At low-exposure energies, the negative resist remains completely soluble in the developer solution. As the exposure is increased above a threshold energy Et, more of the resist film remains after development. At exposures two or three times the threshold energy, very little of the resist film is dissolved. For positive resists, the resist solubility in its developer is finite even at zero-exposure energy. The solubility gradually increases until, at some threshold, it becomes completely soluble. These curves are affected by all the resist processing variables: initial resist thickness, prebake conditions, developer chemistry, developing time, and others
Ion Source - where ions of the desired element are produced. Accelerator - where the ions are electrostatically accelerated to a high energy. Target Chamber - where the ions impinge on a target. Ion Implanter Major Parts: Stopping power - described as the energy loss of the ion per unit path length of the ion. Annealing - needed to repair the lattice damage
the process wherein semiconductor devices are electrically tested while they are still in their lead frame strips (before they are singulated).
a relatively new test process that is not applicable to all semiconductor packages. This is because it inserts the test process even before the devices are sigulated wherein what usually happens is that the singulation occurs first before the test.
Benefits of Split Testing:
Solves the difficulties of handling very small packages after these have been singulated.
With this kind of test, significant reduction in test cycle time.