SPICE MODEL of TK10A50D (Professional+BDP Model) in SPICE PARK

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SPICE MODEL of TK10A50D (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of TK10A50D (Professional+BDP Model) in SPICE PARK

  1. 1. All Rights Reserved Copyright (c) Bee Technologies Inc. 20091Device Modeling ReportBee Technologies Inc.COMPONENTS: MOSFET (Professional Model)PART NUMBER: TK10A50DMANUFACTURER: TOSHIBAREMARK: Body Diode (Professional Model)
  2. 2. All Rights Reserved Copyright (c) Bee Technologies Inc. 20092MOSFET MODELPSpice modelparameterModel descriptionLEVELL Channel LengthW Channel WidthKP TransconductanceRS Source Ohmic ResistanceRD Ohmic Drain ResistanceVTO Zero-bias Threshold VoltageRDS Drain-Source Shunt ResistanceTOX Gate Oxide ThicknessCGSO Zero-bias Gate-Source CapacitanceCGDO Zero-bias Gate-Drain CapacitanceCBD Zero-bias Bulk-Drain Junction CapacitanceMJ Bulk Junction Grading CoefficientPB Bulk Junction PotentialFC Bulk Junction Forward-bias Capacitance CoefficientRG Gate Ohmic ResistanceIS Bulk Junction Saturation CurrentN Bulk Junction Emission CoefficientRB Bulk Series ResistancePHI Surface Inversion PotentialGAMMA Body-effect ParameterDELTA Width effect on Threshold VoltageETA Static Feedback on Threshold VoltageTHETA Mobility ModulationKAPPA Saturation Field FactorVMAX Maximum Drift Velocity of CarriersXJ Metallurgical Junction DepthUO Surface Mobility
  3. 3. All Rights Reserved Copyright (c) Bee Technologies Inc. 20093123456789100.0 2.0 4.0 6.0 8.0 10.0gfs(S)Drain Current ID (A)MeasurementSimulationTransconductance CharacteristicCircuit Simulation ResultComparison tableId(A)gfs (S)Error (%)Measurement Simulation1 2.600 2.646 1.782 3.800 3.702 -2.585 5.800 5.730 -1.2110 7.800 7.916 1.48
  4. 4. All Rights Reserved Copyright (c) Bee Technologies Inc. 20094V10VdcV2100V30VdcU1TK10A50DV_V10V 2V 4V 6V 8V 10VI(V3)0A2A4A6A8A10A12AVgs-Id CharacteristicCircuit Simulation resultEvaluation circuit
  5. 5. All Rights Reserved Copyright (c) Bee Technologies Inc. 200950.004.008.0012.000.0 2.0 4.0 6.0 8.0 10.0DrainCurrentID(A)Gate - Source Voltage VGS (V)MeasurementSimulationComparison GraphCircuit Simulation ResultSimulation ResultID(A)VGS(V)Error (%)Measurement Simulation1 5.7500 5.7497 -0.012 6.0500 6.0645 0.245 6.7000 6.6992 -0.0110 7.4000 7.4306 0.4112 7.7000 7.6727 -0.35
  6. 6. All Rights Reserved Copyright (c) Bee Technologies Inc. 200960V30VdcVDS0VdcV110U1TK10A50DV_VDS0V 0.8V 1.6V 2.4V 3.2VI(V3)0A1.0A2.0A3.0A4.0A5.0ARds(on) CharacteristicCircuit Simulation resultEvaluation circuitSimulation ResultID = 5A, VGS = 10V Measurement Simulation Error (%)R DS (on)  0.6200 0.6200 0.00
  7. 7. All Rights Reserved Copyright (c) Bee Technologies Inc. 20097VDD400I1TD = 0TF = 5nPW = 600uPER = 1000uI1 = 0I2 = 1mTR = 5n -+W1ION = 0uAIOFF = 1mAWI2100U1TK10A50DD2DbreakTime*1mA0 6n 12n 18n 24n 30nV(W1:3)0V4V8V12V16V20VGate Charge CharacteristicCircuit Simulation resultEvaluation circuitSimulation ResultVDD=400V, ID=10A,VGS=10VMeasurement Simulation Error (%)Qgs nC 7.000 7.023 0.33Qgd nC 7.000 7.014 0.20Qg nC 20.000 20.004 0.02
  8. 8. All Rights Reserved Copyright (c) Bee Technologies Inc. 20098Capacitance CharacteristicSimulation ResultVDS (V)Cbd (pF)Error (%)Measurement Simulation12 157.000 156.800 -0.1320 114.200 114.330 0.1150 64.000 64.358 0.56100 42.000 41.541 -1.09SimulationMeasurement
  9. 9. All Rights Reserved Copyright (c) Bee Technologies Inc. 20099Time0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us 1.4us 1.5usV(U1:G) V(U1:D)/20.30V2V4V6V8V10V12VSwitching Time CharacteristicCircuit Simulation resultEvaluation circuitSimulation ResultID=5A, VDD=200VVGS=0/10VMeasurement Simulation Error(%)ton ns 60.000 59.281 -1.200VDD203VdcV2TD = 1uTF = 5nPW = 10uPER = 20uV1 = 0TR = 5nV2 = 20U1TK10A50DL250nHR250R150L130nHRL40
  10. 10. All Rights Reserved Copyright (c) Bee Technologies Inc. 200910V_V20V 2V 4V 6V 8V 10VI(V3)0A2A4A6A8A10AOutput CharacteristicCircuit Simulation resultEvaluation circuitV250V100V30VdcU1TK10A50DVGS=6V7V6.5V8V10V 7.5V
  11. 11. All Rights Reserved Copyright (c) Bee Technologies Inc. 200911VSD0Vsense0VdcU1TK10A50DV_VSD0V 0.3V 0.6V 0.9V 1.2V 1.5VI(Vsense)100mA1.0A10A100AForward Current CharacteristicCircuit Simulation ResultEvaluation Circuit
  12. 12. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009120.11.010.0100.00 0.3 0.6 0.9 1.2 1.5DrainreversecurrentIDR(A)Source - Drain voltage VSD (V)MeasurementSimulationComparison GraphCircuit Simulation ResultSimulation ResultIDR(A)VSD(V)%ErrorMeasurement Simulation0.1 0.610 0.608 -0.320.2 0.640 0.642 0.240.5 0.690 0.689 -0.191 0.730 0.729 -0.132 0.775 0.778 0.365 0.865 0.867 0.2610 0.965 0.967 0.2120 1.115 1.114 -0.1130 1.245 1.236 -0.7340 1.340 1.347 0.55
  13. 13. All Rights Reserved Copyright (c) Bee Technologies Inc. 200913V1TD = 0usTF = 10nsPW = 20usPER = 50usV1 = -9.40vTR = 10nsV2 = 10.60vR1500U1DTK10A50D_PTime12us 14us 16us 18us 20us 22us 24us 26us 28us 30usI(R1)-400mA-300mA-200mA-100mA-0mA100mA200mA300mA400mAReverse Recovery CharacteristicsCircuit Simulation ResultEvaluation CircuitCompare Measurement vs. SimulationMeasurement Simulation Error (%)trj us 0.4400 0.4407 0.15trb us 1.2400 1.2404 0.03trr us 1.6800 1.6811 0.06
  14. 14. All Rights Reserved Copyright (c) Bee Technologies Inc. 200914Reverse Recovery Characteristic ReferenceTrj=0.44(us)Trb=1.24(us)Conditions:Ifwd=lrev=0.2(A),Rl=50Relation between trj and trbExampleMeasurement

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