All Rights Reserved Copyright (c) Bee Technologies Inc. 20091Device Modeling ReportBee Technologies Inc.COMPONENTS: MOSFET...
All Rights Reserved Copyright (c) Bee Technologies Inc. 20092MOSFET MODELPSpice modelparameterModel descriptionLEVELL Chan...
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009304812160 5 10 15 20gfs(S)Drain Current ID (A)MeasurementSimul...
All Rights Reserved Copyright (c) Bee Technologies Inc. 200940V220V10VdcV30VdcU1TK15A50DV_V10V 2V 4V 6V 8V 10V 12VI(V3)0A1...
All Rights Reserved Copyright (c) Bee Technologies Inc. 200950102030400 2 4 6 8 10 12DrainCurrentID(A)Gate - Source Voltag...
All Rights Reserved Copyright (c) Bee Technologies Inc. 200960V30VdcVDS0VdcV110U1TK15A50DV_VDS0V 0.4V 0.8V 1.2V 1.6V 2.0VI...
All Rights Reserved Copyright (c) Bee Technologies Inc. 20097VDD400I1TD = 0TF = 5nPW = 600uPER = 1000uI1 = 0I2 = 1mTR = 5n...
All Rights Reserved Copyright (c) Bee Technologies Inc. 20098Capacitance CharacteristicSimulation ResultVDS (V)Cbd (pF)Err...
All Rights Reserved Copyright (c) Bee Technologies Inc. 200990VDD200VdcV2TD = 1uTF = 5nPW = 10uPER = 20uV1 = 0TR = 5nV2 = ...
All Rights Reserved Copyright (c) Bee Technologies Inc. 200910V250V100V30VdcU1TK15A50DV_V20V 10V 20V 30V 40V 50VI(V3)0A10A...
All Rights Reserved Copyright (c) Bee Technologies Inc. 200911VSD0U1TK15A50DVsense0VdcV_VSD0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2...
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009120.11.010.0100.00 0.2 0.4 0.6 0.8 1 1.2 1.4Drainreversecurren...
All Rights Reserved Copyright (c) Bee Technologies Inc. 200913V1TD = 1.8usTF = 10nsPW = 20usPER = 200usV1 = -9.45vTR = 10n...
All Rights Reserved Copyright (c) Bee Technologies Inc. 200914Reverse Recovery Characteristic ReferenceTrj= 0.9 (us)Trb= 1...
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SPICE MODEL of TK15A50D (Professional+BDP Model) in SPICE PARK

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SPICE MODEL of TK15A50D (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of TK15A50D (Professional+BDP Model) in SPICE PARK

