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The performance based analysis for typical Gaussian and GaussianHalo Doped Double Gate MOSFETs
in conjunction with Normal Doped DG MOSFETs, for which different parameters such as Oxide Thickness,
Ambient Temperature, Gate Material Work Function and Substrate Doping Concentration is varied. This
analysis has been carried out using a TCAD Lab simulation.. From the results obtained, it will be quite
clear that the subthreshold leakage current of the Gaussian and GaussianHalo Doped Double Gate Metal
Oxide Semiconductor FET is relatively lesser. Furthermore the results have been plotted with different
Drain voltage values to enhance the understanding of the physics behind various Doping Profiles in
Double Gate MOSFET. Finally the results has been obtained, analysed and compared. The Possession of
higher Drain current Performance is very acceptable through the rigorous analysis using a TCAD Lab.
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