Your SlideShare is downloading. ×

Thanks for flagging this SlideShare!

Oops! An error has occurred.

×
Saving this for later? Get the SlideShare app to save on your phone or tablet. Read anywhere, anytime – even offline.
Text the download link to your phone
Standard text messaging rates apply

GaN-on-Si Substrate Technology and Market for LED and Power Electronics

3,134
views

Published on

GaN-on-Si enables GaN power electronics, will LED transition as well? …

GaN-on-Si enables GaN power electronics, will LED transition as well?


GaN-ON-Si LED IS ALREADY ADOPTED BY SOME LED MANUFACTURERS, BUT COULD IT BECOME THE INDUSTRY STANDARD?
Today, GaN on Sapphire is the main stream technology for LED manufacturing. GaN-on-Si technology appeared naturally as an alternative to sapphire to reduce cost. Our cost simulation indicates that the differential in silicon substrate cost is not enough to justify the transition to GaN-on-Si technology. The main driver is the ability to manufacture in existing, depreciated CMOS fabs in 6” or 8”.

Despite potential cost benefits for LEDs, the mass adoption of GaN-on-Si technology for LED applications remains unclear. Opinions regarding the chance of success for LED-on-Si vary widely in the LED industry from unconditional enthusiasm to unjustified skepticism. Virtually all major LED makers are researching GaN-on-Si LED, but few have made it the core of their strategy and technology roadmap. Among the proponents, only Lattice Power, Plessey and Toshiba have moved to production and are offering commercial LED-on-Si.

At Yole Développement, we believe that although significant improvements have been achieved, there are still some technology hurdles (performance, yields, CMOS compatibility). We consider that if the technology hurdles are cleared, GaN-on-Si LEDs will be adopted by some LED manufacturers, but will not become the industry standard. We expect that Silicon will capture less than 5% of LED manufacturing by 2020.

GaN-ON-Si TECHNOLOGY WILL BE WIDELY ADOPTED BY POWER ELECTRONICS APPLICATIONS

The power electronics market addresses applications such as AC to DC or DC to AC conversion, which is always associated with substantial energy losses that increase with higher power and operating frequencies. Incumbent silicon based technology is reaching its limit and it is difficult to meet higher requirements. GaN based power electronics have the potential to significantly improve efficiency at both high power and frequencies while reducing device complexity and weight. Power GaN are therefore emerging as a substitution to the silicon based technology. Today, Power GaN remains at its early stage and presents only a tiny part of power electronics market.
We are quite optimistic about the adoption of GaN-on-Si technology for Power GaN devices. GaN-on-Si technology have brought to market the first GaN devices. Contrary to the LED industry, where GaN-on-Sapphire technology is main stream and presents a challenging target, GaN-on-Si will dominate the GaN based power electronics market because of its lower cost and CMOS compatibility. Although GaN based devices remain more expensive than Si based devices today, the overall cost of GaN devices for some applications are expected to be lower than Si devices three years from now, according to some manufacturers.

http://www.i-micronews.com/reports/GaN-on-Si-Substrate-Market-LED-Power-Electronics/3/424/

Published in: Technology

0 Comments
1 Like
Statistics
Notes
  • Be the first to comment

No Downloads
Views
Total Views
3,134
On Slideshare
0
From Embeds
0
Number of Embeds
8
Actions
Shares
0
Downloads
212
Comments
0
Likes
1
Embeds 0
No embeds

Report content
Flagged as inappropriate Flag as inappropriate
Flag as inappropriate

Select your reason for flagging this presentation as inappropriate.

