Component DatabaseComponents for CB-Radios and transmitter/receiver equipment  RF Bipolar Small Signal Transistor     RF F...
President CB-Radio Modification   Technical Documentation for Radio Equipment                                            L...
CB Radio Banner Exchange
RF Bipolar Small Signal TransistorRF Bipolar Transistor                  Max.              Max.    hfe /       Max.    Noi...
15dB@              6dB @2N5770    NPN   15V   50mA    350mW   200MHz             60MHz     TO-92    EBC                   ...
18dB@              5dB@2SC1674   NPN   30V   25mA    250mW   100MHz    600MHz   100MHz    TO-92   ECB                     ...
27dB@              1,7dB@2SC2753   NPN   12V   70mA    300mW   100MHz    5GHz     100MHz    TO-92    BEC                  ...
15dB@              6dB @2SC3663   NPN   12V   50mA    350mW   200MHz             60MHz     TO-92    EBC                   ...
2SK380    NPN   30V   50mA    300mW            400MHz             TO-92   ECB                                             ...
17,5dB@            3dB @BF506    PNP   35V   30mA    300mW   200MHz    300MHz   200Mhz    TO-92    EBC                    ...
11,5dB@              3,3dB@ BFR96TS       NPN     15V      100mA     700mW        800MHz      5GHz     500MHz    SOT-23   ...
Component DatabaseComponents for CB-Radios and transmitter/receiver equipment  RF Bipolar Small Signal Transistor     RF F...
President CB-Radio Modification   Technical Documentation for Radio Equipment                                            L...
CB Radio Banner Exchange
RF FET Small Signal TransistorFET Transistor                     Max.   Max.    Max.              Max.    Noise           ...
N-CH                                               2,5dB @2N5668   J-FET       25V   5mA    360mW            400MHz   100M...
N-CH Dual3N213    Gate                                               TO-72         MOSFET         N-CH Dual3SK39    Gate  ...
N-CH Dual                                            19dB@     1,2dB@3SK198   Gate        13V     50mA   200mW   800MHz   ...
N-CH Dual                                             22,5dB@            1,5dB@3SK291   Gate        12,5V   30mA    150mW ...
N-CH DualBF905     Gate          MOSFET          N-CH DualBF907     Gate          MOSFET          N-CH Dual               ...
N-CH Dual                                                          20dB@                1,8dB@ BF995         Gate        2...
RF Power Transistor  123          123       123           123            123 TO-92L       TO-202    TO-202N       TO-126  ...
2SC1590    5W     10dB     12,5V   136-174MHz   FM          TO-220   BEC2SC1591    14W    7,5dB    12,5V   136-174MHz   FM...
2SC2029    6W                       30MHz                TO-220   BCE2SC2036A   1,4W                                      ...
2SC3021   7W     7,7dB    12,5V   520MHz       FM          T-31E2SC3022   18W    4,8dB    12,5V   520MHz       FM         ...
MRF477   40W   15dB      13,5V      1,5-30MHz         FM/AM/SSB    TO-220   BECMRF479   15W   10dB      13,5V      1,5-30M...
2SC1307                                 Silicon NPN Transistor                                 Final RF Power OutputThe 2S...
Electrical Characteristics: (TC = +25°C unless otherwise specified)             Parameter              Symbol         Test...
2SC1590                                 Silicon NPN Transistor                                    RF Power OutputThe 2SC15...
Electrical Characteristics: (TC = +25°C unless otherwise specified)             Parameter              Symbol             ...
2SC1591                                 Silicon NPN Transistor                                    RF Power OutputThe 2SC15...
Electrical Characteristics: (TC = +25°C unless otherwise specified)             Parameter              Symbol           Te...
2SC1909                                        Silicon NPN Transistor                                        Final RF Powe...
Output Capacitance     Cob      VCB = 10V, f = 1MHz                25    -   -Power Output           PO       VCC = 12V, P...
2SC1945                                 Silicon NPN Transistor                                 Final RF Power OutputThe 2S...
Electrical Characteristics: (TC = +25°C unless otherwise specified)             Parameter              Symbol         Test...
2SC1946               Silicon NPN Transistor   Final RF Power Output in VHF band mobile radio                     applicat...
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 100mA, RBE = Infinity         17    -     -    VEmitter-Base Breakdown V...
2SC1946A               Silicon NPN Transistor   Final RF Power Output in VHF band mobile radio                     applica...
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 100mA, RBE = Infinity         17    -     -    VEmitter-Base Breakdown V...
2SC1957                                 Silicon NPN Transistor                                 Final RF Power OutputThe 2S...
Thermal Resistance, Junction-to-Ambient, RthJA                       73.5°C/WElectrical Characteristics: (TC = +25°C unles...
2SC1969                                 Silicon NPN Transistor                                 Final RF Power OutputThe 2S...
Thermal Resistance, Junction-to-Ambient, RthJA                      73.5°C/WElectrical Characteristics: (TC = +25°C unless...
CB Radio Banner Exchange
2SC1970                                 Silicon NPN Transistor                                    RF Power OutputThe 2SC19...
Collector-Base Breakdown Voltage   V(BR)CBO IC = 5mA, IE = 0                          40    -     -    VCollector-Emitter ...
2SC1971                                 Silicon NPN Transistor                                    RF Power OutputThe 2SC19...
Electrical Characteristics: (TC = +25°C unless otherwise specified)             Parameter              Symbol             ...
2SC1972                                 Silicon NPN Transistor                                    RF Power OutputThe 2SC19...
Electrical Characteristics: (TC = +25°C unless otherwise specified)             Parameter              Symbol             ...
2SC1973                                 Silicon NPN Transistor                                       RF AmplifierThe 2SC19...
2SC2036A                                 Audio Amplifier, Driver                                                          ...
Collector Output Capacitance   Cob      VCB = 10V, IE = 0, f = 1MHz   -   14   -   pF                                     ...
2SC2053                                 Silicon NPN Transistor                                       RF AmplifierThe 2SC20...
Emitter Cutoff Current             IEBO     VEB = 3V, IC = 0                    -    -    20    µADC Forward Current Gain ...
2SC2055                                 Silicon NPN Transistor                                       RF AmplifierThe 2SC20...
Emitter Cutoff Current             IEBO     VEB = 3V, IC = 0                    -   -     30    µADC Forward Current Gain ...
2SC2078                               Silicon NPN Transistor                               Final RF Power OutputThe 2SC207...
Collector-Emitter Saturation Voltage   VCE(sat) IC = 1A, IB = 0.1A                 -    0.15 0.60   VBase-Emitter Saturati...
2SC2086                                 Silicon NPN Transistor                                       RF AmplifierThe 2SC20...
Emitter Cutoff Current             IEBO     VEB = 3V, IC = 0                  -   -     100 µADC Forward Current Gain     ...
2SC2092                               Silicon NPN Transistor                               Final RF Power OutputThe 2SC209...
Collector-Emitter Saturation Voltage   VCE(sat)   IC = 1A, IB = 0.1A                  -    0.15 0.60   VBase-Emitter Satur...
2SC2094               Silicon NPN Transistor   Final RF Power Output in VHF band mobile radio                     applicat...
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 100mA, RBE = Infinity         17    -     -    VEmitter-Base Breakdown V...
2SC2166                                 Silicon NPN Transistor                                 Final RF Power OutputThe 2S...
Collector-Base Breakdown Voltage   V(BR)CBO IC = 1mA, IE = 0                       75    -     -    VCollector-Emitter Bre...
