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L1 print L1 print Document Transcript

  • Introduction to CMOS VLSI Design Slides adapted from: N. Weste, D. Harris, CMOS VLSI Design, © Addison-Wesley, 3/e, 2004 1 IntroductionIntegrated Circuits:many transistors on one chipVery Large Scale Integration (VLSI):very many transistors on one chipComplementary Metal Oxide Semiconductor (CMOS):fast, cheap, low power 2 1
  • Outline A Brief History MOS transistors CMOS Logic CMOS Fabrication and Layout Chip Design Challenges System Design Logic Design Physical Design Design Verification Fabrication, Packaging and Testing 3A Brief History T-R-A-N-S-I-S-T-O-R = TRANsfer resiSTOR 1947: John Bardeen, Walter Brattain and William Schokley at Bell laboratories built the first working point contact transistor (Nobel Prize in Physics in 1956) 1958: Jack Kylby built the first integrated circuit flip flop at Texas Instruments (Nobel Prize in Physics in 2000) 1925: Julius Lilienfield patents the original idea of field effect transistors 1935: Oskar Heil patents the first MOSFET 1963: Frank Wanlass at Fairchild describes the first CMOS logic gate (nMOS and pMOS) 1970: Processes using nMOS became dominant 1980: Power consumption become a major issue. CMOS process are widely adopted. 4 2
  • A Brief HistoryIntegrated Circuits enabled today’s way of life1018 transistors manufactured in 2003 100 million for every human on the planet 5Moore’s Law In 1963 Gordon Moore predicted that as a result of continuous miniaturization transistor count would double every 18 months 53% compound annual growth rate over 45 years No other technology has grown so fast so long Transistors become smaller, faster, consume less power, and are cheaper to manufacture 6 3
  • Clock Frequencies of Intel ProcessorsTransistor count is not the only factor that has grown exponentially, e.g.clock frequencies have doubled roughly every 34 months 7 Chip Integration Level SSI = small-scale integration ( up to 10 gates) MSI = medium-scale integration ( up to 1000 gates) LSI = large-scale integration (up to 10000 gates) VLSI = very large-scale integration (over 10000 gates) 8 4
  • Technology Scaling 1971: Intel 4004 transistors with minimum dimension of 10um 2003: Pentium 4 transistors with minimum dimension of 130 nm Scaling cannot go on forever because transistors cannot be smaller than atoms ☺ 9 The Productivity GapDesigners rely increasingly on design automation software tools:• to seek productivity gains• to cope with increased complexity Source: SEMATECH 10 5
  • Silicon Lattice Silicon is a semiconductor Transistors are built on a silicon substrate Silicon is a Group IV material Forms crystal lattice with bonds to four neighbors 11Dopants Pure silicon has no free carriers and conducts poorly Adding dopants increases the conductivity Group V: extra electron (n-type) Group III: missing electron, called hole (p-type) Si Si Si Si Si Si - + + - Si As Si Si B Si Si Si Si Si Si Si 12 6
  • Transistor Types Bipolar transistors npn or pnp silicon structure Small current into very thin base layer controls large currents between emitter and collector Base currents limit integration density Metal Oxide Semiconductor Field Effect Transistors nMOS and pMOS MOSFETS Voltage applied to insulated gate controls current between source and drain Low power allows very high integration 13 MOS TransistorsFour terminals: gate, source, drain, body (= bulk = substrate) 14 7
  • nMOS Operation Body is commonly tied to ground (0 V) When the gate is at a low voltage: P-type body is at low voltage Source-body and drain-body diodes are OFF No current flows, transistor is OFF Source Gate Drain Polysilicon SiO2 0 n+ n+ S D p bulk Si 15nMOS Operation Cont. When the gate is at a high voltage: Positive charge on gate of MOS capacitor Negative charge attracted to body channel under gate gets “inverted” to n-type Now current can flow through n-type silicon from source through channel to drain, transistor is ON Source Gate Drain Polysilicon SiO2 1 n+ n+ S D p bulk Si 16 8