Cancel
No notes for slide

Transcript

  • 1. © 2014 Copyrights © Yole Développement SA. All rights reserved. GaN-on-Si Technology and Market for LED and power electronics Applications 75 cours Emile Zola, F-69001 Lyon-Villeurbanne, France Tel : +33 472 83 01 80 - Fax : +33 472 83 01 83 Web: http://www.yole.fr OSRAM Aixtron CREELumiledsVerticle Inc FBHEpiGaN AZZURRO FBH EPC Corp. IMEC Toshiba Plessey
  • 2. © 2014• 2 Copyrights © Yole Développement SA. All rights reserved. GaN on Si Substrates Mass-market introduction in various applications < 2009 20122010 2011 2013 GaN/Sapphire > 2020 GaN/SiC OptoLEDOptoLaserRFElectron.PowerElectron. GaN/Sapphire LOG GaN/bulk GaN GaN/Silicon GaN/S.I. SiC GaN/Silicon GaN/AlN GaN/bulk GaN GaN/AlN Bonded GaN / Diamond GaN/bulk GaNGaN/Silicon Bonded GaN / Diamond Executive Summary Topgan Soraa 2014 Engineered substrates 2017 GaN/bulk GaN
  • 3. © 2014• 3 Copyrights © Yole Développement SA. All rights reserved. Mapping of Open Market players Executive Summary We have not observed an absolute dominance from one region.
  • 4. © 2014• 4 Copyrights © Yole Développement SA. All rights reserved. 2013-2020 6” GaN-on-Si Epiwafer volumes: Open + Captive Market In terms of volume, LED will lead the GaN on Si applications till 20XX. Power GaN business would catch up if the commercialization of GaN 600 V devices will be concretized in the following 1-2 years. The total epiwafer volume will exceed X.X Munits in 2020. Executive Summary
  • 5. © 2014• 5 Copyrights © Yole Développement SA. All rights reserved. Comparison of Epitaxy Techniques MBE MOCVD Plasma assisted MOCVD HVPE Source Metal, gas MO, NH3 (Carrier gas also needed) N2 , MO Metal, NH3 Source Safety Safe Higher safety risk Safer compared to MOCVD Safe Deposition Temperature 750°C-900°C for GaN ~ 700°C for InGaN 950-1150°C for p-GaN and n-GaN <800°C for InGaN <700°C for all layers <1150°C Pressure UHV: 10-10 – 10-11 Torr 15-750 Torr / 760 Torr Deposition speed 1 um/h 1 to 10 um/h typically < 0.5 um/hour 50 to 200 um/h Interface control Very good: atomic layers Medium: layers below 3-4 nm difficult Poor? Poor Parasitic reactions None (reaction only on substrate) High High High Uptime (Cleaning) • 6-12 month campaigns without cleaning but maintenance cycles can last several weeks •Other maintenance driven by sources replenishment. Cleaning maintenance cycles <12 hours. Recent commercial system can provide 20 to 30 runs without cleaning (~6-10 days) ? Heavy cleaning maintenance Comment •Good layer thickness and composition controls. •Mainly used for R&D and complex novel structures •Wafer production •LED and power devices productions Emerging. Bluglass ($2.7M for GaN RPCVD process, including for Si) Kyma Technology (US); HVPE on AlN/Si templates LumiGNtech Co., Ltd (KR) Samsung/SNU (KR) : free- standing GaN on Si (2”) GaN on Si Technology
  • 6. © 2014• 6 Copyrights © Yole Développement SA. All rights reserved. Different types of buffer layers Al containing Others AlN ou AlGaN single layer Superlattices (SLs) made of GaN and Al(Ga)N layers ReO*, HfN, BP,ZrB2, ScN, Al2O3….. EpiGaN (BE) Dowa(JP) University Magdeburg (GE) ReO: Translucent (US) Si GaN Si Al(Ga)N GaN Al(Ga)N GaN Si Others GaN GaN on Si Technology * Re: Rare earth
  • 7. © 2014• 7 Copyrights © Yole Développement SA. All rights reserved. • Unlike sapphire, which is transparent, silicon re-absorbs most of the light emitted toward the substrate. • This significantly decreases the efficiency of the LED. • The most common solution to the problem is to use a vertical LED structure: • Step #1: The LED + substrate structure is flipped and bonded onto another Si carrier substrate with a mirror layer. • Step #2: The epitaxial silicon substrate is removed. • In order to reduce cost, the carrier substrate can be a (100) Si wafers (the epitaxy must be performed on a less standard (111) wafer) n-GaN p-GaN Silicon Substrate Active layers Emitted light Absorbed light n-GaN p-GaN Silicon Substrate Mirror layer n-GaN p-GaN Silicon Substrate Carrier substrate (Si) n-GaN p-GaN Carrier substrate (Si) LED-on-Si Mirror layer deposition Carrier Substrate Bonding Silicon substrate removal Mirror layer Mirror layer Light Absorption by Si: Impact on LED Structure and Process Illustration: Bonding and removal process for LED-On-Si LED Applications
