Will high-frequency and high-power devices benefit from the diamond revolution as a replacement of Si, SiC and GaN?
$43M diamond material market in 2020 will be driven mainly by passive devices
Diamond materials have been in development for more than 50 years. Besides the traditional tooling applications (drilling, cutting…), the interest in diamond continues to grow for optical and thermal applications, and for new applications in semiconductor devices such as high-power devices and high-frequency devices able to work at elevated temperatures.
In fact, diamond’s unique physical and electrical properties, which include: the highest known thermal conductivity, a wide band gap, excellent electrical insulator properties, very high breakdown voltage and very high carrier mobility, make diamond an excellent candidate for electronic devices with ultimate performance.
However, the costs of diamond, as well as the remaining technology barriers limit the diamond material market to only a few applications and some high-end devices.
The diamond applications in electronic devices, such as high-voltage power electronics, high-frequency high-power devices, and high-power optoelectronic devices (laser diodes, LEDs), are the scope of the report.
Both passive (heat spreaders) and active (diodes, transistors) diamond solutions are considered in the market quantification.
Despite the high costs of high-quality materials, a large number of players are involved in the 2013 diamond materials market and its largest segment – R&D activities. Two scenarios for 2013-2020 diamond material market growth are presented in the report. According to the base scenario, the diamond materials market for semiconductor devices will surpass $43M and will be represented mainly by heat spreaders used in high-power device thermal management.
Access to high-quality diamond material is key for diamond device development
Electronic applications, such as Schottky diodes, transistors, etc., require high-quality single-crystalline CVD diamond, which has superior characteristics such as high carrier mobility, long carrier lifetimes, high breakdown fields and high thermal conductivity.
High quality low-defect diamond wafers produced from diamond crystal made by High-Pressure High-Temperature (HPHT) method are only a few mm in size. In comparison, the competing semiconductor materials such as SiC are already available in wafer sizes up to 150 mm. For future diamond-based active devices, it is crucial to increase the wafer size above 2-inch with the defect density 100 cm-2 and below. Different approaches to achieve free-standing wafers from thick diamond films are under development. A mosaic type method is currently approaching 2-inch wafer size, but the defect density needs to be reduced. According to our technology roadmap for single crystal diamond wafers...
More information on that report at http://www.i-mic
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