INTRODUCTION Process simulation of field oxide bird’s beak in ATHENA. Interface of the 2D structure from ATHENA to DEVEDIT3D. Structure editing to create 3D MOSFET. Interface of the 3D structure from DEVEDIT3D to ATLAS. Simulation of the Id / Vgs characterstics in ATLAS. Extraction of Vt for change in value of width.
PROCESS SIMULATION MOSFET Using LOCOS isolation technique. Default models used in ATHENA.
DEVICE SIMULATION MODELS Used in ATLAS- SRH Recombination- CVT Mobility model- One carrier model
NARROW WIDTH EFFECT As we are shrinking down device size,Narrow Width Effect comes into existence in device isolationtechnique.LOCOS : Normal Narrow Width Effect.TRENCH ISOLATION TECHNIQUE : Reverse NarrowWidth Effect.