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KnowMade
    Newsletter
  Research Activities of
Semiconductor Companies

        March 2010
Information
  This    monthly   newsletter
  brings to you an insight into
  the research activities of
                  ...
ALCATEL-THALES III-V LAB & SOITEC/PICOGIGA

     LP MOCVD growth of InAlN/GaN HEMT heterostructure: comparison of sapphire...
FUJITSU

     Photodetection around 10 μm wavelength using s-p transitions in InAs/AlAs/AlGaAs self-
     assembled quantu...
IQE

     Molecular beam epitaxial growth and properties of GaAs pseudomorphic high ele ctron
     mobility transistors on...
LUMILOG

     Electrical behaviour of lateral Al/n-GaN/Al structures

     Abstract : The electrical behaviour of lateral ...
NTT

     All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on
     chip

     Abstr...
SAMSUNG

     High Electrical Performance of Wet-Processed Indium Zinc Oxide Thin-Film Transistors

     Abstract : We dev...
UNITED MICROELECTRONICS CORP. (UMC)

     Electrical characteristics of nMOSFETs fabricated on hybri d orientation substra...
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RASCmar2010

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  1. 1. KnowMade Newsletter Research Activities of Semiconductor Companies March 2010
  2. 2. Information This monthly newsletter brings to you an insight into the research activities of CONTENTS semiconductor companies. Free subscription here Alcatel-Thales III-V Lab & Soitec/Picogiga .................................................................................... 3 LP MOCVD growth of InAlN/GaN HEMT heterostructure: comparison of Custom newsletter sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device KnowMade can design a applications............................................................................................................................ 3 custom newsletter according Applied Materials .................................................................................................................................... 3 to your own needs: patents, scientific activities, calls for Effect of composition and chemical bonding on the band gap and band projects, events, etc. offsets to Si of HfxSi1−xO2 (N) films ............................................................................. 3 Fujitsu .......................................................................................................................................................... 4 contact@knowmade.fr Photodetection around 10 μm wavelength using s-p transitions in InAs/AlAs/AlGaAs self-assembled quantum dots .................................................... 4 IBM ................................................................................................................................................................ 4 KNOWMADE High-k/Metal-Gate Fully Depleted SOI CMOS With Single-Silicide Schottky Source/Drain With Sub-30-nm Gate Length............................................................... 4 KnowMade is a competitive Intel .............................................................................................................................................................. 4 intelligence private company Fast All-Transparent Integrated Circuits Based on Indium Gallium Zinc Oxide providing technology watch Thin-Film Transistors ........................................................................................................ 4 services for R&D projects in IQE ................................................................................................................................................................. 5 innovative sectors: -semiconductor materials Molecular beam epitaxial growth and properties of GaAs pseudomorphic -micro & nanotechnology high electron mobility transistors on silicon composite substrates ................ 5 -biotechnology Kyma ............................................................................................................................................................ 5 -pharmacology Inclined dislocation-pair relaxation mechanism in homoepitaxial green -environment GaInN/GaN light-emitting diodes ................................................................................... 5 etc. Carrier velocity in InAlN/AlN/GaN heterostructure field effect transis tors on Fe-doped bulk GaN substrates ........................................................................................ 5 Our mission is to provide you high added value informations Lumilog ....................................................................................................................................................... 6 in order to improve your Electrical behaviour of lateral Al/n-GaN/Al structures ........................................ 6 innovation process. A Ph.D NEC ................................................................................................................................................................ 6 team, specializing in your Charged and neutral biexciton–exciton cascade in a single quantum dot domain, identifies, collects and within a photonic bandgap ............................................................................................... 