The AC logic levels are the points at the receiver where the AC input timing parameters (setup and hold) must be satisfied. The DC logic levels provide a point of hysteresis. When the input level crosses the DC reference point, the receiver switches to the new logic level and maintains this new state as long as the signal does not cross below the threshold
Synchronous ODT Modeselected whenever the DLL is turned on and locked and when either RTT_NOM or RTT_WR is enabled.
the DQS will be used to repeatedly delayed in small increments by the memory controller and sample the CLK until the rising edge of CLK is detected. During this protocol, each set of DQ (8 bits) is output with a “0” until the rising edge is detected by the DQS at which time the DQ will be output with a “1”. The memory controller will detect these “1” on the DQ bus and then knows the correct DQS compensation to align the DQS and CLK on the write path. Once all DQS have been adjusted, these compensation values will be stored for each DQS for future usage. Then the memory controller sends another MRS command to exit the write level mode.
puts the DDR3 memory devices into a special mode by writing to the MR3 register MPR bitthe memory controller knows that data stream is consistently outputting on the DQ bus
Last pt - to avoid layer to layer transmission velocity differences, which otherwise increase the skew within the group.
Transcript of "DDR3"
History Comparison DDR3 Improvements ◦ Signaling ◦ Power ◦ Pin Out ◦ ODT ◦ Fly – By –Topology ◦ READ/WRITE Leveling Power Up Routing Guidelines
DDR RAM was first introduced to allow data transfers on each edge of the memory clock DDR technology has been developed because the actual DRAM chips can‟t keep up with the data rates required by modern processors The DDR memory modules have a 64-bit interface so data is transferred at 64 times the transfer rate
DDR3 is a member of the SDRAM family of technologies (DDR/ DDR2/ DDR3) DDR3 SDRAM - double-data- rate three synchronous dynamic random access memory DDR3 is a RAM interface technology used for high bandwidth
Items DDR3 SDRAM DDR2 SDRAM DDR SDRAM Clock frequency 400/533/667/800 MHz 200/266/333/400 MHz 100/133/166/200 MHz Transfer data rate 800/1066/1333/1600 Mbps 400/533/667/800 Mbps 200/266/333/400 Mbps I/O width x4/x8/x16 x4/x8/x16 x4/x8/x16/x32 Prefetch bit width 8-bit 4-bit 2-bit Clock input Differential clock Differential clock Differential clock Burst length 8, 4 (Burst chop) 4, 8 2, 4, 8 Data strobe Differential data strobe Differential data strobe Single data strobe Supply voltage 1.5V 1.8V 2.5V Interface SSTL_15 SSTL_18 SSTL_2 CAS latency (CL) 5, 6, 7, 8, 9, 10 clock 3, 4, 5 clock 2, 2.5, 3 clockOn die termination (ODT) Supported Supported UnsupportedComponent package FBGA FBGA TSOP(II) / FBGA / LQFP
The following classes are defined by standard JESD8-6 from JEDEC: ◦ Class I (un-terminated/symmetrically parallel terminated) ◦ Class II (series terminated) ◦ Class III (asymmetrically parallel terminated) ◦ Class IV (asymmetrically double parallel terminated) SSTL buses –are less susceptible to ◦ overshoot ◦ undershoot ◦ ringing effects
Supply voltage reduced from 1.8V to 1.5V ◦ 30% power reduction (Micron claim) ◦ 25% is JEDEC‟s official claim (Compared to DDR2 at same frequency bin) Lower I/O buffer power 34 ohm driver vs. 18 ohm driver at memory device Improved bandwidth per Watt
Nominal ODT ◦ ODT (NOM) is the base termination resistance for each applicable ball, it is enabled or disabled via MR1 Dynamic ODT ◦ the termination strength of the DDR3 SDRAM can be changed without issuing an MRS command, essentially changing the ODT termination on the fly (RTT_NOM to RTT_WR during a a WRITE burst ) Synchronous ODT Mode ◦ The DRAM‟s internal ODT signal is delayed a number of clock cycles defined by the AL relative to the external ODT signal. Thus ODTL on = CWL + AL - 2 and ODTL off = CWL + AL - 2. Asynchronous ODT Mode ◦ In asynchronous ODT mode, ODT controls RTT by analog time
Allows for controller to determine the time delay for data command to data output of each DRAM (byte lane)Enables controller to capture data for each byte lane ◦ Write Leveling manages the DQS/DQ on write data ◦ Read Leveling manages the DQS/DQ on read data
First the memory controller puts the DDR3 memory devices into the read leveling mode by writing to the MR3 register MPR bit Causes output of a stream of “0101…”with a regular memory read command(read training sequence) the memory controller will adjust the internal DQS delay mechanisms on the read data path to create a proper window of the best capture window for the DQ using DQS Once these internal compensations are created for each DQS, the values will be stored for future usage MR3 is set back to normal DDR3 operational mode.