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
Components database  for cb radios and transmitterreceiver equipment
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Components database for cb radios and transmitterreceiver equipment

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Components database for cb radios and transmitterreceiver equipment

  1. 1. Component DatabaseComponents for CB-Radios and transmitter/receiver equipment RF Bipolar Small Signal Transistor RF FET Small Signal Transistor RF Power Transistor Shortform Transistor Catalogue Integrated Circuits Variable capacitance diode Albrecht Radio Equipment Scanner Documentation
  2. 2. President CB-Radio Modification Technical Documentation for Radio Equipment LINK`SNTE Electronics Inc, Electronic Cross Reference DatabaseECG Cross ReferenceFujitsu SemiconductorHewlett-Packard SemiconductorKTC Semiconductor (Corea)Motorola RF-ComponentsNational SemiconductorNEC SemiconductorNew Japan Radio Co., Ltd.Nippon Precision CircuitsPhilips ComponentsST KomponenterSanyo SemiconductorSiemens SemiconductorTexas Instruments SemiconductorToshiba ComponentsToshiba Semiconductor - PDF Search www.dxzone.com Amateur Radio Search Engine
  3. 3. CB Radio Banner Exchange
  4. 4. RF Bipolar Small Signal TransistorRF Bipolar Transistor Max. Max. hfe / Max. Noise PinTransistor Type Max. Ie Case Vce Diss. Gain Freq. Figure 123 15dB@ 6dB @2N918 NPN 15V 50mA 350mW 200MHz 600MHz 60MHz TO-72 EBC 12,5dB@ 4,5dB @2N2857 NPN 15V 40mA 200mW 450MHz 1,6GHz 450MHz TO-72 1,5dB@ 6,5dB @2N3663 NPN 12V 30mA 350mW 200MHz 700MHz 60MHz TO-92 BCE 5dB @2N3904 NPN 40V 200mA 625mW 300MHz 15,7kHz TO-92 EBC 5dB@2N4124 NPN 25V 200mA 350mW 120 300MHz 15,7kHz TO-92 EBC 17dB@ 3dB @2N4957 PNP 30V 30mA 200mW 450MHz 1,6GHz 450MHz TO-72 14dB@ 2,5dB @2N5031 NPN 10V 20mA 200mW 450MHz 1,6GHz 450MHz TO-72 15dB@ 4,5dB @2N5179 NPN 10V 50mA 200mW 200MHz 1,4GHz 200MHz TO-72
  5. 5. 15dB@ 6dB @2N5770 NPN 15V 50mA 350mW 200MHz 60MHz TO-92 EBC 15dB@ 4,5dB @2N6304 NPN 15V 50mA 200mW 450MHz 1,8GHz 450MHz TO-722SC372 NPN 60V 150mA 400mW 200MHz TO-92 29dB@2SC380 NPN 30V 50mA 300mW 10,7MHz 100MHz TO-92 ECB 33dB@2SC383 NPN 45V 50mA 300mW 45MHz 300MHz TO-92 ECB 33dB@2SC388 NPN 25V 50mA 300mW 45MHz 300MHz TO-92 ECB2SC394 NPN 25 100mA 200MHz TO-92 35dB@2SC454 NPN 30V 100mA 200mW 455kHz 230MHz TO-92 ECB2SC458 NPN 30V 100mA 200mW 230MHz TO-92 ECB 29dB@ 5dB @2SC460 NPN 30V 100mA 200mW 10,7MHz 230MHz 1Mhz TO-92 ECB 17dB@2SC461 NPN 30V 100mA 200mW 100MHz 230MHz TO-92 ECB 20dB@ 3,5dB@2SC535 NPN 30V 20mA 100mW 100MHz 450MHz 100MHz TO-92 ECB2SC536 NPN 40V 100mA 180MHz TO-92 ECB2SC710 NPN 30V 30mA 200mW 200MHz TO-922SC711 NPN 50V 30mA 200mW 200MHz TO-922SC784 NPN 40V 20mA 500MHz TO-92 ECB2SC829 NPN 45V 50mA 250mW 70 230MHz TO-92 ECB 3,5dB@2SC941 NPN 30V 100mA 400mW 50 120MHz 1MHz TO-92 ECB2SC945 NPN 60V 100mA 250mW 250MHz TO-92 ECB 2dB @2SC1009 NPN 20V 50mA 150mW 100 250MHz 1MHz SOT-23 20dB@ 3,3dB@2SC1047 NPN 20V 20mA 400mW 100MHz 450MHz 100MHz TO-92 ECB 17dB@ 5,5dB @2SC1342 NPN 20V 30mA 100mW 100MHz 320MHz 100MHz TO-92 ECB
  6. 6. 18dB@ 5dB@2SC1674 NPN 30V 25mA 250mW 100MHz 600MHz 100MHz TO-92 ECB 4dB @2SC1675 NPN 30V 30mA 250mW 40 150MHz 1MHz TO-92 ECB2SC1730 NPN 30V 50mA 250mW 1,1GHz TO-92 1dB@2SC1815 NPN 40V 100mA 300mW 70 200MHz 1kHz TO-92 ECB2SC1856 NPN 20V 20mA 250mW 200MHz TO-92 33dB@2SC1906 NPN 20V 50mA 300mW 45MHz 1GHz TO-92 ECB2SC1907 NPN 20V 50mA 300mW 40 1,1GHz TO-92 ECB 18dB@ 2,5dB@2SC1923 NPN 30V 20mA 100mW 100MHz 550MHz 100MHz TO-92 ECB2SC2026 NPN 15V 50mA 2.2GHz TO-92 BEC2SC2037 NPN 15V 50mA TO-922SC2120 NPN 30V 800mA 600mW 100 120MHz TO-92 ECB 29dB@2SC2216 NPN 45V 50mA 300mW 45MHz 300MHz TO-92 BEC2SC2347 NPN 15V 50mA 250mW 20 650MHz TO-92 ECB2SC2349 NPN 15V 50mA 250mW 600MHz TO-92 ECB2SC2407 NPN 35V 150mA 600mW 500MHz TO-922SC2471 NPN 30V 50mA 310mW 20 2GHz TO-92 ECB 2,5dB @2SC2498 NPN 20V 50mA 300mW 80 3,5GHz 500MHz TO-92 BEC 20dB@ 3,8dB @2SC2512 NPN 20V 50mA 300mW 200MHz 900MHz 200MHz TO-92 BEC 18dB@ 2dB@2SC2644 NPN 12V 120mA 500mW 100MHz 4GHz 100MHz TO-92 BEC 18dB@ 2,5dB@2SC2668 NPN 30V 20mA 100mW 100MHz 550MHz 100MHz MINI ECB 30dB@2SC2669 NPN 30V 50mA 200mW 10,7MHz 100MHz MINI ECB 28dB@2SC2717 NPN 25V 50mA 300mW 45MHz 300MHz TO-92 BEC2SC2724 NPN 30V 25mA 250mW 600MHz TO-92 ECB
  7. 7. 27dB@ 1,7dB@2SC2753 NPN 12V 70mA 300mW 100MHz 5GHz 100MHz TO-92 BEC 22dB@ 3dB@2SC2786 NPN 20V 20mA 250mW 100MHz 600MHz 100MHz MINI ECB 2dB @2SC2787 NPN 30V 30mA 250mW 90 250MHz 1MHz MINI ECB 25dB@ 3dB@2SC2814 NPN 20V 30mA 150mW 100MHz 200MHz 100MHz SOT-23 25dB@ 3dB@2SC2839 NPN 20V 30mA 150mW 100MHz 200MHz 100MHz MINI ECB 15dB@ 4dB@2SC2996 NPN 30V 50mA 150mW 100MHz 100MHz 150 SOT-23 28dB@ 2,2dB@2SC2999 NPN 20V 30mA 150mW 100MHz 450MHz 100MHz MINI ECB 25dB@ 3dB@2SC3000 NPN 20V 30mA 250mW 100MHz 200MHz 100MHz TO-92 ECB 27dB@ 2,3dB @2SC3011 NPN 7V 30mA 150mW 100MHz 6,5MHz 1GHz SOT-23 24dB@ 1,7dB @2SC3099 NPN 20V 30mA 150mW 100MHz 4GHz 100MHz SOT-23 10,5dB@ 2,2dB@2SC3127 NPN 12V 50mA 150mW 900MHz 4,5GHz 900MHz SOT-23 10,5dB@ 2,2dB@2SC3128 NPN 12V 50mA 350mW 900MHz 4,5GHz 900MHz TO-92 BEC 28dB@ 2,2dB@2SC3142 NPN 20V 30mA 150mW 100MHz 450MHz 100MHz SOT-232SC3195 NPN 30V 20mA 100mW 550MHz MINI ECB 9,5dB@ 1,1dB@2SC3355 NPN 12V 100mA 600mW 1GHz 6,5GHz 1GHz TO-92 BEC 11dB@ 1,1dB @2SC3356 NPN 12V 100mA 200mW 1GHz 7GHz 1GHz SOT-23 28dB@ 1,7dB @2SC3429 NPN 12V 70mA 150mW 100MHz 5GHz 100MHz SOT-23 10,5dB@ 2,2dB@2SC3510 NPN 12V 50mA 600mW 900MHz 4,5GHz 900MHz TO-92 BEC 10,5dB@ 1,6dB@2SC3512 NPN 10V 50mA 600mW 900MHz 6GHz 900MHz TO-92 BEC 13dB@ 1,2dB@2SC3582 NPN 10V 65mA 600mW 1GHz 8GHz 1GHz TO-92 BEC 27dB@ 1,1dB@2SC3605 NPN 12V 80mA 600mW 100MHz 6,5GHz 100MHz TO-92 BEC 28dB@ 1dB @2SC3606 NPN 12V 80mA 150mW 100MHz 5GHz 500MHz SOT-23
  8. 8. 15dB@ 6dB @2SC3663 NPN 12V 50mA 350mW 200MHz 60MHz TO-92 EBC 2dB@2SC4173 NPN 30V 50mA 150mW 100 250MHz 1MHz SOT-232SC4308 NPN 20V 300mA 600mW 50 2,5GHz TO-92 BEC 28dB@ 1dB @2SC4317 NPN 10V 40mA 150mW 100MHz 7GHz 1GHz SOT-23 28dB@ 1dB @2SC4321 NPN 10V 40mA 150mW 100MHz 7GHz 1GHz SOT-23 24dB@ 1,4dB @2SC4322 NPN 10V 15mA 150mW 100MHz 7GHz 1GHz SOT-23 25dB@ 3dB @2SC4399 NPN 20V 30mA 150mW 100MHz 200MHz 100MHz SOT-23 26dB@2SC4433 NPN 18V 50mA 300mW 100MHz 750MHz MINI ECB 10dB@ 7dB @2SC4628 NPN 20V 20mA 200mW 800MHz 1GHz 100MHz TO-92 ECB 11,5dB@ 1,2dB @2SC4629 NPN 9V 50mA 600mW 900MHz 8GHz 900MHz TO-92 ECB 10dB@ 1,8dB @2SC4874 NPN 12V 50mA 600mW 900MHz 5,8GHz 900MHz TO-92 ECB 11,5dB@ 1,3dB @2SC4875 NPN 9V 50mA 450mW 900MHz 8,5GHz 900MHz TO-92 ECB 24dB@ 1dB @2SC5064 NPN 12V 30mA 150mW 100MHz 5GHz 500MHz SOT-23 26dB@ 1dB @2SC5084 NPN 12V 80mA 150mW 100MHz 5GHz 500MHz SOT-23 16,5dB@ 1dB @2SC5085 NPN 12V 80mA 150mW 500MHz 5GHz 500MHz SOT-23 28dB@ 1,1dB @2SC5089 NPN 10V 40mA 150mW 100MHz 7GHz 1GHz SOT-23 23dB@ 1,4dB @2SC5094 NPN 10V 15mA 150mW 100MHz 7GHz 1GHz SOT-23 21dB@2SC5106 NPN 10V 30mA 150mW 100MHz 4GHz SOT-23 21dB@2SC5109 NPN 10V 60mA 150mW 100MHz 3GHz SOT-23 28dB@ 1,1dB @2SC5254 NPN 7V 40mA 150mW 100MHz 9GHz 1GHz SOT-23 22dB@ 1,3dB @2SC5259 NPN 7V 15mA 150mW 100MHz 9GHz 1GHz SOT-23 1,5dB@ 6,5dB @2SC5570 NPN 15V 50mA 350mW 200MHz 700MHz 60MHz TO-92 EBC
