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EFFECT OF BIOFIELD TREATMENT ON STRUCTURAL
AND MORPHOLOGICAL PROPERTIES OF SILICON
CARBIDE
• Trivedi Global Inc., 10624 S Eastern Avenue Suite A-969, Henderson, NV 89052, USA
• Trivedi Science Research Laboratory Pvt. Ltd., Hall-A, Chinar Mega Mall, Chinar Fortune City,
Hoshangabad Rd., Bhopal- 462026, Madhya Pradesh, India
SiC
Silicon Carbide
INTRODUCTION
Biofield Treatment:
“Human has ability to harness the energy from environment/ universe and can transmit into any object (living or non-
living) around the Globe. The object(s) always receive the energy and responded into useful way that is called biofield
energy and this process is termed as biofield treatment.”
The biofield is a cumulative outcome of electric and magnetic field, exerted by the human body. It is generates through
some internal dynamic processes such as blood flow, lymph flow, brain and heart function in the human body.
Recently, Mr. Trivedi’s biofield has made significant breakthrough in various research areas such as material science,
biotechnology, microbiology, and agriculture. This biofield treatment had also changed the particle size, surface area
and lattice parameters in various ceramic powders such as Vanadium Pentoxide (V2O5), zirconium oxide (ZrO2 ), and
silicon dioxide (SiO2).
About Silicon Carbide:
• Silicon carbide (SiC) is a well-known ceramic due to its excellent spectral absorbance and thermo-mechanical
properties.
• The wide band gap, high melting point and thermal conductivity of SiC is used in high temperature applications.
• The silicon carbide (SiC), naturally exists in about 250 crystalline forms. Out of them, two most commonly
recognized forms of SiC are: cubic (β-SiC) and hexagonal (α-SiC).
• The α-SiC crystalline form exists : 2H-SiC, 4H-SiC, and 6H-SiC as per number of hexagonal layer present in a unit
cell; for instance 6H-SiC have six layers.
In some recent researches, the Biofield Energy treatment has reported changing the physical, thermal and structural
properties of various ceramic powders. Based on the knowledge of existing literatures on Biofield Energy Treatment and
considering the industrial significance of SiC, in present work an effort has been made to study the impact of biofield
treatment on physical and structural properties of SiC.
STUDY DESIGN
Mahendra Kumar Trivedi
Mahendra Kumar Trivedi has the unique ability to harness the energy from the universe and transmit it to anywhere on
the globe, infusing it into living organisms and nonliving materials, thus optimizing their potential. Trivedi applied this
newfound discovery to helping people optimize their potential, and this unique phenomenon resulting from Mr.
Mahendra Trivedi’s biofield energy treatments became internationally renown as The Trivedi Effect®.
The Trivedi Effect
The Trivedi Effect® is the only scientifically proven phenomenon in which a person can harness this inherently
intelligent energy and transmit it anywhere on the planet. It stands at the forefront of a new scientific paradigm that
will forever shape humanity’s future. In addition to optimizing the human condition, it has the power to transform the
cellular structures of all living organisms. Even further, it has the incredible capacity to permanently alter the atomic
structures of non-living materials. Its impact has been tested, measured, documented and validated with the most
sophisticated technologies available to modern science in over 4,000 experiments at numerous research institutes and
universities across the globe.
SiC Powder Sample
• SiC powder sample was equally distributed into two parts. One part was considered as Control and another part
was subjected to Mr. Trivedi’s biofield treatment and considered as Treated.
Control Treated with Biofield Energy Treatment
• Mr. Trivedi provided the biofield treatment through his energy transmission process to the treated group without
touching the sample.
• The treated part was further divided into four groups T1, T2, T3 and T4 and accessed on different time period.
SiC
Silicon Carbide
Control
SiC
Silicon Carbide
Treated
Biofield Energy
Treatment
EXPERIMENT
Analytics Study
• The control and treated samples of SiC powder were characterized using X-ray diffraction study (XRD), surface area
analyzer, particle size analyzer and Fourier transform infrared (FTIR) spectroscopy.
