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International Journal of Electronics and Communication Engineering & Technology (IJECET),
   International Journal of Electronics and Communication
Engineering & Technology 0976 – 6472(Online) Volume 1, Number 1, Sep - Oct (2010), © IAEME
   ISSN 0976 – 6464(Print), ISSN
                                  (IJECET)                           IJECET
ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online)
Volume 1, Number 1, Sep - Oct (2010), pp. 18-24                          ©IAEME
© IAEME, http://www.iaeme.com/ijecet.html

        REDUCTION OF MUTUAL COUPLING BETWEEN
            PATCH ELEMENTS USING SPLIT-RING DGS
                                 Chandan Kumar Ghosh
                     Murshidabad college of Engineering and Technology
                             Berhampore, Murshidabad (W.B)
                              E-mail: mcet_ckg@yahoo.com

                                  Susanta Kumar Parui
                         Bengal Engineering and Science University
                                      Shibpur, India
                                Email: arkapv@yahoo.com

  ABSTRACT
          A defected structure etched in the metallic ground plane effectively disturbs the
  shield current distribution in the ground plane and thus, DGS potentially obtains wide
  reject-band, which meet the emerging application challenges. Microstrip patch antenna
  arrays are very popular for today’s wireless communication system. In this paper a new
  scheme is proposed to reduce the mutual coupling between two elements of a patch
  antenna arrays operated in 5.8 GHz. A split ring DGS cell is placed in between patch
  elements, which enable to reduce the surface wave and able to reduce the mutual
  coupling between them. This method may be adopted to reduce the overall real estate of
  a multi-element patch array system.
  I. INTRODUCTION
          The demand of currently expanding communication systems within finite
  spectrum resources sets lots of stringent requirements on the microwave circuit design. A
  defected structure etched in the metallic ground plane of a microstrip line effectively
  disturbs the shield current distribution in the ground plane and thus, introduces high line
  inductance and capacitance of the microstrip line. Dumbbell shaped defected ground
  structure (DGS) has been proposed by D. Ahn first time and applied successfully to
  design a low pass filter [1-3]. Their frequency characteristics indicated one-pole response
  and modeled by 1st order Butterworth LPF function. They are used for designing all pole


                                              18
International Journal of Electronics and Communication Engineering & Technology (IJECET),
ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online) Volume 1, Number 1, Sep - Oct (2010), © IAEME


type filters. A filter with elliptic function response has attenuation poles and zeros at
finite frequencies and shows sharp transition band. Few DGSs with quasi-elliptic
responses were reported [4-8] in recent time.
        In this work, we are exploring the square split-ring type DGS cell. The frequency
characteristics show an attenuation zero close to the attenuation pole frequency and
therefore modeled it as 3rd order elliptic LPF.                              Moreover, owing to the increased
equivalent inductance and capacitance, the required area for this DGS is seen to be
smaller than the dumbbell DGS. A split ring DGS cell is placed in between patch
elements, which enable to reduce the surface wave and finally reduce the mutual coupling
between them. This method may be adopted to reduce the overall real estate of a multi-
element patch array system.
II. DGS UNDERNEATH A MICROSTRIP LINE
        Figure 1(a) shows our proposed DGS cell etched off on the backside metallic
ground plane underneath a microstrip line. The frequency characteristics are investigated
by CST studio. The different dimensions are considered as b = 1 mm, a = 8 mm, and g =
0.2 mm. A substrate with a dielectric constant of 3 and thickness of 0.75 mm is
considered. The width (w) of the conductor strip is obtained as 1.8 mm, corresponding to
characteristic impedance of 50Ω.
                                                                    5
                                                                    0
                          a
                                                                    -5
                                                                   -10
                                                  M agnitude, dB




                                                                   -15
                                                                   -20
       W
                                                                                                           S11(simu)
                                                                   -25
                                                                                                           S21(simu)
               b                                                   -30
                                                                                                           S21(mea)
                                                                   -35
                                                                                                           S11(mea)
                      g                                            -40
                                                                         1   2    3      4      5      6       7       8
                                                                                      Frequency, GHz

                              (a)                                       (b)
                                 Figure 1(a) schematic of split-ring DGS
                                (b) simulated and measured s-parameters




                                                    19
International Journal of Electronics and Communication Engineering & Technology (IJECET),
ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online) Volume 1, Number 1, Sep - Oct (2010), © IAEME




