change in value of width.
  • 4. PROCESS SIMULATION MOSFET Using LOCOS isolation technique. Default models used in ATHENA.
  • 5. DEVICE SIMULATION MODELS Used in ATLAS- SRH Recombination- CVT Mobility model- One carrier model
  • 6. NARROW WIDTH EFFECT As we are shrinking down device size,Narrow Width Effect comes into existence in device isolationtechnique.LOCOS : Normal Narrow Width Effect.TRENCH ISOLATION TECHNIQUE : Reverse NarrowWidth Effect.
  • 7. NORMAL NARROW WIDTH MODEL
  • 8. REVERSE NARROW WIDTH EFFECT
  • 9. • Athena (Silvaco) used to plot for several valuesof width.(Continued from next slide)NARROW WIDTH EFFECT PLOTS
  • 10. Width = 0.1umVth = 0.420291V
  • 11. WIDTH = 0.3umVth = 0.420231 V
  • 12. WIDTH = 0.55umVth = 0.367652 V
  • 13. WIDTH = 0.8umVth = 0.391844V
  • 14. WIDTH = 1.1umVth = 0.391484 V
  • 15. PLOT OF Vth versus WIDTHVds = 0.1VVgs = 0.1 to 1.5 V(RAMP Vgs With stepsize 0.1V)
  • 16. REFERENCES TCAD Reference Manual. SILVACO simulated examples. MOSFET modeling and BSIM3 user’s guide by YuhanCheng and chenming hu.
  • 17. THANK YOU