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Lecture on Introduction of Semiconductor at North South University as the undergraduate course (ETE411)...

Lecture on Introduction of Semiconductor at North South University as the undergraduate course (ETE411)
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Dr. Mashiur Rahman
Assistant Professor
Dept. of Electrical Engineering and Computer Science
North South University, Dhaka, Bangladesh
http://mashiur.biggani.org

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Ete411 Lec16 Mos Ete411 Lec16 Mos Presentation Transcript

  • ETE411 :: Lec16MOS
    Dr. MashiurRahman
    Copyright: Semiconductor Physics And Devices 3rd ed. - J. Neamen
  • Basic MOS capacitor structure
  • How it works?
    A parallel-plate capacitor showing the electric field and conductor charges
    A corresponding MOS capacitor with a negative gate bias showing the electric field and charge flow
    The MOS capacitor with an accumulation layer of holes
  • MOS capacitor with a moderate positive gate bias
    Induced space charge region
    Electric field and charge flow
  • MOS capacitor with a p-type substrate
    A negative gate bias
    Moderate positive gate bias
    We have inverted the surface of the semiconductor from a p-type to an n-type semiconductor
  • A “large” positive gate bias
  • N-type substrate
    Positive gate bias
    Moderate negative gate bias
  • MOS with n-type substrate
    Positive gate bias
    Moderate negative gate bias
    A “large” negative gate bias
  • Depletion layer thickness
    Acceptor doping concentration
    Surface potential
    Permittivity of the semiconductor
  • Maximum space charge width
    Фs = 2 Фfp
    eФs = 2e Фfp
    This condition is known as threshold inversion point
    Applied voltage is the threshold voltage
  • Quiz 6
    Quiz 6 will be held on Tuesday 4 July.
    Lec 13
    Lec 14
    Mid 2 (8 August, Saturday) Lec 8 - Lec 15
    Votes:
    10-1: 0
    2-4: 5 person
    3-5: 14 person
    6-8: 9 person
  • The energy-band diagram in the n-type semiconductor at the threshold inversion point