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SPICE MODEL of SSM6J409TU (Professional+BDP Model) in SPICE PARK
SPICE MODEL of SSM6J409TU (Professional+BDP Model) in SPICE PARK
SPICE MODEL of SSM6J409TU (Professional+BDP Model) in SPICE PARK
SPICE MODEL of SSM6J409TU (Professional+BDP Model) in SPICE PARK
SPICE MODEL of SSM6J409TU (Professional+BDP Model) in SPICE PARK
SPICE MODEL of SSM6J409TU (Professional+BDP Model) in SPICE PARK
SPICE MODEL of SSM6J409TU (Professional+BDP Model) in SPICE PARK
SPICE MODEL of SSM6J409TU (Professional+BDP Model) in SPICE PARK
SPICE MODEL of SSM6J409TU (Professional+BDP Model) in SPICE PARK
SPICE MODEL of SSM6J409TU (Professional+BDP Model) in SPICE PARK
SPICE MODEL of SSM6J409TU (Professional+BDP Model) in SPICE PARK
SPICE MODEL of SSM6J409TU (Professional+BDP Model) in SPICE PARK
SPICE MODEL of SSM6J409TU (Professional+BDP Model) in SPICE PARK
SPICE MODEL of SSM6J409TU (Professional+BDP Model) in SPICE PARK
SPICE MODEL of SSM6J409TU (Professional+BDP Model) in SPICE PARK
SPICE MODEL of SSM6J409TU (Professional+BDP Model) in SPICE PARK
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SPICE MODEL of SSM6J409TU (Professional+BDP Model) in SPICE PARK

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SPICE MODEL of SSM6J409TU (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

