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Simplify the Science of ALD.                               Cambridge NanoTech                               Corporate Over...
Cambridge NanoTech ALD Systems   • All Cambridge NanoTech ALD Systems are controlled with a       convenient Labview-PC-US...
ALD Cycle for Al2O3 Deposition    Tri-methyl    aluminum                                 Methyl group                     ...
ALD Cycle for Al2O3 Deposition                                          Methane                                          r...
ALD Cycle for Al2O3 Deposition                         Excess TMA                             Methane reaction            ...
ALD Cycle for Al2O3 Deposition                                H 2O                                           O            ...
ALD Cycle for Al2O3 Deposition                                                 Methane reaction product                   ...
ALD Cycle for Al2O3 Deposition                                                H                                           ...
ALD Cycle for Al2O3 Deposition                                         H        H        H                                ...
ALD Cycle for Al2O3 Deposition    • The saturative chemisorption of each layer and its        subsequent monolayer passiva...
ALD Deposition Advantages            Alternating reactant exposure creates unique                  properties of deposited...
Cambridge NanoTech ALD Systems   • Savannah - Thermal ALD System for R&D      – More than 100 systems sold   • Fiji – Plas...
Savannah ALD Systems    • World’s most popular ALD system for R&D    • Great films and easy to use       – System set up i...
Patent Pending ALD ShieldTM Trap                 Flow direction     Coating    No coating                                 ...
Fiji: Next Gen Plasma ALD System• Revolutionary reactor design built from ALD  principals, NOT a converted CVD chamber:   ...
Sample Fiji Configurations    Single Chamber with                Dual Chamber   Dual Chamber with    Load Lock            ...
Phoenix Batch ALD System                                 Phoenix System Overview                                 • Batch A...
Tahiti ALD System                                 Tahiti System Overview                                 • Tahiti Large Su...
Cambridge NanoTech Summary   •   Cambridge NanoTech is a world leader in ALD technology        – World-class ALD scientist...
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Cambridge NanoTech Overview

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Transcript of "Cambridge NanoTech Overview"

  1. 1. Simplify the Science of ALD. Cambridge NanoTech Corporate Overview August 2009
  2. 2. Cambridge NanoTech ALD Systems • All Cambridge NanoTech ALD Systems are controlled with a convenient Labview-PC-USB interface. • All ALD systems have hot walls with cross-flow precursor deposition. N2 gas is used for high speed pulse-purge cycles. • Prior to deposition, a substrate is inserted into the ALD reactor, and is heated usually between 50-400ºC.Cambridge NanoTech Inc. Confidential 2
  3. 3. ALD Cycle for Al2O3 Deposition Tri-methyl aluminum Methyl group Methane reaction (CH3) Reaction of product (CH4) Al(CH3)3(g) H TMA with OH H Al C C H H Hydroxyl (OH) H H H H from surface H C C H adsorbed H2O H Al H O O Substrate surface (e.g. Si) Substrate surface (e.g. Si) Trimethyl Aluminum (TMA) reacts with the In air H2O vapor is adsorbed on most surfaces, adsorbed hydroxyl groups, producing methane as forming a hydroxyl group. With silicon this forms: the reaction product. Si-O-H (s). After placing the substrate in the reactor, Trimethyl Aluminum (TMA) is pulsed into the reaction chamber. • Trimethyl Aluminum (TMA) reacts with the adsorbed hydroxyl groups, producing methane as the reaction product. Al(CH3)3 (g) + : Si-O-H (s) :Si-O-Al(CH3)2 (s) + CH4Cambridge NanoTech Inc. Confidential 3
  4. 4. ALD Cycle for Al2O3 Deposition Methane reaction product CH4 H Reaction of H C TMA with OH H H H H H C C H H Al O Substrate surface (e.g. Si) • Trimethyl Aluminum (TMA) reacts with the adsorbed hydroxyl groups, producing methane as the reaction product. Al(CH3)3 (g) + : Si-O-H (s) :Si-O-Al(CH3)2 (s) + CH4Cambridge NanoTech Inc. Confidential 4
  5. 5. ALD Cycle for Al2O3 Deposition Excess TMA Methane reaction product CH4 H H H C C H Al O Substrate surface (e.g. Si) • Trimethyl Aluminum (TMA) reacts with the adsorbed hydroxyl groups, until the surface is passivated. TMA does not react with itself, terminating the reaction to one layer. This causes the perfect uniformity of ALD. The excess TMA is pumped away with the methane reaction product.Cambridge NanoTech Inc. Confidential 5
  6. 6. ALD Cycle for Al2O3 Deposition H 2O O H H H H H C C H Al O • After the TMA and methane reaction product is pumped away, water vapor (H2O) is pulsed into the reaction chamber.Cambridge NanoTech Inc. Confidential 6
  7. 7. ALD Cycle for Al2O3 Deposition Methane reaction product New hydroxyl group Methane reaction H Oxygen bridges product O O Al Al Al O • H2O reacts with the dangling methyl groups on the new surface forming aluminum-oxygen (AI-O) bridges and hydroxyl surface groups, waiting for a new TMA pulse. Again, methane is the reaction product. 2 H2O (g) + :Si-O-Al(CH3)2 (s) :Si-O-Al(OH)2 (s) + 2 CH4Cambridge NanoTech Inc. Confidential 7
