Device Modeling ReportCOMPONENTS: Power MOSFET Gate Driver for 3-             Phase DC MotorPART NUMBER: TPD7210FMANUFACTU...
Symbol and Pin Layout                              U1                              TPD7210F                               ...
CP1           CP2                    CPV                                                                      VDD         ...
Timing Chart and Truth TableCircuit Simulation Result                               7.0V                               6.0...
INPUT CharacteristicsCircuit Simulation Result          1.4V          50uA     1              2          1.2V          1.0...
Charge Pump Voltage CharacteristicsCircuit Simulation Result       36V       34V       32V       30V       28V       26V  ...
Charge Pump Voltage CharacteristicsEvaluation circuit                                                             U1      ...
High-Side Output Voltage CharacteristicsCircuit Simulation Result         32V                                             ...
High-Side Output Voltage CharacteristicsEvaluation circuit                                                             U1 ...
Low-Side Output Voltage CharacteristicsCircuit Simulation Result         20V                                              ...
Low-Side Output Voltage CharacteristicsEvaluation circuit                                                              U1 ...
Output ON Resistance CharacteristicsCircuit Simulation Result       8.0       7.0       6.0     SEL>>       4.0      -50mA...
Under Voltage Detection CharacteristicsCircuit Simulation Result        1.5V        1.0V        0.5V          0V       -0....
Switching Time CharacteristicsCircuit Simulation Result        5.5V                   VIN        4.0V                     ...
Switching Time CharacteristicsEvaluation circuit                                                         U1               ...
Oscillating Frequency CharacteristicsCircuit Simulation Result        2.0V        1.5V        V ROSC pin        1.0V      ...
FAULT Output CharacteristicsCircuit Simulation Result         1.0V         0.5V        SEL>>                    V(VFLT_IN:...
Truth Table (1/5)Circuit Simulation Result                               Mode #        1   2   3   4   5   6   7   8      ...
Truth Table (2/5)Circuit Simulation Result                               Mode #        17   18   19   20   21   22   23   ...
Truth Table (3/5)Circuit Simulation Result                               Mode #        33   34   35   36   37   38   39   ...
Truth Table (4/5)Circuit Simulation Result                               Mode #        49   50   51   52   53   54   55   ...
Truth Table (5/5)Evaluation circuit                                                          U1                           ...
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TPD7210Fのスパイスモデル