X-ray diffraction
study
• XRD analysis of
control and treated
SiC powder was
carried out on X-ray
diffractometer Phillips,
Holland PW 1710
system, which had a
copper anode with
nickel filter.
Surface Area
Analysis
• Surface area analyzer
SMART SORB 90 BET
was used for
evaluation of surface
area, which had a
detection range of 0.1-
1000 m2/g.
Particle size analysis
• For particle size
analysis, Laser
particle size analyzer
SYMPATEC HELOS-
BF was used, which
had a detection range
of 0⋅1-875 μm. The
particle size data was
collected in the form of
a chart of particle size
vs. cumulative
percentage.
FT-IR spectroscopy
• FT-IR analysis was
done on Shimadzu,
Fourier Transform
Infrared (FT-IR)
Spectrometer with
frequency range of
300-4000 cm-1. The
structural changes of
control and treated
samples T1, and T2 of
SiC were evaluated on
day 60 and day 100
respectively.
RESULTS
X-ray diffraction study
• The lattice parameter of unit cell, volume of unit cell and densities of SiC were computed from XRD diffractogram
using Powder X software, and results are reported in Table 1, Figures 4 and 5.
Parameter
Control
(day 1)
T1 (day
60)
T2 (day
90)
T3 (day
114)
T4 (day
130)
Lattice Parameter (Å) 3.095 3.0927 3.09 3.0926 3.0897
Percent change in Lattice
Parameter
-0.08 -0.16 -0.08 -0.17
Unit cell Volume (10-22
cm3
) 1.259 1.257 1.255 1.257 1.254
Percent change in Unit cell
Volume
-0.15 -0.33 -0.16 -0.34
Density (g/cc) 3.193 3.197 3.203 3.198 3.204
Percent change in Density 0.153 0.329 0.158 0.345
Molecular weight (g/mol) 40.34 40.28 40.21 40.28 40.2
Percent change in Mol.
Weight
-0.15 -0.33 -0.16 -0.34
Crystallite Size (nm) 62.04 54.29 86.89 72.4 72.41
Percent change in
Crystallite Size
-12.49 40.06 16.7 16.71
Table 1 Atomic and structural parameters of control and
treated SiC calculated from XRD patterns
Figure 4 Percentage change in characteristics in treated SiC
sample as compared with control
Highlights:
• It was found that lattice parameter of unit cell was
reduced upto 0.17% in treated sample as compared
to control (Figure 4).
X-ray diffraction study
• The lattice parameter of unit cell, volume of unit cell and densities of SiC were computed from XRD diffractogram
using Powder X software, and results are reported in Table 1, Figures 4 and 5.
Table 1 Atomic and structural parameters of control and treated SiC
calculated from XRD patterns
Figure 4 Percentage change in characteristics in treated SiC
sample as compared with control
Highlights:
• The decrease in lattice parameter in treated sample
led to decrease in volume of unit cell up to 0.34%
and consequently increased the density by 0.354%
in treated SiC as compared to control (Figure 4).
Parameter
Control
(day 1)
T1 (day
60)
T2 (day
90)
T3 (day
114)
T4 (day
130)
Lattice Parameter (Å) 3.095 3.0927 3.09 3.0926 3.0897
Percent change in Lattice
Parameter
-0.08 -0.16 -0.08 -0.17
Unit cell Volume (10-22
cm3
) 1.259 1.257 1.255 1.257 1.254
Percent change in Unit cell
Volume
-0.15 -0.33 -0.16 -0.34
Density (g/cc) 3.193 3.197 3.203 3.198 3.204
Percent change in Density 0.153 0.329 0.158 0.345
Molecular weight (g/mol) 40.34 40.28 40.21 40.28 40.2
Percent change in Mol.
Weight
-0.15 -0.33 -0.16 -0.34
Crystallite Size (nm) 62.04 54.29 86.89 72.4 72.41
Percent change in
Crystallite Size
-12.49 40.06 16.7 16.71
X-ray diffraction study
• The lattice parameter of unit cell, volume of unit cell and densities of SiC were computed from XRD diffractogram
using Powder X software, and results are reported in Table 1, Figures 4 and 5.