  • pMOS Transistor Similar, but doping and voltages reversed Body tied to high voltage (VDD) Gate low: transistor ON Gate high: transistor OFF Bubble indicates inverted behavior Source Gate Drain Polysilicon SiO2 p+ p+ n bulk Si 17Power Supply Voltage GND = 0 V In 1980’s, VDD = 5V VDD has decreased in modern processes High VDD would damage modern tiny transistors Lower VDD saves power VDD = 3.3, 2.5, 1.8, 1.5, 1.2, 1.0, … 18 9
  • MOS Transistors as switchesWe can model MOS transistors as controlled switchesVoltage at gate controls path from source to drain 19 CMOS Technology CMOS technology uses both nMOS and pMOS transistors. The transistors are arranged in a structure formed by two complementary networks Pull-up network is complement of pull-down Parallel -> series, series -> parallel 20 10
  • CMOS Logic Inverter A Y 0 1 1 0 ON OFF1= 0= =1 =0 OFF ON 21 CMOS Logic NAND 22 11
  • CMOS Logic NOR 23CMOS Logic Gates (a.k.a. Static CMOS) Pull-up network is complement of pull-down Parallel series, series parallel 24 12
  • Compound GatesExample: Y = (A+B+C) DABCD Y---0 10001 11--1 0-1-1 0--11 0 25Compound Gates 26 13
  • How good is the output signal ? Signal Strength Strength of signal How close it approximates ideal voltage source VDD and GND rails are strongest 1 and 0 sources nMOS and pMOS are not ideal switches nMOS pass strong 0, but degraded or weak 1 pMOS pass strong 1, but degraded or weak 0 Thus: nMOS are best for pull-down network pMOS are best for pull-up network 27Pass Transistors Transistors can be used as switches 28 14
  • Transmission Gates Pass transistors produce degraded outputs Transmission gates pass both 0 and 1 well 29Static CMOS gates are fully restored In static CMOS, the nMOS transistors only need to pass 0’s and the pMOS only pass 1’s, so the output is always strongly driven and the levels are never degraded This is called a fully restored logic gate 30 15
  • Static CMOS is inherently inverting CMOS single stage gates must be inverting To build non inverting functions we need multiple stages 31Tristates Tristate buffer produces Z when not enabled EN A Y 0 0 Z 0 1 Z 1 0 0 1 1 1 32 16
  • Nonrestoring TristatesTransmission gate acts as tristate buffer Only two transistors But nonrestoring A is passed on to Y as it is (thus, Y is not always a strong 0’s or 1’s) 33Tristate InverterTristate inverter produces restored outputFor a non inverting tristate add an inverter in front 34 17
  • Multiplexers2:1 multiplexer chooses between two inputsS D1 D0 Y S0 X 0 00 X 1 1 D0 0 Y1 0 X 0 D1 11 1 X 1 35Gate-Level Mux Design Y = S D0 + S D1 How many transistors are needed? = 20 = = Too Many !!D1S YD0D1 4 2S 4 2 YD0 4 2 2 36 18
  • Transmission Gate Mux Nonrestoring mux uses two transmission gates Only 4 transistors 37Inverting Mux Inverting multiplexer Use compound gate or pair of tristate inverters Essentially the same thing For noninverting multiplexer add an inverter 38 19
  • D Latch When CLK = 1, latch is transparent D flows through to Q like a buffer When CLK = 0, the latch is opaque Q holds its old value independent of D a.k.a. transparent latch or level-sensitive latch CLK CLK D Latch D Q Q 39 D Latch Design Multiplexer chooses D or hold Q CLK CLKD Q Q 1 Q D Q 0 CLK CLK CLK 40 20
  • D Latch Operation Q Q D Q D Q CLK = 1 CLK = 0 CLK D Q 41 D Flip-flop When CLK rises, D is copied to Q At all other times, Q holds its value a.k.a. positive edge-triggered flip-flop, master- slave flip-flop CLK CLK D FlopD Q Q 42 21
  • D Flip-flop Design Built from master and slave D latches CLK CLK CLK QM D Q CLK CLK CLK CLK CLK Latch Latch QMD Q CLK CLK 43 D Flip-flop Operation QM Q D CLK = 0 QM D Q CLK = 1 CLK D Q 44 22
  • Summary “If the automobile had followed the same development cycle as the computer, a Rolls Royce would today cost $100, get one million miles per gallon, and explode once a year …” Robert X. Cringely, InfoWorld Magazine 45 23