Device Modeling Report

COMPONENTS: MOSFET (Model Parameters)
PART NUMBER: TK50J60U
MANUFACTURER: TOSHIBA
REMARK: Body Dio...
MOSFET MODEL
PSpice model
parameter
LEVEL
L
W
KP
RS
RD
VTO
RDS
TOX
CGSO
CGDO
CBD
MJ
PB
FC
RG
IS
N
RB
PHI
GAMMA
DELTA
ETA
T...
Transconductance Characteristics
Circuit Simulation Result
100
Measurement
Simulation
80

gf s (S)

60

40

20

0

0

20

...
Vgs-Id Characteristics
Circuit Simulation result
80A

60A

40A

20A

0A
0V

2V

4V

6V

8V

10V

I(V3)
V_V1

Evaluation ci...
Comparison Graph
Circuit Simulation Result
80
Measurement
Simulation

Drain Current ID (A)

60

40

20

0
0

2

4

6

8

1...
Rds(on) Characteristics
Circuit Simulation result
25A

20A

15A

10A

5A

0A
0V

0.35V

0.70V

1.05V

1.40V

I(V3)
V_VDS

...
Gate Charge Characteristics
Circuit Simulation result
20V
18V
16V
14V
12V
10V
8V
6V
4V
2V
0V
0

20n

40n

60n

80n

100n

...
Capacitance Characteristics

Measurement
Simulation

Simulation Result
VDS (V)
0.1
0.2
0.5
1.0
2.0
5.0
10
20

Cbd (pF)
Mea...
Switching Time Characteristics
Circuit Simulation result
1

12V

2

240V

11V

220V

10V

200V

9V

180V

8V

160V

7V

14...
Output Characteristics
Circuit Simulation result
100A

10

8

7.5

80A

60A

7
6.8

40A

6.5
20A

VGS=6V
0A
0V

4V

8V

12...
Forward Current Characteristics
Circuit Simulation Result
100A

10A

1.0A

100mA
0V

0.3V

0.6V

0.9V

1.2V

1.5V

I(Vsens...
Comparison Graph
Circuit Simulation Result

Drain reverse current IDR (A)

100.0

Measurement
Simulation

10.0

1.0

0.1
0...
Reverse Recovery Characteristics
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
4us

8...
Reverse Recovery Characteristics

Reference

Measurement

Trj= 0.960 (us)
Trb= 1.760 (us)
Conditions:Ifwd=lrev=0.2(A),Rl=5...
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SPICE MODEL of TK50J60U (Standard+BDS Model) in SPICE PARK

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SPICE MODEL of TK50J60U (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of TK50J60U (Standard+BDS Model) in SPICE PARK