  9. 9. 2SK380 NPN 30V 50mA 300mW 400MHz TO-92 ECB 2,5dB@2SK1923 NPN 30V 20mA 100mW 550MHz 100MHz TO-92 ECBBF115 NPN 30V 25mA 125mW 45 250MHz TO-72BF167 NPN 30V 25mA 125mW 26 350MHz TO-92 2,6dB @BF173 NPN 25V 25mA 200mW 40 700MHz 36MHz TO-72 BEC*BF180 NPN 20V 20mA 150mW 15 675MHz TO-72BF184 NPN 20V 30mA 150mW 75 300MHz TO-72BF185 NPN 20V 30mA 150mW 35 220MHz TO-72BF198 NPN 30V 25mA 500mW 400MHz 3dB @ TO-92 6dB @BF199 NPN 25V 25mA 300mW 40 550MHz 45MHz TO-92 CEBBF200 NPN 20V 20mA 150mW 15 650MHz TO-72BF224 NPN 30V 50mA 250mW 30 450MHz TO-92 CEB 4dB@BF240 NPN 40V 25mA 300mW 67 150MHz 60MHz TO-92 CEBBF241 NPN 40V 25mA TO-92 CEBBF254 NPN 20V 30mA 200mW 200MHz TO-92BF255 NPN 20V 30mA 300mW 200MHz TO-92 CEB 2dB @BF314 NPN 30V 25mA 300mW 30 600MHz 200MHz CBEBF324 PNP 30V 25mA 300mW 25 450MHz TO-92 CBEBF370 NPN 15V 200mA 500mW 40 500MHz TO-92 CBE 3dB@BF414 NPN 30V 25mA 300mW 80 400MHz 100MHz TO-92 EBCBF494 NPN 20V 30mA 300mW 67 120MHz 4dB@ TO-92 CEBBF495 NPN 20V 30mA 300mW 35 120MHz 4dB@ TO-92 CEB 30dB@ 2,5dB @BF496 NPN 20V 20mA 300mW 100MHz 550MHz 200Mhz TO-92
  10. 10. 17,5dB@ 3dB @BF506 PNP 35V 30mA 300mW 200MHz 300MHz 200Mhz TO-92 EBC 16dB@ 3dB @BF689K NPN 15V 25mA 360mW 200MHz 1,8GHz 200Mhz TO-92 20dB@ 4,5dB @BF748 NPN 20V 50mA 500mW 100MHz 1,2GHz 100Mhz TO-92 11dB@ 2,7dB @BF751 NPN 14V 35mA 600mW 1000MHz 6,5GHz 1000Mhz TO-92 13dB@BF763 NPN 15V 25mA 360mW 800MHz 1,8GHz TO-92 15dB@ 1,8dB @BF775 NPN 15V 30mA 280mW 900MHz 5GHz 900MHz SOT-23 3dB @BF799W NPN 20V 35mA 280mW 800MHz 100MHz SOT-23 1,7dB@BF840 NPN 40V 25mA 280mW 65 380MHz 100kHz SOT-23 17,5dB@ 5dB @BF926 NPN 20V 25mA 250mW 200MHz 350MHz 200Mhz TO-92 3dB@BF959 NPN 20V 100mA 500mW 40 600MHz 200MHz TO-92 19,5dB@ 2,2dB @BFR90 NPN 15V 30mA 300mW 500MHz 5GHz 500MHz SOT-37 16dB@ 2,8dB @BFR90A NPN 15V 30mA 300mW 800MHz 6GHz 800MHz SOT-37 18dB@ 1,9dB @BFR91 NPN 12V 50mA 300mW 500MHz 5GHz 500MHz SOT-37 14dB@ 1,6dB @BFR91A NPN 12V 50mA 300mW 800MHz 6GHz 800MHz SOT-37 19,5dB@ 2,2dB @BFR92 NPN 15V 30mA 200mW 500MHz 5GHz 500MHz SOT-23 16dB@ 1,8dB @BFR92A NPN 15V 30mA 200mW 800MHz 6GHz 800MHz SOT-23BFR92L NPN 15V 35mA 350mW 3,4GHz SOT-23 18dB@ 1,9dB@BFR93 NPN 12V 40mA 200mW 500MHz 5GHz 500MHz SOT-23 14dB@ 1,6dB@BFR93A NPN 12V 40mA 200mW 800MHz 6GHz 800MHz SOT-23 2,5dB@BFR93L NPN 12V 35mA 350mW 3GHz 30MHz SOT-23 14,5dB@ 2dB @BFR96 NPN 15V 100mA 500mW 500MHz 4,5GHz 500MHz SOT-37 16dB@ 2,3dB@BFR96T NPN 15V 75mA 500mW 500MHz 5GHz 500MHz SOT-23
  11. 11. 11,5dB@ 3,3dB@ BFR96TS NPN 15V 100mA 700mW 800MHz 5GHz 500MHz SOT-23 1,1dB@ BFR520 NPN 15V 70mA 300mW 60 9GHz 900MHz SOT-23 21dB@ 2,5dB @ BFY90 NPN 15V 50mA 200mW 200MHz 1,7GHz 200MHz TO-72 EBC* 18dB@ 2,5dB@ KTC3194 NPN 30V 20mA 625mW 100MHz 550MHz 100MHz MINI ECB 18dB@ 2,5dB@ KTC3195 NPN 30V 20mA 400mW 100MHz 550MHz 100MHz MINI ECB 18dB@ 2,5dB@ KTC3880 NPN 30V 20mA 150mW 100MHz 550MHz 100MHz SOT-23 14dB@ 4,5dB @ MPS536 PNP 10V 30mA 625mW 500MHz 5GHz 500MHz TO-92 14dB@ 2dB @ MPS571 NPN 10V 80mA 625mW 500MHz 5GHz 500MHz TO-92 12dB@ 2,5dB @ MPS901 NPN 15V 30mA 625mW 900MHz 5GHz 900MHz TO-92 16,5dB @ 1,7dB @ MPS911 NPN 12V 40mA 625mW 500MHz 7GHz 500MHz TO-92 10dB@ MPS3866 NPN 30V 400mA 625mW 400MHz 800MHz TO-92* = Shield lead connected to case CB Radio Banner Exchange
  12. 12. Component DatabaseComponents for CB-Radios and transmitter/receiver equipment RF Bipolar Small Signal Transistor RF FET Small Signal Transistor RF Power Transistor Shortform Transistor Catalogue Integrated Circuits Variable capacitance diode Albrecht Radio Equipment Scanner Documentation
  13. 13. President CB-Radio Modification Technical Documentation for Radio Equipment LINK`SNTE Electronics Inc, Electronic Cross Reference DatabaseECG Cross ReferenceFujitsu SemiconductorHewlett-Packard SemiconductorKTC Semiconductor (Corea)Motorola RF-ComponentsNational SemiconductorNEC SemiconductorNew Japan Radio Co., Ltd.Nippon Precision CircuitsPhilips ComponentsST KomponenterSanyo SemiconductorSiemens SemiconductorTexas Instruments SemiconductorToshiba ComponentsToshiba Semiconductor - PDF Search www.dxzone.com Amateur Radio Search Engine
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  15. 15. RF FET Small Signal TransistorFET Transistor Max. Max. Max. Max. Noise PinTransistor Type Gain Case Vds Id Diss. Freq. Figure 1234 N-CH 3dB @2N3819 J-FET 25V 10mA 350mW 400MHz TO-92 SGD N-CH 18dB @ 2dB @2N4416 J-FET 30V 15mA 300mW 100MHz 450MHz 100MHz TO-72 SDG* N-CH 18dB @ 2dB @2N4416A J-FET 35V 15mA 300mW 100MHz 400MHz 100MHz TO-72 SDG* N-CH2N5245 J-FET 30V 18mA 360mW TO-92 N-CH2N5248 J-FET 30V 20mA 200mW TO-92 SGD N-CH 16dB @ 3dB @2N5484 J-FET 25V 5mA 310mW 100MHz 200MHz 100MHz TO-92 DSG N-CH 18dB @ 2dB @2N5485 J-FET 25V 10mA 310mW 100MHz 400MHz 100MHz TO-92 DSG N-CH 18dB @ 2dB @2N5486 J-FET 25V 20mA 350mW 100MHz 400MHz 100MHz TO-92 DSG
  16. 16. N-CH 2,5dB @2N5668 J-FET 25V 5mA 360mW 400MHz 100MHz TO-92 N-CH 2,5dB @2N5669 J-FET 25V 10mA 360mW 400MHz 100MHz TO-92 N-CH 2,5dB @2N5670 J-FET 25V 20mA 360mW 400MHz 100MHz TO-92 N-CH2SK19 J-FET 18V 10mA 200mW TO-92 DSG N-CH2SK44 J-FET MINI N-CH2SK49 J-FET TO92 N-CH 1,5dB @2SK125 J-FET 25V 30mA 200mW 100MHz TO-92 N-CH 18dB @ 2,5dB @2SK161 J-FET 18V 10mA 200mW 100MHz 100MHz MINI DSG N-CH 24dB @ 1,8dB @2SK192 J-FET 18V 10mA 200mW 100MHz 100MHz MINI DSG N-CH 28dB @ 1,7dB @2SK241 J-FET 20V 30mA 200mW 100MHz 100MHz MINI DSG N-CH 27dB @ 1,8dB @2SK544 J-FET 20V 30mA 300mW 100MHz 100MHz DSG N-CH2SK709 J-FET 20V 10mA 300mW TO-92 DSG N-CH2SK710 J-FET 20V 10mA 200mW MINI DGS N-CH Dual 4,5dB @3N200 Gate 20V 50mA 330mW 500MHz 400MHz TO-72 MOSFET N-CH Dual3N201 Gate 25V 50mA TO-72 MOSFET N-CH Dual 4,5dB @3N202 Gate 25V 50mA 360mW 200MHz 200MHz TO-72 MOSFET N-CH Dual3N204 Gate TO-72 MOSFET N-CH Dual3N211 Gate 25V 50mA 360mW TO-72 MOSFET N-CH Dual3N212 Gate TO-72 MOSFET
  17. 17. N-CH Dual3N213 Gate TO-72 MOSFET N-CH Dual3SK39 Gate 20V 25mA TO-72 MOSFET N-CH Dual3SK40 Gate 15V 25mA 250mW TO-72 MOSFET N-CH Dual3SK45 Gate TO-72 MOSFET N-CH Dual3SK48 Gate TO-72 MOSFET N-CH Dual3SK51 Gate 20V 35mA TO-72 MOSFET N-CH Dual3SK59 Gate 20V 35mA TO-72 MOSFET N-CH Dual3SK72 Gate TO-72 MOSFET N-CH Dual3SK73 Gate 20V 3mA TO-72 MOSFET N-CH Dual3SK74 Gate 20V 7mA 200mW SOT-37 MOSFET N-CH Dual3SK75 Gate TO-72 MOSFET N-CH Dual3SK81 Gate 20V 5mA MOSFET N-CH Dual3SK88 Gate SOT-37 MOSFET N-CH Dual3SK97 Gate MOSFET N-CH Dual 25dB@ 1,4dB@3SK126 Gate 15V 30mA 150mW 200MHz 200MHz SOT-143 SDGG MOSFET N-CH Dual3SK173 Gate TO-72 MOSFET N-CH Dual 28dB@ 1,8dB@3SK180 Gate 15V 30mA 200mW 100MHz 100MHz SOT-143 SDGG MOSFET