Table 1 Atomic and structural parameters of control and treated SiC
calculated from XRD patterns
Figure 4 Percentage change in characteristics in treated SiC
sample as compared with control
Highlights:
• The increased density should increase the molecular
weight, but it was not observed in the experiment.
Rather, the molecular weight of treated SiC sample
was reduced by 0.354% as compared to control
Parameter
Control
(day 1)
T1 (day
60)
T2 (day
90)
T3 (day
114)
T4 (day
130)
Lattice Parameter (Å) 3.095 3.0927 3.09 3.0926 3.0897
Percent change in Lattice
Parameter
-0.08 -0.16 -0.08 -0.17
Unit cell Volume (10-22
cm3
) 1.259 1.257 1.255 1.257 1.254
Percent change in Unit cell
Volume
-0.15 -0.33 -0.16 -0.34
Density (g/cc) 3.193 3.197 3.203 3.198 3.204
Percent change in Density 0.153 0.329 0.158 0.345
Molecular weight (g/mol) 40.34 40.28 40.21 40.28 40.2
Percent change in Mol.
Weight
-0.15 -0.33 -0.16 -0.34
Crystallite Size (nm) 62.04 54.29 86.89 72.4 72.41
Percent change in
Crystallite Size
-12.49 40.06 16.7 16.71
X-ray diffraction study
• The lattice parameter of unit cell, volume of unit cell and densities of SiC were computed from XRD diffractogram
using Powder X software, and results are reported in Table 1, Figures 4 and 5.
Table 1 Atomic and structural parameters of control and
treated SiC calculated from XRD patterns Figure 5 Percentage change in crystallite size in treated SiC
sample as compared with control
Highlights:
• The crystallite size (coherently scattering domains
size) was reduced by 12.70% in treated T1 as
compared to control.
• The crystallite size was enlarged by 40.06%,
16.70%, and 16.71% in treated samples T2, T3 and
T4 respectively
Parameter
Control
(day 1)
T1 (day
60)
T2 (day
90)
T3 (day
114)
T4 (day
130)
Lattice Parameter (Å) 3.095 3.0927 3.09 3.0926 3.0897
Percent change in Lattice
Parameter
-0.08 -0.16 -0.08 -0.17
Unit cell Volume (10-22
cm3
) 1.259 1.257 1.255 1.257 1.254
Percent change in Unit cell
Volume
-0.15 -0.33 -0.16 -0.34
Density (g/cc) 3.193 3.197 3.203 3.198 3.204
Percent change in Density 0.153 0.329 0.158 0.345
Molecular weight (g/mol) 40.34 40.28 40.21 40.28 40.2
Percent change in Mol.
Weight
-0.15 -0.33 -0.16 -0.34
Crystallite Size (nm) 62.04 54.29 86.89 72.4 72.41
Percent change in
Crystallite Size
-12.49 40.06 16.7 16.71
X-ray diffraction study
• The lattice parameter of unit cell, volume of unit cell and densities of SiC were computed from XRD diffractogram
using Powder X software, and results are reported in Table 1, Figures 4 and 5.
Highlights:
• Thus, it is hypothesized that high energy milling
through biofield treatment may induce the
movement of crystallite boundaries that results into
large crystallite size.
• Thus, it is speculated that the change in crystallite
size through biofield treatment may led to alter the
band gap in SiC powder.
Parameter
Control
(day 1)
T1 (day
60)
T2 (day
90)
T3 (day
114)
T4 (day
130)
Lattice Parameter (Å) 3.095 3.0927 3.09 3.0926 3.0897
Percent change in Lattice
Parameter
-0.08 -0.16 -0.08 -0.17
Unit cell Volume (10-22
cm3
) 1.259 1.257 1.255 1.257 1.254
Percent change in Unit cell
Volume
-0.15 -0.33 -0.16 -0.34
Density (g/cc) 3.193 3.197 3.203 3.198 3.204
Percent change in Density 0.153 0.329 0.158 0.345
Molecular weight (g/mol) 40.34 40.28 40.21 40.28 40.2
Percent change in Mol.
