CVDSim for Modeling of Epitaxy
                 Success Stories


                              For more information see
 ...
MOVPE process with reduced parasitic deposition


                                                                        ...
Optimization of InGaN-based LED growth process


                                                                         ...
Growth of AlGaN with high growth rate and composition
                                                                    ...
Cooperation with AIXTRON AG


                                                            Modeling is actively used for th...
AlGaN growth efficiency: insight using modeling




                                                                      ...
Hydrogen interaction with III-nitrides




                                                      Ga coverage vs NH3 partia...
Surface quality: pinhole density reduction




       We suggest strategies for the pinhole density
         decrease and ...
Surface quality: growth conditions and surface morphology



                                                             ...
HVPE process/reactor optimization


                                                                          Modification...
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CVDSim for Modeling of Epitaxy . Success Stories

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Examples of successful application of CVDSim software for modeling of epitaxy.

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CVDSim for Modeling of Epitaxy . Success Stories

  1. 1. CVDSim for Modeling of Epitaxy Success Stories For more information see www.str-soft.com/products/cvdsim/ STR Group Ltd. www.str-soft.com 2010
  2. 2. MOVPE process with reduced parasitic deposition The use of the inverted precursor supply allows 40 runs of 1.5 mm thick GaN without removing parasitic deposits instead of 10 growth runs for the conventional growth process Deposition rate over the ceiling (modeling results) Thickness mapping: from convex to concave profile µm/h µm/h Copyright © 2010 STR Group Ltd. All rights reserved www.str-soft.com
  3. 3. Optimization of InGaN-based LED growth process Combination of simulation and experimental analysis has been applied to improve the performance of the existing reactors and to develop a novel reactor concept Contour lines of indium composition Copyright © 2010 STR Group Ltd. All rights reserved www.str-soft.com
  4. 4. Growth of AlGaN with high growth rate and composition 5,5 insitu SR 5,0 XRD 4,5 h = 6mm growth rate (µm/h) 4,0 3,5 3,0 2,5 2,0 1,5 1,0 h = 15mm Reducing 0,5 TMGa 0,0 0,0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9 1,0 TMAl / (TMAl +TMGa) molar fraction Reproducible growth of AlGaN in the entire compositional range has been achieved with the growth rate above 3 µm/h 2 50 1.5 40 growth rate, m/h CVDSim has been applied to Al content, % 1 30 analyze the effect of operating 20 conditions and reactor height 0.5 experiment (SR) experiment (XRD) during AlGaN MOVPE experiment 10 experiment (PL) computation (AlN particles) computation (AlN particles) computation (AlGaN particles) computation (AlGaN particles) 0 0 100 200 300 400 5 10 15 20 pressure, mbar gap, mm Copyright © 2010 STR Group Ltd. All rights reserved www.str-soft.com
  5. 5. Cooperation with AIXTRON AG Modeling is actively used for the process optimization and design of commercial production-scale multi-wafer reactors GaN growth rate vs pressure in 6x2” CCS reactor Copyright © 2010 STR Group Ltd. All rights reserved www.str-soft.com
  6. 6. AlGaN growth efficiency: insight using modeling Modeling allows the interpretation of the experimental findings related to aluminum incorporation. A way to enhance the growth efficiency is suggested AlGaN solid-vapor relationship for different inlet configurations Copyright © 2010 STR Group Ltd. All rights reserved www.str-soft.com
  7. 7. Hydrogen interaction with III-nitrides Ga coverage vs NH3 partial pressure The ability to adjust the surface coverage is found to underlie various experimental findings related to both Non-coalesced a-GaN ELOG structures planar and selective grown under identical growth conditions, using hydrogen (a) and growth of GaN layers nitrogen (b) as a carrier gas Copyright © 2010 STR Group Ltd. All rights reserved www.str-soft.com
  8. 8. Surface quality: pinhole density reduction We suggest strategies for the pinhole density decrease and improvement of the surface morphology during GaN MOVPE via accumulation of metallic atoms in the adsorption layer Copyright © 2010 STR Group Ltd. All rights reserved www.str-soft.com
  9. 9. Surface quality: growth conditions and surface morphology Correlations between AlN surface roughness and growth conditions have been established using modeling and experimental study Surface roughness (experimental) and Growth rate vs total flow JAlN/Jtotal ratio (computed) vs TMAl flow Copyright © 2010 STR Group Ltd. All rights reserved www.str-soft.com
  10. 10. HVPE process/reactor optimization Modifications of the operating parameters and reactor design have been suggested, using modeling, to enhance the process efficiency Case 2: gas regulation chamber Case 1: bottom GaCl injector + nozzle Copyright © 2010 STR Group Ltd. All rights reserved www.str-soft.com

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