SPICE MODEL of TK8P25DA (Standard+BDS Model) in SPICE PARK

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SPICE MODEL of TK8P25DA (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of TK8P25DA (Standard+BDS Model) in SPICE PARK

  1. 1. Device Modeling Report COMPONENTS: MOSFET (Model Parameters) PART NUMBER: TK8P25DA MANUFACTURER: TOSHIBA REMARK: Body Diode (Model Parameters) Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
  2. 2. MOSFET MODEL PSpice model parameter LEVEL L W KP RS RD VTO RDS TOX CGSO CGDO CBD MJ PB FC RG IS N RB PHI GAMMA DELTA ETA THETA KAPPA VMAX XJ UO Model description Channel Length Channel Width Transconductance Source Ohmic Resistance Ohmic Drain Resistance Zero-bias Threshold Voltage Drain-Source Shunt Resistance Gate Oxide Thickness Zero-bias Gate-Source Capacitance Zero-bias Gate-Drain Capacitance Zero-bias Bulk-Drain Junction Capacitance Bulk Junction Grading Coefficient Bulk Junction Potential Bulk Junction Forward-bias Capacitance Coefficient Gate Ohmic Resistance Bulk Junction Saturation Current Bulk Junction Emission Coefficient Bulk Series Resistance Surface Inversion Potential Body-effect Parameter Width effect on Threshold Voltage Static Feedback on Threshold Voltage Mobility Modulation Saturation Field Factor Maximum Drift Velocity of Carriers Metallurgical Junction Depth Surface Mobility All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
  3. 3. Transconductance Characteristics Circuit Simulation result 100 Measurement Simulation gfs (S) 10 1 VDS=10 0 0 2 4 6 8 V 10 Drain current ID (A) Comparison table gfs (S) ID (A) Measurement Simulation %Error 1 3.380 3.420 1.18 2 4.830 4.837 0.14 5 7.650 7.649 -0.01 10 10.817 10.815 -0.02 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
  4. 4. Vgs-Id Characteristics Circuit Simulation result 12.5A 10.0A 5.0A 0A 0V 2V 4V 6V 8V 10V -I(VDS) V_VGS Evaluation circuit U1 TK8P25DA VDS 10V VGS 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
  5. 5. Comparison Graph Circuit Simulation result Measurement Simulation Drain current ID (A) 10 5 VDS=10V 0 0.0 2.0 4.0 6.0 8.0 10.0 Gate-source voltage VGS (V) Comparison table VGS (V) ID (A) Measurement Simulation %Error 1 3.540 3.568 0.79 2 3.810 3.810 0.00 5 4.260 4.291 0.73 10 4.820 4.832 0.25 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
  6. 6. Rds(on) Characteristics Circuit Simulation result 3.8A 3.0A 2.0A 1.0A 0A 0V 0.4V 0.8V 1.2V 1.6V -I(VDS) V_VDS Evaluation circuit U1 TK8P25DA VDS VGS 10V 0 Test condition: VGS=10(V), ID=3.8(A) Parameter Unit RDS(on) Ω Measurement 0.410 Simulation 0.411 %Error 0.24 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
  7. 7. Output Characteristics Circuit Simulation result 10A 5V 6V 4.75V 10V 8A 4.5V 6A 4.25V 4A 4V 2A 3.75V VGS=3.5V 0A 0V 2V 4V 6V 8V 10V -I(VDS) V_VDS Evaluation circuit U1 TK8P25DA VDS VGS 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
  8. 8. Capacitance Characteristics Simulation result Measurement Simulation Comparison table Cbd (pF) VDS (V) Measurement Simulation %Error 0.1 638 637.11 -0.14 1 450 460.06 2.24 10 194 189.36 -2.39 100 39 40.87 4.79 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
  9. 9. Gate Charge Characteristics Circuit Simulation result 12.5V 10.0V 7.5V 5.0V 2.5V 0V 0s 5ns 10ns 15ns 20ns V(W1:3) Time*1m Evaluation circuit D1 DMod ID 7.5A U1 TK8P25DA W1 VDD 200V + I1 = 0 I2 = 1m TF = 10n TR = 10n TD = 0 PER = 1 PW = 10m IG W IOFF = 1mA ION = 0 0 Test condition: VDD=200(V), VGS=10(V), ID=7.5(A) Parameter Unit Measurement Simulation %Error Qgs nc 3.300 3.299 -0.03 Qgd nc 5.300 5.296 -0.08 Qg nc 16.000 12.085 -24.47 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9
  10. 10. Switching Time Characteristics Circuit Simulation result 14V 12V 10V 8V 6V 4V 2V 0V 1.84us 1.92us V(G) V(D)/10 2.00us 2.08us 2.16us 2.24us Time Evaluation circuit L2 D 2 1 50nH L1 30nH R1 1 V1 = 0 V2 = 10V TD = 2u TR = 1n TF = 1n PW = 10u PER = 1000u U1 TK8P25DA 2 RL 26.4 G 50 VDD 100V V1 0 Test condition: VDD=100(V), VGS=0/10(V), ID=3.8(A) Parameter Unit ton ns Measurement 32.000 Simulation 35.481 %Error 10.88 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 10
  11. 11. Body Diode Forward Current Characteristics Circuit Simulation result 100A 10A 1.0A 100mA 0V -0.4V I(VDS) -0.8V -1.2V -1.6V -2.0V -2.4V V_VDS Evaluation circuit VDS U1 TK8P25DA 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 11
  12. 12. Comparison Graph Simulation result 100 Measurement Drian reverse current IDR (A) Simulation 10 1 0.1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 Drain - source voltage -VDS (V) Comparison table -VDS (V) IDR (A) Measurement Simulation %Error 0.1 0.675 0.666 -1.33 0.2 0.701 0.700 -0.14 0.5 0.750 0.751 0.13 1 0.793 0.803 1.26 2 0.862 0.876 1.62 5 1.040 1.028 -1.15 10 1.230 1.221 -0.73 20 1.546 1.552 0.39 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 12
  13. 13. Reverse Recovery Characteristics Circuit Simulation result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 9.5us I(R1) 10.0us 10.5us 11.0us 11.5us Time Evaluation circuit R1 50 V1 = -9.4V V2 = 10.7V TD = 150ns TR = 5ns TF = 5ns PW = 10us PER = 1ms U1 TK8P25DA V1 0 Comparison Measurement vs. Simulation Parameter Unit trj ns Measurement 136.000 Simulation 132.496 %Error -2.58 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 13
  14. 14. Reverse Recovery Characteristics Reference Measurement Trj = 136(ns) Trb = 72(ns) Conditions: Ifwd = lrev = 0.2(A), Rl = 50 Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 14

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