  18. 18. N-CH Dual 19dB@ 1,2dB@3SK198 Gate 13V 50mA 200mW 800MHz 800MHz SOT-143 SDGG MOSFET N-CH Dual 19,5dB@ 1,9dB@3SK199 Gate 13,5V 30mA 150mW 800MHz 800MHz SOT-143 SDGG MOSFET N-CH Dual 19,5dB@ 1,9dB@3SK207 Gate 13,5V 30mA 150mW 800MHz 800MHz SOT-143 SDGG MOSFET N-CH Dual 22dB@ 2dB@3SK225 Gate 13,5V 30mA 150mW 500MHz 500MHz SOT-143 SDGG MOSFET N-CH Dual 27dB@ 1,1dB@3SK226 Gate 13,5V 30mA 150mW 200MHz 200MHz SOT-143 SDGG MOSFET N-CH Dual 20dB@ 1,5dB@3SK232 Gate 13,5V 30mA 150mW 800MHz 800MHz SOT-143 SDGG MOSFET N-CH Dual 20,5dB@ 1dB@3SK240 Gate 9V 1mA 150mW 800MHz 800MHz SOT-143 SDGG MOSFET N-CH Dual 20dB@ 1,5dB@3SK249 Gate 12,5V 30mA 150mW 800MHz 800MHz SOT-143 SDGG MOSFET N-CH Dual 19,5dB@ 1,9dB@3SK256 Gate 13,5V 30mA 150mW 800MHz 800MHz SOT-143 SDGG MOSFET N-CH Dual 22dB@ 2dB@3SK257 Gate 13,5V 30mA 100mW 800MHz 800MHz SOT-143 SDGG MOSFET N-CH Dual 19dB@ 2,6dB@3SK259 Gate 13,5V 30mA 100mW 800MHz 800MHz SOT-143 SDGG MOSFET N-CH Dual 24,5dB@ 3,3dB@3SK260 Gate 13,5V 30mA 100mW 200MHz 200MHz SOT-143 SDGG MOSFET N-CH Dual 21dB@ 1,1dB@3SK263 Gate 15V 30mA 200mW 200MHz 200MHz SOT-143 SDGG MOSFET N-CH Dual 23dB@ 1,1dB@3SK264 Gate 15V 30mA 200mW 200MHz 200MHz SOT-143 SDGG MOSFET N-CH Dual 26dB@ 1,1dB@3SK265 Gate 15V 30mA 200mW 200MHz 200MHz SOT-143 SDGG MOSFET N-CH Dual 20,5dB@ 1dB@3SK274 Gate 9V 1mA 100mW 800MHz 800MHz SOT-143 SDGG MOSFET
  19. 19. N-CH Dual 22,5dB@ 1,5dB@3SK291 Gate 12,5V 30mA 150mW 800MHz 800MHz SOT-143 SDGG MOSFET N-CH Dual 26dB@ 1,4dB@3SK292 Gate 12,5V 30mA 150mW 500MHz 500MHz SOT-143 SDGG MOSFET N-CH Dual 22,5dB@ 1,5dB@3SK293 Gate 12,5V 30mA 100mW 500MHz 500MHz SOT-143 SDGG MOSFET N-CH Dual 26dB@ 1,4dB@3SK294 Gate 12,5V 30mA 100mW 500MHz 500MHz SOT-143 SDGG MOSFET N-CH Dual 15dB@ 1,4dB@3SK320 Gate 6V 1mA 100mW 2GHz 2GHz SOT-143 SDGG MOSFET N-CH Dual 6dB @40673 Gate 20V 50mA 330mW 400MHz 200MHz TO-72 MOSFET N-CH Dual40823 Gate 20V 50mA TO-72 MOSFET N-CH Dual 14dB @ 3dB @40841 Gate 20V 50mA 50MHz 50MHz TO-72 MOSFET N-CHBF244 J-FET 30V 50mA 500mW TO-92 N-CH 1,5dB @BF245A J-FET 30V 6,5mA 300mW 700MHz 100MHz TO-92 DSG N-CH 1,5dB @BF245B J-FET 30V 615mA 300mW 700MHz 100MHz TO-92 DSG N-CH 1,5dB @BF245C J-FET 30V 25mA 300mW 700MHz 100MHz TO-92 DSG N-CHBF256 J-FET 30V 10mA 300mW 1GHz TO-92 GSD N-CH 1,5dB @BF410A J-FET 20V 30mA 300mW 100MHz TO-92 GSD N-CH 1,5dB @BF410B J-FET 20V 30mA 300mW 100MHz TO-92 GSD N-CH 1,5dB @BF410C J-FET 20V 30mA 300mW 100MHz TO-92 GSD N-CH 1,5dB @BF410D J-FET 20V 30mA 300mW 100MHz TO-92 GSD N-CH 22dB@ 1dB @BF543 MOS-FET 20V 30mA 200mW 200MHz 300MHz 200MHz SOT-23 N-CH DualBF900 Gate SOT-37 MOSFET
  20. 20. N-CH DualBF905 Gate MOSFET N-CH DualBF907 Gate MOSFET N-CH Dual 0,6dB @BF908WR Gate 12V 40mA 300mW 200MHz SOT-143 MOSFET N-CH DualBF910 Gate 20V 50mA 300mW MOSFET N-CH DualBF960 Gate 20V 20mA 225mW 800MHz SOT-37 MOSFET N-CH Dual 20dB@ 1,8dB@BF961 Gate 20V 30mA 200mW 200MHz 2GHz 200MHz TO-50 DSGG MOSFET N-CH Dual 25dB@ 1dB@BF964S Gate 20V 30mA 200mW 200MHz 2GHz 200MHz TO-50 DSGG MOSFET N-CH Dual 25dB@ 1dB@BF966S Gate 20V 30mA 200mW 200MHz 2GHz 200MHz TO-50 DSGG MOSFET N-CH DualBF981 Gate 20V 20mA MOSFET N-CH DualBF982 Gate 20V 40mA 200MHz MOSFET N-CH DualBF988 Gate 12V 30mA 800MHz MOSFET N-CH Dual 1,6dB @BF989 Gate 20V 20mA 200mW 200MHz SOT-143 MOSFET N-CH Dual 2dB@BF990A Gate 18V 30mA 200mW 800MHz SOT-143 MOSFET N-CH Dual 29dB@ 0,7dB@BF991 Gate 20V 30mA 200mW 100MHz 100MHz SOT-143 MOSFET N-CH Dual 1,2dB@BF992 Gate 20V 40mA 200mW 200MHz SOT-143 MOSFET N-CH Dual 25dB@ 1dB@BF994 Gate 20V 30mA 200mW 200MHz 200MHz SOT-143 MOSFET N-CH Dual 25dB@ 1dB@BF994S Gate 20V 30mA 200mW 200MHz 2GHz 200MHz SOT-143 SDGG MOSFET
  21. 21. N-CH Dual 20dB@ 1,8dB@ BF995 Gate 20V 30mA 200mW 200MHz 200MHz SOT-143 SDGG MOSFET N-CH Dual 25dB@ 1dB@ BF996 Gate 20V 30mA 200mW 200MHz 200MHz SOT-143 MOSFET N-CH Dual 25dB@ 1dB@ BF996S Gate 20V 30mA 200mW 200MHz 2GHz 200MHz SOT-143 SDGG MOSFET N-CH Dual 25dB@ 1dB@ BF997 Gate 20V 30mA 200mW 200MHz 1GHz 200MHz SOT-143 MOSFET N-CH Dual 28dB@ 1dB@ BF961 Gate 20V 30mA 200mW 200MHz 2GHz 200MHz SOT-143 SDGG MOSFET N-CH 25dB@ 1dB @ BF543 MOS-FET 20V 30mA 200mW 200MHz 300MHz 200MHz SOT-23 N-CH Dual 2dB@ BF1100 Gate 14V 30mA 280mW 800MHz SOT-143 MOSFET N-CH Dual MFE201 Gate TO-72 MOSFET N-CH 4dB @ MPF102 J-FET 25V 20mA 310mW 200MHz 400MHz TO-92 N-CH 4dB @ MPF106 J-FET 25V 30mA 310mW 400MHz 200MHz TO-92 N-CH Dual 6dB @ SK3050 Gate 20V 50mA 330mW 400MHz 200MHz TO-72 MOSFET N-CH Dual 4,5dB @ SK3065 Gate 20V 50mA 330mW 500MHz 400MHz TO-72 MOSFET N-CH Dual 4,5dB @ SK3991 Gate 25V 50mA 360mW 200MHz 200MHz TO-72 MOSFET* = Shield lead connected to case CB Radio Banner Exchange
  22. 22. RF Power Transistor 123 123 123 123 123 TO-92L TO-202 TO-202N TO-126 TO-220 T-31EBipolar NPN Power Transistor Transistor Power Gain Voltage Frequency Mode Case Pin 1232N3375 10W 5dB 28V 400MHz FM TO-602N3553 2,5W 12dB 28V 175MHz FM/AM TO-392N3632 20W 7dB 28V 175MHz FM TO-602N5943 1W 8dB 15V 400MHz FM TO-392N6094 75W 15dB 28V 30MHz FM/AM/SSB TO-2172SC1173 10W 100MHz FM/AM/SSB TO-2202SC1306 16W 30MHz FM/AM/SSB TO-220 BCE2SC1307 16W 12dB 12V 30MHz FM/AM/SSB TO-220 BCE
  23. 23. 2SC1590 5W 10dB 12,5V 136-174MHz FM TO-220 BEC2SC1591 14W 7,5dB 12,5V 136-174MHz FM TO-220 BEC2SC1678 5W 30MHz TO-220 BCE2SC1728 8W 80MHz TO-202 EBC2SC1729 14W 10dB 13,5V 175MHz FM T-31E2SC1909 10W 14,5dB 13,5V 50MHz FM/AM/SSB TO-220 BCE2SC1944 13W 11,1dB 12V 30MHz TO-220 BCE2SC1945 16W 14,5dB 12V 30MHz FM/AM/SSB TO-220 BEC2SC1946 25W 6,7dB 13,5V 175MHz FM T-31E2SC1946A 30W 10dB 13,5V 175MHz FM T-31E2SC1957 1,8W 17dB 12V 30MHz TO-126 ECB2SC1966 3W 7,8dB 13,5V 470MHz FM T-31E2SC1967 7W 6,7dB 13,5V 470MHz FM T-31E2SC1968 14W 3,7dB 13,5V 470MHz FM T-31E2SC1968A 14W 5,4dB 13,5V 470MHz FM T-31E2SC1969 18W 12dB 12V 30MHz FM/AM/SSB TO-220 BCE2SC1970 1,5W 10dB 13,5V 175MHz TO-220 BEC2SC1971 7W 10dB 13,5V 175MHz TO-220 BEC2SC1972 14W 10dB 13,5V 175MHz TO-220 BEC2SC1973 1W 50MHz TO-92L BCE2SC1974 13W 10dB 13,5V 30MHz TO-220 BCE2SC1975 4W 10dB 13,5V 30MHz TO-220 BCE2SC2028 1,8W 30MHz TO-126 ECB
  24. 24. 2SC2029 6W 30MHz TO-220 BCE2SC2036A 1,4W TO-202 BCE2SC2050 20W 12dB 13,5V 30MHz FM/AM/SSB TO-220 BCE2SC2053 0,2W 15,7dB 12V 175MHz FM/AM TO-92L BCE2SC2055 0,25W 15,3dB 12V 175MHz FM/AM TO-92L BCE2SC2075 4W 13,5 27MHz TO-220 BCE2SC2078 4W 13dB 12V 100MHz FM/AM TO-220 BCE2SC2086 0,45W 13dB 12V 175MHz FM/AM TO-92L BCE2SC2092 4W 13dB 12V 100MHz FM/AM/SSB TO-220 BCE2SC2094 15W 8,8dB 13,5V 175MHz FM/AM/SSB T-31E2SC2166 6W 13,8dB 12V 30MHz FM/AM/SSB TO-220 BCE2SC2207 16W TO-220 BEC2SC2237 6W 13,8dB 13,5V 175MHz FM T-31E2SC2312 18,5W 27MHz FM/AM/SSB TO-220 BCE2SC2314 1,8W 17dB 12V 180MHz FM/AM TO-126 ECB2SC2509 13W 14dB 30MHz TO-220 BEC2SC2527 60W TO-2202SC2538 0,6W 10dB 12V 175MHz FM/AM TO-92L BCE2SC2539 14W 14,5dB 13,5V 175MHz FM T-31E2SC2660 30W TO-2202SC2695 23W 1,9dB 13,5V 520MHz FM T-31E2SC3001 6W 13dB 7,2V 175MHz FM T-31E2SC3018 3W 13dB 7,2V 175MHz FM T-31E2SC3020 3W 10dB 12,5V 520MHz FM T-31E
  25. 25. 2SC3021 7W 7,7dB 12,5V 520MHz FM T-31E2SC3022 18W 4,8dB 12,5V 520MHz FM T-31E2SC3103 2,8W 6,7dB 7,2V 520MHz FM T-31E2SC3104 6W 4,8dB 7,2V 520MHz FM T-31E2SC3133 13W 14dB 12V 1,5-30MHz FM/AM/SSB TO-220 BEC2SC3299 20W TO-2202SC4137 4W 400MHz TO-1262SC4693 FM/AM TO-92L BCEKTC1006 1W 100MHz FM/AM TO-92L ECBKTC1969 16W 12dB 12V 100MHz FM/AM TO-220 BCEKTC2078 4W 11dB 12V 100MHz FM/AM TO-220 BCEMRF161 5W 13,5dB 12,5V 225-500MHz FM/AM TO-220 BECMRF162 15W 13,5dB 12,5V 225-500MHz FM/AM TO-220 BECMRF163 25W 12dB 12,5V 225-500MHz FM/AM TO-220 BECMRF260 5W 10dB 12,5V 136-174MHz FM TO-220 BECMRF261 10W 5,2dB 12,5V 136-174MHz FM TO-220 BECMRF262 14W 7,5dB 12,5V 136-174MHz FM TO-220 BECMRF264 30W 5,2dB 12,5V 136-174MHz TO-220 BECMRF340 8W 13dB 28V 30-200MHz TO-220 BECMRF342 24W 11dB 28V 30-200MHz TO-220 BECMRF344 60W 6dB 28V 30-200MHz TO-220MRF475 12W 10dB 13,5V 1,5-30MHz FM/AM/SSB TO-220 BCEMRF476 3W 15dB 13,5V 1,5-30MHz FM/AM/SSB TO-220 BCE