  8. 8. ALD Cycle for Al2O3 Deposition H O O O Al Al Al O • The reaction product methane is pumped away. Excess H2O vapor does not react with the hydroxyl surface groups, again causing perfect passivation to one atomic layer.Cambridge NanoTech Inc. Confidential 8
  9. 9. ALD Cycle for Al2O3 Deposition H H H O O O O O Al Al Al O O O O O Al Al Al O O O O O Al Al Al O O O • One TMA and one H2O vapor pulse form one cycle. Here three cycles are shown, with approximately 1 Angstrom per cycle. Each cycle including pulsing and pumping takes, e.g. 3 sec. Two reaction steps Al(CH3)3 (g) + :Al-O-H (s) :Al-O-Al(CH3)2 (s) + CH4 in each cycle: 2 H2O (g) + :O-Al(CH3)2 :Al-O-Al(OH)2 + 2 CH4 (s) (s)Cambridge NanoTech Inc. Confidential 9
  10. 10. ALD Cycle for Al2O3 Deposition • The saturative chemisorption of each layer and its subsequent monolayer passivation in each cycle, allows excellent uniformity into high aspect ratio 3D structures, such as DRAM trenches, MEMS devices, around particles, etc.Cambridge NanoTech Inc. Confidential 10
  11. 11. ALD Deposition Advantages Alternating reactant exposure creates unique properties of deposited coatings: • Thickness determined simply by number of cycles • Precursors are saturatively chemisorbed => stoichiometric films with large area uniformity and 3D conformality • Relatively insensitive to dust (film grows underneath dust particles) • Intrinsic deposition uniformity and small source size => easy scaling • Nanolaminates and mixed oxides possible • Low temperature deposition possible (RT-400 ºC) • Gentle deposition process for sensitive substratesCambridge NanoTech Inc. Confidential 11
  12. 12. Cambridge NanoTech ALD Systems • Savannah - Thermal ALD System for R&D – More than 100 systems sold • Fiji – Plasma ALD System for R&D – Next generation plasma ALD system • Phoenix – Batch Production Thermal ALD System – Batch production for Gen 2 substrates and wafers • Tahiti – Large Surface Area Production Thermal ALD System – Stackable chambers for Gen 4.5 substrates Savannah Fiji Phoenix TahitiCambridge NanoTech Inc. Confidential 12
  13. 13. Savannah ALD Systems • World’s most popular ALD system for R&D • Great films and easy to use – System set up in under 3 hours – Intuitive user interface very easy to learn – Recipes included Savannah S100 Savannah S200 Savannah S300Cambridge NanoTech Inc. Confidential 13
  14. 14. Patent Pending ALD ShieldTM Trap Flow direction Coating No coating Cambridge NanoTech’s high conductance hot foil ALD trap forms a uniform solid coating until the precursor is depleted. Traps can be cleaned after 100 µm of coating.Cambridge NanoTech Inc. Confidential 14
  15. 15. Fiji: Next Gen Plasma ALD System• Revolutionary reactor design built from ALD principals, NOT a converted CVD chamber: – Contoured shape for laminar flow and uniform depositions – Design eliminates gate valves in the reactor – Close mixing of precursor and plasma gases• Based on world class Savannah ALD system – Proven precursor delivery system – Integrated ALD Shield vapor trap• Modular design and many configurations – Single and dual chamber configurations available – Options include load lock, turbo pumps, and automatic pressure control (APC)Cambridge NanoTech Inc. Confidential 15
  16. 16. Sample Fiji Configurations Single Chamber with Dual Chamber Dual Chamber with Load Lock Cleanroom Façade Also Available: Dual chamber with load locks, Single chamber with clean room façade, and optional analysis ports in reaction chamberCambridge NanoTech Inc. Confidential 16
  17. 17. Phoenix Batch ALD System Phoenix System Overview • Batch ALD production system – 5 GEN 2 substrates (370x470 mm) – 52 wafers: 200 mm – 78 wafers: 150 mm – Large objects • Deposition temperature: 85–285 C • Uniformity < 3% 2-sigma (Al2O3) • Small footprint: 700x700 mm • Optimized for low maintenance – stainless steel liner and trap easily exchanged for periodic cleaning – Exchange time approx. 1 hour • Patent pending trap prevents coating inside the pumping line and pump decreasing pumping line and pump maintenanceCambridge NanoTech Inc. Confidential 17
  18. 18. Tahiti ALD System Tahiti System Overview • Tahiti Large Surface Area production system – 2 Gen 4.5 substrates – Scalable to accommodate Gen 5 substrates and larger • Uniformity < 5% 3-sigma (Al2O3) • Dual stacked chambers saves cleanroom space • Optimized for low maintenance – Stainless steel liner and trap easily exchanged for periodic cleaning • Patent pending trap prevents coating inside the pumping line and pump decreasing pumping line and pump maintenance • Automation-ready with easy network connectivity and on-board diagnostics.Cambridge NanoTech Inc. Confidential 18
  19. 19. Cambridge NanoTech Summary • Cambridge NanoTech is a world leader in ALD technology – World-class ALD scientist led by Dr. Jill Becker, Founder – Leading ALD research with association with Harvard Univ. • Leader in ALD R&D systems with over 150 Savannahs worldwide – Many satisfied customers and references • Developed Phoenix and Fiji ALD systems under contract with CNT customers – Leading Semiconductor manufacturer hired CNT to develop the Phoenix ALD production system – Leading R&D Institute hired CNT to develop the next generation plasma ALD system - Fiji www.cambridgenanotech.com See Website for additional informationCambridge NanoTech Inc. Confidential 19
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