Device Modeling Report

COMPONENTS: Power MOSFET (Standard)
PART NUMBER: TPCA8128
MANUFACTURER: TOSHIBA
Body Diode (Standa...
MOSFET MODEL
PSpice model
parameter
LEVEL
L
W
KP
RS
RD
VTO
RDS
TOX
CGSO
CGDO
CBD
MJ
PB
FC
RG
IS
N
RB
PHI
GAMMA
DELTA
ETA
T...
Transconductance Characteristics
Circuit Simulation Result
200
Measurement
Simulation

150

Gf s (S)

100

50

0

0

20

4...
Vgs-Id Characteristics
Circuit Simulation result
-100A

-80A

-60A

-40A

-20A

0A
0V

-1.0V

-2.0V

-3.0V

-4.0V

I(V3)
V...
Comparison Graph
Circuit Simulation Result
100
Measurement
Simulation

Drain Current ID (-A)

80

60

40

20

0
0.0

1.0
2...
Rds(on) Characteristics
Circuit Simulation result

-20.0A
-17.5A
-15.0A
-12.5A
-10.0A
-7.5A
-5.0A
-2.5A
0A
0V

-20mV

-40m...
Gate Charge Characteristics
Circuit Simulation result
-20V

-15V

-10V

-5V

0V
0

40n

80n

120n

160n

V(W1:4)
Time*1mA
...
Capacitance Characteristics

Measurement
Simulation

Simulation Result

Cbd(pF)
VSD(V)
0.1
0.2
0.5
1
2
5
10
20
30

Measure...
Switching Time Characteristics
Circuit Simulation result

-12V

-10V

-8V

-6V

-4V

-2V

0V
0.90us
V(U1:4)

0.95us
V(U1:5...
Output Characteristics
Circuit Simulation result
-100A

-10

-3
-2.8

-3.2
-3.6
-3.8

-80A

-60A

-4.5

-2.6
-2.5

-40A

-...
BODY DIODE SPICE MODEL
Forward Current Characteristics
Circuit Simulation Result
100A

10A

1.0A

100mA
0V

0.2V
I(Vsense)...
Comparison Graph
Circuit Simulation Result

Drain reverse current IDR (A)

100.000

Measurement
Simulation

10.000

1.000
...
Reverse Recovery Characteristics
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
0.2us ...
Reverse Recovery Characteristics

Reference

Measurement

Trj= 20 (ns)
Trb= 120 (ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50

Ex...
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SPICE MODEL of TPCA8128 (Standard+BDS Model) in SPICE PARK

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SPICE MODEL of TPCA8128 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of TPCA8128 (Standard+BDS Model) in SPICE PARK

