SPICE MODEL of TRS10E65C (Professional Model) in SPICE PARK

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SPICE MODEL of TRS10E65C (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of TRS10E65C (Professional Model) in SPICE PARK

  1. 1. Device Modeling Report COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: TRS10E65C MANUFACTURER: TOSHIBA REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 1
  2. 2. Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter IS N RS IKF CJO M VJ ISR BV IBV TT EG Model description Saturation Current Emission Coefficient Series Resistance High-injection Knee Current Zero-bias Junction Capacitance Junction Grading Coefficient Junction Potential Recombination Current Saturation Value Reverse Breakdown Voltage(a positive value) Reverse Breakdown Current(a positive value) Transit Time Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 2
  3. 3. Forward Current Characteristics Circuit Simulation result 10A 9A 8A 7A 6A 5A 4A 3A 2A 1A 0A 0V 0.5V 1.0V 1.5V 2.0V I(R1) V_V1 Evaluation circuit R1 0.01m V1 U1 TRS10E65C 0Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 3
  4. 4. Comparison Graph Circuit Simulation result Comparison table VF (V) IF (A) Measurement Simulation %Error 0.1 0.908 0.906 -0.22 1 1.010 1.008 -0.20 2 1.080 1.075 -0.46 4 1.185 1.190 0.42 6 1.290 1.297 0.54 8 1.400 1.400 0.00 10 1.510 1.502 -0.53 All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 4
  5. 5. Junction Capacitance Characteristic Circuit Simulation result 1.0n 100p 10p 100mV I(V2)/(650V/1u) 1.0V 10V 100V V(N16610) Evaluation circuit V2 0Vdc V2 = 650 V1 = 0 TD = 0 TR = 1us TF = 500ns PW = 100us PER = 500us U1 TRS10E65C V1 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 5
  6. 6. Comparison Graph Circuit Simulation result Comparison table CT (pF) VR(V) Measurement Simulation %Error 0.1 597.000 602.500 0.92 0.2 583.000 589.500 1.11 0.5 550.000 555.400 0.98 1 500.000 509.400 1.88 2 437.000 443.700 1.53 5 335.000 337.500 0.75 10 263.000 258.600 -1.67 20 198.000 191.100 -3.48 50 125.000 125.000 0.00 100 88.000 90.300 2.61 All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 6
  7. 7. Reverse Characteristic Circuit Simulation result 10uA 1.0uA 100nA 10nA 1.0nA 100V I(R1) 200V 300V 400V 500V 600V V_V1 Evaluation circuit R1 100m V1 U1 TRS10E65C 0Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 7
  8. 8. Comparison Graph Circuit Simulation result Comparison table IR (A) VR (V) Measurement Simulation %Error 2.00E-09 408.00 388.40 -4.80 1.00E-08 480.00 475.60 -0.92 1.00E-07 580.00 579.50 -0.09 5.00E-07 650.00 649.90 -0.02 All Rights Reserved Copyright (C) Bee Technologies Inc. 2013 8

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