                                    Ls1                   Ls2




                                                    Lp


                                                    Cp




                  Figure 1 (c) Proposed equivalent circuit of the DGS unit
        From the S-parameters results as shown in Figure 1(b), the cutoff frequency, pole
frequency and insertion losses are obtained as 3.01 GHz, 3.35 GHz and 0.96 dB in
measurement, whereas, the values are 3.03 GHz, 3.37 GHz and 0.75 dB in simulation.
The attenuation zero frequency is observed at 2.79 GHz in simulation and 2.89 in
measurement results.       Thus, S-parameter response exhibits a sharpness factor of
76dB/GHz. The 20 dB rejection-bandwidth is obtained as 3% only and introduces small
amount of insertion loss (0.96 dB) in the pass band. The DGS is modeled by T-network
as shown in Figure 1(c)
III. TWO-ELEMENT PATCH ARRAY INTEGRATED WITH DGS
CELL
        A microstrip line inset fed rectangular patch antenna is designed at centre
frequency of 5.8 GHz on a high dielectric substrate board. A Rogers RO 3010 substrate
having dielectric constant of 10.2, thickness of 1.27 mm and copper thickness of 0.07 mm
is used for simulation. The patch element have length, L=15.3 mm, and width, W=12 mm
as shown in Figure 2. The feed line has a width (h) of 1.2 mm, and inset have length of 4
mm and width of 0.4mm in both side of the feed line. The resonant frequency is observed
at 5.86 GHz with maximum attenuation of 13.6 dB in simulated return loss response as
shown in Figure 3 (a).




                                               20
International Journal of Electronics and Communication Engineering & Technology (IJECET),
ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online) Volume 1, Number 1, Sep - Oct (2010), © IAEME




                                                            W
                                                                                            d
                                                                                                      a



                                              L            Patch-2     b                                         Patch-1

                                                                                            g


                                                                                                      DGS


                                                       h
                                                                                                      Port


                             Figure 2 Schematic view of two-element patch array integrated with DGS cell
                              For the two-element array configuration, the distance between two elements (d) is
taken as 8 mm. A square shaped split-ring DGS unit of side-length (a) of 2.1 mm, width
(b) of 0.4 mm and gap of 0.2 mm is incorporated at centre position in between two
elements as shown in Figure 9. The return loss with DGS is obtained as 12.2 dB at centre
frequency of 5.799 GHz, whereas it is 12.86 dB at centre frequency 5.781 GHz without
DGS. The maximum mutual coupling between two elements is obtained as 9.53 dB due
to DGS where as, it is 8.29 dB without DGS. So, a reduction of 1.24 dB observed when a
DGS cell is incorporated between elements as shown in Figure 3(b) & (c). Also centre
frequency shifted by 180 MHz, when DGS is taken.

                             0
                                                                                                          0
                            -2
                                                                                                      -2
                            -4
                                                                                                      -4
                            -6
 R e tu r n lo s s , d B




                                                                                                      -6
                                                                             R e tu rn lo s s , d B




                            -8                                                                        -8
                           -10                                                                    -10
                           -12                                                                    -12
                           -14                                                                    -14                               w ith DGS
                           -16                                                                    -16                               w ithout DGS
                           -18                                                                    -18
                           -20                                                                    -20
                              5.60 5.65 5.70 5.75 5.80 5.85 5.90 5.95 6.00                           5.60 5.65 5.70 5.75 5.80 5.85 5.90 5.95 6.00
                                             Frequency, GHz                                                          Frequency, GHz


                                             Figure (a) return loss characteristic of single element
                                             Figure (b) return loss of patch array with/without DGS


                                                                                  21
International Journal of Electronics and Communication Engineering & Technology (IJECET),
ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online) Volume 1, Number 1, Sep - Oct (2010), © IAEME


                                              0
                                                           w ith DGS
                                              -5
                                                           w ithout DGS




                       Mutual coupling, dB
                                             -10

                                             -15

                                             -20

                                             -25

                                             -30
                                                5.60    5.65   5.70       5.75   5.80   5.85   5.90
                                                                  Frequency, GHz

 Figure 3 S-parameters of the microstrip patch array (c) Mutual coupling betn elements
                                  with/without DGS
      The simulated farfield patterns are shown in Fig. 4. The side lobe level of
maximum -5.9 dB is obtained due to inclusion of DGS as observed in simulated results in
Figure 4.