  26. 26. MRF477 40W 15dB 13,5V 1,5-30MHz FM/AM/SSB TO-220 BECMRF479 15W 10dB 13,5V 1,5-30MHz FM/AM/SSB TO-220MRF485 15W 10dB 28V 1,5-30MHz TO-220MRF486 40W 15dB 28V 1,5-30MHz TO-220MRF496 40W 15dB 13,5V 1,5-30MHz TO-220MRF497 60W 10dB 13,5V 27-50MHz TO-220 BECMRF660 7W 5,4dB 12,5V 400-512MHz TO-220FET Power TransistorMS1307 25W dB 13,5V 30MHz FM/AM/SSB TO-220 GDS CB Radio Banner Exchange
  27. 27. 2SC1307 Silicon NPN Transistor Final RF Power OutputThe 2SC1307 is a silicon NPN epitaxial planer typetransistor designed for RF power amplifiers on HFband mobile radio applications. BCEFeatures: q High Power Gain: Gpe >/= 12dB (VCC = 12V, PO = 16W, f = 27MHz) q Ability to Withstand Infinite VSWR Load when Operated at: VCC = 16V, PO = 20W, f = 27MHzApplication: q10 to 14 Watt Output Power Class AB Amplifier Applications in HF BandAbsolute Maximum Ratings: (TC = +25°C unless otherwise specified)Collector-Emitter Voltage (RBE = Infinity), VCEO 25VCollector-Base Voltage, VCBO 60VEmitter-Base Voltage, VEBO 5VCollector Current, IC 6ACollector Power Dissipation (TA = +25°C), PD 1.7WCollector Power Dissipation (TC = +50°C), PD 20WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Case, RthJC 6.25°C/WThermal Resistance, Junction-to-Ambient, RthJA 73.5°C/W
  28. 28. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max UnitCollector-Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 60 - - VCollector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity 25 - - VEmitter-Base Breakdown Voltage V(BR)EBO IE = 5mA, IC = 0 5 - - VCollector Cutoff Current ICBO VCB = 30V IE = 0 - - 100 µAEmitter Cutoff Current IEBO VEB = 4V, IC = 0 - - 100 µADC Forward Current Gain hFE VCE = 12V, IC = 10mA, Note 1 10 50 180Power Output PO VCC = 12V, Pin = 1W, f = 27MHz 16 18 - WCollector Efficiency 60 70 - %Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%. CB Radio Banner Exchange
  29. 29. 2SC1590 Silicon NPN Transistor RF Power OutputThe 2SC1590 is a silicon NPN epitaxial planer typetransistor designed for 136-174MHz RF poweramplifiers on VHF band mobile radio applications. BECFeatures: q High Power Gain: Gpe >/= 10dB (VCC = 13.5V, PO = 6W, f = 175MHz) q Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 6W, f = 175MHzApplication: q4 to 5 Watt Output Power Amplifier Applications in VHF BandAbsolute Maximum Ratings: (TC = +25°C unless otherwise specified)Collector-Emitter Voltage (RBE = Infinity), VCEO 17VCollector-Base Voltage, VCBO 35VEmitter-Base Voltage, VEBO 4VCollector Current, IC 12ACollector Power Dissipation (TA = +25°C), PD 1.5WCollector Power Dissipation (TC = +50°C), PD 12.5WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Case, RthJC 10°C/WThermal Resistance, Junction-to-Ambient, RthJA 83°C/W
  30. 30. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max UnitCollector-Base Breakdown Voltage V(BR)CBO IC = 10mA, IE = 0 35 - - VCollector-Emitter Breakdown Voltage V(BR)CEO IC = 50mA, RBE = Infinity 17 - - VEmitter-Base Breakdown Voltage V(BR)EBO IE = 5mA, IC = 0 4 - - VCollector Cutoff Current ICBO VCB = 25V IE = 0 - - 500 µAEmitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 500 µADC Forward Current Gain hFE VCE = 10V, IC = 100mA, Note 1 10 50 180Power Output PO VCC = 13.5V, Pin = 600mW, f = 175MHz 6 7 - WCollector Efficiency 60 70 - %Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%. CB Radio Banner Exchange
  31. 31. 2SC1591 Silicon NPN Transistor RF Power OutputThe 2SC1591 is a silicon NPN epitaxial planer typetransistor designed for 136-174MHz RF poweramplifiers on VHF band mobile radio applications. BECFeatures: q High Power Gain: Gpe >/= 7.5dB (VCC = 13.5V, PO = 14W, f = 175MHz) q Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 18W, f = 175MHzApplication: q10 to 14 Watt Output Power Amplifier in VHF Band Mobile Radio ApplicationsAbsolute Maximum Ratings: (TC = +25°C unless otherwise specified)Collector-Emitter Voltage (RBE = Infinity), VCEO 17VCollector-Base Voltage, VCBO 35VEmitter-Base Voltage, VEBO 4VCollector Current, IC 3.5ACollector Power Dissipation (TA = +25°C), PD 1.5WCollector Power Dissipation (TC = +50°C), PD 25WOperating Junction Temperature, TJ +175°CStorage Temperature Range, Tstg -55° to +175°CThermal Resistance, Junction-to-Case, RthJC 6°C/WThermal Resistance, Junction-to-Ambient, RthJA 100°C/W
  32. 32. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max UnitCollector-Base Breakdown Voltage V(BR)CBO IC = 10mA, IE = 0 35 - - VCollector-Emitter Breakdown Voltage V(BR)CEO IC = 50mA, RBE = Infinity 17 - - VEmitter-Base Breakdown Voltage V(BR)EBO IE = 10mA, IC = 0 4 - - VCollector Cutoff Current ICBO VCB = 25V IE = 0 - - 1000 µAEmitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 500 µADC Forward Current Gain hFE VCE = 10V, IC = 100mA, Note 1 10 50 180Power Output PO VCC = 13.5V, Pin = 2.5W, f = 175MHz 14 15 - WCollector Efficiency 60 70 - %Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%. CB Radio Banner Exchange
  33. 33. 2SC1909 Silicon NPN Transistor Final RF Power OutputDescription:2SC1909 is a silicon NPN transistor in a TO220 type case designed for use in highpower output amplifier stages such as citizen band communications equipment. BCEAbsolute Maximum Ratings: (TC = +25°C unless otherwise specified)Collector-Emitter Voltage (RBE = 150 Ohm), VCER 75VCollector-Base Voltage, VCBO 80VEmitter-Base Voltage, VEBO 5VCollector Current, IC Continuous 3A Peak 5ACollector Power Dissipation (TA = +25°C), PD 1.2WCollector Power Dissipation (TC = +50°C), PD 10WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°CElectrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max UnitCollector-Base Breakdown Voltage V(BR)CBO IC = 100µA, IB = 0 80 - - VCollector-Emitter Breakdown Voltage V(BR)CER IC = 1mA, RBE = 150 Ohm 75 - - VEmitter-Base Breakdown Voltage V(BR)EBO IE = 100µA, IC = 0 5 - - VCollector Cutoff Current ICBO VCB = 40V IE = 0 - - 10 µAEmitter Cutoff Current IEBO VEB = 4V, IC = 0 - - 10 µADC Current Gain hFE VCE = 5V, IC = 0.5A 25 - 200Collector-Emitter Saturation Voltage VCE(sat) IC = 1A, IB = 0.1A - 0.15 0.60 VBase-Emitter Saturation Voltage VBE(sat) IC = 1A, IB = 0.1A - 0.9 1.2 VCurrent Gain-Bandwidth Product fT VCE = 10V, IC = 0.1A 100 150 - MHz
  34. 34. Output Capacitance Cob VCB = 10V, f = 1MHz 25 - -Power Output PO VCC = 12V, Pin = 0.2W, f = 27MHz 4.0 - - WCollector Efficiency 60 - - % CB Radio Banner Exchange
