SPICE MODEL of TK12A60U (Standard+BDS Model) in SPICE PARK

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SPICE MODEL of TK12A60U (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of TK12A60U (Standard+BDS Model) in SPICE PARK

  1. 1. All Rights Reserved Copyright (c) Bee Technologies Inc. 20091Device Modeling ReportBee Technologies Inc.COMPONENTS: MOSFET (Model Parameters)PART NUMBER: TK12A60UMANUFACTURER: TOSHIBAREMARK: Body Diode (Model Parameters)
  2. 2. All Rights Reserved Copyright (c) Bee Technologies Inc. 20092MOSFET MODELPSpice modelparameterModel descriptionLEVELL Channel LengthW Channel WidthKP TransconductanceRS Source Ohmic ResistanceRD Ohmic Drain ResistanceVTO Zero-bias Threshold VoltageRDS Drain-Source Shunt ResistanceTOX Gate Oxide ThicknessCGSO Zero-bias Gate-Source CapacitanceCGDO Zero-bias Gate-Drain CapacitanceCBD Zero-bias Bulk-Drain Junction CapacitanceMJ Bulk Junction Grading CoefficientPB Bulk Junction PotentialFC Bulk Junction Forward-bias Capacitance CoefficientRG Gate Ohmic ResistanceIS Bulk Junction Saturation CurrentN Bulk Junction Emission CoefficientRB Bulk Series ResistancePHI Surface Inversion PotentialGAMMA Body-effect ParameterDELTA Width effect on Threshold VoltageETA Static Feedback on Threshold VoltageTHETA Mobility ModulationKAPPA Saturation Field FactorVMAX Maximum Drift Velocity of CarriersXJ Metallurgical Junction DepthUO Surface Mobility
  3. 3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009302468100 2 4 6 8 10gfs(S)Drain Current ID (A)MeasurementSimulationTransconductance CharacteristicCircuit Simulation ResultComparison tableId(A)gfs (s)Error (%)Measurement Simulation1.0 2.750 2.832 2.9822.0 3.900 3.958 1.4875.0 6.050 6.118 1.12410.0 8.400 8.439 0.464
  4. 4. All Rights Reserved Copyright (c) Bee Technologies Inc. 20094V10VdcV2200V30VdcU1TK12A60UV_V10V 2V 4V 6V 8V 10VI(V3)0A4A8A12A16A20AVgs-Id CharacteristicCircuit Simulation resultEvaluation circuit
  5. 5. All Rights Reserved Copyright (c) Bee Technologies Inc. 200950481216200 2 4 6 8 10DrainCurrentID(A)Gate - Source Voltage VGS (V)MeasurementSimulationComparison GraphCircuit Simulation ResultSimulation ResultID(A)VGS(V)Error (%)Measurement Simulation1 5.350 5.416 1.232 5.655 5.710 0.974 6.070 6.132 1.026 6.400 6.460 0.948 6.675 6.740 0.9710 6.915 6.989 1.0712 7.140 7.216 1.0616 7.550 7.624 0.9820 7.920 7.988 0.86
  6. 6. All Rights Reserved Copyright (c) Bee Technologies Inc. 200960V30VdcVDS0VdcV110U1TK12A60UV_VDS0V 1.0V 2.0VI(V3)0A1.0A2.0A3.0A4.0A5.0A6.0ARds(on) CharacteristicCircuit Simulation resultEvaluation circuitSimulation ResultID = 6A, VGS = 10V Measurement Simulation Error (%)RDS (on)  0.360 0.361 0.31
  7. 7. All Rights Reserved Copyright (c) Bee Technologies Inc. 20097I1TD = 0TF = 5nPW = 600uPER = 1000uI1 = 0I2 = 1mTR = 5nVDD400-+W1ION = 0uAIOFF = 1mAWI2120D2DbreakU1TK12A60UTime*1mA0 4n 8n 12n 16n 20nV(W1:3)0V4V8V12V16V20VGate Charge CharacteristicCircuit Simulation resultEvaluation circuitSimulation ResultVDD=400V, ID=12A,VGS=10VMeasurement Simulation Error (%)Qgs nC 4.900 4.904 0.08Qgd nC 5.500 5.495 -0.09Qg nC 14.000 12.506 -10.67
  8. 8. All Rights Reserved Copyright (c) Bee Technologies Inc. 20098Capacitance CharacteristicSimulation ResultVDS (V)Cbd (pF)Error (%)Measurement Simulation40 198.400 200.000 0.8160 71.400 70.000 -1.9680 36.400 36.000 -1.10100 21.400 21.000 -1.87SimulationMeasurement
  9. 9. All Rights Reserved Copyright (c) Bee Technologies Inc. 20099Time0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us 1.4us 1.5us1 V(U1:G) 2 V(U1:D)0V2V4V6V8V10V12V1>>0V200V360V20VDD303VdcV2TD = 1uTF = 5nPW = 10uPER = 20uV1 = 0TR = 5nV2 = 20U1TK12A60UL250nHR250R150L130nHRL50Switching Time CharacteristicCircuit Simulation resultEvaluation circuitSimulation ResultID=6A, VDD300VVGS=0/10VMeasurement Simulation Error (%)ton ns 60.000 60.028 0.05
  10. 10. All Rights Reserved Copyright (c) Bee Technologies Inc. 200910V250V100V30VdcU1TK12A60UV_V20V 1.0V 2.0V 3.0V 4.0V 5.0VI(V3)0A2A4A6A8A10AOutput CharacteristicCircuit Simulation resultEvaluation circuitVGS=5.5V7.5610 876.5
  11. 11. All Rights Reserved Copyright (c) Bee Technologies Inc. 200911U1TK12A60UVDS0Vsense0VdcV_VDS0V 0.3V 0.6V 0.9V 1.2VI(Vsense)100mA1.0A10A100AForward Current CharacteristicCircuit Simulation ResultEvaluation Circuit
  12. 12. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009120.11.010.0100.00 0.3 0.6 0.9 1.2DrainreversecurrentIDR(A)Source - Drain voltage VDS (V)MeasurementSimulationComparison GraphCircuit Simulation ResultSimulation ResultIDR(A)VDS(V)%ErrorMeasurement Simulation0.1 0.670 0.669 -0.150.2 0.690 0.689 -0.170.5 0.718 0.718 0.041.0 0.746 0.747 0.132.0 0.785 0.787 0.255.0 0.870 0.867 -0.3410.0 0.965 0.965 0.0420.0 1.130 1.130 0.03
  13. 13. All Rights Reserved Copyright (c) Bee Technologies Inc. 200913V1TD = 0.5usTF = 10nsPW = 20usPER = 50usV1 = -9.45vTR = 10nsV2 = 10.65v0R150U1TK12A60UTime12us 14us 16us 18us 20us 22us 24us 26us 28us 30usI(R1)-400mA-200mA0A200mA400mAReverse Recovery CharacteristicsCircuit Simulation ResultEvaluation CircuitCompare Measurement vs. SimulationMeasurement Simulation Error (%)trj ns 720.000 713.130 -0.95
  14. 14. All Rights Reserved Copyright (c) Bee Technologies Inc. 200914Reverse Recovery Characteristic ReferenceTrj= 720 (ns)Trb= 880 (ns)Conditions:Ifwd=lrev=0.2(A),Rl=50Relation between trj and trbExampleMeasurement

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