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LiClO 4 /PS-PEO-PS Complex as High Capacitance, Smooth, Thin Film Dielectric for Organic Thin Film Transistor Jihua Chen University of Minnesota at Twin Cities Chemical Engineering and Materials Science (J. Chen, C.D. Frisbie, F.S. Bates,  J. Phys. Chem. C , 2009)
Acknowledgements ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]
Introduction: Organic Electronics http://www.packagingessentials.be/ ,[object Object],[object Object],[object Object],[object Object]
[object Object],[object Object],Introduction: Organic Thin Film Transistors (OTFTs)
Introduction: Gate Dielectrics in OTFTs ,[object Object],[object Object],W/L=10
J. Electrochem. Soc., 133, 315 (1986) Introduction: PEO-based Polymer Electrolytes   [O:Li] X LiClO4 J. Electrochem. Soc., 143, 3982 (1996)
Motivation for the SOS/Li System ,[object Object],[object Object],[object Object],J. Electrochem. Soc., 143, 3982 (1996) Li  + [O:Li] X LiClO4
Preparation of SOS/LiClO 4 ,[object Object],[object Object],[object Object],[object Object],Li  + [O:Li] =  3:1, 6:1, 12:1, 24:1, 48:1 SOS/LiClO 4 M n =7k-14k-7k
Heat  Flow  (Endo up)
 
Salt-Induced Lamellae Formation:  Small Angle X-ray Scattering ,[object Object],[object Object],[object Object]
Atomic Force Microscopy [O:Li] = 6:1  [O:Li] = 48:1  [O:Li] = 24:1  200 nm Height Images: FFT Filtered Images:
Surface Roughness Surface roughness was estimated over  a 5 µm by 5 µm area in AFM experiments.
Capacitance  Measurement In/Ga Eutectic Alloy Heavily Doped Si  (500 µm)  SiO 2   (2.2 nm)  SOS/Li Dielectric  (30-1000 nm) Gold Electrode  (50 nm) V I 200 nm
Frequency and Bias  Dependent Capacitance [O:Li] = 48:1 Amplitude  = 0.1V No Li (3 samples) [O:Li]=48:1 (3 samples)
The Effect of Lithium Concentration ∞ (No Li) [O:Li]
In/Ga Eutectic Alloy Heavily Doped Si  (500 µm)  SiO 2   (2.2 nm)  SOS/Li Dielectric  (30-1000 nm) Gold Electrode  (50 nm) V I 200 nm ,[object Object],[object Object],[object Object]
Comparison with Other Dielectrics 1. Inorganics ,[object Object],[object Object],[object Object]
2. Polymer Dielectrics 3. Self-assembled Monolayers
Reasons for Using  Randomly Oriented Lamellae PS PEO/Li PEO/Li PS Top Electrode Top Electrode Bottom Electrode Bottom Electrode C  TOTAL-1 = C PS-1  + C PEO-1 C  TOTAL = C PS  + C PEO Low Capacitance Low Leakage High Capacitance High Leakage
 

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Acs 2009 3 22 Final

  • 1. LiClO 4 /PS-PEO-PS Complex as High Capacitance, Smooth, Thin Film Dielectric for Organic Thin Film Transistor Jihua Chen University of Minnesota at Twin Cities Chemical Engineering and Materials Science (J. Chen, C.D. Frisbie, F.S. Bates, J. Phys. Chem. C , 2009)
  • 2.
  • 3.
  • 4.
  • 5.
  • 6. J. Electrochem. Soc., 133, 315 (1986) Introduction: PEO-based Polymer Electrolytes [O:Li] X LiClO4 J. Electrochem. Soc., 143, 3982 (1996)
  • 7.
  • 8.
  • 9. Heat Flow (Endo up)
  • 10.  
  • 11.
  • 12. Atomic Force Microscopy [O:Li] = 6:1 [O:Li] = 48:1 [O:Li] = 24:1 200 nm Height Images: FFT Filtered Images:
  • 13. Surface Roughness Surface roughness was estimated over a 5 µm by 5 µm area in AFM experiments.
  • 14. Capacitance Measurement In/Ga Eutectic Alloy Heavily Doped Si (500 µm) SiO 2 (2.2 nm) SOS/Li Dielectric (30-1000 nm) Gold Electrode (50 nm) V I 200 nm
  • 15. Frequency and Bias Dependent Capacitance [O:Li] = 48:1 Amplitude = 0.1V No Li (3 samples) [O:Li]=48:1 (3 samples)
  • 16. The Effect of Lithium Concentration ∞ (No Li) [O:Li]
  • 17.
  • 18.
  • 19. 2. Polymer Dielectrics 3. Self-assembled Monolayers
  • 20. Reasons for Using Randomly Oriented Lamellae PS PEO/Li PEO/Li PS Top Electrode Top Electrode Bottom Electrode Bottom Electrode C TOTAL-1 = C PS-1 + C PEO-1 C TOTAL = C PS + C PEO Low Capacitance Low Leakage High Capacitance High Leakage
  • 21.