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TRACK A: High Performance Integrated Power Management Platforms for LED lighting Control & Other Applications/ Dr.Shye Shapira

TRACK A: High Performance Integrated Power Management Platforms for LED lighting Control & Other Applications/ Dr.Shye Shapira






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    TRACK A: High Performance Integrated Power Management Platforms for LED lighting Control & Other Applications/ Dr.Shye Shapira TRACK A: High Performance Integrated Power Management Platforms for LED lighting Control & Other Applications/ Dr.Shye Shapira Presentation Transcript

    • May 1, 2013 1High Performance IntegratedPower ManagementPlatforms for LED lightingControl & Other ApplicationsDr.Shye ShapiraDirector of RDPower Management PlatformsTowerJazzChipex May 2013
    • May 1, 2013 22Total 8˝ Equivalent Capacity of ≈1.7M WPY
    • May 1, 2013 3Delivered Strong Annual Growth 2005-201210218723125229950961163901002003004005006007002005 2006 2007 2008 2009 2010 2011 2012$M3
    • May 1, 2013 4Drive For Better Power Management Solutions• Power Management Solutions are required at everyScale from National Grids to portable devices andthen within chips.• Why : Every system of every dimension needs tosupply energy to each of its components just like theflow . When they become sufficiently complex thebottelneck becomes energy management andDelivery .• Looking into Biology : The Human Brain consumes20% of the body energy.4
    • May 1, 2013 5•Digital Chip – (Managing Power at V~1V,I~1-100 mA)•Small, Medium Portable System PDA, Cell phone,Laptop. LED TV screen Motor Drives, MotherboardPower Management, Audio Amplifiers (Vdd~5-100V,I~ mA-20A)•Off Grid Devices : Power Adapter, LED Lamp(V~700V I~ 10mA- 1A)•Large Portable System (Ships, Drilling Towers,Airplanes, Spaceships )( V~1000-10000v, I -100 -1000 A)•Large Static system -> US national power Grid (SmartGrid Programs) (V- 100kV?)The (Electrical) Power Management Map5IntegratedPowerManagement:Drivers for IntegrationPortabilityEfficient Use of Energy (Grid Voltage, Lighting)
    • May 1, 2013 6Integrated Power Management Application spaceand Technology SolutionPOE, FPD DC/DC, LED BacklightTS35PM (5V CMOS)PMIC, Digital Controlled PowerTS18PM (1.8/5V CMOS)High Power/Motor Drive, POEIsolated TS35/18PMAC to DC up to 700VTS100PM•Scalable 7 to 60V Vds with low Rsp•Embedded no mask-adder NVM•Thick Power Metal (Cu /Al)•60V Vgs, 80V Vds options•Fully isolated devices with buried layers•Up to 60V operation with low Rsp•Noise isolation for >2 Amp applications•Allows positive/negative bias•1.8V CMOS for 125 Kgates/mm2•Same HV modules as TS35PM•Multi-Fab sourcing•AC to DC conversion•Industrial LED lighting•High side driver availableModular power management platform with best-in class performance anddesign enablement (models, PDK, IP and Design Services)
    • May 1, 2013 7Application Requirements: Expanding the Parameter Set•Large voltage Range (0-60V, 700V)•Large current Range/ Good Noise /Current Isolation•High Density Logic•High Density NVM Solutions•High Performance ESD /LU•Low Rdsonsp / Qg•Accurate and detailed modelingContracting the Parameter SetOptimize for•Low process complexity / Cost•Few Design Kits/ Process FamiliesTowerJazz Platform: Optimizing Conflicting Constraints•Low cost high performance starting base platform (20 m 3lm)Modules (0 mask NVM)•Modularity :Tuning the complexity to the application•Scalable solutions (Models Voltage)Foundry Power Solution Mindset
    • May 1, 2013 8Modularity: Flexibility balances Complexity“Isolated Platform”N+ Buried Layer, EPI growth and Sinkers(3-4 additional layers + EPI)“Base Platform” > 80v BVdssSingle gate oxide (5V) Scalable Voltage process with0.18um design rules20 layers for 3LM / Yflash NVM Module“High Digital Density” add on tothe “Base Platform”PowerMetal OptionsThick Al, 3.3um Cu
    • May 1, 2013 9Step-Down (“Buck”) DC-DC ConverterSwitching input to thelow-pass filter.Ideal Efficiency 100%9Vo=Vin* Ton/(Ton+Toff)
    • May 1, 2013 10Device Requirements : A Good (Integrated)Switch• High Breakdown Voltage• High Conductivity at Small Size: (Low R per unit area in real space)• Fast switching time (Low loss: Small gate charge Qg)• Good Isolation : Does not interfere with other circuitry or destroyitself.VsVd≤5-1000VVg≤5VRdrift“Low Voltage”Device /Switch“Drift Layer”How is the device made ?