  1. 1. All Rights Reserved Copyright (c) Bee Technologies Inc. 20091Device Modeling ReportBee Technologies Inc.COMPONENTS: MOSFET (Professional Model)PART NUMBER: TK15A50DMANUFACTURER: TOSHIBAREMARK: Body Diode (Professional Model)
  2. 2. All Rights Reserved Copyright (c) Bee Technologies Inc. 20092MOSFET MODELPSpice modelparameterModel descriptionLEVELL Channel LengthW Channel WidthKP TransconductanceRS Source Ohmic ResistanceRD Ohmic Drain ResistanceVTO Zero-bias Threshold VoltageRDS Drain-Source Shunt ResistanceTOX Gate Oxide ThicknessCGSO Zero-bias Gate-Source CapacitanceCGDO Zero-bias Gate-Drain CapacitanceCBD Zero-bias Bulk-Drain Junction CapacitanceMJ Bulk Junction Grading CoefficientPB Bulk Junction PotentialFC Bulk Junction Forward-bias Capacitance CoefficientRG Gate Ohmic ResistanceIS Bulk Junction Saturation CurrentN Bulk Junction Emission CoefficientRB Bulk Series ResistancePHI Surface Inversion PotentialGAMMA Body-effect ParameterDELTA Width effect on Threshold VoltageETA Static Feedback on Threshold VoltageTHETA Mobility ModulationKAPPA Saturation Field FactorVMAX Maximum Drift Velocity of CarriersXJ Metallurgical Junction DepthUO Surface Mobility
  3. 3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009304812160 5 10 15 20gfs(S)Drain Current ID (A)MeasurementSimulationTransconductance CharacteristicCircuit Simulation ResultComparison tableId(A)gfs (s)Error (%)Measurement Simulation1.0 3.380 3.513 3.932.0 4.750 4.897 3.095.0 7.350 7.529 2.4410.0 10.150 10.326 1.7320.0 13.850 14.004 1.11
  4. 4. All Rights Reserved Copyright (c) Bee Technologies Inc. 200940V220V10VdcV30VdcU1TK15A50DV_V10V 2V 4V 6V 8V 10V 12VI(V3)0A10A20A30A40AVgs-Id CharacteristicCircuit Simulation resultEvaluation circuit
  5. 5. All Rights Reserved Copyright (c) Bee Technologies Inc. 200950102030400 2 4 6 8 10 12DrainCurrentID(A)Gate - Source Voltage VGS (V)MeasurementSimulationComparison GraphCircuit Simulation ResultSimulation ResultID(A)VGS(V)Error (%)Measurement Simulation1 5.200 5.198 -0.042 5.470 5.436 -0.625 5.960 5.917 -0.7210 6.520 6.476 -0.6720 7.250 7.295 0.6230 7.885 7.947 0.7940 8.450 8.513 0.75
  6. 6. All Rights Reserved Copyright (c) Bee Technologies Inc. 200960V30VdcVDS0VdcV110U1TK15A50DV_VDS0V 0.4V 0.8V 1.2V 1.6V 2.0VI(V3)0A2.0A4.0A6.0A8.0ARds(on) CharacteristicCircuit Simulation resultEvaluation circuitSimulation ResultID = 7.5A, VGS = 10V Measurement Simulation Error (%)RDS (on)  0.240 0.240 0.00
  7. 7. All Rights Reserved Copyright (c) Bee Technologies Inc. 20097VDD400I1TD = 0TF = 5nPW = 600uPER = 1000uI1 = 0I2 = 1mTR = 5n -+W1ION = 0uAIOFF = 1mAWI2150D2DbreakU1TK15A50DTime*1mA0 10n 20n 30n 40n 50n 60n 70n 80nV(W1:3)0V4V8V12V16V20VGate Charge CharacteristicCircuit Simulation resultEvaluation circuitSimulation ResultVDD=400V, ID=15A,VGS=10VMeasurement Simulation Error (%)Qgs nC 15.000 14.931 -0.46Qgd nC 15.000 15.069 0.46Qg nC 40.000 39.952 -0.12
  8. 8. All Rights Reserved Copyright (c) Bee Technologies Inc. 20098Capacitance CharacteristicSimulation ResultVDS (V)Cbd (pF)Error (%)Measurement Simulation20 278.000 279.000 0.3640 192.000 193.500 0.7860 156.250 155.000 -0.8080 132.500 133.000 0.38100 118.750 118.000 -0.63SimulationMeasurement
  9. 9. All Rights Reserved Copyright (c) Bee Technologies Inc. 200990VDD200VdcV2TD = 1uTF = 5nPW = 10uPER = 20uV1 = 0TR = 5nV2 = 20U1TK15A50DL250nHR250R150L130nHRL26Time0.6us 0.8us 1.0us 1.2us 1.4us 1.6us1 V(U1:G) 2 V(U1:D)0V2V4V6V8V10V12V10V80V160V240V2>>Switching Time CharacteristicCircuit Simulation resultEvaluation circuitSimulation ResultID=7.5A, VDD=200VVGS=0/10VMeasurement Simulation Error(%)ton ns 100.000 100.017 0.02
  10. 10. All Rights Reserved Copyright (c) Bee Technologies Inc. 200910V250V100V30VdcU1TK15A50DV_V20V 10V 20V 30V 40V 50VI(V3)0A10A20A30A40A50AOutput CharacteristicCircuit Simulation resultEvaluation circuitVGS=6V7.56.58.510879
  11. 11. All Rights Reserved Copyright (c) Bee Technologies Inc. 200911VSD0U1TK15A50DVsense0VdcV_VSD0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4VI(Vsense)100mA1.0A10A100AForward Current CharacteristicCircuit Simulation ResultEvaluation Circuit
  12. 12. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009120.11.010.0100.00 0.2 0.4 0.6 0.8 1 1.2 1.4DrainreversecurrentIDR(A)Source - Drain voltage VSD (V)MeasurementSimulationComparison GraphCircuit Simulation ResultSimulation ResultIDR(A)VSD (V)%ErrorMeasurement Simulation0.1 0.615 0.615 0.000.2 0.640 0.638 -0.310.5 0.675 0.674 -0.151.0 0.705 0.707 0.282.0 0.750 0.751 0.135.0 0.840 0.838 -0.2410.0 0.940 0.939 -0.1120.0 1.100 1.101 0.09
  13. 13. All Rights Reserved Copyright (c) Bee Technologies Inc. 200913V1TD = 1.8usTF = 10nsPW = 20usPER = 200usV1 = -9.45vTR = 10nsV2 = 10.65vR1500U1DTK15A50D_PTime8.0us 16.0us 24.0us 32.0us 40.0usI(R1)-400mA-300mA-200mA-100mA-0mA100mA200mA300mA400mAReverse Recovery CharacteristicsCircuit Simulation ResultEvaluation CircuitCompare Measurement vs. SimulationMeasurement Simulation Error (%)trj us 0.900 0.891 -1.00trb us 1.200 1.215 1.25trr us 2.100 2.106 0.29
  14. 14. All Rights Reserved Copyright (c) Bee Technologies Inc. 200914Reverse Recovery Characteristic ReferenceTrj= 0.9 (us)Trb= 1.2 (us)Conditions:Ifwd=lrev=0.2(A),Rl=50Relation between trj and trbExampleMeasurement

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