  1. 1. Device Modeling Report COMPONENTS: MOSFET (Model Parameters) PART NUMBER: TK50J60U MANUFACTURER: TOSHIBA REMARK: Body Diode (Model Parameters) Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 1
  2. 2. MOSFET MODEL PSpice model parameter LEVEL L W KP RS RD VTO RDS TOX CGSO CGDO CBD MJ PB FC RG IS N RB PHI GAMMA DELTA ETA THETA KAPPA VMAX XJ UO Model description Channel Length Channel Width Transconductance Source Ohmic Resistance Ohmic Drain Resistance Zero-bias Threshold Voltage Drain-Source Shunt Resistance Gate Oxide Thickness Zero-bias Gate-Source Capacitance Zero-bias Gate-Drain Capacitance Zero-bias Bulk-Drain Junction Capacitance Bulk Junction Grading Coefficient Bulk Junction Potential Bulk Junction Forward-bias Capacitance Coefficient Gate Ohmic Resistance Bulk Junction Saturation Current Bulk Junction Emission Coefficient Bulk Series Resistance Surface Inversion Potential Body-effect Parameter Width effect on Threshold Voltage Static Feedback on Threshold Voltage Mobility Modulation Saturation Field Factor Maximum Drift Velocity of Carriers Metallurgical Junction Depth Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 2
  3. 3. Transconductance Characteristics Circuit Simulation Result 100 Measurement Simulation 80 gf s (S) 60 40 20 0 0 20 40 60 80 100 Drain Current ID (A) Comparison table gfs (s) Measurement Simulation Id(A) Error (%) 1 2 7.700 10.950 7.953 11.214 3.29 2.41 5 17.250 17.619 2.14 10 24.250 24.737 2.01 20 50 33.750 52.000 34.629 53.674 2.60 3.22 100 72.000 74.256 3.13 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 3
  4. 4. Vgs-Id Characteristics Circuit Simulation result 80A 60A 40A 20A 0A 0V 2V 4V 6V 8V 10V I(V3) V_V1 Evaluation circuit V3 0Vdc V2 U1 TK50J60U 10 V1 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 4
  5. 5. Comparison Graph Circuit Simulation Result 80 Measurement Simulation Drain Current ID (A) 60 40 20 0 0 2 4 6 8 10 Gate - Source Voltage VGS (V) Simulation Result VGS(V) ID(A) 2 5 10 20 50 80 Measurement 5.35 5.6 5.875 6.275 7.15 7.800 Simulation 5.557 5.764 5.999 6.340 7.018 7.515 Error (%) 3.87 2.93 2.11 1.04 -1.85 -3.65 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 5
  6. 6. Rds(on) Characteristics Circuit Simulation result 25A 20A 15A 10A 5A 0A 0V 0.35V 0.70V 1.05V 1.40V I(V3) V_VDS Evaluation circuit V3 0Vdc VDS U1 TK50J60U 0Vdc V1 10 0 Simulation Result ID = 25A, VGS = 10V R DS (on) m Measurement 56.000 Simulation Error (%) 56.000 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 6
  7. 7. Gate Charge Characteristics Circuit Simulation result 20V 18V 16V 14V 12V 10V 8V 6V 4V 2V 0V 0 20n 40n 60n 80n 100n V(W1:3) Time*1mA Evaluation circuit U1 TK50J60U PER = 1000u PW = 600u TF = 5n TR = 5n TD = 0 I2 = 1m I1 = 0 D2 Dbreak I2 50 W1 VDD + I1 W IOFF = 1mA ION = 0uA 400 0 Simulation Result VDD=400V, ID=50A, Measurement VGS=10V Qgs nC 23.000 Qgd nC 25.000 Qg nC 67.000 Simulation Error (%) 24.995 23.913 60.201 8.67 -4.35 -10.15 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 7
  8. 8. Capacitance Characteristics Measurement Simulation Simulation Result VDS (V) 0.1 0.2 0.5 1.0 2.0 5.0 10 20 Cbd (pF) Measurement Simulation 28300.00 27725.00 25280.00 25800.00 22000.00 22600.00 18820.00 19000.00 16100.00 15850.00 11550.00 11680.00 9492.00 9425.00 7330.00 7250.00 Error (%) -2.03 2.06 2.73 0.96 -1.55 1.13 -0.71 -1.09 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 8
  9. 9. Switching Time Characteristics Circuit Simulation result 1 12V 2 240V 11V 220V 10V 200V 9V 180V 8V 160V 7V 140V 6V 120V 5V 100V 4V 80V 3V 60V 2V 40V >> 0V 20V 0V 0.4us 1 0.8us V(L1:2) 2 1.2us V(U1:D) 1.6us 2.0us 2.4us Time Evaluation circuit L2 50nH L1 R1 V1 = 0 V2 = 20 TD = 1u TR = 5n TF = 5n PW = 10u PER = 20u 50 RL 8 U1 TK50J60U 30nH VDD 200Vdc V2 R2 50 0 Simulation Result ID=25A, VDD=200V VGS=0/10V ton ns Measurement 200.000 Simulation Error (%) 309.077 54.54 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 9
  10. 10. Output Characteristics Circuit Simulation result 100A 10 8 7.5 80A 60A 7 6.8 40A 6.5 20A VGS=6V 0A 0V 4V 8V 12V 16V 20V I(V3) V_V2 Evaluation circuit V3 0Vdc V2 U1 TK50J60U 20 V1 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 10
  11. 11. Forward Current Characteristics Circuit Simulation Result 100A 10A 1.0A 100mA 0V 0.3V 0.6V 0.9V 1.2V 1.5V I(Vsense) V_VSD Evaluation Circuit Vsense 0Vdc VSD U1 TK50J60U 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 11
  12. 12. Comparison Graph Circuit Simulation Result Drain reverse current IDR (A) 100.0 Measurement Simulation 10.0 1.0 0.1 0 0.3 0.6 0.9 Source - Drain voltage VSD (V) 1.2 1.5 Simulation Result IDR(A) 0.1 0.2 0.5 1 2 5 10 20 50 100 VSD(V) Measurement Simulation 0.610 0.609 0.627 0.626 0.650 0.651 0.675 0.676 0.705 0.705 0.755 0.754 0.802 0.803 0.875 0.872 1.030 1.033 1.270 1.269 %Error -0.16 -0.16 0.15 0.15 0.03 -0.13 0.12 -0.34 0.29 -0.09 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 12
  13. 13. Reverse Recovery Characteristics Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 4us 8us I(R1) 12us 16us 20us 24us 28us 32us 36us 40us Time Evaluation Circuit R1 50 V1 = -9.45v V2 = 10.65v TD = 0.5us TR = 10ns TF = 10ns PW = 20us PER = 50us V1 U1 TK50J60U 0 Compare Measurement vs. Simulation Measurement trj µs 0.960 Simulation Error (%) 0.927 -3.44 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 13
  14. 14. Reverse Recovery Characteristics Reference Measurement Trj= 0.960 (us) Trb= 1.760 (us) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 14

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