SPICE MODEL of TRS12E65C (Professional Model) in SPICE PARK
Upcoming SlideShare
Loading in...5
×
 

Like this? Share it with your network

Share

SPICE MODEL of TRS12E65C (Professional Model) in SPICE PARK

on

  • 157 views

SPICE MODEL of TRS12E65C (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

SPICE MODEL of TRS12E65C (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

Statistics

Views

Total Views
157
Views on SlideShare
152
Embed Views
5

Actions

Likes
0
Downloads
0
Comments
0

2 Embeds 5

http://www.spicepark.info 4
http://www11.jimdo.com 1

Accessibility

Upload Details

Uploaded via as Adobe PDF

Usage Rights

© All Rights Reserved

Report content

Flagged as inappropriate Flag as inappropriate
Flag as inappropriate

Select your reason for flagging this presentation as inappropriate.

Cancel
  • Full Name Full Name Comment goes here.
    Are you sure you want to
    Your message goes here
    Processing…
Post Comment
Edit your comment

SPICE MODEL of TRS12E65C (Professional Model) in SPICE PARK Document Transcript

  • 1. Device Modeling Report COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: TRS12E65C MANUFACTURER: TOSHIBA REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 1
  • 2. Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter IS N RS IKF CJO M VJ ISR BV IBV TT EG Model description Saturation Current Emission Coefficient Series Resistance High-injection Knee Current Zero-bias Junction Capacitance Junction Grading Coefficient Junction Potential Recombination Current Saturation Value Reverse Breakdown Voltage(a positive value) Reverse Breakdown Current(a positive value) Transit Time Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 2
  • 3. Forward Current Characteristics Circuit Simulation result 10A 1.0A 100mA 0V 0.5V 1.0V 1.5V 2.0V I(R1) V_V1 Evaluation circuit R1 0.01m V1 U1 TRS12E65C 0Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 3
  • 4. Comparison Graph Circuit Simulation result Comparison table VF (V) IF (A) Measurement Simulation %Error 0.1 0.810 0.811 0.12 0.2 0.833 0.834 0.12 0.5 0.870 0.872 0.23 1 0.910 0.914 0.44 2 0.980 0.981 0.10 5 1.150 1.150 0.00 10 1.410 1.410 0.00 All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 4
  • 5. Junction Capacitance Characteristic Circuit Simulation result 1.0n 100p 10p 1.0V I(V2)/(650V/1u) 10V 100V V(N16610) Evaluation circuit V2 0Vdc V2 = 650 V1 = 0 TD = 0 TR = 1us TF = 500ns PW = 100us PER = 500us U1 TRS12E65C V1 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 5
  • 6. Comparison Graph Circuit Simulation result Comparison table CT (pF) VR(V) Measurement Simulation %Error 1 555.000 538.000 -3.06 2 455.000 458.600 0.79 5 355.000 341.100 -3.92 10 280.000 260.000 -7.14 20 198.000 193.300 -2.37 50 127.000 128.300 1.02 100 90.000 94.100 4.56 All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 6
  • 7. Reverse Characteristic Circuit Simulation result 10uA 1.0uA 100nA 25V 50V 100V 150V 175V I(R1) V_V1 Evaluation circuit R1 100m U1 V1 0Vdc TRS12E65C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 7
  • 8. Comparison Graph Circuit Simulation result Comparison table IR (A) VR (V) Measurement Simulation %Error 25 4.20E-07 4.20E-07 0.01 100 1.07E-06 1.07E-06 -0.46 175 2.70E-06 2.70E-06 0.01 All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 8