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TPD7210Fのスパイスモデル(東芝セミコンダクター社&ストレージ社)

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Transcript of "TPD7210Fのスパイスモデル"

  1. 1. Device Modeling ReportCOMPONENTS: Power MOSFET Gate Driver for 3- Phase DC MotorPART NUMBER: TPD7210FMANUFACTURER: TOSHIBA Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 1
  2. 2. Symbol and Pin Layout U1 TPD7210F ENB COSC ROSC CPV IN1 WU IN2 VU IN3 UU IN4 UB IN5 PGND2 IN6 VB SGND1 PGND1 CP1 WB SGND2 FAULT CP2 VDD All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 2
  3. 3. CP1 CP2 CPV VDD HUU UO UU DD U UUI I SS U2 S1 S S3 S U1 CMPTPD7201F HVU UO VU + + + + CMPTPD7201F - - DD U H1 - - 0 - - 0 + + CMP2 VUI I SS VDD OPR Ref 1 Ref 2 HWU UO SGND UVD WU S2 S S4 S V(VDD)+14 REF2 DD U + + + + UVD IN+ OUT+ OPR - - 0 - - 0 IN- OUT- 32.5Vdc I SS WUI REF1 0 EVALUE HUB BO Model Equivalent Circuit UB OPR DD B CMP1 UBI O I SS O Q /O I HVB BO /O VB CPON H4 DD B DdT VBI I SS O H3 CMP1 CMP2 HWB BO WB OSC LGCKT DD B WBI 5V7 I SS PGND1 IN+ OUT+ IN- OUT- RPGND2 E5V7 1U PGND2 EVALUE Limit( V(%IN+, %IN-), 0, 5.7 ) 5V7 osc OPR ROSC CLK ROSC HIN COSC SGND I-Logic UVD H2 OSC FLT0 OPR IN1O IN2O IN3O IN4O IN5O IN6O COSC FLT0 FAULT H5 FLT SGND IN1 IN2 IN3 IN4 IN5 IN6 ENB NFLT D I S RSGND2 1U UF NORLTPD7210F SGND1 All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 SGND1 SGND2 IN1 IN2 IN3 IN4 IN5 IN6 ENB3
  4. 4. Timing Chart and Truth TableCircuit Simulation Result 7.0V 6.0V 5.0V 4.0V V(VDD) 1 5.0V 2 10V 0V 5V >> 0V 1 V(IN1) 2 V(IN4) 1 5.0V 2 2.0V 0V -5.0V >> -0.2V 1 V(ENB) 2 V(H4:CPON) 1 5V 2 15V 0V 10V 5V >> 0V 1 V(UU) 2 V(UB) 10V 5V SEL>> 0V 0s 2ms 4ms 6ms 8ms 10ms 12ms 14ms 16ms 18ms 20ms V(FAULT) Time *Evaluation is made from the Sub-circuit inside the IC modelSimulation result IN ENB VOUT FAULT STATE L L L L H L L L Normal L H L L H H H L L L L H H L L H VDD under-voltage detection L H L H H H H H High-side H L L H Upper and lower short- Low-side H H L H circuit input detection All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 4
  5. 5. INPUT CharacteristicsCircuit Simulation Result 1.4V 50uA 1 2 1.2V 1.0V 0.8V 0.6V 25uA 0.4V 0.2V 0V >> -0.2V 0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V 5.0V 1 V(HIN.IN101) 2 -I(V1) V_V1Evaluation circuit OPR UU HIN IN1O IN2O IN3O IN4O IN5O IN6O I-Logic OPR FLT0 SGND ENB IN1 IN2 IN3 IN4 IN5 IN6 V1 IN1 IN2 IN3 IN4 IN5 IN6 ENB I VENB 0 5 *Evaluation is made from the Sub-circuit inside the IC modelSimulation result Parameter Condition Unit Measurement Simulation %Error VIH 2.7 2.7 0 V VIL 2.45 2.45 0 IIH VIN = 5V 50 50 0 uA IIL VIN = 0V 0 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 5
