Device Modeling ReportCOMPONENTS: Power MOSFET (Standard)PART NUMBER: TPCF8A01MANUFACTURER: TOSHIBABody Diode (Standard) /...
POWER MOSFET MODEL Pspice model                                       Model description  parameterLEVELL               Cha...
Body Diode Model Pspice model                                       Model description   parameterIS              Saturatio...
Vgs-Id CharacteristicCircuit Simulation result                   10A                    8A                    6A          ...
Comparison GraphCircuit Simulation ResultSimulation Result                                     VGS(V)     ID(A)           ...
Id-Rds(on) CharacteristicCircuit Simulation resultEvaluation circuit                                           U2         ...
Gate Charge CharacteristicCircuit Simulation result                    6.0V                    5.0V                    4.0...
Capacitance Characteristic                                                          Measurement                           ...
Switching Time CharacteristicCircuit Simulation result                         7.0V                                       ...
Output CharacteristicCircuit Simulation result                         10       3.0V                                      ...
Forward Current Characteristic of Reverse DiodeCircuit Simulation ResultEvaluation Circuit                                ...
Comparison GraphCircuit Simulation ResultSimulation Result                        Vfwd(V)                   Vfwd(V)     If...
Reverse Recovery CharacteristicCircuit Simulation ResultEvaluation Circuit                                                ...
Reverse Recovery Characteristic                                        ReferenceTrj=6.6(ns)Trb=10.4(ns)Conditions:Ifwd=lre...
ESD PROTECTION DIODE SPICE MODELZener Voltage CharacteristicCircuit Simulation ResultEvaluation Circuit                   ...
Zener Voltage Characteristic                                         Reference          All Rights Reserved Copyright (c) ...
Forward Current Characteristic of Schottky Barrier DiodeCircuit Simulation ResultEvaluation Circuit                       ...
Comparison GraphCircuit Simulation ResultSimulation Result                               Vfwd (V)      Ifwd (A)           ...
Junction Capacitance Characteristic of Schottky Barrier DiodeCircuit Simulation ResultEvaluation Circuit                  ...
Comparison GraphCircuit Simulation ResultSimulation Result                                  Cj(pF)       Vrev(V)         M...
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SPICE MODEL of TPCF8A01 (Standard+BDS+SBDS Model) in SPICE PARK

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SPICE MODEL of TPCF8A01 (Standard+BDS+SBDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of TPCF8A01 (Standard+BDS+SBDS Model) in SPICE PARK

