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SPICE MODEL of SSM6P54TU (Standard+BDS Model) in SPICE PARK
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SPICE MODEL of SSM6P54TU (Standard+BDS Model) in SPICE PARK

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SPICE MODEL of SSM6P54TU (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

SPICE MODEL of SSM6P54TU (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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  • 1. Device Modeling ReportCOMPONENTS: Power MOSFET (Model Parameter)PART NUMBER: SSM6P54TUMANUFACTURER: TOSHIBAREMARK: P Channel ModelBody Diode (Parameter) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 2. MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 3. Transconductance CharacteristicCircuit Simulation Result 3 2.5 2 gfs 1.5 1 0.5 Measurement Simulation 0 0 100 200 300 400 500 - ID - Drain Current - mAComparison table gfs -Id(mA) Error(%) Measurement Simulation 5 0.240 0.250 4.167 10 0.317 0.333 5.047 20 0.483 0.500 3.520 50 0.800 0.833 4.125 100 1.250 1.250 0.000 200 2.000 2.000 0.000 500 2.778 2.778 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 4. Vgs-Id CharacteristicCircuit Simulation result -10A -1.0mA 0V -0.2V -0.6V -1.0V -1.4V -1.8V I(V3) V_V1Evaluation circuit V3 0Vdc SSM6P54TU V2 U1 -3 V1 -3 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 5. Comparison GraphCircuit Simulation Result 10000 Measurement BeeTech 1000 - ID - Drain Current - mA 100 10 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 - VGS - Gate to Source Voltage - VSimulation Result -VGS(V) -ID(mA) Error (%) Measurement Simulation 5 0.690 0.724 4.928 10 0.720 0.740 2.778 20 0.765 0.763 -0.261 50 0.824 0.807 -2.063 100 0.875 0.857 -2.057 200 0.945 0.928 -1.799 500 1.080 1.070 -0.926 1000 1.245 1.236 -0.723 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 6. Rds(on) CharacteristicCircuit Simulation result -1.0A -0.8A -0.6A -0.4A -0.2A 0A 0V -20mV -40mV -60mV -80mV -100mV -120mV -140mV I(V2) V_V3Evaluation circuit V2 0Vdc U1 SSM6P54TU V3 0Vdc V1 -10 0Simulation Result ID=-0.6A, VGS=-2.5V Measurement Simulation Error (%) R DS (on) 162.000 m 161.938 m -0.038 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 7. Gate Charge CharacteristicCircuit Simulation result -10V -8V -6V -4V -2V 0V 0 5n 10n 15n 20n V(W1:4) Time*1mAEvaluation circuit U1 SSM6P54TU V3 W - 0 + I2 D1 W1 Dbreak -1.2 IOFF = 1mA I1 TD = 0 ION = 0 TF = 1n ROFF = 1e6 PW = 600u RON = 1.0 V1 PER = 1500u I1 = 0 I2 = 1m -16 TR = 1n 0Simulation Result VDD=-16V,ID=-1.2A Measurement Simulation Error (%) ,VGS=-4V Qgs 1.750 nC 1.756 nC 0.343 Qgd 3.000 nC 2.991 nC -0.300 Qg 8.300 nC 9.878 nC 19.012 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 8. Capacitance Characteristic Measurement SimulationSimulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.1 27.300 27.350 0.183 0.2 25.800 25.800 0.000 0.5 22.000 21.900 -0.455 1 16.500 16.650 0.909 2 10.000 10.100 1.000 5 3.000 2.900 -3.333 10 0.900 0.880 -2.222 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 9. Switching Time CharacteristicCircuit Simulation result -3.0V -2.5V -2.0V -1.5V -1.0V -0.5V 0V 1.90us 1.95us 2.00us 2.05us 2.10us 2.15us 2.20us 2.25us V(L2:2) V(L1:1)/4 TimeEvaluation circuit L1 R3 30nH 16.67 U1 SSM6P54TU R1 L2 V1 = 0 30nH -10 V1 V2 = -5 V2 4.7 TD = 2u TR = 10n TF = 10n R2 PW = 10u PER = 50u 4.7 0Simulation Result ID=-0.6A, VDD=-10V Measurement Simulation Error(%) VGS=-2.5V ton 19.000 ns 19.026 ns 0.137 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 10. Output CharacteristicCircuit Simulation result -2.5A -4.0V -2.5V -1.8V -2.0A -1.5V -1.5A -1.0A VGS= -1.2V -0.5A 0A 0V -0.5V -1.0V -1.5V -2.0V I(V3) V_V2Evaluation circuit V3 0Vdc U1 V2 SSM6P54TU 0 V1 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 11. BODY DIODE SPICE MODELForward Current CharacteristicCircuit Simulation Result -2.0A -1.5A -1.0A -0.5A 0A 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V -I(R1) V_V1Evaluation Circuit R1 0.01m V1 0Vdc U1 SSM6P54TU 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 12. Comparison GraphCircuit Simulation Result 2 Measurement Simulation 1.5 - Drain reverse current IDR(A) 1 0.5 0 0 0.2 0.4 0.6 0.8 1 1.2 Drain Source voltage VDS(V)Simulation Result VDS(V) VDS(V) -IDR(A) %Error Measurement Simulation 0.100 0.535 0.538 0.561 0.200 0.600 0.596 -0.667 0.500 0.700 0.701 0.143 1.000 0.815 0.810 -0.613 1.500 0.890 0.885 -0.562 2.000 0.955 0.948 -0.733 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 13. Reverse Recovery CharacteristicCircuit Simulation Result 400mA 200mA 0A -200mA -400mA 19.94us 19.98us 20.02us 20.06us 20.10us 20.14us I(RL) TimeEvaluation Circuit RL 50 V1 = -9.5 V1 U1 V2 = 10.55 SSM6P54TU TD = 15n TR = 10n TF = 10n PW = 20u PER = 50u 0Compare Measurement vs. Simulation Measurement Simulation Error (%) trj 8.000 ns 8.030 ns 0.375 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 14. Reverse Recovery Characteristic ReferenceTrj=8.0(ns)Trb=5.6(ns)Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 15. ESD PROTECTION DIODE SPICE MODELZener Voltage CharacteristicCircuit Simulation Result 10mA 5mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1Evaluation Circuit U1 SSM6P54TU R1 R2 1G 0.01m V1 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
  • 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2008