  • 8. © 2014• 8 Copyrights © Yole Développement SA. All rights reserved. Dec. 2013 Plessey PLW114050: 64 lm/W Jul. 2013 Plessey LED PLW111010 : 36 lm/W30 60 120 150 180 0 Seoul Semiconductor STW8Q14C 175 lm/w Apr. 2013 Low and Mid power package, cold white (5000-5500k) Best performance based on company claims Samsung LM561B 170 lm/W Everlight L62-217D 150 lm/W Osram Lab result: 104lm/W Lumileds Luxeon 3535 2D 150 lm/W Toshiba TL1F2 140 lm/W In development (no release date) Sapphire Silicon Cree XLamp XH 170 lm/w Toshiba TL2FK : 110 lm/W 90 Cree Lab > 200 lm/w LED-On-Si Performance: Commercial Status (Q1-2014) Lattice Power* LPIBB55A: 140 lm/W *Available as die. Lm/w of white package Led is extrapolated LED Applications
  • 9. © 2014• 9 Copyrights © Yole Développement SA. All rights reserved. Cost Simulation Process Flow • A generic “Yole LED-On-Si” die manufacturing process flow was created (below). The visual process flow is presented in the following slides. • Die manufacturing was modeled all the way through dicing. Packaging is not included. • For comparisons, a process flow for a generic “Yole – Vertical LED on Sapphire” was simulated (including Laser Lift Off and Bonding). 1) Epitaxy 2) Si Carrier Preparation 3) Wafer Processing 4) Bonding 5) Back end 0 LED Applications
  • 10. © 2014• 10 Copyrights © Yole Développement SA. All rights reserved. Key Players Industry (2) Country Type Status Product (s) Technology Diameter Comments Company A CN Emerging LED maker In production LED Die Strain engineering + trenches. 2”. 6” in development Total investment > US$120m Offering both Sapphire and Si based LED chips Company B KR Large group R&D Packaged LED ? ? First LED company to adopt 6” sapphire for volume manufacturing. Company C JP #1 LED Maker R&D Packaged LED ? ? Concluded that Si platform is not competitive against sapphire Company D DE Leading LED Maker R&D/Pilot Packaged LED Licensed from XXX in 2009, + collaboration with U. of Magdeburg and internal effort 6” Significant progress with Si but no commitment yet regarding volume manufacturing Company E US Leading LED Maker R&D Packaged LED ? 3”, 6” Concluded that Si platform is not competitive against sapphire in the short/mid term Company F UK Emerging LED maker In production Packaged LED Strain engineering + SiN interlayers for dislocation control. Thin epistructure (2.5 µm). 6” LED Technology acquired in 2011 from XXX, a Cambridge University spin off LED Applications
  • 11. © 2014• 11 Copyrights © Yole Développement SA. All rights reserved. Start-up or LED company looking for “Fabless” model Will LED-on-Si Happen? Large Semiconductor company with existing CMOS capacity Tier one LED Maker with advanced LED on sapphire technology and large installed capacity Incentive Incentive for Si adoption vary from one LED maker to another! Samsung, TSMC, Toshiba… Aledia, Glo, smaller LED makers with limited access to capital… Will “LED foundry” service emerge? LED Applications
  • 12. © 2014• 12 Copyrights © Yole Développement SA. All rights reserved. Power GaN Introduction • AC to DC or DC to AC conversion is always associated with substantial energy losses that increase with higher power and operating frequencies. Existing and emerging energy production and transport technologies require high performance conversion device in order to perform efficiently and save energy. • GaN based power electronics have the potential to significantly improve efficiency at both high power and frequencies while reducing device complexity and weight. Wind Solid State Transformers Electric & Hybrid Vehicles – Buck/booster converters, Inverters. Digitally controlled converters & regulators Source: EPRI “The green Grid”, Georgia Tech IT Power Electronics Applications