6 analyzes in the best sources Nitronex ...................................................................................................................................................... 6 (patents databases, scientific publications, legislation, web, AlGaN/GaN lateral field-effect rectifier with intrinsic forward current etc.) the most relevant limiting capability ............................................................................................................... 6 informations for your projects. NTT ............................................................................................................................................................... 7 All-silicon sub-Gb/s telecom detector with low dark current and high KnowMade covers a wide quantum efficiency on chip .............................................................................................. 7 range of technology watch Panasonic ................................................................................................................................................... 7 services: newsletter, web- based collaborative platform, Reliability evaluation for Blu-Ray laser diodes ....................................................... 7 technology analysis, state of QinetiQ ........................................................................................................................................................ 7 the art, patent classification, Strong dependence of spin dynamics on the orientation of an external scientific portfolio analysis, magnetic field for InSb and InAs .................................................................................... 7 identification of experts, Samsung ...................................................................................................................................................... 8 competitors and partners, technology trends, etc. High Electrical Performance of Wet-Processed Indium Zinc Oxide Thin-Film Transistors ............................................................................................................................. 8 www.knowmade.fr Thermoelectric heating of Ge2Sb2Te5 in phase change memory devices ...... 8 Toyota .......................................................................................................................................................... 8 Defect formation and phase stability of Cu2ZnSnS4 photovoltaic material .. 8 United Microelectronics Corp. (UMC) .............................................................................................. 9 Electrical characteristics of nMOSFETs fabricated on hybrid orientation substrate with amorphization/templated recrystallization method ............... 9 March 2010 | http://www.knowmade.fr 2|P a g e
  3. 3. ALCATEL-THALES III-V LAB & SOITEC/PICOGIGA LP MOCVD growth of InAlN/GaN HEMT heterostructure: comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications Abstract : In this paper we report on low-pressure metalorganic vapour deposition of InAlN/GaN heterostructures grown on different substrates (Sapphire, bulk SiC, composite SiCopSiC) for HEMT applications, and on first device performances obtained with these heterostructures. Optimisation of the crystal growth on each kind of substrate has led to InAlN/GaN HEMT heterostructures grown on bulk SiC and on composite SiCopSiC substrates which are successfully compared, in terms of material quality, to the standard GaAlN/GaN HEMT heterostructures grown on bulk SiC substrates. First devices based on InAlN/GaN heterostructures grown on bulk SiC exhibit very good microwave performances, with output power of 10.3 W/mm at 10 GHz, similar to those obtained with GaAlN/GaN heterostructures, confirming the promising potential of InAlN material. Read more … Source : Physica Status Solidi c Back to contents APPLIED MATERIALS Effect of composition and chemical bonding on the band gap and band offsets to Si o f HfxSi1−xO2 (N) films Abstract : The energy band gap, alignment with Si and the chemical bonding of 3–4 nm thick HfxSi1−xO2 films with 0 ≤ x ≤ 1 were investigated as a function of composition. Nitrogen was introduced by N plasma incorporation into Hf xSi1−xO2 films with x = 0.3, 0.5, and 0.7 grown on a SiO2/Si stack by metal-organic chemical vapor deposition. The structure of the dielectric films was characterized by high resolution transmission electron microscopy. X-ray photoelectron spectroscopy was used to determine the band gap, as well as the energy band alignment with Si and the chemical structure of the films. The amount of Si in the films and the incorporated N were found to influence the band gap and the band alignment with Si. The band gap was found to gradually decrease with the increase in Hf content, from a value of 8.9 eV (for pure SiO2) to a value of 5.3 eV (for pure HfO2). These changes were accompanied by a reduction of the valance band offset relative to the Si substrate, from a value of 4.8 eV (for pure SiO2) to a value of 1.5 eV (for pure HfO2). In addition, we have found that the presence of Hf–N bonds increases the conduction band offset from a value of 2.7 eV, which was obtained when only Hf–O bonds are present, to a value of 3.1 eV. The changes in the band structure and band alignment of Hf-silicate films are explained based on the chemical structure of the nitrided Hf-silicate films. Read more … Source : Journal of Applied Physics Back to contents March 2010 | http://www.knowmade.fr 3|P a g e