  35. 35. 2SC1945 Silicon NPN Transistor Final RF Power OutputThe 2SC1945 is a silicon NPN epitaxial planer typetransistor designed for RF power amplifiers on HFband mobile radio applications. BECFeatures: q High Power Gain: Gpe >/= 14,5dB (VCC = 12V, PO = 18W, f = 27MHz) q Ability to Withstand Infinite VSWR Load when Operated at: VCC = 16V, PO = 18W, f = 27MHzApplication: q10 to 14 Watt Output Power Class AB Amplifier Applications in HF BandAbsolute Maximum Ratings: (TC = +25°C unless otherwise specified)Collector-Emitter Voltage (RBE = Infinity), VCEO 40VCollector-Base Voltage, VCBO 80VEmitter-Base Voltage, VEBO 5VCollector Current, IC 6ACollector Power Dissipation (TA = +25°C), PD 1.5WCollector Power Dissipation (TC = +50°C), PD 20WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Case, RthJC 6.25°C/WThermal Resistance, Junction-to-Ambient, RthJA 83,3°C/W
  36. 36. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max UnitCollector-Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 60 - - VCollector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity 40 - - VEmitter-Base Breakdown Voltage V(BR)EBO IE = 5mA, IC = 0 5 - - VCollector Cutoff Current ICBO VCB = 30V IE = 0 - - 100 µAEmitter Cutoff Current IEBO VEB = 4V, IC = 0 - - 100 µADC Forward Current Gain hFE VCE = 12V, IC = 10mA, Note 1 10 50 180Power Output PO VCC = 12V, Pin = 1W, f = 27MHz 14 16 - WCollector Efficiency 60 70 - %Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%. CB Radio Banner Exchange
  37. 37. 2SC1946 Silicon NPN Transistor Final RF Power Output in VHF band mobile radio application. ECEThe 2SC1946 is a silicon NPN epitaxial planer typetransistor designed for RF power amplifiers. EBEFeatures: q High Power Gain: Gpe >/= 6,7dB (VCC = 13,5V, PO = 28W, f = 175MHz) q Ability to Withstand Infinite VSWR Load when Operated at: VCC = 15,2V, PO = 30W, f = 175MHzApplication: q25 Watt output power amplifiers in VHF band.Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)Collector-Emitter Voltage (RBE = Infinity), VCEO 17VCollector-Base Voltage, VCBO 35VEmitter-Base Voltage, VEBO 4VCollector Current, IC 7ACollector Power Dissipation (TA = +25°C), PD 3WCollector Power Dissipation (TC = +50°C), PD 50WOperating Junction Temperature, TJ +175°CStorage Temperature Range, Tstg -65° to +175°CThermal Resistance, Rth-c 3°C/WElectrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max UnitCollector-Base Breakdown Voltage V(BR)CBO IC = 10mA, IE = 0 35 - - V
  38. 38. Collector-Emitter Breakdown Voltage V(BR)CEO IC = 100mA, RBE = Infinity 17 - - VEmitter-Base Breakdown Voltage V(BR)EBO IE = 10mA, IC = 0 4 - - VCollector Cutoff Current ICBO VCB = 25V IE = 0 - - 2 mAEmitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 1 mADC Forward Current Gain hFE VCE = 10V, IC = 0,2A, Note 1 10 50 180Power Output PO VCC = 13,5V, Pin = 6W, f = 175MHz 28 32 - WCollector Efficiency 60 70 - %Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%. CB Radio Banner Exchange
  39. 39. 2SC1946A Silicon NPN Transistor Final RF Power Output in VHF band mobile radio application. ECEThe 2SC1946A is a silicon NPN epitaxial planer typetransistor designed for RF power amplifiers. EBEFeatures: q High Power Gain: Gpe >/= 10dB (VCC = 13,5V, PO = 30W, f = 175MHz) q Ability to Withstand Infinite VSWR Load when Operated at: VCC = 15,2V, PO = 30W, f = 175MHzApplication: q25 Watt output power amplifiers in VHF band.Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)Collector-Emitter Voltage (RBE = Infinity), VCEO 17VCollector-Base Voltage, VCBO 35VEmitter-Base Voltage, VEBO 4VCollector Current, IC 7ACollector Power Dissipation (TA = +25°C), PD 3WCollector Power Dissipation (TC = +50°C), PD 50WOperating Junction Temperature, TJ +175°CStorage Temperature Range, Tstg -55° to +175°CThermal Resistance, Rth-c 3°C/WElectrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max UnitCollector-Base Breakdown Voltage V(BR)CBO IC = 10mA, IE = 0 35 - - V
  40. 40. Collector-Emitter Breakdown Voltage V(BR)CEO IC = 100mA, RBE = Infinity 17 - - VEmitter-Base Breakdown Voltage V(BR)EBO IE = 10mA, IC = 0 4 - - VCollector Cutoff Current ICBO VCB = 25V IE = 0 - - 2 mAEmitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 1 mADC Forward Current Gain hFE VCE = 10V, IC = 0,2A, Note 1 10 50 180Power Output PO VCC = 13,5V, Pin = 6W, f = 175MHz 30 35 - WCollector Efficiency 60 70 - %Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%. CB Radio Banner Exchange
  41. 41. 2SC1957 Silicon NPN Transistor Final RF Power OutputThe 2SC1957 is a silicon NPN epitaxial planer typetransistor designed for RF power amplifiers on HFband mobile radio applications. BCEFeatures: q High Power Gain: Gpe >/= 12dB (VCC = 12V, PO = 16W, f = 27MHz) q Ability to Withstand Infinite VSWR Load when Operated at: VCC = 16V, PO = 20W, f = 27MHzApplication: q10 to 14 Watt Output Power Class AB Amplifier Applications in HF BandAbsolute Maximum Ratings: (TC = +25°C unless otherwise specified)Collector-Emitter Voltage (RBE = Infinity), VCEO 25VCollector-Base Voltage, VCBO 60VEmitter-Base Voltage, VEBO 5VCollector Current, IC 6ACollector Power Dissipation (TA = +25°C), PD 1.7WCollector Power Dissipation (TC = +50°C), PD 20WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Case, RthJC 6.25°C/W
  42. 42. Thermal Resistance, Junction-to-Ambient, RthJA 73.5°C/WElectrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max UnitCollector-Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 60 - - VCollector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity 25 - - VEmitter-Base Breakdown Voltage V(BR)EBO IE = 5mA, IC = 0 5 - - VCollector Cutoff Current ICBO VCB = 30V IE = 0 - - 100 µAEmitter Cutoff Current IEBO VEB = 4V, IC = 0 - - 100 µADC Forward Current Gain hFE VCE = 12V, IC = 10mA, Note 1 10 50 180Power Output PO VCC = 12V, Pin = 1W, f = 27MHz 16 18 - WCollector Efficiency 60 70 - %Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%. CB Radio Banner Exchange
  43. 43. 2SC1969 Silicon NPN Transistor Final RF Power OutputThe 2SC1969 is a silicon NPN epitaxial planer typetransistor designed for RF power amplifiers on HFband mobile radio applications. BCEFeatures: q High Power Gain: Gpe >/= 12dB (VCC = 12V, PO = 16W, f = 27MHz) q Ability to Withstand Infinite VSWR Load when Operated at: VCC = 16V, PO = 20W, f = 27MHzApplication: q10 to 14 Watt Output Power Class AB Amplifier Applications in HF BandAbsolute Maximum Ratings: (TC = +25°C unless otherwise specified)Collector-Emitter Voltage (RBE = Infinity), VCEO 25VCollector-Base Voltage, VCBO 60VEmitter-Base Voltage, VEBO 5VCollector Current, IC 6ACollector Power Dissipation (TA = +25°C), PD 1.7WCollector Power Dissipation (TC = +50°C), PD 20WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Case, RthJC 6.25°C/W
  44. 44. Thermal Resistance, Junction-to-Ambient, RthJA 73.5°C/WElectrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max UnitCollector-Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 60 - - VCollector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity 25 - - VEmitter-Base Breakdown Voltage V(BR)EBO IE = 5mA, IC = 0 5 - - VCollector Cutoff Current ICBO VCB = 30V IE = 0 - - 100 µAEmitter Cutoff Current IEBO VEB = 4V, IC = 0 - - 100 µADC Forward Current Gain hFE VCE = 12V, IC = 10mA, Note 1 10 50 180Power Output PO VCC = 12V, Pin = 1W, f = 27MHz 16 18 - WCollector Efficiency 60 70 - %Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.
