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Device Modeling Report

COMPONENTS: MOSFET (Model Parameters)
PART NUMBER: TPCC8066-H
MANUFACTURER: TOSHIBA
REMARK: Body D...
MOSFET MODEL
PSpice model
parameter
LEVEL
L
W
KP
RS
RD
VTO
RDS
TOX
CGSO
CGDO
CBD
MJ
PB
FC
RG
IS
N
RB
PHI
GAMMA
DELTA
ETA
T...
Transconductance Characteristics
Circuit Simulation Result
40.00

Measurement
Simulation

gfs(S)

30.00

20.00

10.00

0.0...
Vgs-Id Characteristics
Circuit Simulation result
20A

15A

10A

5A

0A
0V

1.0V

2.0V

3.0V

4.0V

5.0V

I(V3)
V_V1

Evalu...
Comparison Graph
Circuit Simulation Result
20.00

Measurement
Simulation

Drain Current ID (A)

15.00

10.00

5.00

0.00
0...
Rds(on) Characteristics
Circuit Simulation result

5.0A

4.0A

3.0A

2.0A

1.0A

0A
0V

20mV

40mV

60mV

70mV

I(V3)
V_VD...
Gate Charge Characteristics
Circuit Simulation result
1

12V

2

30V

8V

20V

4V

10V

>>
0V

0V
0
1

V(W1:2)

4n
2

8n

...
Capacitance Characteristics

Measurement
Simulation

Simulation Result
Cbd(pF)
VDS(V)
0.1
0.2
0.5
1
2
5
10
20
30

Measurem...
Switching Time Characteristics
Circuit Simulation result
12V

10V

8V

6V

4V

2V

0V
0.96us
V(U1:4)

0.98us
1.00us
V(U1:5...
Output Characteristics
Circuit Simulation result
20A

10

3.4

4
4.5

16A

5
6
8

3.2

12A

8A

3

4A

VGS=2.7V
0A
0V

0.4...
Forward Current Characteristics
Circuit Simulation Result
100A

10A

1.0A

100mA
0V

-0.2V
I(Vsense)

-0.4V

-0.6V

-0.8V
...
Comparison Graph
Circuit Simulation Result

Drain Reverse Current IDR (A)

100.00

Measurement
Simulation

10.00

1.00

0....
Reverse Recovery Characteristics
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
0.88us...
Reverse Recovery Characteristics

Reference
Measurement

Trj= 12.0 (ns)
Trb= 21.6(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50

E...
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SPICE MODEL of TPCC8066-H (Standard+BDS Model) in SPICE PARK

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SPICE MODEL of TPCC8066-H (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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Transcript of "SPICE MODEL of TPCC8066-H (Standard+BDS Model) in SPICE PARK"