  4. 4. FUJITSU Photodetection around 10 μm wavelength using s-p transitions in InAs/AlAs/AlGaAs self- assembled quantum dots Abstract : We propose a quantum dot infrared photodetector (QDIP) having distinct sensitivity to mutually orthogonal in-plane polarized infrared radiation, and applicable to practical infrared (IR) imaging applications. Our QDIP has either an InAs/AlAs/AlGaAs or an AlAs/InAs/AlAs/AlGaAs structure in which extra-thin AlAs layers were introduced underneath the AlGaAs buffer layer to strongly confine the carriers and also to enhance the dot density before the Stranski–Krastanov mode growth of InAs quantum dots was carried out. At 80 K, the detector has high sensitivity to in- plane orthogonally polarized infrared light, and photocurrent responsivity peaks of up to 230 mA/W associated with distinct mutually orthogonal polar lights which were observed at a wavelength of around 10.0 μm. Read more … Source : Journal of Applied Physics Back to contents IBM High-k/Metal-Gate Fully Depleted SOI CMOS With Single-Silicide Schottky Source/Drain With Sub-30-nm Gate Length Abstract : Schottky source/drain (S/D) MOSFETs hold the promise for low series resistance and extremely abrupt junctions, providing a path for device scaling in conjunction with a low Schottky barrier height (SBH). A S/D junction SBH approaching zero is also needed to achieve a competitive current drive. In this letter, we demonstrate a CMOS process flow that accomplishes a reduction of the S/D SBH for nFET and pFET simultaneously using implants into a common NiPt silicide, followed by a low-temperature anneal (500°C–600°C). These devices have high-k/metal gate and fully depleted extremely thin SOI with sub-30-nm gate length. Read more … Source : Electron Device Letters Back to contents INTEL Fast All-Transparent Integrated Circuits Based on Indium Gallium Zinc Oxide Thin -Film Transistors Abstract : We describe the fabrication and characterization of visible transparent small-scale indium gallium zinc oxide (IGZO) integrated circuits. The IGZO channel and indium tin oxide (ITO) contacts and interconnects were pulsed laser deposited at room temperature. Low-temperature (200°C) atomic-layer-deposited Al2O3 was used as the gate dielectric in bottom-gated thin-film transistors with field-effect mobility near 15 cm²/Vs. Logic inverters and ring oscillators were fabricated and characterized, with operations at frequencies as high as 2.1 MHz, corresponding to a propagation delay of less than 48 ns/stage with a supply voltage of 25 V. To the best of our knowledge, these are the fastest all- transparent oxide semiconductor circuits reported to date. Read more … Source : Electron Device Letters Back to contents March 2010 | http://www.knowmade.fr 4|P a g e
  5. 5. IQE Molecular beam epitaxial growth and properties of GaAs pseudomorphic high ele ctron mobility transistors on silicon composite substrates Abstract : GaAs pseudomorphic high electron mobility transistor (PHEMT) structures were grown by molecular beam epitaxy on germanium substrates and composite silicon template wafers incorporating silicon and germanium transferred layers. Windows were etched down to the buried germanium layer and subsequent blanket material growth resulted in single crystal growth in the windows and polycrystalline growth on the top SiO2 surface. Wire growth was eliminated at the window edges and on the top SiO2 surface. Secondary ion mass spectrometry measurements and transmission electron micrographs of GaAs grown on germanium indicated an abrupt GaAs–Ge interface with little penetration of antiphase boundaries or other defects into the GaAs layer. For PHEMT material grown on silicon template wafers, a surface roughness of 8 Å was measured by atomic force microscopy. The room temperature photoluminescence intensity of the InGaAs channel in the PHEMT structure was equivalent to that grown on GaAs substrates. Measured PHEMT mobilities and sheet densities were comparable to those obtained on GaAs substrates. Transistors were fabricated with 0.25 µm gates. The maximum dc current density, 520 mA/mm, and transconductance, 360 mS/mm, were very similar to devices fabricated on GaAs substrates. Read more … Source : Journal of Vacuum Science and Technology B Back to contents KYMA Inclined dislocation-pair relaxation mechanism in homoepitaxial green GaInN/GaN light - emitting diodes Abstract : The creation of symmetrical pairs of inclined dislocations was observed in the GaInN/GaN quantum wells (QWs) of c-axis grown green light-emitting diodes (LEDs) on low-defect density bulk GaN substrate, but not in green LEDs on sapphire substrate with high threading dislocation (TD) density. Pairs of dislocations start within 20 nm of the same QW and incline 18°–23° toward two opposite ⟨1-100⟩ directions or in a 120° pattern. We propose that in the absence of TDs, partial strain relaxation of the QWs drives the defect formation by removal of lattice points between the two dislocation cores. In