Weight
-0.15 -0.33 -0.16 -0.34
Crystallite Size (nm) 62.04 54.29 86.89 72.4 72.41
Percent change in
Crystallite Size
-12.49 40.06 16.7 16.71
Table 1 Atomic and structural parameters of control and
treated SiC calculated from XRD patterns Figure 5 Percentage change in crystallite size in treated SiC
sample as compared with control
Particle Size Analysis
The particle size result of control and treated samples are presented in Table 2 and Figure 2, and summarized below.
• It was found that the average particle size d50,
increased up to 2.4% in treated SiC, whereas d99,
increased by 1.9% as compared to control (Figure
2).
• The graph showed that the percent change in
d50, increases and d99, decreases with increase in
number of days after treatment. It indicates that,
the coarser particles may be fractured and
transformed into finer particles after biofield
treatment.
Table 2: Biofield effect on average particle size (d50) and d99
Particle size
Control
(day 1)
Treated T2
(day 12)
Treated T22
(day 85)
Treated T3
(day 92)
Treated T4
(day 100)
d50 (μm) 20.8 20.9 21.3 21.3 21.3
d99(μm) 43.1 43.9 43.3 43.1 43.3
Figure 2: Percentage change in particle size d50 and d99 in biofield
treated SiC as compared to control
Surface Area Analysis
The surface area analysis results of control and treated samples are presented in Figure 3 and summarized below:
• The specific surface area was
significantly decreased by
23.6%, 71.16% and 23.60% on
day 12, day 85 and day 99,
respectively as compared to
control.
• This is possible when sharp
corners with irregular shape like
hills and valleys on the particle
surfaces become rounded.
• Additionally, it is also possible
that the smaller particles may
come together and welded
through surface diffusion
Figure 3: Percentage change in Surface area in biofield treated
SiC as compared to control
FT-IR Spectroscopy Analysis
FT-IR spectroscopy IR spectrum of control and treated samples are illustrated in Figures 6 and 7, respectively and
summarized below:
• The absorption peaks observed around 750 cm-1 and 937 cm-1 in treated and control samples, respectively, which
were attributed to Si-C bond stretching vibrations.
• Moreover, it was observed that absorption peaks at 947 cm-1 (control) was slightly shifted to lower wavenumber at
937 cm-1 (T1) and 925 cm-1 (T2) after treatment, which might be due to reduced bond strength and changed inter-
atomic interactions through biofield treatment.
Figure 6: IR Spectra of control and treated SiC powder sample T1
on day 60.
Figure 7: IR Spectra of control and treated SiC powder sample T2
on day 100.
CONCLUSION
In Summary:
• The biofield treatment has altered the particle size with the increment of 2.4% and significantly reduced the specific
surface area by 71.16% in SiC powders.
• This could be due to change in particle shape and re-welding process caused by high energy milling through biofield
treatment.
• Furthermore, the crystallite size in treated SiC powder was significantly changed as compared to control. Hence, the
biofield treatment may affect the energy band gap of SiC.
• The shifting of IR peaks towards lower frequency revealed that silicon–carbon bond stretching might alter through
biofield treatment. This indicates that biofield might be acting at atomic level in SiC powder to cause these changes.
• Altogether, the study results suggest that biofield treated SiC powder might be useful for high temperature
electronic device applications.
ACKNOWLEDGEMENT
&
LINKS
Acknowledgement:
• Authors thankfully acknowledge Dr. Cheng Dong of NLSC, Institute of Physics, and Chinese academy of Sciences for
supporting in using PowderX software for analysing X-ray Diffraction results.
Full Research Papers and links :
• Please visit the below links to read the full research paper with a list of reference links.