  1. 1. Device Modeling ReportCOMPONENTS: Power MOSFET (Standard)PART NUMBER: TPCF8A01MANUFACTURER: TOSHIBABody Diode (Standard) / ESD Protection Diode /Schottky Barrier Diode (Standard) Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  2. 2. POWER MOSFET MODEL Pspice model Model description parameterLEVELL Channel LengthW Channel WidthKP TransconductanceRS Source Ohmic ResistanceRD Ohmic Drain ResistanceVTO Zero-bias Threshold VoltageRDS Drain-Source Shunt ResistanceTOX Gate Oxide ThicknessCGSO Zero-bias Gate-Source CapacitanceCGDO Zero-bias Gate-Drain CapacitanceCBD Zero-bias Bulk-Drain Junction CapacitanceMJ Bulk Junction Grading CoefficientPB Bulk Junction PotentialFC Bulk Junction Forward-bias Capacitance CoefficientRG Gate Ohmic ResistanceIS Bulk Junction Saturation CurrentN Bulk Junction Emission CoefficientRB Bulk Series ResistancePHI Surface Inversion PotentialGAMMA Body-effect ParameterDELTA Width effect on Threshold VoltageETA Static Feedback on Threshold VoltageTHETA Modility ModulationKAPPA Saturation Field FactorVMAX Maximum Drift Velocity of CarriersXJ Metallurgical Junction DepthUO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  3. 3. Body Diode Model Pspice model Model description parameterIS Saturation CurrentN Emission CoefficientRS Series ResistanceIKF High-injection Knee CurrentCJO Zero-bias Junction CapacitanceM Junction Grading CoefficientVJ Junction PotentialISR Recombination Current Saturation ValueBV Reverse Breakdown Voltage(a positive value)IBV Reverse Breakdown Current(a positive value)TT Transit Time All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  4. 4. Vgs-Id CharacteristicCircuit Simulation result 10A 8A 6A 4A 2A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(V2) V_V1Evaluation circuit U5 OP EN OP EN OP EN OP EN OP EN V2 R1 0V dc 10 0M EG V1 10 Vd c V3 0 10 Vd c 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  5. 5. Comparison GraphCircuit Simulation ResultSimulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.10 1.30 1.30 -0.32 0.20 1.33 1.33 0.07 0.50 1.40 1.40 0.09 1.00 1.49 1.48 -0.51 2.00 1.60 1.60 0.00 5.00 1.84 1.84 0.19 10.00 2.15 2.13 -0.73 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  6. 6. Id-Rds(on) CharacteristicCircuit Simulation resultEvaluation circuit U2 OPEN OPEN OPEN OPEN OPEN V1 R1 0Vdc 100MEG TPCF8A01 0 VG VD 2.5Vdc 10Vdc 0Simulation Result ID=1.5A, VGS=2.5V Measurement Simulation Error (%) R DS (on) 50.00 m 50.00 m 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  7. 7. Gate Charge CharacteristicCircuit Simulation result 6.0V 5.0V 4.0V 3.0V 2.0V 1.0V 0V 0 1n 2n 3n 4n 5n 6n 7n 8n 9n 10n V(W1:3) Time*10msEvaluation circuit U2 V2 OPEN OPEN 0Vdc OPEN Dbreak R1 PER = 1000u D1 100MEG PW = 600u I2 TF = 10n W1 TR = 10n + 6Adc TD = 0 0 I2 = 10m - I1 W I1 = 0 IOFF = 1mA V1 ION = 0uA 24Vdc 0Simulation Result VDD=16V Measurement Simulation Error (%) ,ID=3A Qgs 1.30 nC 1.29 nC -0.56 Qgd 2.10 nC 2.11 nC 0.24 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  8. 8. Capacitance Characteristic Measurement SimulationSimulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.50 55.00 54.65 -0.64 1.00 45.00 45.70 1.56 2.00 36.00 35.50 -1.39 5.00 23.00 22.93 -0.30 10.00 15.00 15.53 3.53 20.00 10.00 10.00 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  9. 9. Switching Time CharacteristicCircuit Simulation result 7.0V VDS = 10V 6.0V VGS = 5V 4.0V 2.0V 0V 5.00us 5.05us 5.09us V(2) V(3)/2 TimeEvaluation circuit L1 RL 3 V3 0.03uH 6.67 OPEN 0Vdc U8 Rop OPEN OPEN VDD 100MEG 10 OPEN OPEN R1 L2 0 2 0.03uH 0 V1 = 0 4.7 V1 V2 = 10 R2 TD = 5u TR = 6n 4.7 TF = 7n PW = 5u PER = 100u 0 0 0Simulation Result ID=3A, VDD=15V Measurement Simulation Error(%) VGS=0/5V td (on) 7.50 ns 7.53 ns 0.43 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  10. 10. Output CharacteristicCircuit Simulation result 10 3.0V 2.1V 2.0V 1.9V 1.8V 1.7V 1.6V 1.5V VGS=1.4VEvaluation circuit U2 OPEN OPEN OPEN OPEN OPEN V1 R1 0Vdc 100MEG TPCF8A01 0 VG VD 2.5Vdc 10Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  11. 11. Forward Current Characteristic of Reverse DiodeCircuit Simulation ResultEvaluation Circuit U2 OPEN OPEN OPEN OPEN OPEN R2 R1 0.01m 100MEG TPCF8A01 V1 0Vdc 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  12. 12. Comparison GraphCircuit Simulation ResultSimulation Result Vfwd(V) Vfwd(V) Ifwd(A) Measurement Simulation %Error 0.10 0.60 0.59 -0.50 0.20 0.63 0.63 0.48 0.50 0.69 0.69 0.14 1.00 0.74 0.74 0.00 2.00 0.80 0.80 0.00 5.00 0.91 0.91 0.44 10.00 1.05 1.05 -0.10 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  13. 13. Reverse Recovery CharacteristicCircuit Simulation ResultEvaluation Circuit U2 OPEN OPEN OPEN OPEN OPEN R2 R1 50 100MEG TPCF8A01 V1 = -10 V2 V2 = 10.6 TD = 0 0 TR = 10n TF = 10n PW = 20u PER = 50u 0Compare Measurement vs. Simulation Measurement Simulation Error (%) trr=trj+trb 17.00 ns 17.13 ns 0.78 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  14. 14. Reverse Recovery Characteristic ReferenceTrj=6.6(ns)Trb=10.4(ns)Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  15. 15. ESD PROTECTION DIODE SPICE MODELZener Voltage CharacteristicCircuit Simulation ResultEvaluation Circuit U2 OPEN OPEN OPEN OPEN OPEN OPEN R2 OPEN R1 0.01m 100MEG TPCF8A01 V1 0Vdc 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  16. 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  17. 17. Forward Current Characteristic of Schottky Barrier DiodeCircuit Simulation ResultEvaluation Circuit TPCF8A01 OPEN OPEN OPEN OPEN OPEN R2 U2 R1 0.01m 100MEG V1 0Vdc 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  18. 18. Comparison GraphCircuit Simulation ResultSimulation Result Vfwd (V) Ifwd (A) %Error Measurement Simulation 0.01 0.31 0.31 0.59 0.02 0.33 0.33 0.18 0.05 0.36 0.35 -0.87 0.10 0.38 0.37 -0.43 0.20 0.40 0.40 0.10 0.50 0.45 0.44 -0.63 1.00 0.49 0.49 0.67 2.00 0.57 0.58 1.25 5.00 0.80 0.80 -0.29 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  19. 19. Junction Capacitance Characteristic of Schottky Barrier DiodeCircuit Simulation ResultEvaluation Circuit TPCF8A01 OPEN OPEN OPEN OPEN OPEN V2 U2 R1 V1 = 0 V1 0Vdc 100MEG V2 = 20 TD = 0 TR = 1u TF = 10n 0 PW = 50u PER = 100u 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  20. 20. Comparison GraphCircuit Simulation ResultSimulation Result Cj(pF) Vrev(V) Measurement Simulation %Error 1.00 145.00 143.57 -0.99 2.00 110.00 110.40 0.37 5.00 75.00 74.44 -0.75 10.00 54.00 54.12 0.22 20.00 40.00 39.14 -2.15 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

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