spite of those inclined dislocation pairs, the light output power of such green LEDs on GaN is about 25% higher than in LEDs of similar wavelength on sapphire. Read more … Source : Physical Review B Back to contents Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe -doped bulk GaN substrates Abstract : We report microwave characteristics of field effect transistors employing InAlN/AlN/GaN heterostructures grown on low-defect-density bulk Fe-doped GaN substrates. We achieved unity current gain cutoff frequencies of 14.3 and 23.7 GHz for devices with gate lengths of 1 and 0.65 μm, respectively. Measurements as a function of applied bias allow us to estimate the average carrier velocity in the channel to be ∼ 1.0×107 cm/sec for a 1 μm device. Additionally, we found nearly no gate lag in the devices, which is considered a precondition for good performance under large signal operation. Read more … Source : Applied Physics Letters Back to contents March 2010 | http://www.knowmade.fr 5|P a g e
  6. 6. LUMILOG Electrical behaviour of lateral Al/n-GaN/Al structures Abstract : The electrical behaviour of lateral Al/n-GaN/Al structures have been studied by current-voltage measurements between a large pad with an area of 22 mm2 and small contacts with different areas in the range of 0.01- 1 mm2. The results indicated that near room temperature the current was limited by the GaN layer exhibiting linear I-V characteristics for large contacts around 1 mm2, while it was contact limited for small contacts around 0.1 mm2 and below. This indicates that the same metal contact can behave as ohmic or rectifying depending on the contact area and so on the ratio of contact resistance to the series resistance of the structure. Near liquid nitrogen temperature, the current through the lateral Al/n-GaN/Al structures was limited by space charges. The Al/n-GaN contacts exhibited a very low Schottky barrier height below or around 0.2 eV. A new possible mechanism responsible for the temperature dependence of the ideality factor is proposed. Read more … Source : Applied Surface Science Back to contents NEC Charged and neutral biexciton–exciton cascade in a single quantum dot within a photonic bandgap Abstract : We investigate the recombination dynamics of positively charged and neutral biexcitons and excitons in a single InAs/GaAs quantum dot (QD) within a two-dimensional (2D) photonic bandgap (PBG). The 2D PBG makes the exciton lifetime four times longer and enhances photon-extraction efficiency compared to those without the PBG. Photon cross-correlation measurements demonstrate the cascade emissions of both charged and neutral biexcitons– excitons from the same QD. In the charged case, a hole in the p-shell relaxes into the s-shell between the cascade, and the corresponding transition is confirmed based on the spin configuration. The long exciton lifetime with the PBG helps us to reveal the spin dynamics that did not clearly appear in intrinsic QDs. Read more … Source : Physica E: Low-dimensional Systems and Nanostructures Back to contents NITRONEX AlGaN/GaN lateral field-effect rectifier with intrinsic forward current limiting capability Abstract : An AlGaN/GaN lateral field-effect rectifier with intrinsic ON-state current limiting capability is demonstrated by adding a Schottky contact metal (length of LD) beyond the ohmic contact region at the cathode electrode. The onset of the current limiting function is self-activated when the voltage drop across the two-dimensional gas (2DEG) channel under the Schottky contact reaches the pinch-off voltage of the as-grown AlGaN/GaN heterojunction. With LD=2 µm and a drift region length of 7 µm, the proposed lateral rectifier exhibited an ON-state current that was self-limited at 1.56 kA/cm2, while achieving a reverse breakdown voltage of 347 V at a 1mA/mm leakage current. Read more … Source : Electronics Letters Back to contents March 2010 | http://www.knowmade.fr 6|P a g e
  7. 7. NTT All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip Abstract : We demonstrate channel selective 0.1-Gb/s photoreceiver operation at telecom wavelength using a silicon high-Q photonic crystal nanocavity with a laterally integrated p-i-n diode. Due to the good crystal property of silicon the measured dark current is only 15 pA. The linear and nonlinear characteristics are investigated in detail, in which we found that the photocurrent is enhanced of more than 105 due to the ultrahigh-Q (Q ≃ 105). With the help of two-photon absorption, which is visible at a surprisingly low input power of 10 −8 W, the quantum efficiency of this device reaches ∼ 10%. Read more … Source : Applied Physics Letters Back to contents PANASONIC Reliability evaluation for Blu-Ray laser diodes Abstract : With this paper we describe an extensive analysis of the reliability of InGaN-based laser diodes, emitting at 405 nm. These devices have excellent characteristics for application in the next-generation optical data storage systems. The analysis aims at describing the degradation process, as well as at investigating the role of current in determining the degradation rate. The results obtained within this paper suggest that the degradation of the laser diodes is correlated to the increase in the non-radiative recombination