Burst Length control (BC4/8 on the fly) ◦ 8-bit pre-fetch is standard for DDR3 memories ◦ Thus, burst length of 8 is default DDR3‟s also support „pseudo BL4‟using burst chip
Improved system stability ◦ Eliminates unknown startup states Known initialization and recovery state ◦ Cold boot reset ◦ Warm boot reset ◦ Removes controller burden to ensure no illegal commands
2X the bandwidth of DDR2 ◦ Component per pin800 MT/s to 1600 MT/s ◦ Bus bandwidth6400 MT/s to 12,800 MT/s 8 banks vs. 4 banks ◦ More open banks for back to back access ◦ Hide turnaround time ◦ Hide tRP
Improved power delivery ◦ More power and ground balls Improved signal quality ◦ Better power & ground distribution ◦ And better signal referencing Fully populated ball grid ◦ Stronger reliability ◦ Improved pin placement Less pin skew ◦ Tighter timing leaving chip
Address inputs A[0:14]: Provide the row address for ACTIVATE commands, and the column address and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array in the respective bank. Bank address inputs BA[2:0] : define the bank to which an ACTIVATE, READ, WRITE, or PRECHARGE command is being applied. Clock CK ,CK# : are differential clock inputs. All control and address input signals are sampled on the crossing of the positive edge of CK and the negative edge of CK#. Clock enable: CKE enables (registered HIGH) and disables(registered LOW) internal circuitry and clocks on the DRAM
Chip select CS# : enables (registered LOW) and disables (registered HIGH) the command decoder. All commands are masked when CS# is registered HIGH Input data mask DM: is an input mask signal for write data. Command inputs RAS#, CAS#, and WE# : (along with CS#) define the command being entered and are referenced to VREFCA. Data strobe DQS, DQS#: Output with read data. Edge-aligned with read data. Input with write data. Center-aligned to write data
Introduction of an asynchronous RESET# pin ◦ Prevent Illegal commands and/or unwanted states Cold reset Warm reset ◦ Known initialization Resets all state information No power-down required Destructive to data contents ZQ Calibration Pin ◦ The RZQ resistor is connected between the DDR3 memory and ground ◦ Value = 240 Ohm +/-1% ◦ Permits driver and ODT calibration over process, voltage, and temperatures
DDR3 memories have two power pins defined. ◦ Same voltage level of 1.5V nominal ◦ Separate pins help reduce power supply noise/interruption VDD –Core Power VDDQ –IO Power ◦ Therefore, there will be 2 different cases: Case 1 –two separate sources Case 2 –Single voltage source for both rails
The following should be applied whether a single voltage source or a separate voltage sources are used: ◦ Apply Power: RESET# - to be maintained below 0.2V X VDD (min 200us) and all other inputs may be undefined ◦ The voltage ramp time between 300mV to VDD min must be no greater than 200ms VDD > VDDQ, VDD-VDDQ < 0.3V The voltage levels on all other pins should not exceed VDD/VDDQ or be below VSS/VSSQ
Impedance ◦ All signal planes must be 50 , single-ended, ±10%. ◦ All signal planes must be 100 , differential ±10%. ◦ All unused via pads must be removed, because they cause unwanted capacitance. Decoupling Parameter ◦ Use 0.1 F in 0402 size to minimize inductance. ◦ Make VTT voltage decoupling close to the DDR3 SDRAM components and pull-up resistors. ◦ Connect decoupling caps between VTT and VDD using a 0.1 uF cap for every other VTT pin. ◦ Use a 0.1F cap and 0.01F cap for every VDDQ pin.
Power ◦ Route GND,1.5 V and 0.75 V as planes. ◦ Route VCCIO for memories in a single split plane with at least a 20-mil (0.020 inches, or 0.508 mm) gap of separation. ◦ Route VTT as islands or 250-mil (6.35-mm) power traces. ◦ Route oscillators and PLL power as islands or 100-mil (2.54-mm) power traces. General Routing ◦ Use 45° angles (not 90° corners). ◦ Disallow critical signals across split planes. ◦ Route over appropriate VCC and GND planes. ◦ Keep signal routing layers close to GND and power planes. ◦ Avoid routing memory signals closer than 0.025 inch (0.635 mm) to memory clocks.
Clock Routing ◦ Route clocks on inner layers with outer-layer run lengths held to under 500 mils (12.7 mm).The maximum length of the first SDRAM to the last SDRAM must not be more than 5 inches (127 mm) or 0.69 tCK at 1.066 GHz ◦ Clocks should maintain a length-matching between clock pairs of ±5 ps or approximately±25 mils (0.635 mm). ◦ Differential clocks should maintain a length-matching between positive (p) and negative (n) signals of ±2 ps or approximately ±10 mils (0.254 mm), routed in parallel. ◦ Space between different pairs should be at least two times the trace width of the differential pair to minimize loss and maximize interconnect density.
Address and Command Routing ◦ Route address and command signals in a daisy chain topology from the first SDRAM to the last SDRAM. The maximum length of the first SDRAM to the last SDRAM must not be more than 5 inches (127 mm) or 0.69 tCK at 1.066 GHz. ◦ Do not route differential clock (CK) and clock enable (CKE) signals close to address signals. External Memory Routing Rules ◦ Match in length all DQ, DQS, and DM signals within a given byte-lane group with a maximum deviation of ±10 ps or approximately ± 50 mils (± 1.27 mm). ◦ Ensure to route all DQ, DQS, and DM signals within a given byte-lane group on the same layer
Termination Rules ◦ Use an external parallel termination of 40 Ohm to VTT at the end of the fly-by daisy chain topology on the addresses and commands. ◦ Keep the length of the traces to the termination to within 0.5 inch (14 mm). ◦ Use resistors with tolerances of 1 to 2%.
Expected to run at 1.2 V or less At clock speeds up to 4266 MT/s Up to 40% Energy Efficient . Discards dual and triple channel approaches in favor of point-to-point where each channel in the memory controller is connected to a single module The first DDR4 memory module was manufactured by Samsung and announced in January 2011.