    • May 1, 2013 11Enhancement of BV by Drift Layer• Drift layer enhances Vdd: When “low voltage” MOS on source side is“off”, the drift layer depletes: Becomes insulating and sustains most ofthe voltage .• In “on” conditions the drift layer becomes a series Resistor. One plansdevices with the lowest resistance for a given breakdown voltage.11Slides for use in Integrated Power Management circuits by Shye Shapira Spring 2013LDMOSBVLimitsMOSBVLimitsMOSOperationRegionVgsVdsLDMOS Safe Operation Area (SOA)Enhancement of MOS BV by Drift Layer
    • May 1, 2013 1212Rdson ReductionSTI Length is scaled toachieve Rdson Bvdssscalable tradeoff.STI Replaced by LOCOSTo Achieve a better TradeoffRdson BvdssN+P-PolySTISlides for use in Integrated Power Management circuits by Shye Shapira Spring 2013Self aligned Body implantreduces footprintEhnanced Ndriftdoping ReducesRdsonEhnancedPdoping
    • May 1, 2013 13Figures of Merit: QgHow much charge is neededto drive into the gate to turn the switch on?-> What is the switching time?-> How much energy is dissipated per switch?-> How efficient is the convertor(one expects 95%)Slides for use in Integrated Power Management circuits by Shye Shapira Spring 2013 13
    • May 1, 2013 14Additional Process Modules•Thick (3.3um) Top Copper layer for low resistivity–Pad over device for area reduction–Low Sheet Rho (5.5mW/sq)–Standard Top Metal 2,(3-option) um Al•“LOX” layer for 20% RdsOn reduction•Unique “Y-Flash” Non-Volatile Memory for trimming& code storage (zero to one additional layer)–64b module for trimming–4Kb and 16Kb modules for code storage–One design can be programmed to become a familyof devices.•5.7v Buried Zener Diode – one additional layerTowerJazz ConfidentialPoly14
    • May 1, 2013 15Continuous Voltage ScalingTowerJazz ConfidentialWhy: Different applications requireslightly higher voltage margins. Movingto the next discrete voltage bears a highRdson and Qg penalty .BV [V]RdSp[mOhmmm^2]Two DeviceOffering 1 ,2Continuous VoltageDevice Offering12Rdson reduction by continuousoffering vs Two Device offeringSolution : Continuous Voltage Scaled Platform•Rdson penalty for small increase in voltage is minimized.•Scalable Voltage devices are accompanied by scalable voltage ESD protectiondevices.•Automated pcells allow simple control and predictability of Rdson in continuousmanner.•Requires high end modeling solutions
    • May 1, 2013 160204060801000 20 40 60 80 100Rdson(mohm-mm2)BVdss [V]Rdson vs. BVdss of nLDMOS transistorTowerJazz Gen1TowerJazz Gen1TowerJazz Gen2TowerJazz Gen3TowerJazz Gen4 (in Dev)2012 EnhancementsEngineeringSolution
    • May 1, 2013 17Isolation against High Side and Low SideInjection17Deep Nwell (WTN)P-BodyM1DrainM1GateM1Source& BodyN+P+PolySTI N+Shallow Buried LayerIsolationDeep Buried LayerIsolationHigh Side Injection:•Holes from Body to Drain WellDiffuse to Substrate.•Effect:•High substrate currents•Large Dissipation (Voltage DropVdd), Device Destruction•Mitigation : Shallow Buried layerLow side Side Injection:Electrons Injected From Drain ToSubstrateEffect: Large Substrate CurrentMitigation: P+ substrateIsolated Drain
    • May 1, 2013 18700V TechnologyTowerJazz Confidential
    • May 1, 2013 19700VHigh Side /Low Side PlatformsLow side platformsinclude these
    • May 1, 2013 20RdsOn of 700V Devices579111315171921400 500 600 700 800 900RdsOn[Ω*mm²]BVdss [V]RdsOn Vs Breakdown Voltage
    • May 1, 2013 21drainsource/body(psub) gateNBL (highvoltage region)psubdnblpsub_hs21 /VdcHigh SideLow SideVhVoVsExternalDevicesloadLDMOSInterconnectionVddBootstrap diodeHigh Side CircuitsR700V HighSide BlockDiagramLevel ShifterFloatingNMOSTowerJazz Confidential
    • May 1, 2013 22Further ReadingTowerJazz ConfidentialTechnology : www.towerjazz.comTechnical papers examples(ieeexplore look up author et al and Jazz/ Tower / TowerJazz):Z. Lee , 2007,Klein , 2008, Mayzeles 2008, Berkovitch 2010, Levin 2011,Kanawati 2011.Svitliza 2011. Ophir-Arad 2012 Vardy 2012 Shapira 2012.Review• Course 046235 Integrated Power Management Platforms-Technion• Fundamentals of Power Semiconductor Devices By Baliga, B. Jayant 2008• Technology:• acrc.ee.technion.ac.il/.../Shapira%20Power%20Technology%20ACRC_JULY_2010.pdfIndustry :Integrated Power Management Platforms: The Entry of Fabless Design Houses to PowerManagement System Design)GSA Forum June 2010),‫אייל‬ ‫אלון‬ Tapeout LED ‫ו‬ AC DC ‫לשימושי‬ ‫הספק‬ ‫ניהול‬ ‫פלטפורמות‬‫תאורה‬ ‫והתקני‬ ‫ניידים‬ ‫להתקנים‬ ‫הספק‬ ‫ניהול‬ ‫פלטפורמות‬ Tapeout ‫שפירא‬ ‫שי‬
    • May 1, 2013 23