rate, with subsequent worsening of the optical properties of the devices. Furthermore, our findings support the hypothesis that current is the main driving force for degradation, while temperature and optical power play only a limited role in determining the degradation kinetics. Read more … Source : Microelectronics Reliability Back to contents QINETIQ Strong dependence of spin dynamics on the orientation of an external magnetic field for InSb and InAs Abstract : Electron spin relaxation times have been measured in InSb and InAs epilayers in a moderate (<4T) external magnetic field. A strong and opposite field dependence of the spin lifetime was observed for longitudinal (Faraday) and transverse (Voigt) configuration. In the Faraday configuration the spin lifetime increases because the D’yakonov–Perel’ dephasing process is suppressed. At the high field limit the Elliot–Yafet spin flip relaxation process dominates, enabling its direct determination. Conversely, as predicted theoretically for narrow band gap semiconductors, an additional efficient spin dephasing mechanism dominates in the Voigt configuration significantly decreasing the electron spin lifetime with increasing field. Read more … Source : Applied Physics Letters Back to contents March 2010 | http://www.knowmade.fr 7|P a g e
  8. 8. SAMSUNG High Electrical Performance of Wet-Processed Indium Zinc Oxide Thin-Film Transistors Abstract : We developed thin-film transistors (TFTs) that use solution-processed amorphous indium zinc oxide for the channels in an all-photolithographic process. The transistors, which operate in depletion mode, have excellent transfer characteristics, including saturation mobility of 6.57 cm²/Vs, threshold voltages of -0.30 V, turn-on voltages of -1.50 V, on/off ratios of 10^9, and inverse subthreshold slopes of 0.15 V/dec. We measured the time, temperature, gate voltage, and drain-voltage dependence of the threshold voltage shift, which was 2.16 V under stress conditions. This is nearly the same as that of conventional amorphous silicon TFTs. Read more … Source : Electron Device Letters Back to contents Thermoelectric heating of Ge2Sb2Te5 in phase change memory devices Abstract : We report on the demonstration of the active thermoelectric application to nanometer-scaled semiconductor devices. The thermoelectric heating already exists during programming in conventional phase change memory (PRAM) cells, which is only a minor supplement to Joule heating. Here, by rigorously designing devices, we have demonstrated an unprecedentedly high efficiency of PRAM, where the majority of the heat is supplied by the thermoelectric effect. Read more … Source : Applied Physics Letters Back to contents TOYOTA Defect formation and phase stability of Cu2ZnSnS4 photovoltaic material Abstract : First-principles studies of the phase stability of and defect formation in Cu 2ZnSnS4 (CZTS) are performed. We show that CZTS is the thermodynamically stable phase for a rather small confined domain of chemical potentials. Even slight deviations from the optimal growth conditions will therefore result in the formation of other sulfidic precipitates, including ZnS, Cu2SnS3, SnS, SnS2, and CuS. In particular, under the prevalent experimental Cu-poor and Zn-rich growth conditions ZnS is the main competing phase. Furthermore, the calculations unambiguously predict that Cu at the Zn site is the most stable defect in the entire stability range of CZTS. This correlates with the experimental observation that CZTS is an intrinsic p-type semiconductor. Read more … Source : Physical Review B Back to contents March 2010 | http://www.knowmade.fr 8|P a g e
  9. 9. UNITED MICROELECTRONICS CORP. (UMC) Electrical characteristics of nMOSFETs fabricated on hybri d orientation substrate with amorphization/templated recrystallization method Abstract : The use of hybrid orientation technology (HOT) with direct silicon bond (DSB) wafers consisting of a (1 1 0) crystal orientation layer bonded to a bulk (1 0 0) handle wafer provides promising opportunities for easier migration of bulk CMOS designs to higher performance materials. However, the material quality of nMOSFETs regions, which has been undergone amorphization/templated recrystallization (ATR) process for transforming the Si surface into (1 0 0) orientation, is still a concern because the ATR-induced defects (i.e., dislocation loops or threads) at the recrystallization layer, could degrade gate oxide integrity. In this paper, we report an investigation of charge pumping and low- frequency (1/f) noise in HOT nMOSFETs. Devices with the increased anneal time brought out a significant reduction in the charge pumping current and 1/f noise, which indicates ATR-induced defects were suppressed and consequently the “low-trap-density” of the Si/SiO2 interface. Finally, for the first time, the behavior of 1/f noise for HOT nMOSFETs was investigated, and could be described by a unified model, i.e. a combination of carrier-number fluctuations and mobility fluctuations. Read more … Source : Microelectronics Reliability Back to contents KnowMade S.A.R.L. 2405 route des Dolines, BP 65 06560 Valbonne Sophia Antipolis France March 2010 | http://www.knowmade.fr 9|P a g e

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