  6. 6. Charge Pump Voltage CharacteristicsCircuit Simulation Result 36V 34V 32V 30V 28V 26V 24V 22V 20V 18V 16V 1.60ms 1.64ms 1.68ms 1.72ms 1.76ms 1.80ms 1.84ms 1.88ms 1.92ms 1.96ms V(CPV) TimeSimulation result Condition: CP1 = CP2 = 0.1F, ROSC = 62k, COSC = 270pF Condition Unit Measurement Simulation %Error Parameter VDD = 7V VIN1 to VIN6 = 0V V 18.9 (VDD+11.9) 19.7 4.23 VDD = 13.5V VCPV VIN1 to VIN6 = 0V V 27.5 (VDD+14) 27.5 0 VDD = 18V VIN1 to VIN6 = 0V V 32 (VDD+14) 32.1 0.31 All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 6
  7. 7. Charge Pump Voltage CharacteristicsEvaluation circuit U1 270p Cosc TPD7210F COSC ENB ENB COSC 0 C3 1u Rosc ROSC CPV ROSC CPV 0 62k IN1 WU D3 IN1 WU DCP IN2 IN2 VU VU 0 IN3 IN3 UU UU IN4 IN4 UB UB IN5 IN5 PGND2 IN6 IN6 VB VB SGND1 PGND1 0.1u C1 CP1 CP1 WB WB D2 CPV2 SGND2 FAULT VDD 0.1u C2 D1 DCP DCP CP2 RFLT CP2 VDD 13.5k FAULT VDD VDD 7 0 IN1 IN2 IN3 IN4 IN5 IN6 ENB VIN1 VIN2 VIN3 VIN4 VIN5 VIN6 VENB 0V 0V 0V 0V 0V 0V 5V 0 0 0 0 0 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 7
  8. 8. High-Side Output Voltage CharacteristicsCircuit Simulation Result 32V VDD=18V 28V VDD=13.5V 24V 20V VOH(H), VDD=7V 16V 12V V(UU) 200mV 150mV VOL(H), VDD=7 – 18 V 100mV 50mV SEL>> 0V 1.60ms 1.64ms 1.68ms 1.72ms 1.76ms 1.80ms 1.84ms 1.88ms 1.92ms 1.96ms V(VU) TimeSimulation result Condition: CP1 = CP2 = 0.1F, ROSC = 62k, COSC = 270pF Condition Unit Measurement Simulation %Error Parameter VDD = 7V, VIN = 5V, V 16.9 (VDD+9.9) 17.4 2.96 IO = -10mA VDD = 13.5V, VOH(H) VIN = 5V, V 25.5 (VDD+12) 25.7 0.78 IO = -10mA VDD = 18V, VIN = 5V, V 30 (VDD+12) 30.1 0.33 IO = -10mA VIN = 5V, VDROP IO = -10mA, V 2 2.07 3.5 VDROP=VCPV-VOH VDD = 7 to 18 V, VOL(H) VIN = 0V, V 0.1 0.1 0 IO = 0mA All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 8
  9. 9. High-Side Output Voltage CharacteristicsEvaluation circuit U1 270p Cosc TPD7210F C3 COSC 10u ENB ENB COSC 0 IC = 18.625 Rosc ROSC CPV ROSC CPV IO -10mA 0 WU 62k IN1 D3 IN1 WU VU DCP IN2 IN2 VU 0 UU IN3 IN3 UU 0 IN4 IN4 UB UB IN5 IN5 PGND2 IN6 IN6 VB VB SGND1 PGND1 0.1u C1 CP1 CP1 WB WB D2 CPV2 SGND2 FAULT VDD 0.1u C2 D1 DCP DCP CP2 RFLT CP2 VDD 13.5k FAULT VDD VDD 7 0 IN1 IN2 IN3 IN4 IN5 IN6 ENB VIN1 VIN2 VIN3 VIN4 VIN5 VIN6 VENB 5V 0V 0V 0V 0V 0V 5V 0 0 0 0 0 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 9
  10. 10. Low-Side Output Voltage CharacteristicsCircuit Simulation Result 20V VDD=18V 15V VDD=13.5V 10V VOH(L), VDD=7V 5V 0V V(UB) 200mV 150mV VOL(L), VDD=7 – 18 V 100mV 50mV SEL>> 0V 0s 40us 80us 120us 160us 200us 240us 280us 320us 360us V(VB) TimeSimulation result Condition: CP1 = CP2 = 0.1F, ROSC = 62k, COSC = 270pF Condition Unit Measurement Simulation %Error Parameter VDD = 7V, VIN = 5V, V 6.9 (VDD-0.1) 6.93 0.43 IO = -10mA VDD = 13.5V, VOH(L) VIN = 5V, V 13.4 (VDD-0.1) 13.43 0.22 IO = -10mA VDD = 18V, VIN = 5V, V 17.9 (VDD-0.1) 17.93 0.17 IO = -10mA VDD = 7 to 18 V, VOL(L) VIN = 0V, V 0.1 0.1 0 IO = 0mA All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 10