SPICE MODEL of SSM6J409TU (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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  • 1. All Rights Reserved Copyright (c) Bee Technologies Inc. 20091Device Modeling ReportBee Technologies Inc.COMPONENTS: MOSFET (Professional Model)PART NUMBER: SSM6J409TUMANUFACTURER: TOSHIBAREMARK: Body Diode (Professional Model) /ESD Protection Diode
  • 2. All Rights Reserved Copyright (c) Bee Technologies Inc. 20092MOSFET MODELPSpice modelparameterModel descriptionLEVELL Channel LengthW Channel WidthKP TransconductanceRS Source Ohmic ResistanceRD Ohmic Drain ResistanceVTO Zero-bias Threshold VoltageRDS Drain-Source Shunt ResistanceTOX Gate Oxide ThicknessCGSO Zero-bias Gate-Source CapacitanceCGDO Zero-bias Gate-Drain CapacitanceCBD Zero-bias Bulk-Drain Junction CapacitanceMJ Bulk Junction Grading CoefficientPB Bulk Junction PotentialFC Bulk Junction Forward-bias Capacitance CoefficientRG Gate Ohmic ResistanceIS Bulk Junction Saturation CurrentN Bulk Junction Emission CoefficientRB Bulk Series ResistancePHI Surface Inversion PotentialGAMMA Body-effect ParameterDELTA Width effect on Threshold VoltageETA Static Feedback on Threshold VoltageTHETA Mobility ModulationKAPPA Saturation Field FactorVMAX Maximum Drift Velocity of CarriersXJ Metallurgical Junction DepthUO Surface Mobility
  • 3. All Rights Reserved Copyright (c) Bee Technologies Inc. 20093010203040500.0 5.0 10.0 15.0 20.0gfs(S)Drain Current ID (-A)MeasurementSimulationTransconductance CharacteristicCircuit Simulation ResultComparison table- Id(A)gfs(S)Error (%)Measurement Simulation0.2 6.400 6.118 -4.410.5 9.700 9.321 -3.911 13.000 12.663 -2.592 16.800 16.963 0.975 24.000 24.281 1.1710 30.500 31.025 1.7220 37.500 38.614 2.97
  • 4. All Rights Reserved Copyright (c) Bee Technologies Inc. 20094V_VGS0V -0.5V -1.0V -1.5V -2.0VI(VD_Sense)0A-2A-4A-6A-8A-10A-12A-14A-16A-18A-20AVgs-Id CharacteristicCircuit Simulation resultEvaluation circuitVDS-3VdcVD_Sense0VdcVGS0U1SSM6J409TU
  • 5. All Rights Reserved Copyright (c) Bee Technologies Inc. 200950.002.004.006.008.0010.0012.0014.0016.0018.0020.000.0 0.5 1.0 1.5 2.0DrainCurrentID(-A)Gate - Source Voltage VGS (-V)MeasurementSimulationComparison GraphCircuit Simulation ResultSimulation Result-ID(A)-VGS(V)Error (%)Measurement Simulation0.2 0.840 0.880 4.800.5 0.890 0.919 3.261 0.950 0.964 1.512 1.040 1.032 -0.815 1.200 1.176 -2.0210 1.370 1.356 -1.0620 1.650 1.641 -0.56
  • 6. All Rights Reserved Copyright (c) Bee Technologies Inc. 20096U1SSM6J409TUVGS-4.5VdcVD_Sense0VdcVDS-0Vdc0V_VDS0V -20mV -40mV -60mVI(VD_Sense)0A-1.0A-2.0A-3.0ARds(on) CharacteristicCircuit Simulation resultEvaluation circuitSimulation ResultID = -3A, VGS = -4.5V Measurement Simulation Error (%)RDS (on) m 17.800 17.800 0.00
  • 7. All Rights Reserved Copyright (c) Bee Technologies Inc. 20097Time*-1mA0 -5n -10n -15n -20n -25n -30nV(W1:4)0V-1.0V-2.0V-3.0V-4.0V-5.0V-6.0V-7.0V-8.0VGate Charge CharacteristicCircuit Simulation resultEvaluation circuitSimulation ResultVDD=-10V, ID=-9.5A,VGS=-4.5VMeasurement Simulation Error (%)Qgs nC 2.000 2.016 0.80Qgd nC 4.250 4.259 0.22Qg nC 15.000 14.988 -0.08I1TD = 0TF = 10nPW = 600uPER = 1000uI1 = 0I2 = 1mTR = 10n-+W1ION = 0uAIOFF = 0.1mAW0I29.5AdcD1DbreakV1-10VdsV20VdcU1SSM6J409TU
  • 8. All Rights Reserved Copyright (c) Bee Technologies Inc. 20098Capacitance CharacteristicSimulation ResultVSD (V)Cbd (pF)Error (%)Measurement Simulation0.1 340.000 347.750 2.280.2 305.000 319.950 4.900.5 255.000 263.200 3.221 210.000 210.500 0.242 160.000 158.400 -1.005 100.000 101.760 1.7610 70.000 70.690 0.9920 50.000 48.450 -3.10SimulationMeasurement
  • 9. All Rights Reserved Copyright (c) Bee Technologies Inc. 20099Time1.84us 1.92us 2.00us 2.08us 2.16us 2.24usV(L1:2) V(L2:2)/40V-0.5V-1.0V-1.5V-2.0V-2.5V-3.0V-3.5V-4.0VSwitching Time CharacteristicCircuit Simulation resultEvaluation circuitSimulation ResultID=-2.0A, VDD=-10VVGS=0/-2.5VMeasurement Simulation Error(%)ton ns 40.000 39.998 -0.01V2TD = 2uTF = 1nPW = 10uPER = 2000uV1 = 0TR = 1nV2 = 5V1-10VdcL250nHL130nHR25R14.7U1SSM6J409TU0RG4.7
  • 10. All Rights Reserved Copyright (c) Bee Technologies Inc. 200910V_VDS0V -0.2V -0.4V -0.6V -0.8V -1.0VI(VD_Sense)0A-4A-8A-12A-16A-20AOutput CharacteristicCircuit Simulation resultEvaluation circuitU1SSM6J409TUVGSVD_Sense0VdcVDS-1Vdc0VGS=-4.5V-1.5-1.8-2.5
  • 11. All Rights Reserved Copyright (c) Bee Technologies Inc. 200911V_V10V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2VI(R1)1.0mA10mA100mA1.0A10A100AForward Current CharacteristicCircuit Simulation ResultEvaluation CircuitV10VdcR10.01m0U1SSM6J409TU
  • 12. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009120.00.00.11.010.00 0.2 0.4 0.6 0.8 1 1.2DrainreversecurrentIDR(A)Source - Drain voltage VDS (V)MeasurementSimulationComparison GraphCircuit Simulation ResultSimulation ResultIDR(A)VDS(V)%ErrorMeasurement Simulation0.001 0.345 0.345 0.000.01 0.420 0.421 0.270.1 0.500 0.501 0.290.2 0.525 0.529 0.840.5 0.570 0.574 0.651 0.615 0.615 0.032 0.660 0.663 0.505 0.740 0.738 -0.3010 0.815 0.808 -0.8320 0.900 0.904 0.42
  • 13. All Rights Reserved Copyright (c) Bee Technologies Inc. 200913Time0.2us 0.6us 1.0us 1.4us 1.8us 2.2usI(R1)-400mA-300mA-200mA-100mA-0mA100mA200mA300mA400mA0V1TD = 18nTF = 5.7nsPW = 1usPER = 50usV1 = -9.5VTR = 10nsV2 = 10.5VR150 U1DSSM64J409TU_PReverse Recovery CharacteristicsCircuit Simulation ResultEvaluation CircuitCompare Measurement vs. SimulationCharacteristics Unit Measurement Simulation Error (%)trj ns 24.000 23.544 -1.90trb ns 132.000 131.746 -0.19trr ns 156.000 155.290 -0.46
  • 14. All Rights Reserved Copyright (c) Bee Technologies Inc. 200914Reverse Recovery Characteristic ReferenceTrj=24.00(ns)Trb=132.00(ns)Conditions:Ifwd=lrev=0.2(A),Rl=50Relation between trj and trbExampleMeasurement
  • 15. All Rights Reserved Copyright (c) Bee Technologies Inc. 200915V_V10V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50VI(R1)0A1mA2mA3mA4mA5mA6mA7mA8mA9mA10mAESD PROTECTION DIODE SPICE MODELZener Voltage CharacteristicCircuit Simulation ResultEvaluation CircuitopenRopen100MEG0openopenopenopenR10.01mV10Vdc0U1SSM6J409TU
  • 16. All Rights Reserved Copyright (c) Bee Technologies Inc. 200916Zener Voltage Characteristic Reference

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