  1. 1. Device Modeling Report COMPONENTS: Power MOSFET (Standard) PART NUMBER: TPCA8128 MANUFACTURER: TOSHIBA Body Diode (Standard) Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 1
  2. 2. MOSFET MODEL PSpice model parameter LEVEL L W KP RS RD VTO RDS TOX CGSO CGDO CBD MJ PB FC RG IS N RB PHI GAMMA DELTA ETA THETA KAPPA VMAX XJ UO Model description Channel Length Channel Width Transconductance Source Ohmic Resistance Ohmic Drain Resistance Zero-bias Threshold Voltage Drain-Source Shunt Resistance Gate Oxide Thickness Zero-bias Gate-Source Capacitance Zero-bias Gate-Drain Capacitance Zero-bias Bulk-Drain Junction Capacitance Bulk Junction Grading Coefficient Bulk Junction Potential Bulk Junction Forward-bias Capacitance Coefficient Gate Ohmic Resistance Bulk Junction Saturation Current Bulk Junction Emission Coefficient Bulk Series Resistance Surface Inversion Potential Body-effect Parameter Width effect on Threshold Voltage Static Feedback on Threshold Voltage Mobility Modulation Saturation Field Factor Maximum Drift Velocity of Carriers Metallurgical Junction Depth Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 2
  3. 3. Transconductance Characteristics Circuit Simulation Result 200 Measurement Simulation 150 Gf s (S) 100 50 0 0 20 40 60 80 100 Drain Current ID (-A) Comparison table gfs(S) -Id(A) Measurement Simulation Error (%) 2 5 10 27.000 42.000 62.000 27.849 43.330 60.195 3.14 3.17 -2.91 20 50 85.000 127.000 83.059 125.256 -2.28 -1.37 100 169.000 168.304 -0.41 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 3
  4. 4. Vgs-Id Characteristics Circuit Simulation result -100A -80A -60A -40A -20A 0A 0V -1.0V -2.0V -3.0V -4.0V I(V3) V_V1 Evaluation circuit V3 0Vdc U1 TPCA8128 V1 V2 -10 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 4
  5. 5. Comparison Graph Circuit Simulation Result 100 Measurement Simulation Drain Current ID (-A) 80 60 40 20 0 0.0 1.0 2.0 3.0 Gate - Source Voltage VGS (-V) 4.0 Simulation Result -VGS(V) -ID(A) Measurement Error (%) Simulation 2 1.850 1.912 3.36 5 10 20 40 60 80 1.950 2.050 2.200 2.400 2.550 2.700 1.996 2.093 2.232 2.435 2.595 2.734 2.37 2.08 1.46 1.46 1.78 1.25 100 2.850 2.858 0.28 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 5
  6. 6. Rds(on) Characteristics Circuit Simulation result -20.0A -17.5A -15.0A -12.5A -10.0A -7.5A -5.0A -2.5A 0A 0V -20mV -40mV -60mV -75mV I(V3) V_VDS Evaluation circuit V3 0Vdc U1 TPCA8128 VDS 0Vdc V1 -10 0 Simulation Result ID= -17A, VGS= -10V R DS (on) mΩ Measurement 3.700 Simulation 3.698 Error (%) -0.07 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 6
  7. 7. Gate Charge Characteristics Circuit Simulation result -20V -15V -10V -5V 0V 0 40n 80n 120n 160n V(W1:4) Time*1mA Evaluation circuit U1 TPCA8128 + I1 I2 34 VDD - I1 = 0 I2 = 1m TD = 0 TR = 5n TF = 5n PW = 600u PER = 1000u D2 Dbreak ION = 0uA IOFF = 1mA W W1 0 -24 0 Simulation Result VDD= -24V ,ID=-34A ,VGS= -10V Qgs nC Qgd nC Qg nC Measurement 11.000 30.000 115.000 Simulation Error (%) 11.092 30.446 64.357 0.84 1.49 -44.04 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 7
  8. 8. Capacitance Characteristics Measurement Simulation Simulation Result Cbd(pF) VSD(V) 0.1 0.2 0.5 1 2 5 10 20 30 Measurement 360.000 325.000 265.000 220.000 175.000 130.000 100.000 77.000 65.000 Simulation Error (%) 359.600 325.200 266.300 219.100 175.500 127.870 99.690 77.430 66.710 -0.11 0.06 0.49 -0.41 0.29 -1.64 -0.31 0.56 2.63 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 8
  9. 9. Switching Time Characteristics Circuit Simulation result -12V -10V -8V -6V -4V -2V 0V 0.90us V(U1:4) 0.95us V(U1:5)/1.5 1.00us 1.05us 1.10us Time Evaluation circuit L2 RL 50nH 0.88 U1 TPCA8128 L1 30nH R2 4.7 R1 4.7 V2 PER = 20u PW = 10u TF = 5n TR = 5n TD = 1u V2 = 20 V1 = 0 VDD -15Vdc 0 Simulation Result ID= -17A, VDD= -15V VGS=0/-10V ton ns Measurement 21.000 Simulation Error (%) 21.188 0.90 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 9
  10. 10. Output Characteristics Circuit Simulation result -100A -10 -3 -2.8 -3.2 -3.6 -3.8 -80A -60A -4.5 -2.6 -2.5 -40A -2.4 -2.3 -20A -2.2 VGS= -2.1 0A 0V -1.0V -2.0V -3.0V -4.0V I(V3) V_V2 Evaluation circuit V3 0Vdc U1 TPCA8128 V2 -4 V1 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 10
  11. 11. BODY DIODE SPICE MODEL Forward Current Characteristics Circuit Simulation Result 100A 10A 1.0A 100mA 0V 0.2V I(Vsense) 0.4V 0.6V 0.8V 1.0V 1.2V V_VDS Evaluation Circuit Vsense 0Vdc VDS U1 TPCA8128 VGS 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 11
  12. 12. Comparison Graph Circuit Simulation Result Drain reverse current IDR (A) 100.000 Measurement Simulation 10.000 1.000 0.100 0 0.2 0.4 0.6 0.8 1 1.2 Drain - Source voltage VDS (V) Simulation Result IDR(A) 0.1 0.2 0.5 1 2 5 10 20 50 100 VDS (V) Measurement Simulation 0.600 0.599 0.620 0.621 0.650 0.651 0.675 0.674 0.700 0.699 0.735 0.737 0.775 0.773 0.820 0.822 0.920 0.918 1.030 1.031 Error (%) -0.16 0.18 0.11 -0.14 -0.16 0.24 -0.20 0.29 -0.25 0.07 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 12
  13. 13. Reverse Recovery Characteristics Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 0.2us 0.4us I(R1) 0.6us 0.8us 1.0us 1.2us 1.4us 1.6us 1.8us Time Evaluation Circuit R1 V1 = -9.4v V2 = 10.6v TD = 20ns TR = 10ns TF = 10ns PW = 1us PER = 100us V1 50 U1 TPCA8128 0 Compare Measurement vs. Simulation Measurement trj ns 20.000 Simulation Error (%) 20.127 0.63 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 13
  14. 14. Reverse Recovery Characteristics Reference Measurement Trj= 20 (ns) Trb= 120 (ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 14

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