• http://trivediscience.com/publications/materials-science-publications/effect-of-biofield-treatment-on-structural-
and-morphological-properties-of-silicon-carbide/
• http://www.omicsgroup.org/journals/effect-of-biofield-treatment-on-structural-and-morphological-properties-of-
silicon-carbide-2168-9806-1000132.pdf
THANK YOU!
FOR YOUR ATTENTION

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Effect of Biofield Treatment on Structural and Morphological Properties of Silicon Carbide

  • 1. EFFECT OF BIOFIELD TREATMENT ON STRUCTURAL AND MORPHOLOGICAL PROPERTIES OF SILICON CARBIDE • Trivedi Global Inc., 10624 S Eastern Avenue Suite A-969, Henderson, NV 89052, USA • Trivedi Science Research Laboratory Pvt. Ltd., Hall-A, Chinar Mega Mall, Chinar Fortune City, Hoshangabad Rd., Bhopal- 462026, Madhya Pradesh, India SiC Silicon Carbide
  • 3. Biofield Treatment: “Human has ability to harness the energy from environment/ universe and can transmit into any object (living or non- living) around the Globe. The object(s) always receive the energy and responded into useful way that is called biofield energy and this process is termed as biofield treatment.” The biofield is a cumulative outcome of electric and magnetic field, exerted by the human body. It is generates through some internal dynamic processes such as blood flow, lymph flow, brain and heart function in the human body. Recently, Mr. Trivedi’s biofield has made significant breakthrough in various research areas such as material science, biotechnology, microbiology, and agriculture. This biofield treatment had also changed the particle size, surface area and lattice parameters in various ceramic powders such as Vanadium Pentoxide (V2O5), zirconium oxide (ZrO2 ), and silicon dioxide (SiO2).
  • 4. About Silicon Carbide: • Silicon carbide (SiC) is a well-known ceramic due to its excellent spectral absorbance and thermo-mechanical properties. • The wide band gap, high melting point and thermal conductivity of SiC is used in high temperature applications. • The silicon carbide (SiC), naturally exists in about 250 crystalline forms. Out of them, two most commonly recognized forms of SiC are: cubic (β-SiC) and hexagonal (α-SiC). • The α-SiC crystalline form exists : 2H-SiC, 4H-SiC, and 6H-SiC as per number of hexagonal layer present in a unit cell; for instance 6H-SiC have six layers. In some recent researches, the Biofield Energy treatment has reported changing the physical, thermal and structural properties of various ceramic powders. Based on the knowledge of existing literatures on Biofield Energy Treatment and considering the industrial significance of SiC, in present work an effort has been made to study the impact of biofield treatment on physical and structural properties of SiC.
  • 6. Mahendra Kumar Trivedi Mahendra Kumar Trivedi has the unique ability to harness the energy from the universe and transmit it to anywhere on the globe, infusing it into living organisms and nonliving materials, thus optimizing their potential. Trivedi applied this newfound discovery to helping people optimize their potential, and this unique phenomenon resulting from Mr. Mahendra Trivedi’s biofield energy treatments became internationally renown as The Trivedi Effect®.
  • 7. The Trivedi Effect The Trivedi Effect® is the only scientifically proven phenomenon in which a person can harness this inherently intelligent energy and transmit it anywhere on the planet. It stands at the forefront of a new scientific paradigm that will forever shape humanity’s future. In addition to optimizing the human condition, it has the power to transform the cellular structures of all living organisms. Even further, it has the incredible capacity to permanently alter the atomic structures of non-living materials. Its impact has been tested, measured, documented and validated with the most sophisticated technologies available to modern science in over 4,000 experiments at numerous research institutes and universities across the globe.