  11. 11. Low-Side Output Voltage CharacteristicsEvaluation circuit U1 270p Cosc TPD7210F C3 COSC 10u ENB ENB COSC 0 IC = 18.625 Rosc ROSC CPV ROSC CPV 0 WU 62k IN1 D3 IN1 WU VU DCP IN2 IN2 VU 0 UU IN3 IN3 UU UB IO -10mA IN4 IN4 UB IN5 IN5 PGND2 IN6 IN6 VB VB 0 SGND1 PGND1 0.1u C1 CP1 CP1 WB WB D2 CPV2 SGND2 FAULT VDD 0.1u C2 D1 DCP DCP CP2 RFLT CP2 VDD 13.5k FAULT VDD VDD 7 0 IN1 IN2 IN3 IN4 IN5 IN6 ENB VIN1 VIN2 VIN3 VIN4 VIN5 VIN6 VENB 0V 0V 0V 5V 0V 0V 5V 0 0 0 0 0 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 11
  12. 12. Output ON Resistance CharacteristicsCircuit Simulation Result 8.0 7.0 6.0 SEL>> 4.0 -50mA -100mA -1.0A (13.43-V(UB))/I(IO) -I_IO 5.0 4.5 4.0 50mA 100mA 1.0A (V(VB)-0.1)/ I(IO) I_IOEvaluation circuit VDD 1 VDD V1 13.5 1 VDD HUB BO UB GAIN = -1 DD B 0 0 1 I SS F1 F HVB BO VB DD B 0 0 I SS IO 0Adc 0 *Evaluation is made from the Sub-circuit inside the IC modelSimulation result Parameter Condition Unit Measurement Simulation %Error VDD = 13.5 V, RSOURCE VIN = 5 V, 7 6.857 -2.04 IO = -0.5 A  VDD = 13.5 V, RSINK VIN = 0 V, 4.5 4.499 -0.02 IO = -0.5 A All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 12
  13. 13. Under Voltage Detection CharacteristicsCircuit Simulation Result 1.5V 1.0V 0.5V 0V -0.5V 0V 2V 4V 6V 8V 10V 12V V(UVLO) V(VDD)Evaluation circuit V1 VDD T1 = 0 H1 V1 = 0 T2 = 1 VDD OPR V2 = 30 SGND UVD T3 = 2 Vsgnd V3 = 0 UVD UVLO OPR 0 0 *Evaluation is made from the Sub-circuit inside the IC modelSimulation result Parameter Condition Unit Measurement Simulation %Error VDDUV 5.5 5.5 0 V VDDUV 0.5 0.5 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 13
  14. 14. Switching Time CharacteristicsCircuit Simulation Result 5.5V VIN 4.0V 50% 2.0V 0V V(IN1) 14V VOUT 10V (VDD-3)90% 5V (VDD-3)10% SEL>> -2V 0s 2us td(ON) 4us 6us td(OFF) 8us 10us V(UU) tON Time tOFFSimulation result Parameter Condition Unit Measurement Simulation %Error td (ON) 0.25 0.251 0.4 VDD = 13.5V, tON VCPV = 13.5V, 0.5 0.504 0.8 COUT = 12400 pF, s td (OFF) 0.25 0.250 0 RG = 47  tOFF 0.5 0.495 -1.0 VDD = 13 V, tdead tdead = tOFF-td(on) s 0.25 0.244 -2.4 All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 14
  15. 15. Switching Time CharacteristicsEvaluation circuit U1 270p Cosc TPD7210F Rosc COSC ENB ENB COSC 0 C3 2.2u 62k ROSC CPV 0 ROSC CPV 0 WU IN1 D3 IN1 WU VU DCP VIN1 IN2 VU UU TD = 2.45u IN3 UU UB TR = 100n TF = 100n IN4 UB PW = 4.9u PER = 1 IN5 PGND2 VB V1 = 0 RG1 V2 = 5 IN6 VB 47 SGND1 PGND1 C1 0.1u WB CP1 Ciss1 CP1 WB 12400p D2 CPV2 SGND2 FAULT VDD 0.1u C2 D1 DCP DCP CP2 RFLT CP2 VDD 13.5k ENB FAULT VDD VDD VENB 13.5 5V 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 15
