MJL3281A (NPN)
MJL1302A (PNP)
Preferred Devices

Complementary NPN−PNP
Silicon Power Bipolar
Transistors
The MJL3281A and ...
MJL3281A (NPN) MJL1302A (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic

Symbol

Min

T...
MJL3281A (NPN) MJL1302A (PNP)
TYPICAL CHARACTERISTICS
NPN MJL3281A
60

50
f T, CURRENT BANDWIDTH PRODUCT (MHz)

f T, CURRE...
MJL3281A (NPN) MJL1302A (PNP)
TYPICAL CHARACTERISTICS
PNP MJL1302A

NPN MJL3281A
45

45
1.5 A

35
30

1A

25

0.5 A

20
15...
MJL3281A (NPN) MJL1302A (PNP)
TYPICAL CHARACTERISTICS

IC , COLLECTOR CURRENT (AMPS)

100

There are two limitations on th...
MJL3281A (NPN) MJL1302A (PNP)
PACKAGE DIMENSIONS

TO−3PBL (TO−264)
CASE 340G−02
ISSUE J

Q
0.25 (0.010)

−B−

M

T B

M

−...
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
Upcoming SlideShare
Loading in …5
×

Mjl3281

697 views
583 views

Published on

Published in: Technology
0 Comments
0 Likes
Statistics
Notes
  • Be the first to comment

  • Be the first to like this

No Downloads
Views
Total views
697
On SlideShare
0
From Embeds
0
Number of Embeds
1
Actions
Shares
0
Downloads
1
Comments
0
Likes
0
Embeds 0
No embeds