  45. 45. CB Radio Banner Exchange
  46. 46. 2SC1970 Silicon NPN Transistor RF Power OutputThe 2SC1970 is a silicon NPN epitaxial planer typetransistor designed for RF power amplifiers on VHFband mobile radio applications. BECFeatures: q High Power Gain: Gpe >/= 9,2dB (VCC = 13.5V, PO = 6W, f = 175MHz)Application: q0,8 to 1 Watt Output Power Amplifier Applications in VHF BandAbsolute Maximum Ratings: (TC = +25°C unless otherwise specified)Collector-Emitter Voltage (RBE = Infinity), VCEO 17VCollector-Base Voltage, VCBO 35VEmitter-Base Voltage, VEBO 4VCollector Current, IC 0,6ACollector Power Dissipation (TA = +25°C), PD 1WCollector Power Dissipation (TC = +50°C), PD 5WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Case, RthJC 25°C/WThermal Resistance, Junction-to-Ambient, RthJA 125#176;C/WElectrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit
  47. 47. Collector-Base Breakdown Voltage V(BR)CBO IC = 5mA, IE = 0 40 - - VCollector-Emitter Breakdown Voltage V(BR)CEO IC = 50mA, RBE = Infinity 17 - - VEmitter-Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 4 - - VCollector Cutoff Current ICBO VCB = 25V IE = 0 - - 100 µAEmitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 100 µADC Forward Current Gain hFE VCE = 10V, IC = 100mA, Note 1 10 50 180Power Output PO VCC = 13.5V, Pin = 600mW, f = 175MHz 1 1,2 - WCollector Efficiency 50 60 - %Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%. CB Radio Banner Exchange
  48. 48. 2SC1971 Silicon NPN Transistor RF Power OutputThe 2SC1971 is a silicon NPN epitaxial planer typetransistor designed for RF power amplifiers on VHFband mobile radio applications. BECFeatures: q High Power Gain: Gpe >/= 10dB (VCC = 13.5V, PO = 6W, f = 175MHz) q Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 6W, f = 175MHzApplication: q4 to 5 Watt Output Power Amplifier Applications in VHF BandAbsolute Maximum Ratings: (TC = +25°C unless otherwise specified)Collector-Emitter Voltage (RBE = Infinity), VCEO 17VCollector-Base Voltage, VCBO 35VEmitter-Base Voltage, VEBO 4VCollector Current, IC 2ACollector Power Dissipation (TA = +25°C), PD 1.5WCollector Power Dissipation (TC = +50°C), PD 12.5WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Case, RthJC 10°C/WThermal Resistance, Junction-to-Ambient, RthJA 83°C/W
  49. 49. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max UnitCollector-Base Breakdown Voltage V(BR)CBO IC = 10mA, IE = 0 35 - - VCollector-Emitter Breakdown Voltage V(BR)CEO IC = 50mA, RBE = Infinity 17 - - VEmitter-Base Breakdown Voltage V(BR)EBO IE = 5mA, IC = 0 4 - - VCollector Cutoff Current ICBO VCB = 25V IE = 0 - - 500 µAEmitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 500 µADC Forward Current Gain hFE VCE = 10V, IC = 100mA, Note 1 10 50 180Power Output PO VCC = 13.5V, Pin = 600mW, f = 175MHz 6 7 - WCollector Efficiency 60 70 - %Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%. CB Radio Banner Exchange
  50. 50. 2SC1972 Silicon NPN Transistor RF Power OutputThe 2SC1972 is a silicon NPN epitaxial planer typetransistor designed for RF power amplifiers on VHFband mobile radio applications. BECFeatures: q High Power Gain: Gpe >/= 7,5dB (VCC = 13.5V, PO = 14W, f = 175MHz) q Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 18W, f = 175MHzApplication: q10 to 14 Watt Output Power Amplifier Applications in VHF BandAbsolute Maximum Ratings: (TC = +25°C unless otherwise specified)Collector-Emitter Voltage (RBE = Infinity), VCEO 17VCollector-Base Voltage, VCBO 35VEmitter-Base Voltage, VEBO 4VCollector Current, IC 3,5ACollector Power Dissipation (TA = +25°C), PD 1.5WCollector Power Dissipation (TC = +50°C), PD 25WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Case, RthJC 6°C/WThermal Resistance, Junction-to-Ambient, RthJA 100°C/W
  51. 51. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max UnitCollector-Base Breakdown Voltage V(BR)CBO IC = 10mA, IE = 0 35 - - VCollector-Emitter Breakdown Voltage V(BR)CEO IC = 50mA, RBE = Infinity 17 - - VEmitter-Base Breakdown Voltage V(BR)EBO IE = 5mA, IC = 0 4 - - VCollector Cutoff Current ICBO VCB = 25V IE = 0 - - 1000 µAEmitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 500 µADC Forward Current Gain hFE VCE = 10V, IC = 100mA, Note 1 10 50 180Power Output PO VCC = 13.5V, Pin = 600mW, f = 175MHz 14 15 - WCollector Efficiency 60 70 - %Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%. CB Radio Banner Exchange
  52. 52. 2SC1973 Silicon NPN Transistor RF AmplifierThe 2SC1973 is a silicon NPN epitaxial planer typetransistor designed for RF amplifiers on HF bandmobile radio applications. BCEApplication: qDriver Amplifier Applications in HF BandAbsolute Maximum Ratings: (TC = +25°C unless otherwise specified)Collector-Emitter Voltage (RBE = Infinity), VCEO 55VCollector-Base Voltage, VCBO -VEmitter-Base Voltage, VEBO -VCollector Current, IC 0,5ACollector Power Dissipation (TA = +25°C), PD 1WOperating Junction Temperature, TJ +135°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Ambient, RthJA -°C/W CB Radio Banner Exchange
  53. 53. 2SC2036A Audio Amplifier, Driver ECBAbsolute Maximum Ratings: (TA = +25°C unles otherwise specified)Collector-Base Voltage, VCBO 180VCollector-Emitter Voltage, VCEO 160VEmitter-Base Voltage, VEBO 5VCollector Current, IC Continuous 1.5A Peak 3.0ACollector Dissipation (TA = +25°C), PC 1WCollector Dissipation (TC = +25°C), PC 20WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°CElectrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max UnitCollector-Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 180 - - VCollector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity 160 - - VEmitter-Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 5 - - VCollector Cutoff Current ICBO VCB = 160V, IE = 0 - - 10 µADC Current Gain hFE IC = 150mA, VCE = 5V 60 - 200 IC = 500mA, VCE = 5V 30 - -Collector-Emitter Saturation Voltage VCE(sat) IC = 500mA, IB = 50mA - - 1 VBase-Emitter Voltage VBE VCE = 5V, IC = 150mA - - 1.5 VTransition Frequency fT IC = 500mA, VCE = 5V - 140 - MHz
  54. 54. Collector Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz - 14 - pF CB Radio Banner Exchange
  55. 55. 2SC2053 Silicon NPN Transistor RF AmplifierThe 2SC2053 is a silicon NPN epitaxial planer typetransistor designed for RF amplifiers on VHF bandmobile radio applications. BCEFeatures: q High Power Gain: Gpe >/= 15,7dB (VCC = 13,5V, PO = 0,15W, f = 175MHz)Application: qDriver Amplifier Applications in VHF BandAbsolute Maximum Ratings: (TC = +25°C unless otherwise specified)Collector-Emitter Voltage (RBE = Infinity), VCEO 17VCollector-Base Voltage, VCBO 40VEmitter-Base Voltage, VEBO 4VCollector Current, IC 0,3ACollector Power Dissipation (TA = +25°C), PD 0,6WOperating Junction Temperature, TJ +135°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Ambient, RthJA 183°C/WElectrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max UnitCollector-Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 40 - - VCollector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity 17 - - VEmitter-Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 4 - - VCollector Cutoff Current ICBO VCB = 15V IE = 0 - - 20 µA
  56. 56. Emitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 20 µADC Forward Current Gain hFE VCE = 10V, IC = 100mA, Note 1 10 50 180Power Output PO VCC = 13.5V, Pin = 4mW, f = 175MHz 0,15 0,2 - WCollector Efficiency 40 50 - %Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%. CB Radio Banner Exchange
  57. 57. 2SC2055 Silicon NPN Transistor RF AmplifierThe 2SC2055 is a silicon NPN epitaxial planer typetransistor designed for RF amplifiers on VHF bandmobile radio applications. BCEFeatures: q High Power Gain: Gpe >/= 13dB (VCC = 7,2V, PO = 0,2W, f = 175MHz)Application: qDriver Amplifier Applications in VHF BandAbsolute Maximum Ratings: (TC = +25°C unless otherwise specified)Collector-Emitter Voltage (RBE = Infinity), VCEO 9VCollector-Base Voltage, VCBO 18VEmitter-Base Voltage, VEBO 4VCollector Current, IC 0,3ACollector Power Dissipation (TA = +25°C), PD 0,5WOperating Junction Temperature, TJ +135°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Ambient, RthJA 220°C/WElectrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max UnitCollector-Base Breakdown Voltage V(BR)CBO IC = 10mA, IE = 0 18 - - VCollector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity 9 - - VEmitter-Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 4 - - VCollector Cutoff Current ICBO VCB = 10V IE = 0 - - 30 µA
