Your SlideShare is downloading. ×
Ehud tzuri 3 d challanges    new
Upcoming SlideShare
Loading in...5
×

Thanks for flagging this SlideShare!

Oops! An error has occurred.

×
Saving this for later? Get the SlideShare app to save on your phone or tablet. Read anywhere, anytime – even offline.
Text the download link to your phone
Standard text messaging rates apply

Ehud tzuri 3 d challanges new

1,098

Published on

Published in: Business, Technology
0 Comments
1 Like
Statistics
Notes
  • Be the first to comment

No Downloads
Views
Total Views
1,098
On Slideshare
0
From Embeds
0
Number of Embeds
0
Actions
Shares
0
Downloads
54
Comments
0
Likes
1
Embeds 0
No embeds

Report content
Flagged as inappropriate Flag as inappropriate
Flag as inappropriate

Select your reason for flagging this presentation as inappropriate.

Cancel
No notes for slide

Transcript

  • 1. The Shift to 3D IC Structures - Manufacturing and Process Control ChallengesEhud TzuriChief Marketing OfficerChipEx-2012, May 2012 External Use
  • 2. 300mmNOR  NAND PVD  Metal CVD Single-wafer E-beam New materials: III-V, Ge inspection MORE Processing CVD: hidden filmsINFLECTIONS DRAM 8F2  6F2 Atomic precision CMP Deposited resist IN NEXT Bumping Flowable films Advanced 5 YEARS THAN Wafer-level interconnect packaging Dry chemical Advanced patterning cleans 350nm 250nm 180nm 130nm 90nm 65nm 45nm 32nm 22nm 14nm 10nm Double Patterning LASTDeep-UV Laser Lithography Epi Cu damascene 15 YEARS High aspect ratio Etch Laser-based processing Patterning Films Low-k dielectric 450mm Lamp-based Interface 3D Hi-K ALD Processing CMP Sacrificial films management NAND DPN SiON gate Advanced Universal ALD Reflow  HPD transistor 2 External Use
  • 3. Moore’s LawThe number of transistors on integrated circuits doubles every two years “In 1965, Gordon Moore sketched out his prediction of the pace of silicon technology. Decades later, Moore’s Law remains true, driven largely by Intel’s unparalleled silicon expertise.” (Source: Intel; Copyright © 2005 Intel Corporation) How to maintain cost-performance ?3 External Use
  • 4. Complying with Moore’s Law Maintaining Cost-Performance  Shrink the feature size: ArF  Immersion  EUV  Increase wafer size: 200mm  300mm  450mm  Build vertically: 2D  3D4 External Use
  • 5. Where is 3D Architecture Implemented? 3D Wafer level Memory Transistor packaging V-NAND FinFET TSV5 External Use
  • 6. Where is 3D Architecture Implemented? 3D Wafer level Memory Transistor packaging V-NAND FinFET TSV6 External Use
  • 7. Flash Roadmap* * The future is coming sooner than we thoughtSource: J.Choi, Samsung, The 2nd International Memory Workshop, May.16, 2010 External Use 7
  • 8. From 2D to 3D Flash NAND Sourceline Wordlines Select gate  A folded, vertically stacked NAND string  Cells are generated inside a high-aspect-ratio (HAR) contact hole  Benefits: – Memory density is less dependent on patterning – Reduced coupling between memory cells – Cost scalabilityImage Sources:Left:IMFT 25-nm MLC NAND: technology scaling barriers broken, DONG YI Technology Group, Published Date:2010-3-23Right: Pipe-shaped BiCS Flash Memory with 16 Stacked Layers…/Ryota Katsumata - 2009 Symposium on VLSI Technology External Use
  • 9. 3D NAND Process Challenges TEM Image of 69-Layer Oxide/Nitride Stack Surface / interface roughness Top Film stress control for low wafer bow Fastest cycle time Bottom Excellent stacked particle performance Etch profile - ability to open HAR SEM X-section of double etched stack stacks Complex multi-stack requires precise process monitoring – thickness, RI, etch profile and defects Source: Pipe-shaped BiCS Flash Memory with 16 Stacked Layers…/Ryota Katsumata - 2009 Symposium on VLSI Technology9 External Use
  • 10. 3D NAND Metrology & Inspection Challenges Imaging of HAR contact hole Slit & plate etch along its depth inspection & imaging Charge Trap Embedded defects: material thickness Deep in the stack & uniformity along contact depth10 External Use
  • 11. Where is 3D Architecture Implemented? 3D Wafer level Memory Transistor packaging V-NAND FinFET TSV11 External Use
  • 12. Planar vs. Trigate (FinFET) Transistor  Benefits – Gate surrounds Si from 3 directions, thus, increasing control of over channel  reduced leakage – Can operate at lower voltage with good performance, reducing active power by >50%Source: Intel 22nm Trigate announcement , 4/19/2011 External Use
  • 13. FinFet – Process ChallengesSpacer Gate Stack (high-k & metal gate) • Complete spacer removal from fin area • Material selectivity • Material deposition thickness uniformity on vertical walls • Metal gate composition uniformity/stability FinFin Formation: • Precision etch STI • Structural integrity (collapse, Oxide erosion, thermal shock) • Precise Recess to control fin Fin Junctions: height • Conformal doping • Channel materials to increase on sidewalls mobility 13 External Use
  • 14. FinFET – Process Control Challenges Lg Measurement of Lg gate CD across the Fin height Lg Detection & Review of defects on Fin sidewalls after gate etch Measurement of Fin sidewall angle to control the 3D transistor width14 External Use
  • 15. Transistor Roadmap: Applied Materials View Planar CMOS FinFET III-V FinFET New Fin Gate Material Fin STI STI Oxide Oxide No end in sight for Moore’s Law – for the next decade15 External Use
  • 16. Where is 3D Architecture Implemented? 3D Wafer level Memory Transistor packaging V-NAND FinFET TSV16 External Use
  • 17. 3D Integration & TSV  TSV is a process in which wafers are: thinned, stacked & interconnected  All flows include creation of deep holes and filling them with Cu interconnectSource: DAC, 2½D Integrated Circuits, Wednesday, January 26, 2011 , Paul McLellan / Source: “Through-Silicon Via (TSV)””, Vol. 97, 0018-9219/$25.00 2009 IEEE No. 1, January 2009 | Proceedings of the IEEE 17 External Use
  • 18. TSV – Process Control Challenges Ta/TaN/Au CVD-SiO2 Wafer inspection for surface defects on TSV sidewalls and bottom Si substrate InterlayerPassivation layer Bonding pad Adhesive Handle wafer HAR SEM-based defect review for sidewall and bottom defects; including over-etch18 External Use
  • 19. Common Challenges Defects of importance are located in the 3rd dimension; they need to be found & imaged Measurements of the 3rd dimension (HAR, SWA) need to be performed Current state of the art M&I tools have limitations to do so19 External Use
  • 20. Possible Solutions SEM-based imaging Optical metrology X-ray Destructive technologies20 External Use
  • 21. Possible Solutions – The Leading Candidate SEM-based imaging 3D imaging E-beam inspection techniques with SEM (Voltage Contrast) (Resolution)21 External Use
  • 22. Summary The future is here… 3D transistors and TSV are already a reality, VNAND is just around the corner 3D Key challenges are related (mainly) to process integration and process control Traditional process control solutions might not be sufficient E-Beam based techniques have the potential to become the process control enablers22 External Use
  • 23. Thank You External Use

×