  1. 1. Device Modeling Report COMPONENTS: MOSFET (Model Parameters) PART NUMBER: TPCC8066-H MANUFACTURER: TOSHIBA REMARK: Body Diode (Model Parameters) Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 1
  2. 2. MOSFET MODEL PSpice model parameter LEVEL L W KP RS RD VTO RDS TOX CGSO CGDO CBD MJ PB FC RG IS N RB PHI GAMMA DELTA ETA THETA KAPPA VMAX XJ UO Model description Channel Length Channel Width Transconductance Source Ohmic Resistance Ohmic Drain Resistance Zero-bias Threshold Voltage Drain-Source Shunt Resistance Gate Oxide Thickness Zero-bias Gate-Source Capacitance Zero-bias Gate-Drain Capacitance Zero-bias Bulk-Drain Junction Capacitance Bulk Junction Grading Coefficient Bulk Junction Potential Bulk Junction Forward-bias Capacitance Coefficient Gate Ohmic Resistance Bulk Junction Saturation Current Bulk Junction Emission Coefficient Bulk Series Resistance Surface Inversion Potential Body-effect Parameter Width effect on Threshold Voltage Static Feedback on Threshold Voltage Mobility Modulation Saturation Field Factor Maximum Drift Velocity of Carriers Metallurgical Junction Depth Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 2
  3. 3. Transconductance Characteristics Circuit Simulation Result 40.00 Measurement Simulation gfs(S) 30.00 20.00 10.00 0.00 0.0 5.0 10.0 15.0 20.0 Drain Current ID (A) Comparison table gfs (s) Measurement Simulation Id(A) %Error 1 2 10.000 13.700 10.389 14.076 3.89 2.74 5 20.800 20.544 -1.23 10 27.500 26.737 -2.77 20 34.900 33.979 -2.64 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 3
  4. 4. Vgs-Id Characteristics Circuit Simulation result 20A 15A 10A 5A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(V3) V_V1 Evaluation circuit V3 0Vdc U1 TPCC8066-H V2 10 V1 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 4
  5. 5. Comparison Graph Circuit Simulation Result 20.00 Measurement Simulation Drain Current ID (A) 15.00 10.00 5.00 0.00 0.0 1.0 2.0 3.0 4.0 5.0 Gate - Source Voltage VGS (V) Simulation Result VGS(V) ID(A) 0.5 1 2 5 10 15 20 Measurement 2.430 2.500 2.600 2.730 2.870 3.000 3.150 Simulation 2.397 2.452 2.534 2.706 2.916 3.089 3.243 %Error -1.37 -1.92 -2.55 -0.89 1.60 2.98 2.96 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 5
  6. 6. Rds(on) Characteristics Circuit Simulation result 5.0A 4.0A 3.0A 2.0A 1.0A 0A 0V 20mV 40mV 60mV 70mV I(V3) V_VDS Evaluation circuit V3 0Vdc U1 TPCC8066-H VDS 0Vdc V1 10 0 Simulation Result ID =5.5A, VGS = 10V R DS (on) m Measurement 12.400 Simulation 12.400 %Error 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 6
  7. 7. Gate Charge Characteristics Circuit Simulation result 1 12V 2 30V 8V 20V 4V 10V >> 0V 0V 0 1 V(W1:2) 4n 2 8n 12n 16n V(U1:7) Time*1mA Evaluation circuit U1 TPCC8066-H I1 TD = 0 TF = 5n PW = 600u PER = 1000u I1 = 0 I2 = 1m TR = 5n 0 D2 Dbreak W1 I2 11 VDD + W IOFF = 1mA ION = 0uA 24 0 Simulation Result VDD=24V, ID=11A, VGS=10V Qgs nC Qgd nC Qg nC Measurement 3.400 1.600 15.000 Simulation %Error 3.399 1.607 13.329 -0.03 0.44 -11.14 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 7
  8. 8. Capacitance Characteristics Measurement Simulation Simulation Result Cbd(pF) VDS(V) 0.1 0.2 0.5 1 2 5 10 20 30 Measurement 725.000 635.000 485.000 375.000 285.000 190.000 138.000 100.000 82.000 Simulation %Error 726.000 633.000 485.800 376.800 283.500 189.200 137.900 100.110 82.900 0.14 -0.31 0.16 0.48 -0.53 -0.42 -0.07 0.11 1.10 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 8
  9. 9. Switching Time Characteristics Circuit Simulation result 12V 10V 8V 6V 4V 2V 0V 0.96us V(U1:4) 0.98us 1.00us V(U1:5)/1.51 1.02us 1.04us 1.06us Time Evaluation circuit L2 RL 50nH 2.73 U1 TPCC8066-H VDD 15.1Vdc V2 V1 = 0 V2 = 20 TD = 1u TR = 5n TF = 5n PW = 10u PER = 20u R1 4.7 L1 30nH R2 4.7 0 Simulation Result ID=5.5A, VDD=15V VGS=10/0V ton ns Measurement 7.500 Simulation %Error 7.489 -0.15 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 9
  10. 10. Output Characteristics Circuit Simulation result 20A 10 3.4 4 4.5 16A 5 6 8 3.2 12A 8A 3 4A VGS=2.7V 0A 0V 0.4V 0.8V 1.2V 1.6V 2.0V I(V3) V_V2 Evaluation circuit V3 0Vdc U1 TPCC8066-H V2 V1 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 10
  11. 11. Forward Current Characteristics Circuit Simulation Result 100A 10A 1.0A 100mA 0V -0.2V I(Vsense) -0.4V -0.6V -0.8V -1.0V V_VDS Evaluation Circuit Vsense 0Vdc U1 TPCC8066-H VDS 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 11
  12. 12. Comparison Graph Circuit Simulation Result Drain Reverse Current IDR (A) 100.00 Measurement Simulation 10.00 1.00 0.10 0.0 0.2 0.4 0.6 0.8 1.0 Drain - Source Voltage -VDS (V) Simulation Result IDR(A) 0.1 0.2 0.5 1 2 5 10 20 -VDS(V) Measurement Simulation 0.660 0.6591 0.678 0.6782 0.703 0.7046 0.725 0.7266 0.755 0.7522 0.800 0.7982 0.850 0.8530 0.945 0.9441 %Error -0.13 0.03 0.23 0.22 -0.37 -0.22 0.35 -0.09 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 12
  13. 13. Reverse Recovery Characteristics Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 0.88us I(R1) 0.96us 1.04us 1.12us 1.20us 1.28us Time Evaluation Circuit R1 50 V1 = -9.35v V2 = 10.7v TD = 30ns TR = 10ns TF = 10ns PW = 1us PER = 100us U1 TPCC8066-H V1 0 Compare Measurement vs. Simulation Parameter Unit trj ns Measurement 12.000 Simulation 12.192 %Error 1.60 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 13
  14. 14. Reverse Recovery Characteristics Reference Measurement Trj= 12.0 (ns) Trb= 21.6(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 14

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