SPICE MODEL of SSM5H08TU (Professional+BDS+SBDP Model) in SPICE PARK
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SPICE MODEL of SSM5H08TU (Professional+BDS+SBDP Model) in SPICE PARK

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SPICE MODEL of SSM5H08TU (Professional+BDS+SBDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

SPICE MODEL of SSM5H08TU (Professional+BDS+SBDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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    SPICE MODEL of SSM5H08TU (Professional+BDS+SBDP Model) in SPICE PARK SPICE MODEL of SSM5H08TU (Professional+BDS+SBDP Model) in SPICE PARK Document Transcript

    • Device Modeling ReportCOMPONENTS: Power MOSFET (Professional)PART NUMBER: SSM5H08TUMANUFACTURER: TOSHIBABody Diode (Standard) / ESD Protection DiodeSchottky Barrier Diode (Professional) Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • MOSFET MODELPspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Transconductance CharacteristicCircuit Simulation ResultComparison table gfs ID(A) Error (%) Measurement Simulation 0.50 2.40 2.39 -0.46 1.00 3.37 3.34 -0.92 2.00 4.70 4.64 -1.19 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Vgs-Id CharacteristicCircuit Simulation result 10A 1.0A 100mA 10mA 1.0mA 100uA 10uA 0V 1.0V 2.0V 3.0V 4.0V I(V2) V_V1Evaluation circuit OP EN OP EN R1 10 0M EG V2 0V dc 0 OP EN V1 V3 10 Vd c 3V dc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Comparison GraphCircuit Simulation ResultSimulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.01 1.13 1.14 0.80 0.02 1.16 1.17 0.69 0.05 1.20 1.21 0.83 0.10 1.26 1.27 0.79 0.20 1.35 1.35 0.00 0.50 1.49 1.50 0.67 1.00 1.67 1.68 0.60 2.00 1.92 1.94 1.04 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Id-Rds(on) CharacteristicCircuit Simulation result ( VDS(V), Id(A) )Evaluation circuit U1 OPEN OPEN OPEN V1 R1 100MEG 0Vdc SSM5H08TU 0 VG VD 2.5Vdc 10Vdc 0Simulation Result ID=0.756A, VGS=2.5V Measurement Simulation Error (%) R DS (on) 164.88 m 164.88 m 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Id-Rds(on) Characteristic Reference ID = VDS = VGS = All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Gate Charge CharacteristicCircuit Simulation resultEvaluation circuit Open Dbreak Open PER = 1000u U4 D1 PW = 600u SSM5H08TU I2 RS TF = 10n W1 1.5Adc TR = 10n 100MEG + TD = 0 - open I2 = 1m I1 W I1 = 0 IOFF = 1mA V1 0 ION = 0uA 10Vdc 0Simulation Result VDD=10V,ID=1.5A Measurement Simulation Error (%) Qgs 0.250 nC 0.252 nC 0.800 Qgd 0.565 nC 0.568 nC 0.531 Qg 3.100 nC 3.100 nC 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Capacitance Characteristic Measurement SimulationSimulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.10 109.00 109.80 0.73 0.20 104.00 104.70 0.67 0.50 94.00 93.62 -0.40 1.00 80.00 80.23 0.29 2.00 63.00 64.13 1.79 5.00 43.00 43.04 0.09 10.00 30.00 30.11 0.37 20.00 20.00 20.25 1.25 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Switching Time CharacteristicCircuit Simulation result 12V VDD = 10V Vg = 0/2.5V 8V 4V 0V 4.97us 4.99us 5.01us 5.03us 5.05us 5.07us V(2)*4 V(3) TimeEvaluation circuit L1 RL 3 V3 0.03uH 13.35 0Vdc VDD U10 10 OPEN OPEN R1 L2 2 V1 = 0 4.7 0 V1 SSM5H08TU V2 = 5 R2 TD = 5u TR = 6n 4.7 TF = 7n PW = 5u PER = 100u 0 0 0Simulation Result ID=0.75A, VDD=10V Measurement Simulation Error(%) VGS=2.5V ton 15.50 ns 15.57 ns 0.45 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Output CharacteristicCircuit