LTspice Standard Model of TPC8014(TOSHIBA)

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LTspice Standard Model of TPC8014(TOSHIBA). This SPICE Model is Standard Model. Standard Model means parameter model. We check parametric simulation using LTspice.

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LTspice Standard Model of TPC8014(TOSHIBA)

  1. 1. TOSHIBA MOSFET SPICE MODEL: TPC8014• SPICE Model Parameter• Transistor hFE-IC Characteristid• VCE(SAT) Characteristic• VBE(SAT) Characteristic• Output Characteristic All Rights Reserved Copyright (C) Bee Technologies Corporation 2011 1
  2. 2. SPICE Model Parameter*$ *$*PART NUMBER: TPC8014 .subckt DZTPC8014 1 2*MANUFACTURER: TOSHIBA D2 1 3 DZ2*VDSS=30V, ID=11A D1 2 3 DZ1*All Rights Reserved Copyright (c) Bee Technologies Inc. 2011 .model DZ1 D.SUBCKT TPC8014 1 2 3 4 5 6 7 8 + IS=0.01p N=0.1 ISR=0M_M1 6 4 3 3 MTPC8014 + CJO=3E-12 BV=22.423 IBV=0.001 RS=0X_U1 4 3 DZTPC8014 .model DZ2 DD_D1 3 6 DTPC8014 + IS=0.01p N=0.1 ISR=0R_R1 1 3 0.01m + CJO=3E-12 BV=22.423 IBV=0.001 RS=411.11R_R2 2 3 0.01m .ENDSR_R5 5 6 0.01m *$R_R7 7 6 0.01mR_R8 8 6 0.01m.MODEL MTPC8014 NMOS+ LEVEL=3 L=720.00E-9 W=.45 KP=66.000E-6 RS=1.0000E-3+ RD=6.8436E-3 VTO=2.3063 RDS=3.0000E6 TOX=40.000E-9+ CGSO=2.0126E-9 CGDO=827.11E-12 RG=12.45+ CBD=342.86E-12 MJ=.70573 PB=.3905+ RB=1 N=5 IS=1E-15 GAMMA=0 KAPPA=0 ETA=0.5m.MODEL DTPC8014 D+ IS=824.87E-12 N=1.2770 RS=6.2420E-3 IKF=7.3139+ CJO=3.0000E-12 BV=60 IBV=100.00E-6 TT=24.062E-9.ENDS*$ All Rights Reserved Copyright (C) Bee Technologies Corporation 2011 2
  3. 3. Transconductance Characteristics (1/2)L W W=0.45 L=600E-9 L=720.00E-9 W=0.7 L=800E-9 W=0.3 All Rights Reserved Copyright (C) Bee Technologies Corporation 2011 3
  4. 4. Transconductance Characteristics (2/2)KP Evaluation Circuit KP=5.5u KP=80E-6 KP=6.5u KP=66E-6 KP=4.5u KP=50E-6 All Rights Reserved Copyright (C) Bee Technologies Corporation 2011 4
  5. 5. Vgs-Id CharacteristicsVTO Evaluation Circuit VTO=2.2 VTO=2.6625 VTO=3 All Rights Reserved Copyright (C) Bee Technologies Corporation 2011 5
  6. 6. Rds(on) CharacteristicRD Evaluation Circuit RD=6.8436E-3 RD=5.8E-3 RD=7.8E-3 All Rights Reserved Copyright (C) Bee Technologies Corporation 2011 6
  7. 7. Gate Charge Characteristic (1/2)CGSO CGDO CGDO=827.11E-12 CGSO=2.0126E-9 CGDO=600.11E-12 CGSO=1E-9 CGSO=3E-9 CGDO=1027.11E-12 All Rights Reserved Copyright (C) Bee Technologies Corporation 2011 7
  8. 8. Gate Charge Characteristic (2/2)Evaluation Circuit All Rights Reserved Copyright (C) Bee Technologies Corporation 2011 8
  9. 9. Switching Time CharacteristicRG Evaluation Circuit RG=12.45 RG=30 RG=30 RG=0.5 RG=12.45 RG=0.5 All Rights Reserved Copyright (C) Bee Technologies Corporation 2011 9
  10. 10. Output CharacteristicETA Evaluation Circuit 3.3 ETA=3m 3.2 3.4 3.5 ETA=1u ETA=0.5m 4 3.1 6 8 3.0 10 2.9 2.8 2.7 VG=2.6V All Rights Reserved Copyright (C) Bee Technologies Corporation 2011 10
  11. 11. BODY DIODE SPICE MODELForward Current Characteristic (1/3)IS N N= 1 N= 1.277 IS=324E-12 IS=1324.E-12 N= 1.4 IS=824.87E-12 All Rights Reserved Copyright (C) Bee Technologies Corporation 2011 11
  12. 12. Forward Current Characteristic (2/3)RS IKF RS= 4E-3 IKF=25.3 RS=6.2420E-3 RS=8.3E-3 IKF=7.3139 IKF=1.3 All Rights Reserved Copyright (C) Bee Technologies Corporation 2011 12
  13. 13. Forward Current Characteristic (3/3)Evaluation Circuit All Rights Reserved Copyright (C) Bee Technologies Corporation 2011 13
  14. 14. Reverse Recovery CharacteristicTT Evaluation Circuit TT= 0.01E-9 TT=24.062E-9 TT=60E-9 All Rights Reserved Copyright (C) Bee Technologies Corporation 2011 14
  15. 15. ESD PROTECTION DIODEZener Voltage Characteristic (1/2)BV RS RS=100 BV=20 RS=411.11 BV=22.423 RS=700 BV=25 All Rights Reserved Copyright (C) Bee Technologies Corporation 2011 15
  16. 16. Zener Voltage Characteristic (1/2)Evaluation Circuit All Rights Reserved Copyright (C) Bee Technologies Corporation 2011 16

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