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  1. 1. MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC517/D Darlington Transistors NPN Silicon BC517 COLLECTOR 1 BASE 2 EMITTER 3 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit CASE 29–04, STYLE 17 TO–92 (TO–226AA) Collector – Emitter Voltage VCES 30 Vdc Collector – Base Voltage VCB 40 Vdc Emitter – Base Voltage VEB 10 Vdc Collector Current — Continuous IC 1.0 Adc Total Power Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 12 mW/°C Total Power Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg – 55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to RqJA 200 °C/W Ambient Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage V(BR)CES 30 — — Vdc (IC = 2.0 mAdc, VBE = 0) Collector – Base Breakdown Voltage V(BR)CBO 40 — — Vdc (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage V(BR)EBO 10 — — Vdc (IE = 100 nAdc, IC = 0) Collector Cutoff Current ICES — — 500 nAdc (VCE = 30 Vdc) Collector Cutoff Current ICBO — — 100 nAdc (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current IEBO — — 100 nAdc (VEB = 10 Vdc, IC = 0) Motorola Small–Signal Transistors, FETs and Diodes Device Data 1 © Motorola, Inc. 1996
  2. 2. BC517 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS(1) DC Current Gain hFE 30,000 — — — (IC = 20 mAdc, VCE = 2.0 Vdc) Collector – Emitter Saturation Voltage VCE(sat) — — 1.0 Vdc (IC = 100 mAdc, IB = 0.1 mAdc) Base – Emitter On Voltage VBE(on) — — 1.4 Vdc (IC = 10 mAdc, VCE = 5.0 Vdc) SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product(2) fT — 200 — MHz (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width v 2.0%. 2. fT = |hfe| • ftest RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
  3. 3. BC517 NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) 500 2.0 BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz RS ≈ 0 1.0 200 0.7 en, NOISE VOLTAGE (nV) i n, NOISE CURRENT (pA) 0.5 100 IC = 1.0 mA 10 µA 0.3 50 0.2 100 µA 100 µA 0.1 20 0.07 IC = 1.0 mA 10 µA 0.05 10 0.03 5.0 0.02 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) f, FREQUENCY (Hz) Figure 2. Noise Voltage Figure 3. Noise Current 200 14 VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) BANDWIDTH = 10 Hz TO 15.7 kHz 12 BANDWIDTH = 10 Hz TO 15.7 kHz 100 NF, NOISE FIGURE (dB) 10 70 IC = 10 µA 10 µA 8.0 50 100 µA 6.0 30 100 µA 4.0 IC = 1.0 mA 20 1.0 mA 2.0 10 0 1.0 2.0 5.0 10 20 50 100 200 500 100 1.0 2.0 5.0 10 20 50 100 200 500 100 RS, SOURCE RESISTANCE (kΩ) 0 RS, SOURCE RESISTANCE (kΩ) 0 Figure 4. Total Wideband Noise Voltage Figure 5. Wideband Noise Figure Motorola Small–Signal Transistors, FETs and Diodes Device Data 3
  4. 4. BC517 SMALL–SIGNAL CHARACTERISTICS 20 4.0 VCE = 5.0 V |h fe |, SMALL–SIGNAL CURRENT GAIN TJ = 25°C f = 100 MHz 10 2.0 TJ = 25°C C, CAPACITANCE (pF) 7.0 Cibo 1.0 5.0 Cobo 0.8 0.6 3.0 0.4 2.0 0.2 0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 0.5 1.0 2.0 0.5 10 20 50 100 200 500 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 6. Capacitance Figure 7. High Frequency Current Gain VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) 200 k 3.0 TJ = 125°C TJ = 25°C 100 k 2.5 70 k IC = 10 mA 50 mA 250 mA 500 mA hFE, DC CURRENT GAIN 50 k 25°C 30 k 2.0 20 k 1.5 10 k 7.0 k – 55°C 5.0 k 1.0 VCE = 5.0 V 3.0 k 2.0 k 0.5 5.0 7.0 10 20 30 50 70 100 200 300 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (µA) Figure 8. DC Current Gain Figure 9. Collector Saturation Region 1.6 – 1.0 RθV, TEMPERATURE COEFFICIENTS (mV/°C) *APPLIES FOR IC/IB ≤ hFE/3.0 25°C TO 125°C TJ = 25°C 1.4 – 2.0 *RqVC FOR VCE(sat) V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 1000 – 55°C TO 25°C 1.2 – 3.0 VBE(on) @ VCE = 5.0 V 25°C TO 125°C 1.0 – 4.0 qVB FOR VBE 0.8 – 5.0 – 55°C TO 25°C VCE(sat) @ IC/IB = 1000 0.6 – 6.0 5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 10. “On” Voltages Figure 11. Temperature Coefficients 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
  5. 5. BC517 1.0 0.7 D = 0.5 0.5 RESISTANCE (NORMALIZED) 0.2 r(t), TRANSIENT THERMAL 0.3 0.2 SINGLE PULSE 0.05 0.1 0.1 0.07 SINGLE PULSE 0.05 0.03 ZθJC(t) = r(t) • RθJC TJ(pk) – TC = P(pk) ZθJC(t) 0.02 ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t) 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k t, TIME (ms) Figure 12. Thermal Response 1.0 k FIGURE A 700 1.0 ms 500 IC, COLLECTOR CURRENT (mA) tP 300 TC = 25°C 100 µs TA = 25°C PP PP 200 1.0 s 100 70 50 t1 30 CURRENT LIMIT 20 THERMAL LIMIT 1/f + t1 f + ttP SECOND BREAKDOWN LIMIT DUTY CYCLE 1 10 0.4 0.6 1.0 2.0 4.0 6.0 10 20 40 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) PEAK PULSE POWER = PP Figure 13. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data Motorola Small–Signal Transistors, FETs and Diodes Device Data 5
  6. 6. BC517 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI A B Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. R 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K P MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. L SEATING F PLANE K INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.175 0.205 4.45 5.20 D B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 J D 0.016 0.022 0.41 0.55 X X F 0.016 0.019 0.41 0.48 G G 0.045 0.055 1.15 1.39 H H 0.095 0.105 2.42 2.66 SECTION X–X J 0.015 0.020 0.39 0.50 V C K 0.500 ––– 12.70 ––– L 0.250 ––– 6.35 ––– N 0.080 0.105 2.04 2.66 1 N P ––– 0.100 ––– 2.54 R 0.115 ––– 2.93 ––– N V 0.135 ––– 3.43 ––– STYLE 17: CASE 029–04 PIN 1. COLLECTOR 2. BASE (TO–226AA) 3. EMITTER ISSUE AD Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA/EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 *BC517/D* 6 ◊ Motorola Small–Signal Transistors, FETs and Diodes Device Data BC517/D
  7. 7. This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.

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