  58. 58. Emitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 30 µADC Forward Current Gain hFE VCE = 7V, IC = 50mA, Note 1 10 50 180Power Output PO VCC = 13.5V, Pin = 4mW, f = 175MHz 0,2 0,25 - WCollector Efficiency 50 60 - %Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%. CB Radio Banner Exchange
  59. 59. 2SC2078 Silicon NPN Transistor Final RF Power OutputThe 2SC2078 is a silicon NPN transistor in a TO220type case designed for use in high power outputamplifier stages such as citizen band communicationsequipment. BCEAbsolute Maximum Ratings: (TC = +25°C unless otherwise specified)Collector-Emitter Voltage (RBE = 150 Ohm), VCER 75VCollector-Base Voltage, VCBO 80VEmitter-Base Voltage, VEBO 5VCollector Current, IC Continuous 3A Peak 5ACollector Power Dissipation (TA = +25°C), PD 1.2WCollector Power Dissipation (TC = +50°C), PD 10WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°CElectrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max UnitCollector-Base Breakdown Voltage V(BR)CBO IC = 100µA, IB = 0 80 - - VCollector-Emitter Breakdown Voltage V(BR)CER IC = 1mA, RBE = 150 Ohm 75 - - VEmitter-Base Breakdown Voltage V(BR)EBO IE = 100µA, IC = 0 5 - - VCollector Cutoff Current ICBO VCB = 40V IE = 0 - - 10 µAEmitter Cutoff Current IEBO VEB = 4V, IC = 0 - - 10 µADC Current Gain hFE VCE = 5V, IC = 0.5A 25 - 200
  60. 60. Collector-Emitter Saturation Voltage VCE(sat) IC = 1A, IB = 0.1A - 0.15 0.60 VBase-Emitter Saturation Voltage VBE(sat) IC = 1A, IB = 0.1A - 0.9 1.2 VCurrent Gain-Bandwidth Product fT VCE = 10V, IC = 0.1A 100 150 - MHzOutput Capacitance Cob VCB = 10V, f = 1MHz 25 - -Power Output PO VCC = 12V, Pin = 0.2W, f = 27MHz 4.0 - - WCollector Efficiency 60 - - % CB Radio Banner Exchange
  61. 61. 2SC2086 Silicon NPN Transistor RF AmplifierThe 2SC2086 is a silicon NPN epitaxial planer typetransistor designed for RF amplifiers on HF bandmobile radio applications. BCEFeatures: q High Power Gain: Gpe >/= 13dB (VCC = 12V, PO = 0,3W, f = 27MHz)Application: qDriver Amplifier Applications in HF BandAbsolute Maximum Ratings: (TC = +25°C unless otherwise specified)Collector-Emitter Voltage (RBE = Infinity), VCEO 35VCollector-Base Voltage, VCBO 75VEmitter-Base Voltage, VEBO 4VCollector Current, IC 1ACollector Power Dissipation (TA = +25°C), PD 0,8WOperating Junction Temperature, TJ +135°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Ambient, RthJA 137,5°C/WElectrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max UnitCollector-Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 75 - - VCollector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity 35 - - VEmitter-Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 4 - - VCollector Cutoff Current ICBO VCB = 30V IE = 0 - - 10 µA
  62. 62. Emitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 100 µADC Forward Current Gain hFE VCE = 10V, IC = 100mA, Note 1 35 70 300Power Output PO VCC = 12V, Pin = 15mW, f = 27MHz 0,3 0,45 - WCollector Efficiency 50 60 - %Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%. CB Radio Banner Exchange
  63. 63. 2SC2092 Silicon NPN Transistor Final RF Power OutputThe 2SC2092 is a silicon NPN transistor in a TO-220type case designed for use in medium power outputamplifier stages such as citizen band communicationsequipment. BCEAbsolute Maximum Ratings: (TC = +25°C unless otherwise specified)Collector-Emitter Voltage (RBE = 150 Ohm), VCER 75VCollector-Base Voltage, VCBO 80VEmitter-Base Voltage, VEBO 5VCollector Current, IC Continuous 3A Peak 5ACollector Power Dissipation (TA = +25°C), PD 1.2WCollector Power Dissipation (TC = +50°C), PD 10WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°CElectrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max UnitCollector-Base Breakdown Voltage V(BR)CBO IC = 100µA, IB = 0 80 - - VCollector-Emitter Breakdown Voltage V(BR)CER IC = 1mA, RBE = 150 Ohm 75 - - VEmitter-Base Breakdown Voltage V(BR)EBO IE = 100µA, IC = 0 5 - - VCollector Cutoff Current ICBO VCB = 40V IE = 0 - - 10 µAEmitter Cutoff Current IEBO VEB = 4V, IC = 0 - - 10 µADC Current Gain hFE VCE = 5V, IC = 0.5A 25 - 200
  64. 64. Collector-Emitter Saturation Voltage VCE(sat) IC = 1A, IB = 0.1A - 0.15 0.60 VBase-Emitter Saturation Voltage VBE(sat) IC = 1A, IB = 0.1A - 0.9 1.2 VCurrent Gain-Bandwidth Product fT VCE = 10V, IC = 0.1A 100 150 - MHzOutput Capacitance Cob VCB = 10V, f = 1MHz 25 - -Power Output PO VCC = 12V, Pin = 0.2W, f = 27MHz 4.0 - - WCollector Efficiency 60 - - % CB Radio Banner Exchange
  65. 65. 2SC2094 Silicon NPN Transistor Final RF Power Output in VHF band mobile radio application. ECEThe 2SC2094 is a silicon NPN epitaxial planer typetransistor designed for RF power amplifiers. EBEFeatures: q High Power Gain: Gpe >/= 8,8dB (VCC = 13,5V, PO = 15W, f = 175MHz) q Ability to Withstand Infinite VSWR Load when Operated at: VCC = 15,2V, PO = 18W, f = 175MHzApplication: q10 to 14 Watt output linear power amplifiers in VHF band.Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)Collector-Emitter Voltage (RBE = Infinity), VCEO 17VCollector-Base Voltage, VCBO 40VEmitter-Base Voltage, VEBO 4,5VCollector Current, IC 3,5ACollector Power Dissipation (TA = +25°C), PD 2WCollector Power Dissipation (TC = +50°C), PD 30WOperating Junction Temperature, TJ +175°CStorage Temperature Range, Tstg -55° to +175°CThermal Resistance, Rth-c 5°C/WElectrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max UnitCollector-Base Breakdown Voltage V(BR)CBO IC = 10mA, IE = 0 40 - - V
  66. 66. Collector-Emitter Breakdown Voltage V(BR)CEO IC = 100mA, RBE = Infinity 17 - - VEmitter-Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 4,5 - - VCollector Cutoff Current ICBO VCB = 25V IE = 0 - - 2 mAEmitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 0,5 mADC Forward Current Gain hFE VCE = 10V, IC = 0,1A, Note 1 10 50 180Power Output PO VCC = 13,5V, Pin = 2W, f = 175MHz 15 16 - WCollector Efficiency 60 70 - %Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%. CB Radio Banner Exchange
  67. 67. 2SC2166 Silicon NPN Transistor Final RF Power OutputThe 2SC2166 is a silicon NPN epitaxial planer typetransistor designed for RF power amplifiers on HFband mobile radio applications. BCEFeatures: q High Power Gain: Gpe >/= 13,8dB (VCC = 12V, PO = 6W, f = 27MHz)Application: q3 to 4 Watt Output Power Class AB Amplifier Applications in HF BandAbsolute Maximum Ratings: (TC = +25°C unless otherwise specified)Collector-Emitter Voltage (RBE = Infinity), VCEO 75VCollector-Base Voltage, VCBO 75VEmitter-Base Voltage, VEBO 5VCollector Current, IC 4ACollector Power Dissipation (TA = +25°C), PD 1.5WCollector Power Dissipation (TC = +50°C), PD 12,5WOperating Junction Temperature, TJ +150°CStorage Temperature Range, Tstg -55° to +150°CThermal Resistance, Junction-to-Case, RthJC 10°C/WThermal Resistance, Junction-to-Ambient, RthJA 83°C/WElectrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit
  68. 68. Collector-Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 75 - - VCollector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity 75 - - VEmitter-Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 5 - - VCollector Cutoff Current ICBO VCB = 30V IE = 0 - - 100 µAEmitter Cutoff Current IEBO VEB = 4V, IC = 0 - - 100 µADC Forward Current Gain hFE VCE = 12V, IC = 100mA, Note 1 35 70 180Power Output PO VCC = 12V, Pin = 0,25W, f = 27MHz 6 7,5 - WCollector Efficiency 55 60 - %Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%. CB Radio Banner Exchange

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