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Indium gallium-nitride
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Indium gallium-nitride

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  • The band gap is the energy difference between the top of the valence band and the bottom of the conduction band. If electrons in the valence band receive the correct amount of energy, they may jump to the conduction band. In the conductive band, electrons can be accelerated by an electric field to produce an electric current.
  • Berkley National Laboratory, Crystal growing teams at Cornell, and Ritsumeikan University. Band gap of Indium Nitride found to be 0.7 eV instead of 2.0 eV By adjusting the composition percentages of Indium Gallium Nitride, the correct band gap can be tuned to any part of the electromagnetic spectrum and by creating multiple layers of different compositions, solar panels can be engineered to collect the maximum amount of Energy.

Transcript

  • 1. IndIumgallIumnItrIde
  • 2. Characteristics of Indium GalliumNitride• Semi Conductor Material• high heat capacity• mix of gallium nitride (GaN) and indiumnitride (InN)• Defect Rich
  • 3. Band Gap• Between Valence andConduction bands.• Electrons may jump fromvalence to conduction band ifsupplied with specific energy.• This specific energy is uniquefor all materials.Conductor Band
  • 4. Lab Discovery•Semiconductor Indium Nitride bandgap re-measured and found to be0.7eV instead of 2.0eV.•By Adjusting the composition %’s itcan be tuned to any part of theelectromagnetic spectrum.
  • 5. Advantages / DisadvantagesDisadvantages•Difficult to dope to createp-type material•Billions of defects persquare centimeter.Advantages•Low Band gap (o.7eV)•Smooth gap-curve whenadjusting alloy composition.• Easily made into layers(very tolerant tomismatched latticesystems)
  • 6. Advantages / DisadvantagesDisadvantages•Difficult to dope to createp-type material•Billions of defects persquare centimeter.Advantages•Low Band gap (o.7eV)•Smooth gap-curve whenadjusting alloy composition.• Easily made into layers(very tolerant tomismatched latticesystems)