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SPICE MODEL of TK10A50D (Standard+BDS Model) in SPICE PARK
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SPICE MODEL of TK10A50D (Standard+BDS Model) in SPICE PARK

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SPICE MODEL of TK10A50D (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

SPICE MODEL of TK10A50D (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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  • 1. All Rights Reserved Copyright (c) Bee Technologies Inc. 20091Device Modeling ReportBee Technologies Inc.COMPONENTS: MOSFET (Model Parameters)PART NUMBER: TK10A50DMANUFACTURER: TOSHIBAREMARK: Body Diode (Model Parameters)
  • 2. All Rights Reserved Copyright (c) Bee Technologies Inc. 20092MOSFET MODELPSpice modelparameterModel descriptionLEVELL Channel LengthW Channel WidthKP TransconductanceRS Source Ohmic ResistanceRD Ohmic Drain ResistanceVTO Zero-bias Threshold VoltageRDS Drain-Source Shunt ResistanceTOX Gate Oxide ThicknessCGSO Zero-bias Gate-Source CapacitanceCGDO Zero-bias Gate-Drain CapacitanceCBD Zero-bias Bulk-Drain Junction CapacitanceMJ Bulk Junction Grading CoefficientPB Bulk Junction PotentialFC Bulk Junction Forward-bias Capacitance CoefficientRG Gate Ohmic ResistanceIS Bulk Junction Saturation CurrentN Bulk Junction Emission CoefficientRB Bulk Series ResistancePHI Surface Inversion PotentialGAMMA Body-effect ParameterDELTA Width effect on Threshold VoltageETA Static Feedback on Threshold VoltageTHETA Mobility ModulationKAPPA Saturation Field FactorVMAX Maximum Drift Velocity of CarriersXJ Metallurgical Junction DepthUO Surface Mobility
  • 3. All Rights Reserved Copyright (c) Bee Technologies Inc. 20093123456789100.0 2.0 4.0 6.0 8.0 10.0gfs(S)Drain Current ID (A)MeasurementSimulationTransconductance CharacteristicCircuit Simulation ResultComparison tableId(A)gfs (S)Error (%)Measurement Simulation1 2.600 2.646 1.782 3.800 3.702 -2.585 5.800 5.730 -1.2110 7.800 7.916 1.48
  • 4. All Rights Reserved Copyright (c) Bee Technologies Inc. 20094V_V10V 2V 4V 6V 8V 10VI(V3)0A2A4A6A8A10A12AVgs-Id CharacteristicCircuit Simulation resultEvaluation circuitV10VdcV2100V30VdcU1TK10A50D
  • 5. All Rights Reserved Copyright (c) Bee Technologies Inc. 200950.004.008.0012.000.0 2.0 4.0 6.0 8.0 10.0DrainCurrentID(A)Gate - Source Voltage VGS (V)MeasurementSimulationComparison GraphCircuit Simulation ResultSimulation ResultID(A)VGS(V)Error (%)Measurement Simulation1 5.7500 5.7497 -0.012 6.0500 6.0645 0.245 6.7000 6.6992 -0.0110 7.4000 7.4306 0.41
  • 6. All Rights Reserved Copyright (c) Bee Technologies Inc. 200960V30VdcVDS0VdcV110U1TK10A50DV_VDS0V 0.8V 1.6V 2.4V 3.2VI(V3)0A1.0A2.0A3.0A4.0A5.0ARds(on) CharacteristicCircuit Simulation resultEvaluation circuitSimulation ResultID = 5A, VGS = 10V Measurement Simulation Error (%)RDS (on)  0.6200 0.6200 0.000
  • 7. All Rights Reserved Copyright (c) Bee Technologies Inc. 20097Time*1mA0 6n 12n 18n 24n 30nV(W1:3)0V4V8V12V16V20VGate Charge CharacteristicCircuit Simulation resultEvaluation circuitSimulation ResultVDD=400V, ID=10A,VGS=10VMeasurement Simulation Error (%)Qgs nC 7.000 7.005 0.07Qgd nC 7.000 6.954 -0.66Qg nC 20.000 16.830 -15.85VDD400I1TD = 0TF = 5nPW = 600uPER = 1000uI1 = 0I2 = 1mTR = 5n -+W1ION = 0uAIOFF = 1mAWI210U1TK10A50D0D2Dbreak
  • 8. All Rights Reserved Copyright (c) Bee Technologies Inc. 20098Capacitance CharacteristicSimulation ResultVDS (V)Cbd (pF)Error (%)Measurement Simulation12 157.000 156.800 -0.1320 114.200 114.330 0.1150 64.000 64.358 0.56100 42.000 41.541 -1.09SimulationMeasurement
  • 9. All Rights Reserved Copyright (c) Bee Technologies Inc. 20099Time0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us 1.4usV(U1:G) V(U1:D)/20.30V2V4V6V8V10V12V14VSwitching Time CharacteristicCircuit Simulation resultEvaluation circuitSimulation ResultID=5A, VDD=200VVGS=0/10VMeasurement Simulation Error (%)ton ns 60.000 60.078 0.130VDD203VdcV2TD = 1uTF = 5nPW = 10uPER = 20uV1 = 0TR = 5nV2 = 20U1TK10A50DL250nHR250R150L130nHRL40
  • 10. All Rights Reserved Copyright (c) Bee Technologies Inc. 200910V_V20V 2V 4V 6V 8V 10VI(V3)0A2A4A6A8A10AOutput CharacteristicCircuit Simulation resultEvaluation circuitVGS=6V7V6.5V8V10VV250V100V30VdcU1TK10A50D7.5V
  • 11. All Rights Reserved Copyright (c) Bee Technologies Inc. 200911V_VSD0V 0.3V 0.6V 0.9V 1.2V 1.5VI(Vsense)100mA1.0A10A100AForward Current CharacteristicCircuit Simulation ResultEvaluation CircuitVSD0Vsense0VdcU1TK10A50D
  • 12. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009120.11.010.0100.00 0.3 0.6 0.9 1.2 1.5DrainreversecurrentIDR(A)Source - Drain voltage VSD (V)MeasurementSimulationComparison GraphCircuit Simulation ResultSimulation ResultIDR(A)VSD(V)Error (%)Measurement Simulation0.1 0.610 0.608 -0.330.2 0.640 0.641 0.230.5 0.690 0.689 -0.191 0.730 0.729 -0.132 0.775 0.778 0.355 0.865 0.867 0.2410 0.965 0.967 0.1920 1.115 1.114 -0.1330 1.245 1.236 -0.7640 1.340 1.347 0.52
  • 13. All Rights Reserved Copyright (c) Bee Technologies Inc. 200913Time12us 14us 16us 18us 20us 22us 24us 26us 28us 30usI(R1)-400mA-300mA-200mA-100mA-0mA100mA200mA300mA400mAReverse Recovery CharacteristicsCircuit Simulation ResultEvaluation CircuitCompare Measurement vs. SimulationMeasurement Simulation Error (%)trj us 0.440 0.441 0.15V1TD = 0usTF = 10nsPW = 20usPER = 50usV1 = -9.40vTR = 10nsV2 = 10.60vR1500U1TK10A50D
  • 14. All Rights Reserved Copyright (c) Bee Technologies Inc. 200914Reverse Recovery Characteristic ReferenceTrj=0.44(us)Trb=1.24(us)Conditions:Ifwd=lrev=0.2(A),Rl=50Relation between trj and trbExampleMeasurement