Simulation result 2.4V 2.2V 2.0V VGS=1.8VEvaluation circuit OPEN OPEN R1 100MEG V2 0Vdc 0 OPEN V1 V3 2.5Vdc 3Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Output Characteristic Reference 2.4V 2.2V 2V VGS=1.8V All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Body Diode ModelPspice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Forward Current CharacteristicCircuit Simulation ResultEvaluation Circuit R1 0.01m Open Open SSM5H08TU VD U5 0Vdc RS 100MEG open 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Comparison GraphCircuit Simulation ResultSimulation Result Vfwd(V) Vfwd(V) Ifwd(A) Measurement Simulation %Error 0.010 0.587 0.591 0.681 0.020 0.605 0.604 -0.165 0.050 0.625 0.623 -0.320 0.100 0.637 0.639 0.314 0.200 0.660 0.659 -0.152 0.500 0.690 0.689 -0.145 1.000 0.710 0.713 0.423 2.000 0.739 0.737 -0.271 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Forward Current Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Reverse Recovery CharacteristicCircuit Simulation ResultEvaluation circuit R1 50 Open Open SSM5H08TU V1 = -9.4v V1 U5 V2 = 10.6v RS TD = 0 TR = 10ns 100MEG TF = 10ns PW = 1us PER = 100us open 0 0Compare Measurement vs. Simulation Trr Measurement Simulation Error(%) Trj+Trb 11.6 ns 11.594 ns -0.05172 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Reverse Recovery Characteristic Reference Measurementtrj=6.4(ns)trb=5.2(ns)Conditions:Ifwd=Irev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Zener Voltage CharacteristicCircuit Simulation ResultEvaluation Circuit U1 OPEN OPEN OPEN R2 OPEN R1 0.01m 100MEG SSM5H08TU V1 0Vdc 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Forward Current CharacteristicCircuit Simulation ResultEvaluation Circuit R1 0.01m open open open V1 0Vdc RS SSM5H08TU 100MEG U1 open 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Comparison GraphCircuit Simulation ResultSimulation Result Vfwd (V) Ifwd (A) Measurement Simulation %Error 0.001 0.130 0.138 6.154 0.002 0.155 0.157 1.290 0.005 0.185 0.182 -1.622 0.011 0.208 0.203 -2.404 0.022 0.231 0.228 -1.299 0.052 0.260 0.257 -1.154 0.104 0.290 0.290 0.000 0.202 0.337 0.336 -0.297 0.499 0.427 0.427 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Forward Current Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Junction Capacitance CharacteristicCircuit Simulation ResultEvaluation Circuit V2 open 0Vdc open RS U1 V2 = 10 V1 100MEG V1 = 0 SSM5H08TU TD = 0 TR = 1us TF = 10ns 0 PW = 50us open open PER = 10us 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Comparison GraphCircuit Simulation ResultSimulation Result Cj(pF) Vrev(V) Measurement Simulation %Error 0.010 48.000 47.844 -0.325 0.020 47.000 47.377 0.802 0.050 45.500 45.864 0.800 0.100 43.000 43.573 1.333 0.200 39.000 39.690 1.769 0.500 32.000 32.453 1.416 1.000 25.000 26.085 4.340 2.000 20.000 20.018 0.090 5.000 13.000 13.457 3.515 10.000 9.500 9.841 3.589 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Reverse CharacteristicCircuit Simulation ResultEvaluation Circuit RL 0.1m open open open 0Vdc V1 RS SSM5H08TU 100MEG U1 open 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Comparison GraphCircuit Simulation ResultSimulation Result Irev (uA) Vrev(V) Measurement Simulation %Error 6.000 6.650 6.800 2.256 8.000 7.450 7.320 -1.745 10.000 8.300 8.000 -3.614 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
    • Reverse Current Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2005