Device Modeling Report

COMPONENTS: MOSFET (Model Parameters)
PART NUMBER: SSM3K37CT
MANUFACTURER: TOSHIBA
REMARK: Body Di...
MOSFET MODEL
PSpice model
parameter
LEVEL
L
W
KP
RS
RD
VTO
RDS
TOX
CGSO
CGDO
CBD
MJ
PB
FC
RG
IS
N
RB
PHI
GAMMA
DELTA
ETA
T...
Transconductance Characteristics
Circuit Simulation Result
600
Measurement

Simulation

500

gfs (mS)

400

300

200

100
...
Vgs-Id Characteristics
Circuit Simulation result
1.0A

100mA

10mA

1.0mA
0V

1.0V

2.0V

3.0V

I(V3)
V_V1

Evaluation cir...
Comparison Graph
Circuit Simulation Result
1000
Measurement

Drain current ID (mA)

Simulation

100

10

0

1

2

3

Gate-...
Rds(on) Characteristics
Circuit Simulation result

100mA

80mA

60mA

40mA

20mA

0A
0V

20mV
I(V3)

40mV

60mV

80mV

100...
Gate Charge Characteristics
Circuit Simulation result
8.0V

6.0V

4.0V

2.0V

0V
0

0.1n
V(W1:3)

0.2n

0.3n

0.4n

0.5n

...
Gate Charge Characteristics

Reference

All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
8
Capacitance Characteristics

Measurement
Simulation

Simulation Result
VDS (V)
0.1
0.2
0.5
1
2
5
10
20

Cbd (pF)
Measureme...
Switching Time Characteristics
Circuit Simulation result
14V

12V

10V

8V

6V

4V

2V

0V
0.92us
0.96us
V(U1:G)*4
V(U1:D)...
Output Characteristics
Circuit Simulation result
500mA

10

4.5

400mA

2.5

300mA

1.8
200mA

1.5
VGS=1.2V

100mA

0A
0V
...
Forward Current Characteristics
Circuit Simulation Result
1.0A

100mA

10mA

1.0mA

100uA
0V

-0.2V
I(Vsense)

-0.4V

-0.6...
Comparison Graph
Circuit Simulation Result
1000

Drian reverse current IDR (mA)

Measurement

Simulation

100

10

1

0.1
...
Reverse Recovery Characteristics
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
19.88u...
Reverse Recovery Characteristics

Reference
Measurement

Trj = 12.80 (ns)
Trb = 14.40(ns)
Conditions: Ifwd = lrev = 0.2(A)...
ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristics
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
...
Zener Voltage Characteristics

Reference

All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
17
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SPICE MODEL of SSM3K37CT (Standard+BDS Model) in SPICE PARK

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SPICE MODEL of SSM3K37CT (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of SSM3K37CT (Standard+BDS Model) in SPICE PARK