  • 8. SiC Powder Sample • SiC powder sample was equally distributed into two parts. One part was considered as Control and another part was subjected to Mr. Trivedi’s biofield treatment and considered as Treated. Control Treated with Biofield Energy Treatment • Mr. Trivedi provided the biofield treatment through his energy transmission process to the treated group without touching the sample. • The treated part was further divided into four groups T1, T2, T3 and T4 and accessed on different time period. SiC Silicon Carbide Control SiC Silicon Carbide Treated Biofield Energy Treatment
  • 10. Analytics Study • The control and treated samples of SiC powder were characterized using X-ray diffraction study (XRD), surface area analyzer, particle size analyzer and Fourier transform infrared (FTIR) spectroscopy. X-ray diffraction study • XRD analysis of control and treated SiC powder was carried out on X-ray diffractometer Phillips, Holland PW 1710 system, which had a copper anode with nickel filter. Surface Area Analysis • Surface area analyzer SMART SORB 90 BET was used for evaluation of surface area, which had a detection range of 0.1- 1000 m2/g. Particle size analysis • For particle size analysis, Laser particle size analyzer SYMPATEC HELOS- BF was used, which had a detection range of 0⋅1-875 μm. The particle size data was collected in the form of a chart of particle size vs. cumulative percentage. FT-IR spectroscopy • FT-IR analysis was done on Shimadzu, Fourier Transform Infrared (FT-IR) Spectrometer with frequency range of 300-4000 cm-1. The structural changes of control and treated samples T1, and T2 of SiC were evaluated on day 60 and day 100 respectively.
  • 12. X-ray diffraction study • The lattice parameter of unit cell, volume of unit cell and densities of SiC were computed from XRD diffractogram using Powder X software, and results are reported in Table 1, Figures 4 and 5. Parameter Control (day 1) T1 (day 60) T2 (day 90) T3 (day 114) T4 (day 130) Lattice Parameter (Å) 3.095 3.0927 3.09 3.0926 3.0897 Percent change in Lattice Parameter -0.08 -0.16 -0.08 -0.17 Unit cell Volume (10-22 cm3 ) 1.259 1.257 1.255 1.257 1.254 Percent change in Unit cell Volume -0.15 -0.33 -0.16 -0.34 Density (g/cc) 3.193 3.197 3.203 3.198 3.204 Percent change in Density 0.153 0.329 0.158 0.345 Molecular weight (g/mol) 40.34 40.28 40.21 40.28 40.2 Percent change in Mol. Weight -0.15 -0.33 -0.16 -0.34 Crystallite Size (nm) 62.04 54.29 86.89 72.4 72.41 Percent change in Crystallite Size -12.49 40.06 16.7 16.71 Table 1 Atomic and structural parameters of control and treated SiC calculated from XRD patterns Figure 4 Percentage change in characteristics in treated SiC sample as compared with control Highlights: • It was found that lattice parameter of unit cell was reduced upto 0.17% in treated sample as compared to control (Figure 4).
  • 13. X-ray diffraction study • The lattice parameter of unit cell, volume of unit cell and densities of SiC were computed from XRD diffractogram using Powder X software, and results are reported in Table 1, Figures 4 and 5. Table 1 Atomic and structural parameters of control and treated SiC calculated from XRD patterns Figure 4 Percentage change in characteristics in treated SiC sample as compared with control Highlights: • The decrease in lattice parameter in treated sample led to decrease in volume of unit cell up to 0.34% and consequently increased the density by 0.354% in treated SiC as compared to control (Figure 4). Parameter Control (day 1) T1 (day 60) T2 (day 90) T3 (day 114) T4 (day 130) Lattice Parameter (Å) 3.095 3.0927 3.09 3.0926 3.0897 Percent change in Lattice Parameter -0.08 -0.16 -0.08 -0.17 Unit cell Volume (10-22 cm3 ) 1.259 1.257 1.255 1.257 1.254 Percent change in Unit cell Volume -0.15 -0.33 -0.16 -0.34 Density (g/cc) 3.193 3.197 3.203 3.198 3.204 Percent change in Density 0.153 0.329 0.158 0.345 Molecular weight (g/mol) 40.34 40.28 40.21 40.28 40.2 Percent change in Mol. Weight -0.15 -0.33 -0.16 -0.34 Crystallite Size (nm) 62.04 54.29 86.89 72.4 72.41 Percent change in Crystallite Size -12.49 40.06 16.7 16.71