                                                       Figure (a) Directivity of Phi




                                                                       22
International Journal of Electronics and Communication Engineering & Technology (IJECET),
ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online) Volume 1, Number 1, Sep - Oct (2010), © IAEME




               Figure 4 Far-field patterns at 5.8 GHz (b) Directivity of theta
IV CONCLUSIONS
        The frequency characteristics of proposed split-ring DGS cell show very sharp
transition knee due to attenuation zero close to attenuation pole frequency. The DGS cell
is modeled by 3rd order elliptic lowpass filter function. A microstrip line inset fed two
element rectangular patch antenna arrays is designed at centre frequency of 5.8 GHz on a
high dielectric substrate board. For the array configuration, the distance between two
elements is taken less to observe the high mutual coupling. In this scheme, the mutual
coupling has been reduced to some extent by incorporated a split-ring DGS cell in
between antenna elements. Also the centre frequency is shifted due to slowwave factor.
The simulated farfield patterns show an increase of side lobe level due to inclusion of
DGS. The work may be extended for multi element array system in near future.
REFERENCES
1. Kim C.S.,.Park J.S, Ahn D., Lim J.B., “A Novel One Dimensional Periodic Defected
   Ground Structure For Planar Circuits,” IEEE Microwave And Guided Wave Letters,
   Vol. 10, No. 4, pp.131-133, 2000
2. D. Ahn, J.S.Park, C.S.Kim, Kim, Y Qian And T. Itoh, “A Design Of The Low pass
   Filter Using The Novel Microstrip Defected Ground Structure,” IEEE Trans. On
   Microwave Theory And Techniques, Vol. 49, No. 1, pp. 86-93, 2001


                                               23
International Journal of Electronics and Communication Engineering & Technology (IJECET),
ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online) Volume 1, Number 1, Sep - Oct (2010), © IAEME


3. Lim J., Kim C., Lee Y., Ahn D.,Nam S., “Design of Low pass Filters Using Defected
   Ground Structure and compensated microstrip Line,” Electronics Letter, Vol. 38, No.
   25, pp.1357-1358, 2002
4. Parui Kumar S., Das, S., “A New Defected Ground Structure For Different Microstrip
   Circuit Applications,” Radio engineering, Vol.16, No.1, pp.16-22, 2007
5. S. K.Parui, and S. Das, “A new Defected Ground Structure with elliptical response and
   it’s application as low pass filter,” Intern Journal of Electronics and Communications
   (AEU), Elsevier, vol 63, pp.483-490, 2009
6. Susanta Kumar Parui and Santanu Das, “Modeling of Split-ring Type Defected
   Ground Structure and It’s Filtering Applications,” Journal of Microwaves, Optoele,
   Electromagnetic Applications, vol 8 no 1, pp.6-12, 2009
7. Susanta Kumar Parui and Santanu Das, “Modeling of Modified Split-ring Type
   Defected Ground Structure and Its Application as Bandstop Filter,” Radio engineering
   Journal, vol 18, no 2, pp.149-154, June 2009
8. Susanta Kumar Parui, Tamosi Moyra and Santanu Das, “Quasi-elliptic filter
   characteristics of an asymmetric defected ground structure,” International Journal of
   Electronics, Taylor & Francis publication, vol 96, no 9, pp.915-924, Sept. 2009




                                               24

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Patch Antenna Array Mutual Coupling Reduction Using Split-Ring DGS