  • 13. © 2014• 13 Copyrights © Yole Développement SA. All rights reserved. Recent M&A, Investments and Fund Raisings in the GaN Area Power Electronics Applications 20102009 Funding: €14.5M Nov 2010 2011 Acquisition of Velox Feb. 2011 Series C funding: $20M Feb 2011Series A&B funding: $18M Funding: €4M July 2011 Series D funding: $25M June 2011 Funding: $2.6M Nov 2011 CamGaN (UK) $16M funding over past 10 years 2012 Series B funding June 2012 Funding: €2.6M July 2012 Series E funding: $35M Sept. 2012 2013 UK gov. funding: ~$3M May 2013 DoE funding: ?$ Sept 2013
  • 14. © 2014• 14 Copyrights © Yole Développement SA. All rights reserved. 2020 projection GaN device state-of-the-art (V & Amp) vs. application requests Requested current / chip 200V 1.2kV0 Requested Voltage 600V 1.7kV 2.5kV+ Commercialized Motor Drives PV InverterPFC / POL for telecom PFC / POL for consumer UPS < 1kW EV/HEV Inverter UPS > 1kW EV/HEV charger Wind Turbine Rail traction prototyping 0 >50A 5A 20A Power Electronics Applications
  • 15. © 2014• 15 Copyrights © Yole Développement SA. All rights reserved. GaN-on-Si Epiwafers Will Reach 1.6 % of the Overall Power Substrate Volume by 2020… Power Electronics Applications Next slide
  • 16. © 2014• 16 Copyrights © Yole Développement SA. All rights reserved. Main Specifications of Players (1/2) Company Company A Company B Company C Company D Country GE US JP BE Business Model Power Electronics RF, Power Electronics and LED LED Power Electronics Power Electronics RF Products Template Epiwafer Epiwafer Epiwafers Epiwafer TD 5X10-8 10-9 GaN thickness Up to 6 µm / / Typically 2µm for RF and 4.5 µm for power Diameter Up to 8” 6”, 8”? 3", 4", 5"and 6“ from 2” up to 6” Comments Focus on Power Electronics Market (600 V), Licensing I for LED applications Joined the IMEC GaN on Si program in January 2011. Intend to supply GaN epiwafer to RF, Power and LED markets 8” coming soon 8” sampling, GaN on Si Market
  • 17. © 2014• 17 Copyrights © Yole Développement SA. All rights reserved. Compound Semiconductors reports from YOLE UV LED MARKET LED Packaging LED Front End Manufacturing Technologies GaAs Wafer Market & Applications III-V Epitaxy Substrates & Equipment Market Sapphire CoSim+ New! Sapphire for Electronics, Car, Defense… Status of the LED Industry New!New! Bulk & freestanding GaN New! Diamonds SiC Market 2013 New! Graphene
  • 18. © 2014• 18 Copyrights © Yole Développement SA. All rights reserved. Yole Activities © 2012 18 MEDIA News portal/Technology magazines/ Webcasts/Communication services REPORTS Market & technology/Patent Investigation/Reverse costing CONSULTING Market research/Technology & Strategy/Patent Investigation/ Reverse costing www.yole.fr www.yolefinance.fr YOLE FINANCE M&A/ Due Diligence/ Fundraising/ Technology brokerage SISTER COMPANY Reverse engineering & costing/ Cost simulation tools
  • 19. © 2014• 19 Copyrights © Yole Développement SA. All rights reserved. For More Information… Please take a look at our websites: www.yole.fr Yole Développement corporate website www.i-micronews.com News Portal - free online registration to our publications www.systemplus.fr Sister company; expert in teardown & reverse costing analysis www.yolefinance.com Separate Yole business unit dedicated to financial services Follow us on Our Offices & Contact Information
  • 20. © 2014• 20 Copyrights © Yole Développement SA. All rights reserved. Our Offices & Contact Information Europe Office • Yves Devigne, Europe Business Development Manager, Cell: 33 6 75 80 08 25 - Email: devigne@yole.fr • David Jourdan, Headquarter Sales Coordination & Customer Service, Tel: 33 472 83 01 90, Email: jourdan@yole.fr USA Office • Michael McLaughlin, Business Development Manager, Phone: (650) 931 2552 - Cell: (408) 839 7178 - Email: mclaughlin@yole.fr • Jeff Edwards, Sales Associate, Yole Inc., Cell: (972) 333 0986- Email: edwards@yole.fr Japan Office • For custom research: Yutaka Katano, General Manager, Yole Japan & President, Yole K.K. Phone: (81) 362 693 457 - Cell: (81) 80 3440 6466 - Fax: (81) 362 693 448 - Email: katano@yole.fr • For reports business: Takashi Onozawa, Sales Asia & General Manager, Yole K.K. Email: onozawa@yole.fr Korea Office • Hailey Yang, Business Development Manager Phone : (82) 2 2010 883 - Cell: (82) 10 4097 5810 - Fax: (82) 2 2010 8899 - Email: yang@yole.fr

×