  • 14. X-ray diffraction study • The lattice parameter of unit cell, volume of unit cell and densities of SiC were computed from XRD diffractogram using Powder X software, and results are reported in Table 1, Figures 4 and 5. Table 1 Atomic and structural parameters of control and treated SiC calculated from XRD patterns Figure 4 Percentage change in characteristics in treated SiC sample as compared with control Highlights: • The increased density should increase the molecular weight, but it was not observed in the experiment. Rather, the molecular weight of treated SiC sample was reduced by 0.354% as compared to control Parameter Control (day 1) T1 (day 60) T2 (day 90) T3 (day 114) T4 (day 130) Lattice Parameter (Å) 3.095 3.0927 3.09 3.0926 3.0897 Percent change in Lattice Parameter -0.08 -0.16 -0.08 -0.17 Unit cell Volume (10-22 cm3 ) 1.259 1.257 1.255 1.257 1.254 Percent change in Unit cell Volume -0.15 -0.33 -0.16 -0.34 Density (g/cc) 3.193 3.197 3.203 3.198 3.204 Percent change in Density 0.153 0.329 0.158 0.345 Molecular weight (g/mol) 40.34 40.28 40.21 40.28 40.2 Percent change in Mol. Weight -0.15 -0.33 -0.16 -0.34 Crystallite Size (nm) 62.04 54.29 86.89 72.4 72.41 Percent change in Crystallite Size -12.49 40.06 16.7 16.71
  • 15. X-ray diffraction study • The lattice parameter of unit cell, volume of unit cell and densities of SiC were computed from XRD diffractogram using Powder X software, and results are reported in Table 1, Figures 4 and 5. Table 1 Atomic and structural parameters of control and treated SiC calculated from XRD patterns Figure 5 Percentage change in crystallite size in treated SiC sample as compared with control Highlights: • The crystallite size (coherently scattering domains size) was reduced by 12.70% in treated T1 as compared to control. • The crystallite size was enlarged by 40.06%, 16.70%, and 16.71% in treated samples T2, T3 and T4 respectively Parameter Control (day 1) T1 (day 60) T2 (day 90) T3 (day 114) T4 (day 130) Lattice Parameter (Å) 3.095 3.0927 3.09 3.0926 3.0897 Percent change in Lattice Parameter -0.08 -0.16 -0.08 -0.17 Unit cell Volume (10-22 cm3 ) 1.259 1.257 1.255 1.257 1.254 Percent change in Unit cell Volume -0.15 -0.33 -0.16 -0.34 Density (g/cc) 3.193 3.197 3.203 3.198 3.204 Percent change in Density 0.153 0.329 0.158 0.345 Molecular weight (g/mol) 40.34 40.28 40.21 40.28 40.2 Percent change in Mol. Weight -0.15 -0.33 -0.16 -0.34 Crystallite Size (nm) 62.04 54.29 86.89 72.4 72.41 Percent change in Crystallite Size -12.49 40.06 16.7 16.71
  • 16. X-ray diffraction study • The lattice parameter of unit cell, volume of unit cell and densities of SiC were computed from XRD diffractogram using Powder X software, and results are reported in Table 1, Figures 4 and 5. Highlights: • Thus, it is hypothesized that high energy milling through biofield treatment may induce the movement of crystallite boundaries that results into large crystallite size. • Thus, it is speculated that the change in crystallite size through biofield treatment may led to alter the band gap in SiC powder. Parameter Control (day 1) T1 (day 60) T2 (day 90) T3 (day 114) T4 (day 130) Lattice Parameter (Å) 3.095 3.0927 3.09 3.0926 3.0897 Percent change in Lattice Parameter -0.08 -0.16 -0.08 -0.17 Unit cell Volume (10-22 cm3 ) 1.259 1.257 1.255 1.257 1.254 Percent change in Unit cell Volume -0.15 -0.33 -0.16 -0.34 Density (g/cc) 3.193 3.197 3.203 3.198 3.204 Percent change in Density 0.153 0.329 0.158 0.345 Molecular weight (g/mol) 40.34 40.28 40.21 40.28 40.2 Percent change in Mol. Weight -0.15 -0.33 -0.16 -0.34 Crystallite Size (nm) 62.04 54.29 86.89 72.4 72.41 Percent change in Crystallite Size -12.49 40.06 16.7 16.71 Table 1 Atomic and structural parameters of control and treated SiC calculated from XRD patterns Figure 5 Percentage change in crystallite size in treated SiC sample as compared with control
