Optical EmissionFrom Semiconductor                  Md     Presented                 Manzar        By                 Nezami
Point Of DiscussionExplain with the help of energy band structure, the process of optical emission from semiconductor.
To allow consideration of semiconductor optical sources it is necessary to review some of the properties of semiconductor...
semiconductorIntrinsic       Extrinsic
Intrinsic Semiconductor: A perfect semiconductor crystal containing no impurities and lattice effect.Extrinsic Semicondu...
For a semiconductor in thermal equilibrium the energy level occupation is described by fermi dirac distribution function....
• To create an extrinsic semicondutor the material  is doped with impurity atoms which creates  either more free electrons...
The p-n junction diodeThe p-n junction diode is formed by creating adjoining p and n type semiconductor layers in single ...
Opto ppt
Opto ppt
Opto ppt
Opto ppt
Opto ppt
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optical emission from semiconductor using energy band structure.

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Opto ppt

  1. 1. Optical EmissionFrom Semiconductor Md Presented Manzar By Nezami
  2. 2. Point Of DiscussionExplain with the help of energy band structure, the process of optical emission from semiconductor.
  3. 3. To allow consideration of semiconductor optical sources it is necessary to review some of the properties of semiconductor materials, especially with regard to p-n junction.
  4. 4. semiconductorIntrinsic Extrinsic
  5. 5. Intrinsic Semiconductor: A perfect semiconductor crystal containing no impurities and lattice effect.Extrinsic Semiconductor: A semiconductor crystal which is made up by the process of doping, i.e. adding impurity to it.
  6. 6. For a semiconductor in thermal equilibrium the energy level occupation is described by fermi dirac distribution function. Consequently the probability p(E) that an electron gains sufficient thermal energy at an absolute temperature T such that it will be found occupying a particular energy level E, is given by the fermi-dirac distribution. P(E)=1/{1+exp(E-Ef )/kT}
  7. 7. • To create an extrinsic semicondutor the material is doped with impurity atoms which creates either more free electrons (donor impurity) or holes(acceptor impurity)
  8. 8. The p-n junction diodeThe p-n junction diode is formed by creating adjoining p and n type semiconductor layers in single crystal.A thin depletion region is formed at the junction through carrier recombination.This establishes a potential barrier between the p and n type regions which restricts the inter diffusion of majority carriers from their respective regions.An external applied voltage form current flow through the device as they continuously diffuse away from the interface.However, this situation in suitable semiconductor allows carrier recombination with the emission of light.
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