  16. 16. Oscillating Frequency CharacteristicsCircuit Simulation Result 2.0V 1.5V V ROSC pin 1.0V 0.5V SEL>> V COSC pin 0V V(ROSC) V(COSC) OSC clock (inside the IC) 1.0V 0.5V 0V 0s 10us 20us 30us 40us 50us 60us 70us 80us 90us v(osc) TimeEvaluation circuit 5V7 5V7 osc ROSC CLK ROSC COSC SGND COSC H2 OSC Rosc 62k Cosc 270p 0 *Evaluation is made from the Sub-circuit inside the IC modelSimulation result Parameter Condition Unit Measurement Simulation %Error VDD = 7-18V, fOSC ROSC = 62 k, kHz 100 99.82 -0.18 COSC = 270 pF All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 16
  17. 17. FAULT Output CharacteristicsCircuit Simulation Result 1.0V 0.5V SEL>> V(VFLT_IN:+) 20V td(ON) 10V 0V V(FAULT) 1.0mA 100uA IFAULT, Leakage 10uA 1.0uA 5.6us 6.0us 6.4us 6.8us 7.2us 7.6us 8.0us 8.4us 8.8us 9.2us -I(RFLT) TimeEvaluation circuit VDD FAULT H1 FLT VFLT_IN V RFLT D 18k 0 I V1 = 0 S V V2 = 1 TD = 1.45u TR = 100n SGND TF = 100n PW = 4.9u PER = 1 *Evaluation is made from the Sub-circuit inside the IC modelSimulation result Parameter Condition Unit Measurement Simulation %Error IFAULT, Max.  mA 5 5.01 0.2 VDD = 7-18V, VFAULT IFAULT = 1mA V 0.8 0.799 -0.13 VDD = 7-18V, IFAULT, Leakage VFAULT = 18V A 10 9.637 -3.63 td(FAULT)  s 1[Max.] 0.5  All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 17
  18. 18. Truth Table (1/5)Circuit Simulation Result Mode # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 IN1 DSTM1:PIN1 L H L L L L L H H H L L L L L L IN2 DSTM2:PIN1 L L H L L L H L L L H H H L L L IN3 DSTM3:PIN1 L L L H L L L L L L L L L H H H IN4 DSTM4:PIN1 L L L L H L L H L L H L L H L L IN5 DSTM5:PIN1 L L L L L H L L H L L H L L H L IN6 DSTM6:PIN1 L L L L L L H L L H L L H L L H Mode # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 1 15V 2 3 30V 45V L H L L L L L L H H L L L L L L 0V 15V 30V L L H L L L H L L L H L H L L L -15V 0V 15V L L L H L L L L L L L L L H H L >> -15V -38V 0V 1 V(UU) 2 V(VU) 3 V(WU) 1 15V 2 3 30V 45V L L L L H L L L L L H L L H L L 0V 15V 30V -15V L L L L L H L L H L L L L L H L 0V 15V SEL>> -15V L L L L L L H L L H L L H L L L -38V 0V 0s 5us 15us 25us 35us 45us 55us 65us 75us 1 V(UB) 2 V(VB) 3 V(WB) Time All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 18
  19. 19. Truth Table (2/5)Circuit Simulation Result Mode # 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 IN1 DSTM1:PIN1 H L H L L L H H H L L L H H H H IN2 DSTM2:PIN1 H H L L L L H H H H H H L L L L IN3 DSTM3:PIN1 L H H L L L L L L H H H H H H L IN4 DSTM4:PIN1 L L L H L H H L L H L L H L L H IN5 DSTM5:PIN1 L L L H H L L H L L H L L H L H IN6 DSTM6:PIN1 L L L L H H L L H L L H L L H L Mode # 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 1 15V 2 3 30V 45V H L H L L L L L H L L L L H L L 0V 15V 30V H H L L L L L L H H L L L L L L -15V 0V 15V L H H L L L L L L H L L L H L L >> -15V -38V 0V 1 V(UU) 2 V(VU) 3 V(WU) 1 15V 2 3 30V 45V L L L H L H L L L H L L L L L L 0V 15V 30V -15V L L L H H L L L L L L L L H L L 0V 15V L L L L H H L L H L L L L L L L SEL>> -15V -38V 0V 0s 5us 15us 25us 35us 45us 55us 65us 75us 1 V(UB) 2 V(VB) 3 V(WB) Time All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 19