  • 17. Particle Size Analysis The particle size result of control and treated samples are presented in Table 2 and Figure 2, and summarized below. • It was found that the average particle size d50, increased up to 2.4% in treated SiC, whereas d99, increased by 1.9% as compared to control (Figure 2). • The graph showed that the percent change in d50, increases and d99, decreases with increase in number of days after treatment. It indicates that, the coarser particles may be fractured and transformed into finer particles after biofield treatment. Table 2: Biofield effect on average particle size (d50) and d99 Particle size Control (day 1) Treated T2 (day 12) Treated T22 (day 85) Treated T3 (day 92) Treated T4 (day 100) d50 (μm) 20.8 20.9 21.3 21.3 21.3 d99(μm) 43.1 43.9 43.3 43.1 43.3 Figure 2: Percentage change in particle size d50 and d99 in biofield treated SiC as compared to control
  • 18. Surface Area Analysis The surface area analysis results of control and treated samples are presented in Figure 3 and summarized below: • The specific surface area was significantly decreased by 23.6%, 71.16% and 23.60% on day 12, day 85 and day 99, respectively as compared to control. • This is possible when sharp corners with irregular shape like hills and valleys on the particle surfaces become rounded. • Additionally, it is also possible that the smaller particles may come together and welded through surface diffusion Figure 3: Percentage change in Surface area in biofield treated SiC as compared to control
  • 19. FT-IR Spectroscopy Analysis FT-IR spectroscopy IR spectrum of control and treated samples are illustrated in Figures 6 and 7, respectively and summarized below: • The absorption peaks observed around 750 cm-1 and 937 cm-1 in treated and control samples, respectively, which were attributed to Si-C bond stretching vibrations. • Moreover, it was observed that absorption peaks at 947 cm-1 (control) was slightly shifted to lower wavenumber at 937 cm-1 (T1) and 925 cm-1 (T2) after treatment, which might be due to reduced bond strength and changed inter- atomic interactions through biofield treatment. Figure 6: IR Spectra of control and treated SiC powder sample T1 on day 60. Figure 7: IR Spectra of control and treated SiC powder sample T2 on day 100.
  • 21. In Summary: • The biofield treatment has altered the particle size with the increment of 2.4% and significantly reduced the specific surface area by 71.16% in SiC powders. • This could be due to change in particle shape and re-welding process caused by high energy milling through biofield treatment. • Furthermore, the crystallite size in treated SiC powder was significantly changed as compared to control. Hence, the biofield treatment may affect the energy band gap of SiC. • The shifting of IR peaks towards lower frequency revealed that silicon–carbon bond stretching might alter through biofield treatment. This indicates that biofield might be acting at atomic level in SiC powder to cause these changes. • Altogether, the study results suggest that biofield treated SiC powder might be useful for high temperature electronic device applications.
  • 23. Acknowledgement: • Authors thankfully acknowledge Dr. Cheng Dong of NLSC, Institute of Physics, and Chinese academy of Sciences for supporting in using PowderX software for analysing X-ray Diffraction results. Full Research Papers and links : • Please visit the below links to read the full research paper with a list of reference links. • http://trivediscience.com/publications/materials-science-publications/effect-of-biofield-treatment-on-structural- and-morphological-properties-of-silicon-carbide/ • http://www.omicsgroup.org/journals/effect-of-biofield-treatment-on-structural-and-morphological-properties-of- silicon-carbide-2168-9806-1000132.pdf
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