  1. 1. Device Modeling Report COMPONENTS: MOSFET (Model Parameters) PART NUMBER: SSM3K37CT MANUFACTURER: TOSHIBA REMARK: Body Diode (Model Parameters) Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 1
  2. 2. MOSFET MODEL PSpice model parameter LEVEL L W KP RS RD VTO RDS TOX CGSO CGDO CBD MJ PB FC RG IS N RB PHI GAMMA DELTA ETA THETA KAPPA VMAX XJ UO Model description Channel Length Channel Width Transconductance Source Ohmic Resistance Ohmic Drain Resistance Zero-bias Threshold Voltage Drain-Source Shunt Resistance Gate Oxide Thickness Zero-bias Gate-Source Capacitance Zero-bias Gate-Drain Capacitance Zero-bias Bulk-Drain Junction Capacitance Bulk Junction Grading Coefficient Bulk Junction Potential Bulk Junction Forward-bias Capacitance Coefficient Gate Ohmic Resistance Bulk Junction Saturation Current Bulk Junction Emission Coefficient Bulk Series Resistance Surface Inversion Potential Body-effect Parameter Width effect on Threshold Voltage Static Feedback on Threshold Voltage Mobility Modulation Saturation Field Factor Maximum Drift Velocity of Carriers Metallurgical Junction Depth Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 2
  3. 3. Transconductance Characteristics Circuit Simulation Result 600 Measurement Simulation 500 gfs (mS) 400 300 200 100 0 0 100 200 300 400 Drain current ID (mA) Comparison table gfs (ms) Measurement Simulation Id(mA) %Error 20 50 113.000 190.000 117.678 185.972 4.14 -2.12 100 275.000 262.816 -4.43 200 365.000 371.284 1.72 400 500.000 524.276 4.86 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 3
  4. 4. Vgs-Id Characteristics Circuit Simulation result 1.0A 100mA 10mA 1.0mA 0V 1.0V 2.0V 3.0V I(V3) V_V1 Evaluation circuit V3 0Vdc V2 U1 SSM3K37CT 3 V1 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 4
  5. 5. Comparison Graph Circuit Simulation Result 1000 Measurement Drain current ID (mA) Simulation 100 10 0 1 2 3 Gate-source voltage V GS (V) Simulation Result ID(mA) 10 20 50 100 200 400 VGS(V) Measurement 0.765 0.850 0.990 1.200 1.570 2.110 Simulation 0.730 0.830 1.027 1.250 1.565 2.012 %Error -4.56 -2.39 3.76 4.17 -0.30 -4.65 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 5
  6. 6. Rds(on) Characteristics Circuit Simulation result 100mA 80mA 60mA 40mA 20mA 0A 0V 20mV I(V3) 40mV 60mV 80mV 100mV 120mV 140mV 160mV V_VDS Evaluation circuit V3 0Vdc VDS U1 SSM3K37CT 0Vdc V1 4.5 0 Simulation Result ID = 0.1A, VGS = 4.5V R DS (on)  Measurement 1.650 Simulation 1.650 %Error 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 6
  7. 7. Gate Charge Characteristics Circuit Simulation result 8.0V 6.0V 4.0V 2.0V 0V 0 0.1n V(W1:3) 0.2n 0.3n 0.4n 0.5n 0.6n 0.7n 0.8n 0.9n Time*1mA Evaluation circuit D2 Dbreak PER = 1000u PW = 600u TF = 5n TR = 5n TD = 0 I2 = 1m I1 = 0 I2 200m U1 SSM3K37CT W1 + VDD I1 W IOFF = 1mA ION = 0uA 16 0 Simulation Result VDD=16V, ID=0.2A, VGS=4V Qgs nC Qgd nC Qg nC Measurement 0.060 0.088 0.440 Simulation %Error 0.062 0.087 0.323 3.70 -1.51 -26.69 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 7
  8. 8. Gate Charge Characteristics Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 8
  9. 9. Capacitance Characteristics Measurement Simulation Simulation Result VDS (V) 0.1 0.2 0.5 1 2 5 10 20 Cbd (pF) Measurement Simulation 6.000 5.985 5.300 5.333 4.200 4.169 3.200 3.220 2.400 2.375 1.500 1.517 1.050 1.060 0.750 0.735 %Error -0.25 0.62 -0.74 0.63 -1.04 1.13 0.95 -2.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 9
  10. 10. Switching Time Characteristics Circuit Simulation result 14V 12V 10V 8V 6V 4V 2V 0V 0.92us 0.96us V(U1:G)*4 V(U1:D) 1.00us 1.04us 1.08us 1.12us Time Evaluation circuit L2 30nH R1 V1 = 0 V2 = 5 TD = 1u TR = 5n TF = 5n PW = 10u PER = 20u 30nH 98 L1 50 RL U1 SSM3K37CT VDD 10Vdc V2 R2 50 0 Simulation Result ID=0.1A, VDD=10V VGS=2.5/0V ton ns Measurement 18.000 Simulation %Error 18.131 0.73 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 10
  11. 11. Output Characteristics Circuit Simulation result 500mA 10 4.5 400mA 2.5 300mA 1.8 200mA 1.5 VGS=1.2V 100mA 0A 0V 0.2V 0.4V 0.6V 0.8V 1.0V I(V3) V_V2 Evaluation circuit V3 0Vdc V2 U1 SSM3K37CT V1 1 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 11
  12. 12. Forward Current Characteristics Circuit Simulation Result 1.0A 100mA 10mA 1.0mA 100uA 0V -0.2V I(Vsense) -0.4V -0.6V -0.8V -1.0V -1.2V -1.4V V_VDS Evaluation Circuit Vsense 0Vdc VDS U1 SSM3K37CT 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 12
  13. 13. Comparison Graph Circuit Simulation Result 1000 Drian reverse current IDR (mA) Measurement Simulation 100 10 1 0.1 0 0.5 1 1.5 Drain - source voltage-VDS (V) Simulation Result IDR(mA) 0.1 1 10 20 50 100 200 400 -VDS(V) Measurement Simulation 0.570 0.5705 0.648 0.6487 0.730 0.7310 0.760 0.7593 0.805 0.8041 0.845 0.8460 0.895 0.8947 0.950 0.9500 %Error 0.10 0.11 0.13 -0.09 -0.11 0.12 -0.03 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 13
  14. 14. Reverse Recovery Characteristics Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 19.88us I(R1) 19.96us 20.04us 20.12us 20.20us 20.28us Time Evaluation Circuit R1 50 V1 = -9.25v V2 = 10.90v TD = 30ns TR = 10ns TF = 10ns PW = 20us PER = 50us V1 U1 SSM3K37CT 0 Compare Measurement vs. Simulation Measurement trj ns 12.800 Simulation %Error 12.564 -1.84 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 14
  15. 15. Reverse Recovery Characteristics Reference Measurement Trj = 12.80 (ns) Trb = 14.40(ns) Conditions: Ifwd = lrev = 0.2(A), Rl = 50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 15
  16. 16. ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristics Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 2V I(R1) 4V 6V 8V 10V 12V 14V 16V 18V 20V V_V1 Evaluation Circuit R1 0.001m V1 0Vdc U1 SSM3K37CT R2 100MEG 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 16
  17. 17. Zener Voltage Characteristics Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 17

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