  20. 20. Truth Table (3/5)Circuit Simulation Result Mode # 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 IN1 DSTM1:PIN1 H H L L L L L L H L H H H L L L IN2 DSTM2:PIN1 L L H H H L L L H L H H H H H H IN3 DSTM3:PIN1 L L L L L L H H H L L L L H H H IN4 DSTM4:PIN1 L H H L H H L H L H H L H H L H IN5 DSTM5:PIN1 H L H H L H H L L H H H L H H L IN6 DSTM6:PIN1 H H L H H L H H L H L H H L H H Mode # 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 1 15V 2 3 30V 45V H L L L L L L L H L L L L L L L 0V 15V 30V L L L L H L L L H L L L L L L L -15V 0V 15V L L L L L H L L H L L L L L L L SEL>> -15V -38V 0V 1 V(UU) 2 V(VU) 3 V(WU) 1 15V 2 3 30V 45V L L L L H H L L L H L L L L L L 0V 15V 30V -15V H L L L L H L L L H L L L L L L 0V 15V >> -15V H L L L H L L L L H L L L L L L -38V 0V 0s 5us 15us 25us 35us 45us 55us 65us 75us 1 V(UB) 2 V(VB) 3 V(WB) Time All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 20
  21. 21. Truth Table (4/5)Circuit Simulation Result Mode # 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 IN1 DSTM1:PIN1 H H H H H H H L L H H H H L H H IN2 DSTM2:PIN1 L L L H H H L H L H H H H H L H IN3 DSTM3:PIN1 H H L H H H L L H H H H L H H H IN4 DSTM4:PIN1 H L H H L L H H H H L H H H H H IN5 DSTM5:PIN1 H H L L H L H H H H H L H H H H IN6 DSTM6:PIN1 L H H L L H H H H L H H H H H H Mode # 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 1 15V 2 3 30V 45V L L L L L L L L L L L L L L L L 0V 15V 30V L L L L L L L L L L L L L L L L -15V 0V 15V L L L L L L L L L L L L L L L L SEL>> -15V -38V 0V 1 V(UU) 2 V(VU) 3 V(WU) 1 15V 2 3 30V 45V L L L L L L L L L L L L L L L L 0V 15V 30V -15V L L L L L L L L L L L L L L L L 0V 15V -30V >> L L L L L L L L L L L L L L L L -20V 0V 0s 5us 15us 25us 35us 45us 55us 65us 75us 1 V(UB) 2 V(VB) 3 V(WB) Time All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 21
  22. 22. Truth Table (5/5)Evaluation circuit U1 270p Cosc TPD7210F Rosc COSC UI1 62k ENB ENB COSC 0 DSTM1 BUF ROSC IN1 0 ROSC CPV VDD WU F1 1 2 IN1 IN1 WU VU IN2 RG3 UI2 IN2 VU 47 UU DSTM2 BUF IN3 RG2 IN3 UU 12400p Ciss3 IN2 UB 47 F1 1 2 IN4 RG1 IN4 UB Ciss2 12400p 47 IN5 IN5 PGND2 12400p Ciss1 UI3 VB DSTM3 BUF IN6 IN3 IN6 VB F1 1 2 SGND1 PGND1 0.1u C1 D2 WB DCP CP1 UI4 CP1 WB DSTM4 BUF SGND2 FAULT 0.1u C2 IN4 RG6 RG5 RG4 13.5k RFLT 1 2 CP2 F1 CP2 VDD 47 47 47 CPV2 D1 UI5 DCP FAULT DSTM5 BUF D3 VDD 12400p 12400p 12400p IN5 DCP C3 VDD Ciss6 Ciss5 Ciss4 F1 1 2 2.2u 13.5 ENB UI6 VENB DSTM6 BUF 5V IN6 0 F1 1 2 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2012 22

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