  • 1. International Journal of Electronics and Communication Engineering & Technology (IJECET), International Journal of Electronics and Communication Engineering & Technology 0976 – 6472(Online) Volume 1, Number 1, Sep - Oct (2010), © IAEME ISSN 0976 – 6464(Print), ISSN (IJECET) IJECET ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online) Volume 1, Number 1, Sep - Oct (2010), pp. 18-24 ©IAEME © IAEME, http://www.iaeme.com/ijecet.html REDUCTION OF MUTUAL COUPLING BETWEEN PATCH ELEMENTS USING SPLIT-RING DGS Chandan Kumar Ghosh Murshidabad college of Engineering and Technology Berhampore, Murshidabad (W.B) E-mail: mcet_ckg@yahoo.com Susanta Kumar Parui Bengal Engineering and Science University Shibpur, India Email: arkapv@yahoo.com ABSTRACT A defected structure etched in the metallic ground plane effectively disturbs the shield current distribution in the ground plane and thus, DGS potentially obtains wide reject-band, which meet the emerging application challenges. Microstrip patch antenna arrays are very popular for today’s wireless communication system. In this paper a new scheme is proposed to reduce the mutual coupling between two elements of a patch antenna arrays operated in 5.8 GHz. A split ring DGS cell is placed in between patch elements, which enable to reduce the surface wave and able to reduce the mutual coupling between them. This method may be adopted to reduce the overall real estate of a multi-element patch array system. I. INTRODUCTION The demand of currently expanding communication systems within finite spectrum resources sets lots of stringent requirements on the microwave circuit design. A defected structure etched in the metallic ground plane of a microstrip line effectively disturbs the shield current distribution in the ground plane and thus, introduces high line inductance and capacitance of the microstrip line. Dumbbell shaped defected ground structure (DGS) has been proposed by D. Ahn first time and applied successfully to design a low pass filter [1-3]. Their frequency characteristics indicated one-pole response and modeled by 1st order Butterworth LPF function. They are used for designing all pole 18
  • 2. International Journal of Electronics and Communication Engineering & Technology (IJECET), ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online) Volume 1, Number 1, Sep - Oct (2010), © IAEME type filters. A filter with elliptic function response has attenuation poles and zeros at finite frequencies and shows sharp transition band. Few DGSs with quasi-elliptic responses were reported [4-8] in recent time. In this work, we are exploring the square split-ring type DGS cell. The frequency characteristics show an attenuation zero close to the attenuation pole frequency and therefore modeled it as 3rd order elliptic LPF. Moreover, owing to the increased equivalent inductance and capacitance, the required area for this DGS is seen to be smaller than the dumbbell DGS. A split ring DGS cell is placed in between patch elements, which enable to reduce the surface wave and finally reduce the mutual coupling between them. This method may be adopted to reduce the overall real estate of a multi- element patch array system. II. DGS UNDERNEATH A MICROSTRIP LINE Figure 1(a) shows our proposed DGS cell etched off on the backside metallic ground plane underneath a microstrip line. The frequency characteristics are investigated by CST studio. The different dimensions are considered as b = 1 mm, a = 8 mm, and g = 0.2 mm. A substrate with a dielectric constant of 3 and thickness of 0.75 mm is considered. The width (w) of the conductor strip is obtained as 1.8 mm, corresponding to characteristic impedance of 50Ω. 5 0 a -5 -10 M agnitude, dB -15 -20 W S11(simu) -25 S21(simu) b -30 S21(mea) -35 S11(mea) g -40 1 2 3 4 5 6 7 8 Frequency, GHz (a) (b) Figure 1(a) schematic of split-ring DGS (b) simulated and measured s-parameters 19
  • 3. International Journal of Electronics and Communication Engineering & Technology (IJECET), ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online) Volume 1, Number 1, Sep - Oct (2010), © IAEME Ls1 Ls2 Lp Cp Figure 1 (c) Proposed equivalent circuit of the DGS unit From the S-parameters results as shown in Figure 1(b), the cutoff frequency, pole frequency and insertion losses are obtained as 3.01 GHz, 3.35 GHz and 0.96 dB in measurement, whereas, the values are 3.03 GHz, 3.37 GHz and 0.75 dB in simulation. The attenuation zero frequency is observed at 2.79 GHz in simulation and 2.89 in measurement results. Thus, S-parameter response exhibits a sharpness factor of 76dB/GHz. The 20 dB rejection-bandwidth is obtained as 3% only and introduces small amount of insertion loss (0.96 dB) in the pass band. The DGS is modeled by T-network as shown in Figure 1(c) III. TWO-ELEMENT PATCH ARRAY INTEGRATED WITH DGS CELL A microstrip line inset fed rectangular patch antenna is designed at centre frequency of 5.8 GHz on a high dielectric substrate board. A Rogers RO 3010 substrate having dielectric constant of 10.2, thickness of 1.27 mm and copper thickness of 0.07 mm is used for simulation. The patch element have length, L=15.3 mm, and width, W=12 mm as shown in Figure 2. The feed line has a width (h) of 1.2 mm, and inset have length of 4 mm and width of 0.4mm in both side of the feed line. The resonant frequency is observed at 5.86 GHz with maximum attenuation of 13.6 dB in simulated return loss response as shown in Figure 3 (a). 20
