Be the first to like this
Recently we introduced an approach to increase sharpness of diffusion-junction and implanted-junction
heterorectifiers. The heterorectifiers could by single and as a part of heterobipolar transistors. However
manufacturing p-n-junctions by ion implantation leads to generation of radiation defects in materials of
heterostructure. In this paper we introduce an approach to use an overlayer and optimization of annealing
of radiation defects to decrease quantity of radiation defects.