No notes for slide

Mjl3281

  1. 1. MJL3281A (NPN) MJL1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL3281A and MJL1302A are PowerBaset power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency • Gain Complementary: Gain Linearity from 100 mA to 7 A High Gain − 60 to 175 hFE = 45 (Min) @ IC = 8 A • Low Harmonic Distortion • High Safe Operation Area − 1 A/100 V @ 1 Second • High fT − 30 MHz Typical • Epoxy Meets UL 94, V−0 @ 0.125 in • ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V http://onsemi.com 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 230 VOLTS 200 WATTS 1 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Collector−Emitter Voltage VCEO 230 Vdc Collector−Base Voltage VCBO 230 VEBO 7 Vdc Collector−Emitter Voltage − 1.5 V VCEX 230 Vdc Collector Current − Continuous − Peak (Note 1) IC 15 25 Adc Base Current − Continuous IB 1.5 Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 200 1.43 Watts W/°C TJ, Tstg − 65 to +150 °C Symbol Max Unit RθJC 0.625 °C/W TO−264 CASE 340G STYLE 2 Vdc Emitter−Base Voltage 3 Rating Operating and Storage Junction Temperature Range MARKING DIAGRAM MJLxxxxA AYYWW 1 BASE xxxx A YY WW THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%. 3 EMITTER 2 COLLECTOR = 3281 or 1302 = Location Code = Year = Work Week ORDERING INFORMATION Package Shipping† MJL3281A TO−264 30 Units/Rail MJL1302A TO−264 30 Units/Rail Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2005 February, 2005 − Rev. 6 1 Publication Order Number: MJL3281A/D
  2. 2. MJL3281A (NPN) MJL1302A (PNP) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 230 − − 7 − − − − 50 − − 5 − − 25 4 1 − − − − 60 60 60 60 60 45 12 125 − − − 115 − 35 175 175 175 175 175 − − − − 3 − 30 − − − 600 Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) VCEO(sus) Emitter−Base Voltage (IE = 100 mAdc, IC = 0) VEBO Collector Cutoff Current (VCB = 230 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 5 Vdc, IC = 0) IEBO Emitter Cutoff Current (VEB = 7 Vdc, IC = 0) Vdc Vdc IEBO µAdc µAdc µAdc SECOND BREAKDOWN IS/b Second Breakdown Collector with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non−repetitive) (VCE = 100 Vdc, t = 1 s (non−repetitive) Adc ON CHARACTERISTICS hFE DC Current Gain (IC = 100 mAdc, VCE = 5 Vdc) (IC = 1 Adc, VCE = 5 Vdc) (IC = 3 Adc, VCE = 5 Vdc) (IC = 5 Adc, VCE = 5 Vdc) (IC = 7 Adc, VCE = 5 Vdc) (IC = 8 Adc, VCE = 5 Vdc) (IC = 15 Adc, VCE = 5 Vdc) Collector−Emitter Saturation Voltage (IC = 10 Adc, IB = 1 Adc) VCE(sat) Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz) fT Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) MHz Cob http://onsemi.com 2 pF
  3. 3. MJL3281A (NPN) MJL1302A (PNP) TYPICAL CHARACTERISTICS NPN MJL3281A 60 50 f T, CURRENT BANDWIDTH PRODUCT (MHz) f T, CURRENT BANDWIDTH PRODUCT (MHz) PNP MJL1302A VCE = 10 V 40 5V 30 20 10 0 TJ = 25°C ftest = 1 MHz 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 VCE = 10 V 50 5V 40 30 20 TJ = 25°C ftest = 1 MHz 10 0 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 1. Typical Current Gain Bandwidth Product Figure 2. Typical Current Gain Bandwidth Product PNP MJL1302A NPN MJL3281A 1000 TJ = 100°C h FE , DC CURRENT GAIN hFE , DC CURRENT GAIN 1000 25°C 100 −25 °C 10 TJ = 100°C 100 −25 °C VCE = 20 V VCE = 20 V 0.1 25°C 1.0 10 IC, COLLECTOR CURRENT (AMPS) 10 100 0.1 Figure 3. DC Current Gain, VCE = 20 V 1.0 10 IC, COLLECTOR CURRENT (AMPS) NPN MJL3281A 1000 h FE , DC CURRENT GAIN 1000 h FE , DC CURRENT GAIN 100 Figure 4. DC Current Gain, VCE = 20 V PNP MJL1302A TJ = 100°C 25°C 100 −25 °C 10 10 TJ = 100°C 100 −25 °C VCE = 5 V VCE = 5 V 0.1 25°C 1.0 10 IC, COLLECTOR CURRENT (AMPS) 10 100 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 5. DC Current Gain, VCE = 5 V Figure 6. DC Current Gain, VCE = 5 V http://onsemi.com 3 100
  4. 4. MJL3281A (NPN) MJL1302A (PNP) TYPICAL CHARACTERISTICS PNP MJL1302A NPN MJL3281A 45 45 1.5 A 35 30 1A 25 0.5 A 20 15 10 5.0 0 5.0 10 15 20 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 1A 30 0.5 A 25 20 15 10 0 25 TJ = 25°C 0 Figure 7. Typical Output Characteristics 5.0 10 15 20 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) PNP MJL1302A NPN MJL3281A 2.5 2.0 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) TJ = 25°C IC/IB = 10 2.5 VBE(sat) 1.5 1.0 0.5 TJ = 25°C IC/IB = 10 2.0 1.5 VBE(sat) 1.0 0.5 VCE(sat) VCE(sat) 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 0 100 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) NPN MJL3281A VBE(on) , BASE−EMITTER VOLTAGE (VOLTS) 10 TJ = 25°C VCE = 5 V (DASHED) 1.0 VCE = 20 V (SOLID) 0.1 100 Figure 10. Typical Saturation Voltages PNP MJL1302A VBE(on) , BASE−EMITTER VOLTAGE (VOLTS) Figure 9. Typical Saturation Voltages 0.1 25 Figure 8. Typical Output Characteristics 3.0 0 IB = 2 A 35 5.0 TJ = 25°C 0 1.5 A 40 IB = 2 A IC , COLLECTOR CURRENT (A) IC , COLLECTOR CURRENT (A) 40 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 10 TJ = 25°C VCE = 5 V (DASHED) 1.0 0.1 VCE = 20 V (SOLID) 0.1 Figure 11. Typical Base−Emitter Voltage 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 12. Typical Base−Emitter Voltage http://onsemi.com 4 100
  5. 5. MJL3281A (NPN) MJL1302A (PNP) TYPICAL CHARACTERISTICS IC , COLLECTOR CURRENT (AMPS) 100 There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TJ(pk) = 150°C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 10 ms 10 50 ms 1 sec 1.0 250 ms 0.1 1.0 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area PNP MJL1302A 10000 Cib Cib C, CAPACITANCE (pF) C, CAPACITANCE (pF) 10000 NPN MJL3281A Cob 1000 1000 Cob TJ = 25°C ftest = 1 MHz 100 0.1 TJ = 25°C ftest = 1 MHz 1.0 10 100 100 0.1 1.0 10 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 14. MJL1302A Typical Capacitance Figure 15. MJL3281A Typical Capacitance http://onsemi.com 5 100
  6. 6. MJL3281A (NPN) MJL1302A (PNP) PACKAGE DIMENSIONS TO−3PBL (TO−264) CASE 340G−02 ISSUE J Q 0.25 (0.010) −B− M T B M −T− C E U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. N A 1 R 2 L 3 P K W F 2 PL G J H D 3 PL 0.25 (0.010) M T B S DIM A B C D E F G H J K L N P Q R U W MILLIMETERS MIN MAX 28.0 29.0 19.3 20.3 4.7 5.3 0.93 1.48 1.9 2.1 2.2 2.4 5.45 BSC 2.6 3.0 0.43 0.78 17.6 18.8 11.2 REF 4.35 REF 2.2 2.6 3.1 3.5 2.25 REF 6.3 REF 2.8 3.2 INCHES MIN MAX 1.102 1.142 0.760 0.800 0.185 0.209 0.037 0.058 0.075 0.083 0.087 0.102 0.215 BSC 0.102 0.118 0.017 0.031 0.693 0.740 0.411 REF 0.172 REF 0.087 0.102 0.122 0.137 0.089 REF 0.248 REF 0.110 0.125 STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER PowerBase is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 For additional information, please contact your local Sales Representative. MJL3281A/D
  7. 7. This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.

×