  • 4. International Journal of Electronics and Communication Engineering & Technology (IJECET), ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online) Volume 1, Number 1, Sep - Oct (2010), © IAEME W d a L Patch-2 b Patch-1 g DGS h Port Figure 2 Schematic view of two-element patch array integrated with DGS cell For the two-element array configuration, the distance between two elements (d) is taken as 8 mm. A square shaped split-ring DGS unit of side-length (a) of 2.1 mm, width (b) of 0.4 mm and gap of 0.2 mm is incorporated at centre position in between two elements as shown in Figure 9. The return loss with DGS is obtained as 12.2 dB at centre frequency of 5.799 GHz, whereas it is 12.86 dB at centre frequency 5.781 GHz without DGS. The maximum mutual coupling between two elements is obtained as 9.53 dB due to DGS where as, it is 8.29 dB without DGS. So, a reduction of 1.24 dB observed when a DGS cell is incorporated between elements as shown in Figure 3(b) & (c). Also centre frequency shifted by 180 MHz, when DGS is taken. 0 0 -2 -2 -4 -4 -6 R e tu r n lo s s , d B -6 R e tu rn lo s s , d B -8 -8 -10 -10 -12 -12 -14 -14 w ith DGS -16 -16 w ithout DGS -18 -18 -20 -20 5.60 5.65 5.70 5.75 5.80 5.85 5.90 5.95 6.00 5.60 5.65 5.70 5.75 5.80 5.85 5.90 5.95 6.00 Frequency, GHz Frequency, GHz Figure (a) return loss characteristic of single element Figure (b) return loss of patch array with/without DGS 21
  • 5. International Journal of Electronics and Communication Engineering & Technology (IJECET), ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online) Volume 1, Number 1, Sep - Oct (2010), © IAEME 0 w ith DGS -5 w ithout DGS Mutual coupling, dB -10 -15 -20 -25 -30 5.60 5.65 5.70 5.75 5.80 5.85 5.90 Frequency, GHz Figure 3 S-parameters of the microstrip patch array (c) Mutual coupling betn elements with/without DGS The simulated farfield patterns are shown in Fig. 4. The side lobe level of maximum -5.9 dB is obtained due to inclusion of DGS as observed in simulated results in Figure 4. Figure (a) Directivity of Phi 22
  • 6. International Journal of Electronics and Communication Engineering & Technology (IJECET), ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online) Volume 1, Number 1, Sep - Oct (2010), © IAEME Figure 4 Far-field patterns at 5.8 GHz (b) Directivity of theta IV CONCLUSIONS The frequency characteristics of proposed split-ring DGS cell show very sharp transition knee due to attenuation zero close to attenuation pole frequency. The DGS cell is modeled by 3rd order elliptic lowpass filter function. A microstrip line inset fed two element rectangular patch antenna arrays is designed at centre frequency of 5.8 GHz on a high dielectric substrate board. For the array configuration, the distance between two elements is taken less to observe the high mutual coupling. In this scheme, the mutual coupling has been reduced to some extent by incorporated a split-ring DGS cell in between antenna elements. Also the centre frequency is shifted due to slowwave factor. The simulated farfield patterns show an increase of side lobe level due to inclusion of DGS. The work may be extended for multi element array system in near future. REFERENCES 1. Kim C.S.,.Park J.S, Ahn D., Lim J.B., “A Novel One Dimensional Periodic Defected Ground Structure For Planar Circuits,” IEEE Microwave And Guided Wave Letters, Vol. 10, No. 4, pp.131-133, 2000 2. D. Ahn, J.S.Park, C.S.Kim, Kim, Y Qian And T. Itoh, “A Design Of The Low pass Filter Using The Novel Microstrip Defected Ground Structure,” IEEE Trans. On Microwave Theory And Techniques, Vol. 49, No. 1, pp. 86-93, 2001 23
  • 7. International Journal of Electronics and Communication Engineering & Technology (IJECET), ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online) Volume 1, Number 1, Sep - Oct (2010), © IAEME 3. Lim J., Kim C., Lee Y., Ahn D.,Nam S., “Design of Low pass Filters Using Defected Ground Structure and compensated microstrip Line,” Electronics Letter, Vol. 38, No. 25, pp.1357-1358, 2002 4. Parui Kumar S., Das, S., “A New Defected Ground Structure For Different Microstrip Circuit Applications,” Radio engineering, Vol.16, No.1, pp.16-22, 2007 5. S. K.Parui, and S. Das, “A new Defected Ground Structure with elliptical response and it’s application as low pass filter,” Intern Journal of Electronics and Communications (AEU), Elsevier, vol 63, pp.483-490, 2009 6. Susanta Kumar Parui and Santanu Das, “Modeling of Split-ring Type Defected Ground Structure and It’s Filtering Applications,” Journal of Microwaves, Optoele, Electromagnetic Applications, vol 8 no 1, pp.6-12, 2009 7. Susanta Kumar Parui and Santanu Das, “Modeling of Modified Split-ring Type Defected Ground Structure and Its Application as Bandstop Filter,” Radio engineering Journal, vol 18, no 2, pp.149-154, June 2009 8. Susanta Kumar Parui, Tamosi Moyra and Santanu Das, “Quasi-elliptic filter characteristics of an asymmetric defected ground structure,” International Journal of Electronics, Taylor & Francis publication, vol 96, no 9, pp.915-924, Sept. 2009 24